I-SiC ceramic tray plate graphite ene-CVD SiC coating yemishini

Ama-ceramics e-silicon carbide awasetshenziswa kuphela esiteji sokubeka ifilimu emincane, njenge-epitaxy noma i-MOCVD, noma ekucubunguleni kwe-wafer, enhliziyweni lapho amathreyi e-wafer carrier e-MOCVD aqala ukuthotshiswa imvelo yokubeka, ngakho-ke amelana kakhulu nokushisa nokubola.Izithwali ze-SiC-coated nazo zinempahla ephezulu yokusabalalisa okushisayo kanye nezakhiwo ezinhle kakhulu zokusabalalisa ezishisayo.

I-Pure Chemical Vapor Deposition Silicon Carbide (CVD SiC) izithwali zewafer zokushisa okuphezulu kwe-Metal Organic Chemical Vapor Deposition (MOCVD) processing.

Izithwali ze-wafer ze-CVD SiC ezihlanzekile ziphakeme kakhulu kunezithwali ze-wafer ezivamile ezisetshenziswa kule nqubo, eziyi-graphite futhi zimbozwe ngongqimba lwe-CVD SiC. lezi zinkampani zenethiwekhi ezisekelwe ku-graphite azikwazi ukumelana namazinga okushisa aphezulu (1100 kuya ku-1200 degrees Celsius) adingekayo ukuze kubekwe i-GaN ukukhanya okuphezulu kwanamuhla kweledi eluhlaza okwesibhakabhaka nokumhlophe. Amazinga okushisa aphezulu abangela ukumboza ukuba kukhiqize izimbotshana ezincane lapho amakhemikhali enqubo eguguleka i-graphite ngaphansi. Izinhlayiya ze-graphite zibe seziphephuka futhi zingcolise i-GaN, okubangela ukuthi isithwali se-wafer esiboshwe sishintshwe.

I-CVD SiC inokuhlanzeka okungama-99.999% noma ngaphezulu futhi inokuqhuba okushisayo okuphezulu kanye nokumelana nokushaqeka okushisayo. Ngakho-ke, ingakwazi ukumelana namazinga okushisa aphezulu kanye nezindawo ezinokhahlo zokukhanya okuphezulu kwe-LED yokukhiqiza. Kuyinto eqinile ye-monolithic efinyelela ukuminyana kwethiyori, ikhiqiza izinhlayiya ezincane, futhi ibonise ukugqwala okuphezulu kakhulu nokumelana nokuguguleka. Impahla ingashintsha ukufiphala kanye ne-conductivity ngaphandle kokwethula ukungcola kwe-metallic. Ama-wafer carriers ngokuvamile angama-intshi angu-17 ububanzi futhi angabamba ama-wafer angama-40 2-4 amayintshi.