English

I-graphite yetreyi ye-ceramic ye-SiC ene-CVD SiC coating yemishini

I-graphite yetreyi ye-SiC ceramic plate ene-CVD SiC coating yemishini Isithombe Esivelele
  • I-graphite yetreyi ye-ceramic ye-SiC ene-CVD SiC coating yemishini
  • I-graphite yetreyi ye-ceramic ye-SiC ene-CVD SiC coating yemishini

Incazelo emfushane:

I-Shanghai Xinkehui New Materials Co., Ltd. ikhiqiza idiski yokugoqa ye-Φ380mm–Φ600mm semiconductor, idiski yokuthwala i-wafer, ithreyi ye-silicon carbide, ithreyi ye-SIC, ithreyi ye-silicon carbide, ithreyi yokugoqa ye-ICP, ithreyi yokugoqa, ubumsulwa be-silicon carbide > 99.9%, impilo yesevisi yethreyi ye-SIC iphindwe kane kunethreyi ye-CVD esekelwe ku-graphite, ukusetshenziswa kwesikhathi eside ngaphandle kokuguquguquka, Ukumelana ne-FH acid, ukugqwala kwe-H2So4 okugxilile.


Izici

Izitsha ze-silicon carbide azisetshenziswa kuphela esigabeni sokufakwa kwefilimu encane, njenge-epitaxy noma i-MOCVD, noma ekucutshungulweni kwe-wafer, lapho amathreyi okuthwala i-wafer e-MOCVD aqala ukufakwa khona endaweni yokufakwa, ngakho-ke amelana kakhulu nokushisa nokugqwala. Izithwali ezimbozwe yi-SiC nazo zinokuqhutshwa okuphezulu kokushisa kanye nezakhiwo ezinhle kakhulu zokusabalalisa ukushisa.

Izithwali ze-wafer ze-Silicon Carbide (CVD SiC) ezihlanzekile ze-Metal Organic Chemical Vapor Deposition (MOCVD) ezisebenza ekucutshungulweni kwe-Metal Organic Chemical Vapor Deposition (MOCVD) eshisa kakhulu.

Izithwali ze-wafer ze-CVD SiC ezimsulwa zingcono kakhulu kunezithwali ze-wafer ezivamile ezisetshenziswa kule nqubo, eziyi-graphite futhi zimbozwe ngesendlalelo se-CVD SiC. lezi zithwali ezisekelwe ku-graphite ezimbozwe azikwazi ukumelana namazinga okushisa aphezulu (1100 kuya ku-1200 degrees Celsius) adingekayo ukuze kubekwe i-GaN ye-led eluhlaza okwesibhakabhaka nomhlophe ekhanya kakhulu namuhla. Amazinga okushisa aphezulu abangela ukuthi i-coating yakhe imigoqo emincane lapho amakhemikhali enqubo eguguleka khona i-graphite ngaphansi. Izinhlayiya ze-graphite zibe seziqhekeka bese zingcolisa i-GaN, okwenza ukuthi i-wafer embozwe ithathelwe indawo.

I-CVD SiC ihlanzekile ngo-99.999% noma ngaphezulu futhi inamandla okushisa aphezulu kanye nokumelana nokushaqeka kokushisa. Ngakho-ke, ingamelana namazinga okushisa aphezulu kanye nezimo ezinzima zokukhiqiza i-LED ekhanyayo kakhulu. Iyinto eqinile ye-monolithic efinyelela ubuningi bethiyori, ikhiqiza izinhlayiya ezincane, futhi ikhombisa ukumelana nokugqwala nokuguguleka okuphezulu kakhulu. Le nto ingashintsha ukungabonakali kanye nokuguquguquka ngaphandle kokufaka ukungcola kwensimbi. Izithwali ze-wafer ngokuvamile zinobubanzi obungu-17 amasentimitha futhi zingabamba ama-wafer afinyelela ku-40 2-4 amasentimitha.

Umdwebo Oningiliziwe

I-WechatIMG7978
I-WechatIMG7979
I-WechatIMG27151
  • Okwedlule:
  • Olandelayo:

    • Imikhiqizo Ehlobene

    Bhala umlayezo wakho lapha bese uwuthumela kithi
    Cindezela u-enter ukuze useshe noma u-ESC ukuze uvale