I-SiC ceramic tray plate graphite ene-CVD SiC coating yemishini

I-SiCceramic tray plate graphite ene-CVD SiC enamathela okokusebenza Isithombe Esifakiwe

Incazelo emfushane:

I-Shanghai Xinkehui New Materials Co., Ltd. ikhiqiza Φ380mm–Φ600mm semiconductor etching disk, wafer bearing disk, silicon carbide tray, SIC tray, silicon carbide tray, ICP etching tray, etching tray, silicon carbide pure > 99.9%, impilo yesevisi ye-SIC iphindwe kane kunethreyi ye-CVD esekwe kugraphite, ukusetshenziswa isikhathi eside ngaphandle kokuguqulwa, Imelana ne-FH acid, ukugqwala okugxilile kwe-H2So4.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izitsha zobumba ze-silicon carbide azisetshenziswa kuphela esiteji sokubeka ifilimu elincanyana, njenge-epitaxy noma i-MOCVD, noma ekucutshungulweni kwe-wafer, enhliziyweni lapho amathreyi athwala ama-wafer e-MOCVD aqala ukuthonywa indawo yokubeka, ngakho-ke amelana kakhulu nawo. ukushisa nokugqwala.Izithwali ze-SiC-coated nazo zine-conductivity ephezulu yokushisa kanye nezindawo ezinhle kakhulu zokusabalalisa ezishisayo.

I-Pure Chemical Vapor Deposition Silicon Carbide (CVD SiC) izithwali zewafer zokushisa okuphezulu kwe-Metal Organic Chemical Vapor Deposition (MOCVD) processing.

Izithwali ze-wafer ze-CVD SiC ezihlanzekile ziphakeme kakhulu kunezithwali ze-wafer ezivamile ezisetshenziswa kule nqubo, eziyi-graphite futhi zimbozwe ngongqimba lwe-CVD SiC. lezi zinkampani zenethiwekhi ezisekelwe ku-graphite azikwazi ukumelana namazinga okushisa aphezulu (1100 kuya ku-1200 degrees Celsius) adingekayo ukuze kubekwe i-GaN ukukhanya okuphezulu kwanamuhla kweledi eluhlaza okwesibhakabhaka nokumhlophe. Amazinga okushisa aphezulu abangela ukumboza ukuba kukhiqize izimbotshana ezincane lapho amakhemikhali enqubo eguguleka i-graphite ngaphansi. Izinhlayiya ze-graphite zibe seziphephuka futhi zingcolise i-GaN, okubangela ukuthi isithwali se-wafer esiboshwe sishintshwe.

I-CVD SiC inokuhlanzeka okungama-99.999% noma ngaphezulu futhi inokuqhuba okushisayo okuphezulu kanye nokumelana nokushaqeka okushisayo. Ngakho-ke, ingakwazi ukumelana namazinga okushisa aphezulu kanye nezindawo ezinokhahlo zokukhanya okuphezulu kwe-LED yokukhiqiza. Kuyinto eqinile ye-monolithic efinyelela ukuminyana kwethiyori, ikhiqiza izinhlayiya ezincane, futhi ibonise ukugqwala okuphezulu kakhulu nokumelana nokuguguleka. Impahla ingashintsha ukufiphala kanye ne-conductivity ngaphandle kokwethula ukungcola kwe-metallic. Izithwali ze-wafer ngokuvamile ziyi-intshi engu-17 ububanzi futhi zingabamba ama-wafer angama-40 2-4 amayintshi.