Ithreyi ye-SiC Ceramic ye-Wafer Carrier enokumelana nokushisa okuphezulu
Ithreyi Ye-Ceramic Ye-Silicon Carbide (Ithreyi Ye-SiC)
Ingxenye ye-ceramic esebenza kahle kakhulu esekelwe ezintweni ze-silicon carbide (SiC), eyenzelwe izinhlelo zokusebenza zezimboni ezithuthukisiwe njengokukhiqiza ama-semiconductor kanye nokukhiqizwa kwe-LED. Imisebenzi yayo eyinhloko ifaka phakathi ukusebenza njengesithwali se-wafer, ipulatifomu yenqubo yokuqopha, noma ukwesekwa kwenqubo yokushisa okuphezulu, ukusebenzisa ukuhanjiswa kokushisa okumangalisayo, ukumelana nokushisa okuphezulu, kanye nokuqina kwamakhemikhali ukuqinisekisa ukufana kwenqubo kanye nokukhiqizwa komkhiqizo.
Izici Eziyinhloko
1. Ukusebenza Kokushisa
- Ukushisa Okuphezulu: 140–300 W/m·K, kudlula kakhulu i-graphite yendabuko (85 W/m·K), okuvumela ukushabalalisa ukushisa okusheshayo nokunciphisa ukucindezeleka kokushisa.
- I-Coefficient Yokukhulisa Okuphansi Kokushisa: 4.0×10⁻⁶/℃ (25–1000℃), i-silicon ehambisana eduze (2.6×10⁻⁶/℃), okunciphisa izingozi zokuguquguquka kokushisa.
2. Izakhiwo Zomshini
- Amandla Aphezulu: Amandla okugobeka ≥320 MPa (20℃), amelana nokucindezelwa kanye nokushaywa.
- Ukuqina Okuphezulu: Ukuqina kwe-Mohs okungu-9.5, okwesibili ngemuva kwedayimane, okunikeza ukumelana okuhle kakhulu kokuguguleka.
3. Ukuzinza Kwamakhemikhali
- Ukumelana Nokugqwala: Imelana nama-asidi aqinile (isb., HF, H₂SO₄), ifaneleka ezindaweni zenqubo yokuqopha.
- Okungeyona i-Magnetic: Ukuzwela kwamandla kazibuthe angaphakathi <1×10⁻⁶ emu/g, okugwema ukuphazamiseka kwezinsimbi zokunemba.
4. Ukubekezelelana Okukhulu Kwemvelo
- Ukuqina Kokushisa Okuphezulu: Izinga lokushisa lokusebenza lesikhathi eside elifika ku-1600–1900℃; ukumelana kwesikhashana okufika ku-2200℃ (indawo engenawo umoya-mpilo).
- Ukumelana Nokushaqeka Kokushisa: Imelana nokushintsha kwezinga lokushisa okungazelelwe (ΔT >1000℃) ngaphandle kokuqhekeka.
Izicelo
| Insimu Yesicelo | Izimo Ezithile | Inani Lobuchwepheshe |
| Ukukhiqizwa kwe-semiconductor | Ukugoqa i-Wafer (ICP), ukufakwa kwefilimu encane (MOCVD), ukupholisha i-CMP | Ukushisa okuphezulu kuqinisekisa amasimu okushisa afanayo; ukunwetshwa kokushisa okuphansi kunciphisa ukugoba kwe-wafer. |
| Ukukhiqizwa kwe-LED | Ukukhula kwe-Epitaxial (isb., i-GaN), ukuhlukaniswa kwe-wafer, ukupakishwa | Ivimbela amaphutha ezinhlobo eziningi, ithuthukisa ukusebenza kahle kokukhanya kwe-LED kanye nesikhathi sokuphila. |
| Imboni ye-Photovoltaic | Izitofu zokushisa ze-silicon wafer, izisekelo zemishini ye-PECVD | Ukumelana nokushaqeka okushisa okuphezulu nokushisa kwandisa isikhathi sokuphila kwemishini. |
| I-Laser kanye ne-Optics | Izisekelo zokupholisa ze-laser ezinamandla aphezulu, izinsiza zesistimu yokukhanya | Ukushisa okuphezulu kwenza ukushisa kusheshe kushabalale, kuzinzise izingxenye zokukhanya. |
| Izinsimbi Zokuhlaziya | Izibambi zesampula ze-TGA/DSC | Umthamo wokushisa ophansi kanye nokusabela okusheshayo kokushisa kuthuthukisa ukunemba kokulinganisa. |
Izinzuzo Zomkhiqizo
- Ukusebenza Okuphelele: Ukushisa, amandla, kanye nokumelana nokugqwala kudlula kakhulu i-alumina kanye ne-silicon nitride ceramics, kuhlangabezana nezidingo zokusebenza eziqine kakhulu.
- Umklamo Olula: Ubuningi obungu-3.1–3.2 g/cm³ (40% wensimbi), kunciphisa umthwalo we-inertial kanye nokuthuthukisa ukunemba kokunyakaza.
- Isikhathi Eside Nokuthembeka: Impilo yesevisi idlula iminyaka emi-5 ku-1600℃, kunciphisa isikhathi sokungasebenzi futhi kunciphisa izindleko zokusebenza ngo-30%.
- Ukwenza ngokwezifiso: Isekela amajiyometri ayinkimbinkimbi (isb., izinkomishi zokumunca ezinezimbobo, amathreyi anezingqimba eziningi) anephutha lokuba yisicaba <15 μm ukuze kusetshenziswe ngokunemba.
Imininingwane Yobuchwepheshe
| Isigaba Sepharamitha | Isikhombi |
| Izakhiwo Zomzimba | |
| Ubuningi | ≥3.10 g/cm³ |
| Amandla Okugobeka (20℃) | 320–410 MPa |
| Ukuqhuba Okushisayo (20℃) | 140–300 W/(m·K) |
| I-Coefficient Yokukhulisa Ukushisa (25–1000℃) | 4.0×10⁻⁶/℃ |
| Izakhiwo Zamakhemikhali | |
| Ukumelana ne-asidi (HF/H₂SO₄) | Akukho ukugqwala ngemva kokucwiliswa amahora angama-24 |
| Ukunemba Kwemishini | |
| Ukuthamba | ≤15 μm (300×300 mm) |
| Ubulukhuni Bomphezulu (Ra) | ≤0.4 μm |
Izinsizakalo ze-XKH
I-XKH inikeza izixazululo eziphelele zezimboni ezihlanganisa ukuthuthukiswa ngokwezifiso, ukwenziwa kwemishini ngokunemba, kanye nokulawulwa kwekhwalithi okuqinile. Ekuthuthukisweni ngokwezifiso, inikeza izixazululo zezinto ezihlanzekile kakhulu (>99.999%) kanye nezimbobo (30–50%), ezihambisana nokumodela kwe-3D kanye nokulingisa ukuze kulungiselelwe amajiyometri ayinkimbinkimbi ezinhlelo zokusebenza ezifana nama-semiconductor kanye ne-aerospace. Ukwenziwa kwemishini ngokunemba kulandela inqubo elula: ukucubungula i-powder → ukucindezela kwe-isostatic/dry → 2200°C sintering → ukugaya kwe-CNC/diamond → ukuhlolwa, ukuqinisekisa ukupholisha kwezinga le-nanometer kanye nokubekezelelana kobukhulu be-±0.01 mm. Ukulawulwa kwekhwalithi kuhlanganisa ukuhlolwa kwenqubo ephelele (ukwakheka kwe-XRD, isakhiwo se-SEM microstructure, ukugoba kwamaphuzu ama-3) kanye nokusekelwa kobuchwepheshe (ukwenziwa ngcono kwenqubo, ukubonisana amahora angama-24 ngosuku, ukulethwa kwesampula amahora angama-48), ukuletha izingxenye ezithembekile nezisebenza kahle zezidingo zezimboni ezithuthukile.
Imibuzo Evame Ukubuzwa (Imibuzo Evame Ukubuzwa)
1. Q: Yiziphi izimboni ezisebenzisa amathreyi e-silicon carbide ceramic?
A: Isetshenziswa kabanzi ekukhiqizweni kwe-semiconductor (ukuphathwa kwe-wafer), amandla elanga (izinqubo ze-PECVD), imishini yezokwelapha (izingxenye ze-MRI), kanye ne-aerospace (izingxenye ezishisa kakhulu) ngenxa yokumelana kwazo nokushisa okukhulu kanye nokuqina kwamakhemikhali.
2. U: I-silicon carbide isebenza kanjani kangcono kunezitini ze-quartz/zengilazi?
A: Ukumelana okuphezulu kokushaqeka kokushisa (kufika ku-1800°C uma kuqhathaniswa ne-quartz engu-1100°C), i-zero magnetic interference, kanye ne-long lifetime (iminyaka engu-5+ uma kuqhathaniswa ne-quartz izinyanga ezingu-6-12).
3. U: Ingabe amathreyi e-silicon carbide angaphatha izindawo ezine-asidi?
A: Yebo. Imelana ne-HF, i-H2SO4, kanye ne-NaOH ngokugqwala okungu-<0.01mm/ngonyaka, okwenza kube kuhle kakhulu ekuhlanzeni ngamakhemikhali nasekuhlanzeni i-wafer.
4. U: Ingabe amathreyi e-silicon carbide ayahambisana nokuzenzakalelayo?
A: Yebo. Yenzelwe ukuqoqwa kwe-vacuum kanye nokuphathwa kwerobhothi, enobubanzi bendawo <0.01mm ukuvimbela ukungcoliswa kwezinhlayiya ezindwangu ezenzakalelayo.
5. U: Kuyini ukuqhathanisa izindleko uma kuqhathaniswa nezinto zendabuko?
A: Izindleko eziphezulu kusengaphambili (i-quartz engu-3-5x) kodwa i-TCO ephansi ngo-30-50% ngenxa yokuphila isikhathi eside, isikhathi sokuphumula esinciphile, kanye nokonga amandla okuvela ekuqhutshweni kokushisa okuphezulu.
