I-SiC Ceramic Fork Arm / End Effector - Ukubamba Okunembayo Okuthuthukisiwe Kokukhiqiza I-Semiconductor

I-SiC Ceramic Fork Arm / End Effector - Ukubamba Okunembayo Okuthuthukisiwe Kwesithombe Esifakiwe Semiconductor Manufacturing

Incazelo emfushane:

I-SiC Ceramic Fork Arm, evame ukubizwa ngokuthi i-Ceramic End Effector, iyingxenye yokusingatha ukunemba okuphezulu okuthuthukisiwe ngokukhethekile ukuthutha okuyisiluphu, ukuqondanisa, nokubeka isikhundla ezimbonini zobuchwepheshe obuphezulu, ikakhulukazi ngaphakathi kwe-semiconductor kanye nokukhiqizwa kwe-photovoltaic. Yakhelwe kusetshenziswa izitsha zobumba ze-silicon carbide Ceramics, le ngxenye ihlanganisa amandla emishini akhethekile, ukunwetshwa okushisayo okuphansi kakhulu, nokumelana okuphakeme nokushaqeka okushisayo nokugqwala.

Thumela i-imeyili kithi

Izici

Umdwebo onemininingwane

Uhlolojikelele Lomkhiqizo

Ngokungafani neziphetho ezivamile ezenziwe nge-aluminium, insimbi engagqwali, noma i-quartz, iziphetho ze-ceramic ze-SiC zinikeza ukusebenza okungenakuqhathaniswa emakamelweni e-vacuum, amagumbi okuhlanza, nasezindaweni zokucubungula ezinokhahlo, okuwenza abe yingxenye ebalulekile yamarobhothi abamba ama-wafer esizukulwane esilandelayo. Ngokukhula kwesidingo sokukhiqizwa okungangcoliswanga kanye nokubekezelelana okuqinile ekwenzeni ama-chipmaking, ukusetshenziswa kwezithako zokugcina ze-ceramic kuba ngokushesha indinganiso yemboni.

Isimiso Sokukhiqiza

Ukwenziwa kweI-SiC Ceramic End Effectersibandakanya uchungechunge lokunemba okuphezulu, izinqubo zokuhlanzeka okuphezulu eziqinisekisa ukusebenza nokuqina. Izinqubo ezimbili eziyinhloko zivame ukusetshenziswa:

I-Reaction-Bonded Silicon Carbide (RB-SiC)

Kule nqubo, i-preform eyenziwe nge-silicon carbide powder kanye ne-binder ingenelwa nge-silicon encibilikisiwe emazingeni okushisa aphezulu (~1500°C), esabela ne-carbon residual yakhe inhlanganisela ye-SiC-Si eminyene, eqinile. Le ndlela ihlinzeka ngokulawula okuhle kakhulu kobukhulu futhi iyabiza ekukhiqizeni ngezinga elikhulu.

I-Pressureless Sintered Silicon Carbide (SSiC)

I-SSiC yenziwa ngokufaka i-ultra-fine, i-high-purity SiC powder emazingeni okushisa aphakeme kakhulu (>2000°C) ngaphandle kokusebenzisa izithasiselo noma isigaba sokubopha. Lokhu kubangela umkhiqizo onokuminyana cishe okungu-100% kanye nezakhiwo eziphakeme kakhulu zomshini nezokushisa ezitholakala phakathi kwezinto ze-SiC. Ilungele izinhlelo zokusebenza zokubamba eziyisicwecwana esibucayi kakhulu.

Ngemuva kokucubungula

Precision CNC Machining: Ifinyelela flatness eliphezulu kanye parallelism.
Surface Finishing: Ukupholishwa kwedayimane kunciphisa ubulukhuni obungaphezulu bube ku-<0.02 µm.
Ukuhlola: I-Optical interferometry, i-CMM, nokuhlola okungabhubhisi kusetshenziswa ukuze kuqinisekiswe ucezu ngalunye.

Lezi zinyathelo ziqinisekisa ukuthi i-I-SiC end effectorinikeza ukunemba kokubekwa kwe-wafer okungaguquki, ukuhleleka okuhle kakhulu, nokukhiqizwa kwezinhlayiyana ezincane.

Izici Eziyinhloko Nezinzuzo

Isici	Incazelo
Ukuqina Okuphakeme Kakhulu	Ubulukhuni be-Vickers > 2500 HV, ukumelana nokuguga nokuqoshwa.
Ukwandiswa Okuphansi Kokushisa	I-CTE ~4.5×10⁻⁶/K, inika amandla ukuzinza kwe-dimensional kubhayisikili elishisayo.
Ukungangeni Kwamakhemikhali	Imelana ne-HF, i-HCl, amagesi e-plasma, nezinye izinto ezonakalisayo.
I-Thermal Shock Resistance enhle kakhulu	Ifanele ukushisisa/ukupholisa okusheshayo kumasistimu we-vacuum kanye nesithando somlilo.
High Rigidity namandla	Isekela izingalo zemfoloko ezinde ze-cantilevered ngaphandle kokuphambuka.
Ukukhipha Okuphansi	Ilungele izindawo ze-vacuum ephezulu kakhulu (UHV).
ISO Class 1 Cleanroom Ready	Ukusebenza okungenazinhlayiya kuqinisekisa ubuqotho be-wafer.

Izinhlelo zokusebenza

I-SiC Ceramic Fork Arm / End Effector isetshenziswa kakhulu ezimbonini ezidinga ukunemba okwedlulele, ukuhlanzeka, nokumelana namakhemikhali. Izimo zohlelo lokusebenza eziyinhloko zifaka:

Ukukhiqiza I-Semiconductor

I-wafer ilayisha/ikhipha ekufakweni (i-CVD, i-PVD), i-etching (i-RIE, i-DRIE), nezinhlelo zokuhlanza.
I-Robotic wafer yokuhamba phakathi kwama-FOUP, amakhasethi, namathuluzi okucubungula.
Ukuphatha izinga lokushisa eliphezulu ngesikhathi sokucubungula okushisayo noma ukuthungatha.

Photovoltaic Cell Production

Ukuthuthwa okuthambile kwamawafa e-silicon abuthakathaka noma ama-solar substrates emigqeni ezenzakalelayo.

Imboni ye-Flat Panel Display (FPD).

Ukuhambisa amaphaneli amakhulu engilazi noma ama-substrates ezindaweni zokukhiqiza ze-OLED/LCD.

I-Compound Semiconductor / MEMS

Isetshenziswa emigqeni yokwakha ye-GaN, SiC, kanye ne-MEMS lapho ukulawulwa kokungcola nokunemba kwezindawo kubalulekile.

Indima yayo yokugcina ibaluleke kakhulu ekuqinisekiseni ukuphatha okungenasici, okuzinzile phakathi nemisebenzi ebucayi.

Amakhono Okwenza ngokwezifiso

Sinikeza ukwenza ngokwezifiso okubanzi ukuze kuhlangatshezwane nezidingo zemishini ehlukahlukene nezinqubo:

I-Fork Design: Izakhiwo ezinama-prong amabili, zeminwe eminingi, noma ezihlukanisayo.
Ukuvumelana kosayizi we-wafer: Kusukela ku-2 "kuya ku-12" ama-wafers.
I-Mounting Interfaces: Ihambisana nezingalo zerobhothi ze-OEM.
Ukujiya Nokubekezelelana Kobuso: Ukucaba kweleveli yeMicron kanye nokuzungezisa konqenqema kuyatholakala.
Izici ze-Anti-Slip: Ukwakheka kwendawo okungakhethwa kuyo noma ukunamathela ukuze kubambe okuyisicwecwana okuvikelekile.

Ngamunyei-ceramic end effectoridizayinwe ngokuhlanganyela namakhasimende ukuze kuqinisekiswe ukufaneleka okunembayo nezinguquko ezincane zamathuluzi.

Imibuzo Evame Ukubuzwa (FAQ)

Q1: Ingcono kanjani i-SiC kune-quartz yohlelo lokusebenza lomphumela wokugcina?
A1:Nakuba i-quartz ijwayele ukusetshenziselwa ubumsulwa bayo, ayinakho ukuqina komshini futhi ijwayele ukuphuka ngaphansi komthwalo noma ukushaqeka kwezinga lokushisa. I-SiC inikeza amandla aphakeme, ukumelana nokugqoka, nokuzinza kwe-thermal, kunciphisa kakhulu ubungozi besikhathi sokuphumula kanye nokulimala kwe-wafer.

I-Q2: Ingabe le ingalo yemfoloko ye-ceramic iyahambisana nazo zonke izibambi zama-robotic wafer?
A2:Yebo, izisetshenziswa zethu zokugcina ze-ceramic ziyahambisana nezinhlelo eziningi zokubamba ze-wafer futhi zingajwayela amamodeli akho athile erobhothi ngemidwebo yobunjiniyela enembile.

Q3: Ingakwazi ukuphatha ama-wafers angu-300 mm ngaphandle kokungqubuzana?
A3:Nakanjani. Ukuqina okuphezulu kwe-SiC kuvumela izingalo ezincanyana, ezinde zemfoloko ukuthi zibambe amawafa angama-300 mm ngokuvikelekile ngaphandle kokugoqa noma ukuchezuka ngesikhathi sokunyakaza.

I-Q4: Iyiphi impilo yesevisi ejwayelekile ye-SiC Ceramic end effector?
A4:Ngokusetshenziswa kahle, i-SiC end effector ingahlala izikhathi ezi-5 kuye kweziyi-10 kunezinhlobo ze-quartz zendabuko noma ze-aluminium, ngenxa yokumelana kwayo okuhle kakhulu nengcindezi eshisayo neyomshini.

I-Q5: Ingabe unikeza okushintshiwe noma izinsizakalo zokukopisha ngokushesha?
A5:Yebo, sisekela ukukhiqizwa kwesampula okusheshayo futhi sinikezela ngezinsizakalo zokumiselela ezisuselwe emidwebeni ye-CAD noma izingxenye ezibunjwe ngokuhlehla ezivela kumishini ekhona.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ukukhiqiza, nokudayiswa kwengilazi ekhethekile yokubona nezinto ezintsha zekristalu. Imikhiqizo yethu isebenza ngogesi obonakalayo, ugesi wabathengi, kanye nezempi. Sinikezela ngezinto ezibonakalayo ze-Sapphire, izembozo zamalensi omakhalekhukhwini, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, namawafa ekristalu e-semiconductor. Ngobungcweti abanamakhono nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungajwayelekile, sihlose ukuba yibhizinisi elihamba phambili le-optoelectronic materials high-tech.