Ingalo Yesikhali Se-Ceramic / I-End Effector ye-SiC – Ukuphathwa Okunembile Okuthuthukisiwe Kokukhiqiza Ama-Semiconductor

I-SiC Ceramic Fork Arm / End Effector – Ukuphathwa Okunembile Okuthuthukisiwe Kokukhiqiza Ama-Semiconductor Isithombe Esivelele

Incazelo emfushane:

I-SiC Ceramic Fork Arm, evame ukubizwa ngokuthi i-Ceramic End Effector, iyingxenye yokuphatha ngokunemba okuphezulu eyenzelwe ngqo ukuthuthwa kwe-wafer, ukuvumelanisa, kanye nokubeka endaweni ezimbonini zobuchwepheshe obuphezulu, ikakhulukazi ngaphakathi kokukhiqizwa kwe-semiconductor kanye ne-photovoltaic. Yakhiwe kusetshenziswa i-silicon carbide ceramics emsulwa kakhulu, le ngxenye ihlanganisa amandla akhethekile omshini, ukwanda kokushisa okuphansi kakhulu, kanye nokumelana okuphezulu nokushaqeka kokushisa kanye nokugqwala.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubuka Konke Komkhiqizo

Ngokungafani nama-effectors endabuko enziwe nge-aluminium, insimbi engagqwali, noma ngisho ne-quartz, ama-effectors e-ceramic end e-SiC anikeza ukusebenza okungenakuqhathaniswa emakamelweni okuhlanza, amakamelo okuhlanza, kanye nasezindaweni zokucubungula ezinzima, okwenza abe yingxenye ebalulekile yamarobhothi okuphatha ama-wafer esizukulwane esilandelayo. Njengoba isidingo sokukhiqiza okungenakungcola sikhula kanye nokubekezelelana okuqinile ekwenzeni ama-chip, ukusetshenziswa kwama-effectors e-ceramic kuba yindinganiso embonini ngokushesha.

Isimiso Sokukhiqiza

Ukuqanjwa kweIzithombisi Zokuphela Ze-Ceramic ze-SiCkuhilela uchungechunge lwezinqubo ezinembile kakhulu nezihlanzekile kakhulu eziqinisekisa kokubili ukusebenza nokuqina. Izinqubo ezimbili eziyinhloko zivame ukusetshenziswa:

I-Silicon Carbide Eboshwe Yi-Reaction (RB-SiC)

Kule nqubo, i-preform eyenziwe nge-silicon carbide powder kanye ne-binder ifakwa nge-silicon encibilikisiwe emazingeni okushisa aphezulu (~1500°C), ephendula ne-residual carbon ukuze yakhe i-SiC-Si composite eqinile, eqinile. Le ndlela inikeza ukulawula okuhle kakhulu kobukhulu futhi ingabizi kakhulu ekukhiqizeni okukhulu.

I-Silicon Carbide Engenangcindezi Engacindezeleki (SSiC)

I-SSiC yenziwa ngokususa i-SiC powder ecolekile kakhulu, ehlanzekile kakhulu emazingeni okushisa aphezulu kakhulu (>2000°C) ngaphandle kokusebenzisa izithasiselo noma isigaba sokubopha. Lokhu kuphumela kumkhiqizo onobuningi obucishe bube yi-100% kanye nezakhiwo eziphezulu kakhulu zemishini nezokushisa ezitholakala phakathi kwezinto ze-SiC. Ilungele ukusetshenziswa kokuphatha i-wafer okubaluleke kakhulu.

Ngemva Kokucubungula

Umshini Wokubumba we-CNC Oqondile: Ifinyelela ukuthamba okuphezulu kanye nokulingana.
Ukuqedwa Komphezulu: Ukupholisha idayimane kunciphisa ukujiya kobuso kube ngaphansi kuka-0.02 µm.
Ukuhlolwa: I-interferometry ye-optical, i-CMM, kanye nokuhlolwa okungabhubhisi kuyasetshenziswa ukuqinisekisa ucezu ngalunye.

Lezi zinyathelo ziqinisekisa ukuthiIsiphetho se-SiCinikeza ukunemba kokubekwa kwe-wafer okuhambisanayo, ukulingana okuhle kakhulu, kanye nokukhiqizwa kwezinhlayiya ezincane.

Izici Eziyinhloko Nezinzuzo

Isici	Incazelo
Ukuqina Okuphezulu Kakhulu	Ubulukhuni be-Vickers > 2500 HV, bumelana nokuguguleka nokuqhekeka.
Ukwanda Okuphansi Kokushisa	I-CTE ~4.5×10⁻⁶/K, okuvumela ukuzinza kobukhulu ekujikelezeni kokushisa.
Ukungasebenzi Kwamakhemikhali	Ayimelani ne-HF, i-HCl, amagesi e-plasma, nezinye izinto ezibhubhisayo.
Ukumelana Okuhle Kakhulu Nokushisa Okushisayo	Ifanele ukufudumeza/ukupholisa ngokushesha ezinhlelweni ze-vacuum kanye nezesithando somlilo.
Ukuqina Okuphezulu Namandla	Isekela izingalo zefoloko ezinde ezinezimbobo ngaphandle kokuphambuka.
Ukweqisa Okuphansi	Ilungele izindawo ezine-vacuum ephezulu kakhulu (UHV).
I-ISO Class 1 Cleanroom Ready	Ukusebenza okungenazinhlayiyana kuqinisekisa ubuqotho be-wafer.

Izicelo

I-SiC Ceramic Fork Arm / End Effector isetshenziswa kabanzi ezimbonini ezidinga ukunemba okukhulu, ukuhlanzeka, kanye nokumelana namakhemikhali. Izimo ezibalulekile zokusetshenziswa zifaka:

Ukukhiqizwa Kwe-semiconductor

Ukulayisha/ukukhulula i-wafer ekufakweni (i-CVD, i-PVD), ukuqopha (i-RIE, i-DRIE), kanye nezinhlelo zokuhlanza.
Ukuthuthwa kwe-wafer yerobhothi phakathi kwama-FOUP, amakhasethi, namathuluzi okucubungula.
Ukuphathwa kokushisa okuphezulu ngesikhathi sokucubungula ukushisa noma ukufakelwa.

Ukukhiqizwa Kwamaseli E-Photovoltaic

Ukuthuthwa okuthambile kwama-wafer e-silicon abuthakathaka noma ama-substrate elanga emigqeni ezenzakalelayo.

Imboni Yesibonisi Sephaneli Eyisicaba (i-FPD)

Ukuhambisa amaphaneli amakhulu engilazi noma ama-substrate ezindaweni zokukhiqiza ze-OLED/LCD.

I-Compound Semiconductor / MEMS

Kusetshenziswa emigqeni yokukhiqiza ye-GaN, SiC, kanye ne-MEMS lapho ukulawulwa kokungcola kanye nokunemba kokubekwa kubalulekile khona.

Indima yayo yokuba nomthelela wokugcina ibaluleke kakhulu ekuqinisekiseni ukuthi ayiphazamisi futhi ayiguquguquki ngesikhathi sokusebenza okubucayi.

Amakhono Okwenza Ngokwezifiso

Sinikeza ukwenza ngokwezifiso okubanzi ukuze kuhlangatshezwane nezidingo ezahlukene zemishini kanye nezinqubo:

Umklamo wefoloko: Izakhiwo ezinamaphini amabili, ezineminwe eminingi, noma ezisezingeni elihlukene.
Ukuhambisana Kosayizi We-Wafer: Kusukela kuma-wafer angu-2” kuya kwangu-12”.
Ukufakwa Kwezindawo Zokuxhumana: Iyahambisana nezingalo zerobhothi ze-OEM.
Ukujiya Nokubekezelela Okungaphezulu: Ukuthamba kwezinga le-micron kanye nokuzungeza umphetho kuyatholakala.
Izici Zokulwa Nokushelela: Ukuthungwa noma ukumbozwa kobuso okungakhethwa ukuze kubambeke kahle i-wafer.

Ngayinyeisiphetho se-ceramicyakhelwe ngokubambisana namakhasimende ukuqinisekisa ukulingana okunembile kanye nezinguquko ezincane kakhulu zamathuluzi.

Imibuzo Evame Ukubuzwa (Imibuzo Evame Ukubuzwa)

Umbuzo 1: I-SiC ingcono kanjani kune-quartz ekusetshenzisweni kwe-end effector?
A1:Nakuba i-quartz ivame ukusetshenziswa ngenxa yobumsulwa bayo, ayinabo ukuqina komshini futhi ithambekele ekuphukeni ngaphansi komthwalo noma ukushaqeka kwezinga lokushisa. I-SiC inikeza amandla aphezulu, ukumelana nokuguguleka, kanye nokuqina kokushisa, okunciphisa kakhulu ingozi yokungasebenzi kanye nomonakalo we-wafer.

Umbuzo 2: Ingabe le ngalo yefoloko ye-ceramic iyahambisana nazo zonke izibambi ze-wafer zerobhothi?
A2:Yebo, ama-end effector ethu e-ceramic ayahambisana nezinhlelo eziningi zokuphatha i-wafer ezinkulu futhi angashintshwa ukuze ahambisane namamodeli akho athile e-robotic ngemidwebo yobunjiniyela enembile.

U-3: Ingakwazi yini ukusingatha ama-wafer angu-300 mm ngaphandle kokugoba?
A3:Impela. Ukuqina okuphezulu kwe-SiC kuvumela ngisho nezingalo ezincane, ezinde zefoloko ukuthi zibambe ama-wafer angu-300 mm ngokuphephile ngaphandle kokugoba noma ukuphambuka ngesikhathi sokunyakaza.

Q4: Iyini impilo ejwayelekile yesevisi ye-SiC ceramic end effector?
A4:Uma isetshenziswa kahle, i-SiC end effector ingahlala isikhathi eside ngokuphindwe ka-5 kuya ku-10 kunezinhlobo ze-quartz noma ze-aluminium zendabuko, ngenxa yokumelana kwayo okuhle kakhulu nokucindezeleka kokushisa nokwemishini.

Umbuzo 5: Ingabe ninikeza izinsizakalo zokufaka esikhundleni noma zokufaka amaphrothokholi ngokushesha?
A5:Yebo, sisekela ukukhiqizwa kwamasampula okusheshayo futhi sinikeza izinsizakalo zokufaka esikhundleni ngokusekelwe kumidwebo ye-CAD noma izingxenye eziklanywe kabusha ezivela emishinini ekhona.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.