Ingalo yokuphatha ye-SiC ceramic end effector yokuthwala i-wafer

Incazelo emfushane:

Ama-Wafer e-LiNbO₃ amelela indinganiso yegolide kuma-photonics ahlanganisiwe kanye nama-acoustic anembile, aletha ukusebenza okungenakuqhathaniswa ezinhlelweni zesimanje ze-optoelectronic. Njengomkhiqizi ohamba phambili, sithuthukise ubuciko bokukhiqiza lawa ma-substrate aklanywe ngobuchwepheshe ngokusebenzisa amasu athuthukisiwe okulinganisa ukuthutha ngomusi, sifinyelele ukuphelela kwekristalu okuhamba phambili embonini ngobuningi obunesici ngaphansi kwama-50/cm².

Amakhono okukhiqiza e-XKH ahlanganisa ububanzi obusukela ku-75mm kuya ku-150mm, ngokulawula okuqondile kokuqondiswa (X/Y/Z-cut ±0.3°) kanye nezinketho ezikhethekile zokusebenzisa i-doping kufaka phakathi izinto ezingavamile zomhlaba. Inhlanganisela eyingqayizivele yezakhiwo kuma-LiNbO₃ Wafers – kufaka phakathi i-coefficient yawo emangalisayo ye-r₃₃ (32±2 pm/V) kanye nokucaca okubanzi kusuka eduze kwe-UV kuya phakathi kwe-IR – kuwenza abe yinto ebalulekile kumasekethe e-photonic esizukulwane esilandelayo kanye namadivayisi e-acoustic anemvamisa ephezulu.

Sithumelele i-imeyili

Izici

Isifinyezo se-SiC ceramic end effector

I-SiC (Silicon Carbide) ceramic end-effector iyisici esibalulekile ezinhlelweni zokuphatha i-wafer ezinembayo kakhulu ezisetshenziswa ekukhiqizweni kwe-semiconductor kanye nasezindaweni ezithuthukisiwe ze-microfabrication. Yakhelwe ukuhlangabezana nezidingo ezidingekayo zezindawo ezihlanzekile kakhulu, ezinokushisa okuphezulu, nezizinzile kakhulu, le end-effector ekhethekile iqinisekisa ukuthuthwa kwama-wafer okuthembekile nokungangcolisi ngesikhathi sezinyathelo ezibalulekile zokukhiqiza njenge-lithography, etching, kanye ne-deposition.

Ukusebenzisa izakhiwo zezinto eziphezulu ze-silicon carbide—njengokuqhuba okuphezulu kokushisa, ubulukhuni obukhulu, ukungangeni kahle kwamakhemikhali, kanye nokukhula okuncane kokushisa—i-SiC ceramic end-effector inikeza ukuqina okungenakuqhathaniswa komshini kanye nokuqina kobukhulu ngisho nangaphansi kokujikeleza okusheshayo kokushisa noma emakamelweni enqubo yokubola. Ukukhiqizwa kwayo kwezinhlayiya eziphansi kanye nezici zokumelana ne-plasma kwenza ifaneleke kakhulu ezindaweni zokuhlanza kanye nezicelo zokucubungula i-vacuum, lapho ukugcina ubuqotho bomphezulu we-wafer kanye nokunciphisa ukungcola kwezinhlayiya kubaluleke kakhulu.

Isicelo se-SiC ceramic end effector

1. Ukuphathwa kwe-Wafer ye-Semiconductor

Ama-end effector e-ceramic e-SiC asetshenziswa kabanzi embonini ye-semiconductor ukuphatha ama-wafer e-silicon ngesikhathi sokukhiqizwa okuzenzakalelayo. Lawa ma-end effector avame ukufakwa ezingalweni zerobhothi noma ezinhlelweni zokudlulisa i-vacuum futhi aklanyelwe ukwamukela ama-wafer osayizi abahlukahlukene njengo-200mm no-300mm. Abalulekile ezinqubweni ezifaka phakathi i-Chemical Vapor Deposition (CVD), i-Physical Vapor Deposition (PVD), i-etching, kanye ne-diffusion—lapho amazinga okushisa aphezulu, izimo ze-vacuum, kanye namagesi agqwalisayo kuvamile. Ukumelana okumangalisayo kokushisa kwe-SiC kanye nokuqina kwamakhemikhali kwenza kube yinto efanelekile yokubekezelela izindawo ezinzima kangaka ngaphandle kokuwohloka.

2. Ukuhambisana kwegumbi lokuhlanza kanye ne-vacuum

Ezindaweni zokuhlanza kanye nezindawo zokuhlanza umoya, lapho ukungcola kwezinhlayiya kufanele kuncishiswe khona, izitsha ze-SiC ceramics zinikeza izinzuzo ezibalulekile. Ubuso obukhulu, obubushelelezi bezinto zokwakha buyamelana nokukhiqizwa kwezinhlayiya, okusiza ukugcina ubuqotho be-wafer ngesikhathi sokuthuthwa. Lokhu kwenza ama-effector e-SiC afaneleke kakhulu ezinqubweni ezibalulekile njenge-Extreme Ultraviolet Lithography (EUV) kanye ne-Atomic Layer Deposition (ALD), lapho ukuhlanzeka kubaluleke khona. Ngaphezu kwalokho, ukukhishwa okuphansi kwegesi kanye nokumelana okuphezulu kwe-plasma kuqinisekisa ukusebenza okuthembekile emakamelweni okuhlanza umoya, kwandise isikhathi sokuphila kwamathuluzi futhi kunciphisa imvamisa yokulungisa.

3. Izinhlelo Zokubeka Ezinembe Kakhulu

Ukunemba nokuzinza kubalulekile ezinhlelweni zokuphatha ama-wafer ezithuthukisiwe, ikakhulukazi ku-metrology, ukuhlolwa, kanye nemishini yokuqondanisa. Ama-ceramic e-SiC ane-coefficient ephansi kakhulu yokwanda kokushisa kanye nokuqina okuphezulu, okuvumela i-end effector ukuthi igcine ukunemba kwayo kwesakhiwo ngisho nangaphansi kokujikeleza kokushisa noma umthwalo wemishini. Lokhu kuqinisekisa ukuthi ama-wafers ahlala eqondile ngesikhathi sokuthuthwa, okunciphisa ingozi yokuklwebheka okuncane, ukungalungi kahle, noma amaphutha okulinganisa—izici ezibaluleke kakhulu kuma-node enqubo ye-sub-5nm.

Izakhiwo ze-SiC ceramic end effector

1. Amandla Nokuqina Okuphezulu Kwemishini

I-SiC ceramics inamandla angavamile okusebenza, ngamandla ayo avame ukwedlula ama-MPa angu-400 kanye namanani obulukhuni be-Vickers angaphezu kuka-2000 HV. Lokhu kuyenza imelane kakhulu nokucindezeleka kokusebenza, ukuthinteka, kanye nokuguguleka, ngisho nangemva kokusetshenziswa isikhathi eside. Ukuqina okuphezulu kwe-SiC kunciphisa nokuphambuka ngesikhathi sokudluliselwa kwe-wafer ngesivinini esikhulu, okuqinisekisa ukuthi indawo inembile futhi iyaphindaphindeka.

2. Ukuqina Okuhle Kakhulu Kokushisa

Esinye sezimpawu ezibaluleke kakhulu ze-SiC ceramics yikhono lazo lokubekezelela amazinga okushisa aphezulu kakhulu—ngokuvamile afinyelela ku-1600°C ezindaweni ezingasebenzi kahle—ngaphandle kokulahlekelwa ubuqotho bomshini. I-coefficient yazo ephansi yokwanda kokushisa (~4.0 x 10⁻⁶ /K) iqinisekisa ukuzinza kobukhulu ngaphansi kokujikeleza kokushisa, okwenza zibe zilungele ukusetshenziswa njenge-CVD, i-PVD, kanye ne-high-temperature annealing.

Imibuzo Nezimpendulo ze-SiC ceramic end effector

Q: Yikuphi okusetshenziselwa i-wafer end effector?

A:Ama-effector end e-Wafer avame ukwenziwa ngezinto ezinikeza amandla aphezulu, ukuzinza kokushisa, kanye nokukhiqizwa kwezinhlayiya eziphansi. Phakathi kwalezi, i-Silicon Carbide (SiC) ceramic ingenye yezinto ezithuthukisiwe kakhulu nezithandwa kakhulu. Ama-SiC ceramics aqinile kakhulu, azinzile ekushiseni, awasebenzi ngamakhemikhali, futhi amelana nokuguguleka, okwenza abe ngcono kakhulu ekuphatheni ama-silicon wafers athambile ezindaweni ezihlanzekile nezingenawo umoya. Uma kuqhathaniswa ne-quartz noma izinsimbi ezimboziwe, i-SiC inikeza ukuzinza okuphezulu kobukhulu ngaphansi kwamazinga okushisa aphezulu futhi ayikhiphi izinhlayiya, okusiza ukuvimbela ukungcola.