I-Sic Ceramic Chuck Tray Curant Cups PRICHINISITING IMIBILIDIWE

Sic Ceramic Chuck Tray Curandi Cups PRICEPITING IFAWIDEDICEDIC

Incazelo emfushane:

I-Silicon Carbide CourAmic Tray Sucker iyisinqumo esihle sokukhiqiza i-semiconductor ngenxa yobulukhuni bayo obuphezulu, ukuqhutshwa okuphezulu okushisayo kanye nokuqina okuhle kwamakhemikhali. Ifulethi layo eliphakeme kanye nokuqedwa komhlaba okuphezulu kuqinisekisa ukuxhumana okugcwele phakathi kwe-wafer ne-sucker, kunciphisa ukungcoliswa kanye nomonakalo; Ukumelana nokushisa okuphezulu nokugqwala kwenza ilungele izindawo ezinokhahlo; Ngasikhathi sinye, ukwakheka okungasindi kanye nezimpawu zokuphila ezinde zinciphisa izindleko zokukhiqiza futhi ziyizakhi ezibalulekile ezisemqoka ekusikeni okwenziwe, okupolishi, i-lithography kanye nezinye izinqubo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Izici ezibonakalayo:

I-1.High Hardness: Ubulukhuni be-mohts we-silicon Carbide ngu-9.2-9.5, Okwesibili kuphela edayimane, ngokumelana nokuqina okuqinile.
2
I-3. I-coefficion ephansi ephansi
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I-5

Izici:

1. Imboni ye-semiconductor, ama-wafers athambile kakhulu adinga ukufakwa kwi-vacuum suction Cup, i-vacuum suction isetshenziselwa ukulungisa ama-wafing, kanye nenqubo yokuqalisa, ukuncipha, ukugoqa, ukuhlanza nokusika kwenziwa kuma-wafers.
I-2.Silicon Carbide Sucker inokuphamba okuhle okushisayo, kunganciphisa ngempumelelo isikhathi se-waxing kanye ne-waxing, kuthuthukisa ukusebenza kahle kokukhiqiza.
I-3.Silicon Carbide Vacuum Sucker nayo ine-acid kanye ne-alkali yokuphikiswa kwe-ALKALI.
I-4.com nomane efakwe ngeplanethi ye-Corundum Carrier, ifinyeze ukulayisha nokulayisha ukufudumeza nesikhathi sokupholisa, thuthukisa ukusebenza kahle komsebenzi; Ngasikhathi sinye, kunganciphisa ukugqokwa phakathi kwamapuleti aphezulu nangaphansi, gcina ukunemba okuhle kwendiza, futhi kunwebe impilo yensiza cishe ngama-40%.
5.Izinto ezibonakalayo zincane, isisindo esikhanyayo. Kulula ukuthi opharetha ukuthwala ama-pallets, behlisa ubungozi bomonakalo wokushayisana obangelwa ubunzima bezokuthutha cishe ngama-20%.
6.Size: Ububanzi obuphezulu ngo-640mm; Flatness: 3um noma ngaphansi

Inkambu Yesicelo:

1. Ukukhiqiza i-semiconductor
● Ukucutshungulwa kwe-wafer:
Ukulungiswa okufiphele ku-photolithography, etching, ukufakwa kwamafilimu okuncanyana nezinye izinqubo, ukuqinisekisa ukunemba okuphezulu nokusebenza kwenqubo. Ukumelana kwayo okuphezulu nokugqwala kulungele izindawo zokukhiqiza ze-semiconductor.
● Ukukhula kwe-EpiTaxial:
Ekukhuleni kwe-sic noma kwe-epitaxial, njengesiphathi sokushisa nokulungisa ama-wafers, ukuqinisekisa ukufana kokushisa kanye nekhwalithi yekristalu emazingeni okushisa aphezulu, ngcono ukusebenza kwensiza.
2. I-PhotoElectric Equipment
● Ukukhiqiza i-LED:
Isetshenziselwa ukulungisa iSapphire noma i-Sic substerstrate, futhi njengesithwali sokushisa kwinqubo ye-mocvd, ukuqinisekisa ukufana kokukhula kwe-epitaxial, ngcono ukusebenza kahle okukhanyayo kanye nekhwalithi.
● I-Laser Diode:
Njengokulungiswa okunengqondo okuphezulu, ukulungiswa nokushisa i-substrate ukuqinisekisa ukuqina kokushisa kwenqubo, thuthukisa amandla okukhipha nokwethenjwa kwe-laser diode.
3. Ukucaciswa kwemishini
● Ukucutshungulwa kwezakhi ze-Optical:
Isetshenziselwa ukulungisa izingxenye zokunemba ezifana namalensi abonakalayo nezihlungi zokuqinisekisa ukunemba okuphezulu nokungcoliswa okuphansi ngesikhathi sokulungiswa, futhi kufanelekile ngemishini ephezulu kakhulu.
● Ukucutshungulwa kwe-ceramic:
Njengokulungiswa koqina okuphezulu, kufanelekile ukulungiswa kwemishini kwezinto zokwakha ubuciko ukuqinisekisa ukunemba kwemishini nokungaguquguquki ngaphansi kwendawo ephezulu yokushisa kanye nemvelo evuthayo.
4. Ukuhlolwa kwesayensi
● Ukuhlolwa okushisa okuphezulu:
Njengedivaysi yokulungiswa kwesampula ezindaweni eziphakeme zokushisa, isekela izivivinyo zokushisa ezedlulele ngaphezulu kwe-1600 ° C ukuqinisekisa ukufana kokushisa kanye nokuqina kwesampula.
● Ukuhlolwa kwe-vacuum:
Njengomphathi wesampula wesampula kanye ne-carting carrier endaweni ye-vacuum, ukuqinisekisa ukunemba nokuphindaphindwa kokuhlolwa, kufanelekile ukunamathela kwe-vacuum kanye nokwelashwa kokushisa.

Ukucaciswa kobuchwepheshe:

(Impahla Yezinto Ezibonakalayo)		(Iyunithi)	(SSIC)
(Okuqukethwe yi-SIC)		(Wt)%	> 99
(Isilinganiso sobukhulu obusanhlamvu)		microsanabimbimbilh	4-10
(Inceku)		kg / dm3	> 3.14
(I-porolity ebonakalayo)		VO1%	<0.5
(Ubulukhuni bama-Vicklers)	Hv 0.5	Uhlobo	28
* (Amandla aguqukayo) * (amaphuzu amathathu)	20ºC	I-MPA	I-450
(Amandla acindezelayo)	20ºC	I-MPA	3900
(Elastic modulus)	20ºC	Uhlobo	420
(Ukuqhekeka kobunzima)		MPA / m '%	I-3.5
(Ukuvuselelwa okushisayo)	20 ° ºC	*W / (m k)**	I-160
(Ukumelana)	20 ° ºC	Ohm.cm	106-108
(Ukunwebeka kokunwetshwa kwe-thermal)	A (Rt ... 80ºC)**	*K-1 10-6**	4.3
(Amazinga okushisa aphezulu)		OºC	I-1700

Ngeminyaka yokuqongelela ubuchwepheshe kanye nesipiliyoni semboni, i-XKH iyakwazi ukuvumelanisa amapharamitha asemqoka afana nosayizi, indlela yokushisa kanye nokuklanywa kwe-adsuck ye-chuck ngokwezidingo ezithile zekhasimende, ukuqinisekisa ukuthi umkhiqizo uvumelaniswa kahle nenqubo yekhasimende. I-Sic Silicon Carbide Courbic Cueckic Crucks isibe yizingxenye ezisemqoka ekucutshungweni okukhona, ukukhula kwe-EpiTaxial nezinye izinqubo ezibalulekile ngenxa yokuvuselelwa okungcono kakhulu okushisayo, ukuqina okushisa okuphezulu nokuqina kwamazinga okushisa kanye nokuqina kwamakhemikhali. Ikakhulu ekwenziweni kwezinto zokwenziwa zesithupha sezizukulwane zesithathu njenge-SIC ne-GAN, isidingo se-Silicon Carbide Ceramic Crucks siyaqhubeka nokukhula. Ngokuzayo, ukuthuthukiswa okusheshayo kwezimoto ezi-5G, zikagesi, ubuhlakani bokufakelwa nobunye ubuchwepheshe, amathemba wesicelo se-silicon Carbide Ceramic Crucks embonini ye-semiconductor azobanzi.