Ithreyi ye-chuck ye-SiC ceramic
Izici zezinto ezibonakalayo:
1. Ubulukhuni obuphezulu: ubulukhuni be-Mohs be-silicon carbide bungu-9.2-9.5, bulandela idayimane kuphela, bunokumelana okunamandla kokuguguleka.
2. Ukushisa okuphezulu: Ukushisa okuphezulu kwe-silicon carbide kuphakeme njengo-120-200 W/m·K, okungasusa ukushisa ngokushesha futhi kufaneleke endaweni enokushisa okuphezulu.
3. I-coefficient yokwandisa ukushisa ephansi: i-coefficient yokwandisa ukushisa ye-silicon carbide iphansi (4.0-4.5×10⁻⁶/K), isengagcina ukuzinza kobukhulu ekushiseni okuphezulu.
4. Ukuqina kwamakhemikhali: i-silicon carbide acid kanye nokumelana nokugqwala kwe-alkali, okufanele ukusetshenziswa endaweni egqwala ngamakhemikhali.
5. Amandla aphezulu okusebenza: i-silicon carbide inamandla aphezulu okugoba kanye namandla okucindezela, futhi ingamelana nokucindezeleka okukhulu kokusebenza.
Izici:
1. Embonini ye-semiconductor, ama-wafer amancane kakhulu adinga ukufakwa endebeni yokumunca i-vacuum, i-vacuum suction isetshenziselwa ukulungisa ama-wafer, futhi inqubo yokuwaxa, ukunciphisa, ukuwaxa, ukuhlanza kanye nokusika yenziwa kuma-wafer.
2. I-Silicon carbide sucker inokushisa okuhle, ingafinyeza ngempumelelo isikhathi sokuwaxa kanye nokuwaxa, ithuthukise ukusebenza kahle kokukhiqiza.
3. I-Silicon carbide vacuum sucker nayo inokumelana okuhle kokugqwala kwe-asidi ne-alkali.
4. Uma kuqhathaniswa nepuleti lendabuko le-corundum carrier, kunciphisa isikhathi sokulayisha nokulayisha sokushisa nokupholisa, kuthuthukisa ukusebenza kahle komsebenzi; Ngesikhathi esifanayo, kunganciphisa ukuguguleka phakathi kwamapuleti aphezulu naphansi, kugcine ukunemba okuhle kwendiza, futhi kwandise impilo yesevisi cishe ngo-40%.
5. Isilinganiso sezinto ezibonakalayo sincane, silula. Kulula kubasebenzi ukuthwala ama-pallet, okunciphisa ingozi yomonakalo wengozi obangelwa ubunzima bokuthutha cishe ngo-20%.
6. Usayizi: ububanzi obukhulu obungu-640mm; Ukuthamba: 3um noma ngaphansi
Inkambu yesicelo:
1. Ukukhiqizwa kwe-semiconductor
●Ukucubungula i-wafer:
Ukulungiswa kwe-wafer ku-photolithography, etching, thin film deposition kanye nezinye izinqubo, ukuqinisekisa ukunemba okuphezulu kanye nokuvumelana kwenqubo. Ukumelana kwayo nokushisa okuphezulu kanye nokugqwala kufanelekile ezindaweni zokukhiqiza ze-semiconductor ezinzima.
●Ukukhula kwe-Epitaxial:
Ekukhuleni kwe-SiC noma i-GaN epitaxial, njengesithwali sokushisa nokulungisa ama-wafer, ukuqinisekisa ukufana kwezinga lokushisa kanye nekhwalithi yekristalu emazingeni okushisa aphezulu, okuthuthukisa ukusebenza kwedivayisi.
2. Imishini kagesi
●Ukukhiqiza i-LED:
Isetshenziselwa ukulungisa i-sapphire noma i-SiC substrate, kanye nesithwali sokushisa enqubweni ye-MOCVD, ukuqinisekisa ukufana kokukhula kwe-epitaxial, ukuthuthukisa ukusebenza kahle kanye nekhwalithi yokukhanya kwe-LED.
●I-diode yelaser:
Njengesithako esinokunemba okuphezulu, i-substrate yokulungisa nokushisa ukuqinisekisa ukuqina kokushisa kwenqubo, kuthuthukisa amandla okukhipha kanye nokuthembeka kwe-laser diode.
3. Ukulungisa imishini ngokunemba
●Ukucubungula izingxenye ze-optical:
Isetshenziselwa ukulungisa izingxenye ezinembile ezifana namalensi optical kanye nezihlungi ukuqinisekisa ukunemba okuphezulu kanye nokungcola okuphansi ngesikhathi sokucubungula, futhi ifaneleka ekusetshenzisweni kwemishini enamandla kakhulu.
●Ukucubungula nge-ceramic:
Njengesithako esiqinile kakhulu, ifaneleka ekusetshenzisweni ngokunemba kwezinto zobumba ukuqinisekisa ukunemba kokusetshenziswa kanye nokungaguquguquki ngaphansi kwezinga lokushisa eliphezulu kanye nendawo egqwalisayo.
4. Ukuhlolwa kwesayensi
●Ukuhlolwa kwezinga lokushisa eliphezulu:
Njengedivayisi yokulungisa amasampula ezindaweni zokushisa okuphezulu, isekela izivivinyo zokushisa okukhulu ngaphezu kuka-1600°C ukuqinisekisa ukufana kwezinga lokushisa kanye nokuqina kwesampula.
●Ukuhlolwa kwe-vacuum:
Njengesithwali sokulungisa nokushisa isampula endaweni yokuhlanza, ukuqinisekisa ukunemba nokuphindeka kokuhlolwa, okufanelekela ukumbozwa kwe-vacuum nokwelashwa kokushisa.
Imininingwane yobuchwepheshe:
| (Impahla yezinto ezibonakalayo) | (Iyunithi) | (i-ssic) | |
| (Okuqukethwe kwe-SiC) |
| (Ubude)% | >99 |
| (Usayizi ojwayelekile wokusanhlamvu) |
| i-micron | 4-10 |
| (Ubuningi) |
| kg/dm3 | >3.14 |
| (I-porosity ebonakalayo) |
| I-Vo1% | <0.5 |
| (Ubulukhuni bukaVickers) | I-HV 0.5 | I-GPa | 28 |
| *( Amandla okuguquguquka) | 20ºC | I-MPa | 450 |
| (Amandla okucindezela) | 20ºC | I-MPa | 3900 |
| (I-Elastic Modulus) | 20ºC | I-GPa | 420 |
| (Ukuqina kokuphuka) |
| I-MPa/m'% | 3.5 |
| (Ukuqhuba kwe-thermal) | 20°ºC | W/(m*K) | 160 |
| (Ukumelana) | 20°ºC | Ohm.cm | 106-108 |
|
| a(RT**...80ºC) | K-1*10-6 | 4.3 |
|
|
| oºC | 1700 |
Njengoba ineminyaka eminingi yokuqongelela ubuchwepheshe kanye nokuhlangenwe nakho embonini, i-XKH iyakwazi ukwenza ngokwezifiso amapharamitha abalulekile njengosayizi, indlela yokushisa kanye nomklamo wokufaka i-vacuum we-chuck ngokwezidingo ezithile zekhasimende, ukuqinisekisa ukuthi umkhiqizo uhambisana kahle nenqubo yekhasimende. Ama-SiC silicon carbide ceramic chucks aseyizingxenye ezibalulekile ekucubungulweni kwe-wafer, ukukhula kwe-epitaxial kanye nezinye izinqubo ezibalulekile ngenxa yokuqhuba kwawo okuhle kakhulu kokushisa, ukuzinza kokushisa okuphezulu kanye nokuqina kwamakhemikhali. Ikakhulukazi ekukhiqizweni kwezinto ze-semiconductor zesizukulwane sesithathu njenge-SiC ne-GaN, isidingo sama-silicon carbide ceramic chucks siyaqhubeka nokukhula. Esikhathini esizayo, ngentuthuko esheshayo ye-5G, izimoto zikagesi, ubuhlakani bokwenziwa kanye nobunye ubuchwepheshe, amathuba okusetshenziswa kwama-silicon carbide ceramic chucks embonini yama-semiconductor azoba banzi.
Umdwebo Oningiliziwe
