I-Semi-Insulating SiC ku-Si Composite Substrates

Incazelo emfushane:

I-Semi-insulated SiC ku-Si composite substrate iyimpahla ye-semiconductor ehlanganisa ukufaka ungqimba olufakwe i-semi-insulated ye-silicon carbide (SiC) ku-silicon substrate.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinto	Ukucaciswa	Izinto	Ukucaciswa
Ububanzi	150±0.2mm	Ukuqondisa	<111>/<100>/<110> njalo njalo
I-Polytype	4H	Uhlobo	P/N
Ukungazweli	≥1E8ohm·cm	Ukucaba	I-Flat/Notch
Dlulisa Ukuqina kwesendlalelo	≥0.1μm	I-Edge Chip, Scratch, Crack (ukuhlola okubonakalayo)	Lutho
Ize	≤5ea/wafer (2mm>D>0.5mm)	I-TTV	≤5μm
Ubulukhuni bangaphambili	I-Ra≤0.2nm (5μm*5μm)	Ubukhulu	500/625/675±25μm

Le nhlanganisela inikeza izinzuzo eziningi ekukhiqizeni izinto zikagesi:

Ukuhambisana: Ukusetshenziswa kwe-silicon substrate kuyenza ihambisane nezindlela ezijwayelekile zokucubungula i-silicon futhi ivumela ukuhlanganiswa nezinqubo zokukhiqiza ezikhona ze-semiconductor.

Ukusebenza okuphezulu kwezinga lokushisa: I-SiC inokuhamba okuhle kakhulu kwe-thermal futhi ingasebenza emazingeni okushisa aphezulu, iyenze ifaneleke amandla aphezulu kanye nezinhlelo zokusebenza ze-elekthronikhi eziyimvamisa ephezulu.

I-High Breakdown Voltage: Izinto ze-SiC zine-voltage ephezulu yokuphuka futhi zingamelana nezinkundla zikagesi eziphakeme ngaphandle kokuphuka kukagesi.

Ukulahleka Kwamandla Okuncishisiwe: Ama-substrates e-SiC avumela ukuguqulwa kwamandla okusebenza kahle kakhudlwana nokuncipha kwamandla kumishini kagesi uma kuqhathaniswa nezinto ezivamile ezisekelwe ku-silicon.

Umkhawulokudonsa obanzi: I-SiC inomkhawulokudonsa obanzi, ovumela ukuthuthukiswa kwezinto zikagesi ezingasebenza emazingeni okushisa aphezulu kanye nokuminyana kwamandla aphezulu.

Ngakho-ke i-Semi-insulating SiC ku-Si composite substrates ihlanganisa ukuhambisana kwe-silicon nezici eziphakeme zikagesi nezishisayo ze-SiC, iyenze ifanelekele izinhlelo zokusebenza ze-elekthronikhi ezisebenza kahle.

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