I-SiC Engangenisi Ukushisa Kuma-Si Composite Substrates
| Izinto | Imininingwane | Izinto | Imininingwane |
| Ububanzi | 150±0.2mm | Ukuqondiswa | <111>/<100>/<110> njalo njalo |
| Uhlobo lwe-Polytype | 4H | Uhlobo | I-P/N |
| Ukumelana | ≥1E8ohm·cm | Ukuthamba | Isicaba/Isikhewu |
| Ubukhulu bengqimba yokudlulisa | ≥0.1μm | I-Edge Chip, Ukuklwebheka, Ukuqhekeka (ukuhlolwa okubonakalayo) | Akukho |
| Ize | ≤5ea/i-wafer (2mm>D>0.5mm) | I-TTV | ≤5μm |
| Ubulukhuni bangaphambili | I-Ra≤0.2nm (5μm*5μm) | Ubukhulu | 500/625/675±25μm |
Le nhlanganisela inikeza izinzuzo eziningana ekukhiqizeni izinto ze-elekthronikhi:
Ukuhambisana: Ukusetshenziswa kwe-substrate ye-silicon kuyenza ihambisane namasu okucubungula ajwayelekile asekelwe ku-silicon futhi kuvumela ukuhlanganiswa nezinqubo zokukhiqiza ze-semiconductor ezikhona.
Ukusebenza kwezinga lokushisa eliphezulu: I-SiC inomoya omuhle kakhulu wokushisa futhi ingasebenza emazingeni okushisa aphezulu, okwenza ifanelekele ukusetshenziswa kwamandla aphezulu kanye nezinhlelo zokusebenza ze-elekthronikhi ezivame kakhulu.
I-Voltage Ephakeme Yokuphuka: Izinto ze-SiC zine-voltage ephezulu yokuphuka futhi zingamelana nezinkundla zikagesi eziphezulu ngaphandle kokuphuka kukagesi.
Ukulahlekelwa Amandla Okuncishisiwe: Ama-substrate e-SiC avumela ukuguqulwa kwamandla okuphumelelayo kakhulu kanye nokulahlekelwa kwamandla okuphansi kumadivayisi kagesi uma kuqhathaniswa nezinto zendabuko ezisekelwe ku-silicon.
Ububanzi bomkhawulokudonsa: I-SiC inomkhawulokudonsa omkhulu, okuvumela ukuthuthukiswa kwamadivayisi kagesi angasebenza emazingeni okushisa aphezulu kanye nobuningi bamandla aphezulu.
Ngakho-ke i-SiC evikela kancane kuma-substrate ahlanganisiwe e-Si ihlanganisa ukuhambisana kwe-silicon nezakhiwo zikagesi nezokushisa eziphakeme ze-SiC, okwenza ifaneleke ezinhlelweni zokusebenza ze-elekthronikhi ezisebenza kahle kakhulu.
Ukupakisha Nokulethwa
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Umdwebo Oningiliziwe
