ishubhu le-sapphire CZmethod KY indlela Ukumelana Nokushisa Okuphezulu Al2O3 99.999% i-sapphire eyodwa yekristalu
Imininingwane
| Impahla | Incazelo |
| Ukwakheka Kwezinto | I-Al₂O₃ Single Crystal Sapphire emsulwa engu-99.999% |
| Isakhiwo sekristalu | I-Hexagonal (Rhombohedral), eqinisekisa ukucaca okuphezulu kokukhanya kanye namandla amahle kakhulu omshini |
| Ubulukhuni | 9 esikalini se-Mohs, enikeza ukuklwebheka okuhle kakhulu nokumelana nokuguguleka, ilandela idayimane kuphela |
| Ukuqhuba Okushisayo | 46 W/m·K (ku-100°C), okuvumela ukushabalalisa ukushisa okuphumelelayo |
| Indawo Yokuncibilika | 2,040°C (3,704°F), okunikeza ukumelana okumangalisayo emazingeni okushisa aphezulu kakhulu |
| Izinga Lokushisa Eliphezulu Lokusebenza | Ingasebenza ngokuqhubekayo emazingeni okushisa afinyelela ku-1,600°C (2,912°F) |
| Isilinganiso Sokwanda Kwe-Thermal | 5.3 × 10⁻⁶ /°C (0-1000°C), okuqinisekisa ukuzinza kobukhulu ngaphansi kokushintshashintsha okukhulu kokushisa |
| Inkomba Yokubukeza | 1.76 (ku-0.589 μm), enikeza izakhiwo ezinhle kakhulu zokukhanya ezifanele ukusetshenziswa kuzinhlelo zokusebenza ze-UV kuya ku-IR |
| Ukucaca | Ukucaca okungaphezu kuka-85% kuwo wonke ama-wavelengths kusukela ku-0.3 kuya ku-5.5 μm |
| Ukumelana namakhemikhali | Imelana kakhulu nama-acid, ama-alkali, kanye nezinto eziningi ezibolayo zamakhemikhali |
| Ubuningi | 3.98 g/cm³, okuqinisekisa ubuqotho besakhiwo obuqinile |
| I-Modulus kaYoung | 345 GPa, enikeza ukuqina okuphezulu kwemishini nokuqina |
| Ukufakwa Kokushisa Kukagesi | Izakhiwo ezinhle kakhulu ze-dielectric, okwenza kube kuhle kakhulu ekusetshenzisweni kokuvikela kuma-elekthronikhi |
| Amasu Okukhiqiza | Kukhiqizwe kusetshenziswa izindlela ezithuthukisiwe zeCzochralski (CZ) kanye neKyropoulos (KY) zokunemba nokuthembeka |
| Izicelo | Ivame ukusetshenziswa ekucubungulweni kwe-semiconductor, izithando zokushisa okuphezulu, i-optics, i-aerospace, kanye nezimboni zamakhemikhali |
Ipayipi lempahla ye-XINKEHUI yesafire tube
Isicelo Somkhiqizo
Amashubhu e-sapphire asetshenziswa kabanzi ezimbonini ezisebenza kahle kakhulu njengokucubungula ama-semiconductor, i-aerospace, i-optics, kanye nobunjiniyela bamakhemikhali. Amandla awo okumelana namazinga okushisa aphezulu (kufika ku-1,600°C), kanye nokumelana kwamakhemikhali okumangalisayo kuma-acid nama-alkali, kuwenza afaneleke kakhulu ezithandweni ezishisa kakhulu nasezindaweni ezigqwalisayo. Ngaphezu kwalokho, ukucaca kwawo okuphezulu kuwo wonke amaza e-UV kuya ku-IR kuwenza abe yigugu ezinhlelweni ze-optical. Amandla aphezulu omshini weshubhu le-sapphire kanye nokuqhuba ukushisa nakho kubalulekile ezinhlelweni lapho kudingeka khona ukuqina nokushabalaliswa kokushisa, njengakuma-electronics kanye nezinhlelo zamandla.
Isifinyezo Esiphelele
Ishubhu le-sapphire, elenziwe nge-sapphire yekristalu eyodwa engu-99.999% emsulwa, liyinto ekhethekile eyenzelwe ukusetshenziswa ezimbonini ezisebenza kahle njenge-semiconductors, i-aerospace, i-optics, kanye nobunjiniyela bamakhemikhali. Ngobunzima obungu-9 esikalini se-Mohs, linikeza ukumelana okuhle kokuklwebheka kanye namandla omshini. Lingasebenza ezindaweni ezishisa kakhulu ezinamazinga okushisa afinyelela ku-1,600°C, okwenza lifaneleke kakhulu kuma-furnace ashisa kakhulu kanye nezilungiselelo zokugqwala ngenxa yokumelana kwalo okuhle kakhulu kwamakhemikhali.
Ngaphezu kwalokho, ukuhanjiswa kokushisa kweshubhu le-sapphire elingu-46 W/m·K kuqinisekisa ukushabalaliswa kokushisa okuphumelelayo, kuyilapho ukucaca kwayo okuphezulu kuwo wonke amaza e-UV kuya ku-IR kusekela izinhlelo zokusebenza ezibalulekile ze-optical. Uma kuhlanganiswa nezakhiwo zayo ezinhle kakhulu ze-dielectric, lo mkhiqizo uyisisombululo esiqinile sama-electronics, izinhlelo zamandla, kanye ne-optics. Ngokuqina okuphezulu, ukuzinza, kanye nokusebenza, amashubhu e-sapphire aletha ukuthembeka kwezinye zezindawo zezimboni nezobuchwepheshe ezidinga kakhulu.
Umdwebo Oningiliziwe





