Imikhiqizo
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I-Silicon Carbide (SiC) Substrate Engangenisi Umswakama Ophakeme Wezingilazi Ze-Ar
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I-SiC Ceramic Tray End Effector Wafer Ukuphathwa Kwezingxenye Ezenziwe Ngokwezifiso
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Umshini Wokusika Owenziwe Ngezintambo Eziningi Zedayimane Osheshayo Oqondile Kakhulu Oqonde Phansi
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Ama-Wafer e-Epitaxial angu-4H-SiC ama-MOSFET e-Ultra-High Voltage (100–500 μm, amasentimitha angu-6)
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Ubucwebe Obuluhlaza Obukhuliswe Elabhorethri Ye-Moissanite
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Indlela ye-Sapphire tube KY ecacile yonke ingenziwa ngokwezifiso
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I-Sapphire Tube EFG Ky Method Optical Grade Al2O3 Crystal
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I-Sapphire Square Blank Substrate – I-Optical, i-Semiconductor, kanye ne-Test Wafer
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Ibhokisi Lekhasethi Le-Wafer Eliyi-Inch Eli-1 Le-Sapphire SiC Si
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Iwindi Lengxenye Ebonakalayo Ebunjwe Ngokwesipinashi Ngokwezifiso
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Ama-Ruby Bearings Precision Jewel Bearings
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Imishini Yokupholisha Ehlangothini Elilodwa Enemba Kakhulu