Ikhaya
Inkampani
Mayelana ne-Xinkehui
Imikhiqizo
I-substrate
Isafire
I-SiC
I-silicon
LiTaO3_LiNbO3
Imikhiqizo ye-Optical
I-Epi-ungqimba
Imikhiqizo ye-Ceramic
I-synthetic gem crystal
I-Wafer Carrier
Imishini ye-semiconductor
Metal crystal impahla eyodwa
Izindaba
Oxhumana naye
English
Ikhaya
Imikhiqizo
Imikhiqizo
I-Semi-Insulating SiC ku-Si Composite Substrates
I-Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
Imishini yangokwezifiso ye-quartz crystal yesikebhe yokushisa okuphezulu nokumelana nokugqoka
Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha
I-N-Type SiC ku-Si Composite Substrates Dia6inch
I-SiC substrate i-Dia200mm 4H-N ne-HPSI Silicon carbide
3inch SiC substrate Production Dia76.2mm 4H-N
I-SiC substrate P kanye ne-D grade Dia50mm 4H-N 2inch
I-TGV Glass substrates 12inch wafer Glass punching
Itshe eliyigugu lesafire elipinki I-Corundum lendandatho noma umgexo
4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
8inch Silicon wafer P/N-uhlobo (100) 1-100Ω i-dummy reclaim substrate
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