Imikhiqizo
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I-Silicon carbide Ceramic tray sucker I-Silicon carbide ceramic tube inikeza izinga lokushisa eliphezulu lokucutshungulwa ngokwezifiso kwe-sintering
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Amandla aphezulu we-silicon carbide ceramic tube SIC izinhlobo ezahlukene zokumelana nomlilo ngokwezifiso
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Ithreyi ye-Ceramic chuck ye-Ceramic inkomishi yokumunca ukunemba ukwenziwa ngendlela oyifisayo
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I-Sapphire fibre diameter 75-500μm LHPG indlela ingasetshenziselwa inzwa yesafire fiber izinga lokushisa eliphezulu
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I-Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ ingasetshenziselwa izinto zewindi le-laser
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I-Sapphire Substrate enephethini PSS 2inch 4inch 6inch ICP dry etching ingasetshenziselwa ama-LED chips
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Umshini wokubhoboza wetafula elincane we-laser 1000W-6000W ubuncane bembobo obungu-0.1MM ungasetshenziselwa izinto zokwakha zengilazi zensimbi
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Imikhiqizo yeshubhu yokuvikela ye-Sapphire thermocouple isetshenziswa yizimboni I-Single crystal Al2O3
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Umshini wokumba we-laser wokunemba okuphezulu we-sapphire ceramic material gem ephethe umbhobho wokumba
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I-Sapphire single crystal Al2O3 isithando somlilo sokukhulisa i-KY indlela ye-Kyropoulos ukukhiqizwa kwekristalu yesafire yekhwalithi ephezulu
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2 intshi 4 inch 6 inch Patterned Sapphire Substrate (PSS) lapho kutshalwe khona impahla ye-GaN engasetshenziselwa ukukhanyisa kwe-LED
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I-Monocrystalline silicon ukukhula kwesithando somlilo i-monocrystalline silicon ingot yesistimu yokukhula izinga lokushisa lifika ku-2100 ℃