Imikhiqizo
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I-substrate ye-silicon carbide engu-2 intshi engu-6H-N ububanzi obuphindwe kabili obucwebezelayo obungu-50.8mm ibanga lokucwaninga lebanga lokukhiqiza
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I-substrate yethusi i-cubic yethusi i-Single crystal Cu wafer 100 110 111 Ukuqondiswa kwe-SSP DSP ubumsulwa 99.99%
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I-substrate yethusi yekristalu elilodwa le-Cu wafer 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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I-Nickel wafer Ni Substrate 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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Isakhiwo se-Ni Substrate/wafer cubic crystal eyodwa a=3.25A density 8.91
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I-Magnesium single crystal Substrate Mg ubumsulwa be-wafer 99.99% 5x5x0.5/1mm 10x10x0.5/1mm20x20x0.5/1mm
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I-Magnesium Single crystal Mg wafer DSP SSP Orientation
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I-aluminium metal single crystal substrate epholishiwe futhi icutshungulwe ngobukhulu bokukhiqiza isekethe ehlanganisiwe
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Isisekelo se-aluminiyamu Ukuqondiswa kwesisekelo se-aluminiyamu sekristalu elilodwa 111 100 111 5×5×0.5mm
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I-Quartz Glass Wafer JGS1 JGS2 BF33 Wafer 8inch 12inch 725 ± 25 um Noma Yenziwe Ngokwezifiso
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ishubhu le-sapphire CZmethod KY indlela Ukumelana Nokushisa Okuphezulu Al2O3 99.999% i-sapphire eyodwa yekristalu
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uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD