Imikhiqizo
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Isithando somlilo se-SiC Ingot Sezindlela Ezinkulu Zobubanzi be-SiC Crystal TSSG/LPE
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I-Infrared Picosecond Dual-Platform Laser Cutting imishini yokusika i-Optical Glass/Quartz/Sapphire Processing
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Itshe Eliyigugu Elinemibala Yokwenziwa Itshe eliyigugu leSapphire lobucwebe Ukusika Usayizi Wamahhala
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I-SiC Ceramic end effector enikeza ingalo yokuthwala i-wafer
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4inch 6inch 8inch SiC Crystal Growth Furnace Yenqubo ye-CVD
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6 Intshi 4H SEMI Uhlobo lwe-SiC eyinhlanganisela ye-substrate Ukuqina 500μm TTV≤5μm MOS ibanga
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Izingxenye Ze-Windows Sapphire Ezenziwe Ngokwezifiso EzineSapphire Optical Ezine-Precision polishing
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Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4inch 6inch se-ICP
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Iwindi Lesafire Elimise Ngokwezifiso Ukuqina Okuphakeme Kwezikrini Ze-smartphone
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I-12 intshi ye-SiC Substrate N Uhlobo Lwezicelo Ze-RF Ezinosayizi Omkhulu Osebenza Kakhulu
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I-N Yangokwezifiso Uhlobo lwe-SiC Seed Substrate Dia153/155mm Yezogesi Zamandla
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I-Infrared Nanosecond Laser Drilling imishini yokuqina kwe-Glass Drilling≤20mm