Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha

Incazelo emfushane:

2 inch P-Type Silicon Carbide (SiC) Wafer kungaba 4H noma 6H polytype. Inezici ezifanayo njenge-wafer ye-Silicon Carbide (SiC) yohlobo lwe-N, efana nokumelana nezinga lokushisa eliphezulu, ukuqhutshwa kwe-thermal okuphezulu, ukuguquguquka kukagesi okuphezulu, njll. I-substrate ye-SiC yohlobo lwe-P ngokuvamile isetshenziselwa ukukhiqiza amadivayisi kagesi, ikakhulukazi ukukhiqizwa kwe-Insulated I-Gate Bipolar Transistors (IGBT). Ukwakhiwa kwe-IGBT kuvame ukubandakanya ukuhlangana kwe-PN, lapho i-P-type SiC ingaba nenzuzo yokulawula ukuziphatha kwamadivayisi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-substrates e-silicon carbide ohlobo lwe-P avame ukusetshenziselwa ukwenza amadivayisi kagesi, njenge-Insulate-Gate Bipolar transistors (IGBTs).

I-IGBT= MOSFET+BJT, okuwumshini wokucisha. I-MOSFET=IGFET(ithubhu le-metal oxide semiconductor field effect, noma i-transistor yomphumela wesango elivalekile). I-BJT(i-Bipolar Junction Transistor, eyaziwa nangokuthi i-transistor), i-bipolar isho ukuthi kunezinhlobo ezimbili zama-electron nezimbobo zokuthwala ezihilelekile kunqubo yokuqhuba emsebenzini, ngokuvamile kune-PN junction ehilelekile ekuqhubeni.

Iwafa ye-silicon carbide (SiC) engu-2-intshi ye-p iku-4H noma i-6H polytype. Inezici ezifanayo nezicwecwana ze-silicon carbide (SiC) zohlobo lwe-n-type, ezifana nokumelana nezinga lokushisa eliphezulu, ukuguquguquka okuphezulu kwe-thermal, kanye ne-high conductivity kagesi. Ama-substrates e-SiC yohlobo lwe-p avame ukusetshenziswa ekwenzeni izinto zikagesi, ikakhulukazi ekwenzeni ama-insulated-gate bipolar transistors (IGBTs). ukwakheka kwama-IGBT ngokuvamile kuhilela ukuhlangana kwe-PN, lapho i-p-type SiC inenzuzo yokulawula ukuziphatha kwedivayisi.