I-substrate ye-P-type SiC wafer ye-SiC umkhiqizo omusha we-Dia2inch

Ama-substrate e-silicon carbide ohlobo lwe-P avame ukusetshenziswa ukwenza amadivayisi kagesi, njenge-Insulate-Gate Bipolar transistors (IGBTs).

I-IGBT= MOSFET+BJT, okuyiswishi esivuliwe. I-MOSFET=IGFET(ishubhu lomphumela wensimu ye-semiconductor yensimbi, noma i-transistor yomphumela wensimu yohlobo lwesango elivikelwe). I-BJT(i-Bipolar Junction Transistor, eyaziwa nangokuthi i-transistor), i-bipolar isho ukuthi kunezinhlobo ezimbili zabathwali be-electron kanye nemigodi ababandakanyeka enqubweni yokuqhuba umsebenzi, ngokuvamile kukhona i-PN junction ebandakanyeka ekuqhubeni.

I-wafer ye-silicon carbide (SiC) engamasentimitha angu-2 itholakala ku-polytype engu-4H noma engu-6H. Inezakhiwo ezifanayo nama-wafer e-silicon carbide (SiC) yohlobo lwe-n, njengokumelana nokushisa okuphezulu, ukuhanjiswa kokushisa okuphezulu, kanye nokuhanjiswa kukagesi okuphezulu. Ama-substrate e-p-type SiC avame ukusetshenziswa ekwakhiweni kwamadivayisi kagesi, ikakhulukazi ekwakhiweni kwama-transistors e-bipolar afakwe i-insulated-gate (IGBTs). Ukwakheka kwama-IGBT ngokuvamile kuhilela ama-PN junctions, lapho i-p-type SiC inenzuzo ekulawuleni ukuziphatha kwedivayisi.