p-uhlobo 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Ziro MPD

Incazelo emfushane:

I-P-type 4H/6H-P 3C-N yohlobo lwe-SiC substrate, 4-intshi enomumo ongu-〈111〉± 0.5° kanye nebanga le-Zero MPD (I-Micro Pipe Defect), iwumsebenzi we-semiconductor osebenza kahle kakhulu oklanyelwe idivayisi ye-elekthronikhi ethuthukisiwe. ukukhiqiza. Le substrate yaziwa ngokusebenza kwayo okuhle kakhulu kwe-thermal, i-voltage ephezulu yokuphuka, nokumelana okuqinile namazinga okushisa aphezulu kanye nokugqwala, le substrate ilungele ukusetshenziswa kwamandla kagesi kanye nezinhlelo ze-RF. Ibanga le-Zero MPD liqinisekisa amaphutha amancane, liqinisekisa ukwethembeka nokuzinza kumadivayisi asebenza kahle kakhulu. Ukuma kwayo okunembayo 〈111〉± 0.5° kuvumela ukuqondanisa okunembile ngesikhathi sokwakha, okuyenza ifanele izinqubo ezinkulu zokukhiqiza. Le substrate isetshenziswa kabanzi kumadivayisi e-elekthronikhi asezingeni eliphezulu, amandla kagesi aphezulu, nangamaza aphezulu, njengeziguquli zamandla, iziguquli, kanye nezingxenye ze-RF.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lepharamitha evamile

4 intshi ububanzi SiliconI-Carbide (SiC) Substrate Ukucaciswa

Ibanga			Zero MPD Production Ibanga (Z Ibanga)	Ukukhiqizwa Okujwayelekile Ibanga (P Ibanga)	Dummy Grade (D Ibanga)
Ububanzi			99.5 mm~100.0 mm
Ubukhulu			350 μm ± 25 μm
I-Wafer Orientation			I-off aksisi: 2.0°-4.0° ukuya [112(-)0] ± 0.5° ngo-4H/6H-P, On eksisi:〈111〉± 0.5° ku-3C-N
I-Micropipe Density			0 cm-2
Ukungazweli	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Isisekelo se-Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ubude Befulethi obuyisisekelo			32.5 mm ± 2.0 mm
Ubude Befulethi besibili			18.0 mm ± 2.0 mm
I-Flat Orientation yesibili			I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat±5.0°
Ukukhishwa komkhawulo			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			I-Polish Ra≤1 nm
			I-CMP Ra≤0.2 nm		I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light			Lutho		Ubude obuqongelelwayo ≤ 10 mm, ubude obubodwa≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu			Lutho		Indawo eqoqiwe≤3%
I-Visual Carbon Inclusions			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light			Lutho		Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla			Akukho okuvunyelwe ≥0.2mm ububanzi nokujula		5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity			Lutho
Ukupakisha			I-Multi-wafer Cassette noma Isiqukathi Esiyisicwecwana Esisodwa

Amanothi:

※ Imikhawulo yokukhubazeka isebenza kuyo yonke indawo yewafer ngaphandle kwendawo engabaliwe enqenqemeni. # Imihuzuko kufanele ibhekwe ku-Si face kuphela.

Uhlobo lwe-P-4H/6H-P 3C-N uhlobo lwe-4-inch SiC substrate ene-〈111〉± 0.5° orientation kanye nebanga le-Zero MPD isetshenziswa kakhulu ezinhlelweni zikagesi ezisebenza kahle. I-thermal conductivity yayo enhle kakhulu kanye ne-high breakdown voltage iyenza ifaneleke kugesi wamandla, njengamaswishi ane-voltage ephezulu, ama-inverter, neziguquli zamandla, ezisebenza ezimeni ezimbi kakhulu. Ukwengeza, ukumelana kwe-substrate emazingeni okushisa aphezulu kanye nokugqwala kuqinisekisa ukusebenza okuzinzile ezindaweni ezinokhahlo. Ukuma kwe-〈111〉± 0.5° okunembile kuthuthukisa ukunemba kokukhiqiza, kukwenze ifaneleke amadivayisi e-RF nezinhlelo zokusebenza zamafrikhwensi aphezulu, njengamasistimu e-radar nemishini yokuxhumana engenantambo.

Izinzuzo ze-N-type SiC composite substrates zihlanganisa:

1. I-High Thermal Conductivity: Ukuchithwa kokushisa okuphumelelayo, okuyenza ifaneleke ezindaweni ezishisa kakhulu kanye nezicelo zamandla aphezulu.
2. I-High Breakdown Voltage: Iqinisekisa ukusebenza okuthembekile ezinhlelweni zamandla kagesi aphezulu njengeziguquli zamandla nama-inverter.
3. I-Zero MPD (I-Micro Pipe Defect) Ibanga: Iqinisekisa ukukhubazeka okuncane, ihlinzeka ngokuzinza nokuthembeka okuphezulu kumadivayisi kagesi abalulekile.
4. I-Corrosion Resistance: Ihlala isikhathi eside ezindaweni ezinokhahlo, iqinisekisa ukusebenza kwesikhathi eside ezimeni ezinzima.
5. Enembile 〈111〉± 0.5° Umumo: Ivumela ukuqondanisa okunembile phakathi nokukhiqiza, ukuthuthukisa ukusebenza kwedivayisi kuma-high-frequency kanye nezinhlelo zokusebenza ze-RF.

Sekukonke, uhlobo lwe-P-uhlobo lwe-4H/6H-P 3C-N uhlobo lwe-4-inch SiC substrate ene-〈111〉± 0.5° orientation kanye nebanga le-Zero MPD iyinto esebenza kahle kakhulu elungele izinhlelo zokusebenza ze-elekthronikhi ezithuthukile. I-thermal conductivity yayo enhle kakhulu kanye ne-high breakdown voltage iyenza ifaneleke kugesi wamandla njengamaswishi ane-voltage ephezulu, ama-inverter, neziguquli. Ibanga le-Zero MPD liqinisekisa amaphutha amancane, linikeza ukwethembeka nokuzinza kumadivayisi abalulekile. Ukwengeza, ukumelana kwe-substrate ukugqwala namazinga okushisa aphezulu kuqinisekisa ukuqina ezindaweni ezinokhahlo. Ukuma kwe-〈111〉± 0.5° okunembile kuvumela ukuqondanisa okunembile ngesikhathi sokukhiqiza, kuyenze ifaneleke kakhulu amadivayisi e-RF nezinhlelo zokusebenza zamafrikhwensi aphezulu.