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uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD Isithombe Esifakiwe
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Incazelo emfushane:

I-substrate ye-P-type 4H/6H-P 3C-N SiC, engamasentimitha angu-4 enokuqondisa okungu-〈111〉± 0.5° kanye nebanga elingu-Zero MPD (Micro Pipe Defect), iyinto ye-semiconductor esebenza kahle kakhulu eyenzelwe ukukhiqizwa kwamadivayisi kagesi athuthukile. Yaziwa ngokuqhutshwa kwayo okuhle kakhulu kokushisa, i-voltage ephezulu yokuqhekeka, kanye nokumelana okunamandla namazinga okushisa aphezulu kanye nokugqwala, le substrate ilungele izinhlelo zokusebenza ze-elekthronikhi zamandla kanye ne-RF. Ibanga elingu-Zero MPD liqinisekisa amaphutha amancane, okuqinisekisa ukuthembeka nokuzinza kumadivayisi asebenza kahle kakhulu. Ukuqondiswa kwayo okunembile okungu-〈111〉± 0.5° kuvumela ukuhambisana okunembile ngesikhathi sokwenziwa, okwenza ifaneleke ezinqubweni zokukhiqiza ezinkulu. Le substrate isetshenziswa kabanzi kumadivayisi kagesi asebenza kahle kakhulu, asebenza kahle kakhulu, kanye nama-frequency aphezulu, njengeziguquli zamandla, ama-inverter, kanye nezingxenye ze-RF.


Izici

I-4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lamapharamitha avamile

4 ububanzi be-intshi i-SiliconI-substrate ye-Carbide (SiC) Imininingwane

 

Ibanga Ukukhiqizwa kwe-MPD okungekho

Ibanga (Z) Ibanga)

 Ukukhiqizwa Okujwayelekile

Ibanga (P) Ibanga)

  

Ibanga Eliyimbumbulu (D Ibanga)
Ububanzi 99.5 mm~100.0 mm
Ubukhulu 350 μm ± 25 μm
Ukuqondiswa kwe-Wafer I-axis evaliwe: 2.0°-4.0° ngase-[11]2(-)0] ± 0.5° yamahora angu-4/6-P, Oi-n axis:〈111〉± 0.5° ye-3C-N
Ubuningi be-Micropipe 0 cm-2
Ukumelana uhlobo lwe-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
uhlobo lwe-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Ukuqondiswa Okuyisisekelo Okuyisicaba 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Ubude Obuphansi Obuyinhloko 32.5 mm ± 2.0 mm
Ubude Besibili Obuyisicaba 18.0 mm ± 2.0 mm
Ukuqondiswa Kwesibili Okuyisicaba I-silicon ibheke phezulu: 90° CW. kusuka ku-Prime flat±5.0°
Ukukhishwa Komphetho 3 mm 6 mm
I-LTV/TTV/Umnsalo/I-Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni I-Polish Ra≤1 nm
I-CMP Ra≤0.2 nm Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Akukho Ubude obuhlanganisiwe ≤ 10 mm, ubude obubodwa ≤2 mm
Amapuleti e-Hex Ngokukhanya Okuphezulu Indawo eqongelelayo ≤0.05% Indawo ehlanganisiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Akukho Indawo eqongelelekayo ≤3%
Ukufakwa kwekhabhoni ebonakalayo Indawo eqongelelayo ≤0.05% Indawo eqongelelayo ≤3%
Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer
Ama-Edge Chips Aphezulu Ngokukhanya Okunamandla Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm 5 kuvunyelwe, ≤1 mm ngayinye
Ukungcoliswa Komphezulu We-Silicon Ngu-High Intensity Akukho
Ukupakisha Ikhasethi ye-Multi-wafer noma i-Single Wafer

Amanothi:

※Imikhawulo yamaphutha isebenza ebusweni bonke be-wafer ngaphandle kwendawo engafakwanga unqenqema. # Imihuzuko kufanele ihlolwe ebusweni be-Si kuphela.

I-substrate ye-P-type 4H/6H-P 3C-N engu-4-intshi SiC ene-orientation ye-〈111〉± 0.5° kanye ne-Zero MPD grade isetshenziswa kabanzi ezinhlelweni zokusebenza ze-elekthronikhi ezisebenza kahle kakhulu. Ukushisa kwayo okuhle kakhulu kanye ne-voltage ephezulu yokuqhekeka kwenza kube kuhle kakhulu kuma-electronics kagesi, njengezishintshi ze-voltage ephezulu, ama-inverter, kanye nama-power converters, asebenza ezimweni ezimbi kakhulu. Ngaphezu kwalokho, ukumelana kwe-substrate emazingeni okushisa aphezulu kanye nokugqwala kuqinisekisa ukusebenza okuzinzile ezindaweni ezinzima. Ukuqondiswa okunembile kwe-〈111〉± 0.5° kuthuthukisa ukunemba kokukhiqiza, okwenza kufaneleke kumadivayisi e-RF kanye nezinhlelo zokusebenza ze-frequency ephezulu, njengezinhlelo ze-radar kanye nemishini yokuxhumana engenantambo.

Izinzuzo ze-substrates ze-N-type SiC ezihlanganisiwe zifaka:

1. Ukushisa Okuphezulu: Ukushabalalisa ukushisa okusebenzayo, okwenza kufaneleke ezindaweni ezishisa kakhulu kanye nezicelo zamandla aphezulu.
2. I-Voltage Ephakeme Yokuwohloka: Iqinisekisa ukusebenza okuthembekile ezinhlelweni zokusebenza ze-voltage ephezulu njengeziguquli zamandla kanye nama-inverter.
3. Izinga le-Zero MPD (Micro Pipe Defect): Iqinisekisa amaphutha amancane, ihlinzeka ngokuqina nokuthembeka okuphezulu kumadivayisi abalulekile kagesi.
4. Ukumelana Nokugqwala: Kuhlala isikhathi eside ezindaweni ezinzima, kuqinisekisa ukusebenza kwesikhathi eside ezimweni ezidinga kakhulu.
5. Ukuqondiswa Okunembile 〈111〉± 0.5°: Kuvumela ukuhambisana okunembile ngesikhathi sokukhiqiza, kuthuthukise ukusebenza kwedivayisi ezinhlelweni zokusebenza zemvamisa ephezulu kanye ne-RF.

 

Sekukonke, i-substrate ye-P-type 4H/6H-P 3C-N engu-4-inch SiC ene-orientation ye-〈111〉± 0.5° kanye ne-Zero MPD grade iyinto esebenza kahle kakhulu efanelekile ezinhlelweni zokusebenza ze-elekthronikhi ezithuthukisiwe. Ukushisa kwayo okuhle kakhulu kanye ne-voltage ephezulu yokuqhekeka kwenza kube kuhle kakhulu kuma-electronics anamandla njengezishintshi ze-voltage ephezulu, ama-inverter, kanye nama-converter. I-Zero MPD grade iqinisekisa amaphutha amancane, inikeza ukuthembeka nokuzinza kumadivayisi abalulekile. Ngaphezu kwalokho, ukumelana kwe-substrate ekugqwaleni kanye namazinga okushisa aphezulu kuqinisekisa ukuqina ezindaweni ezinzima. Ukuqondiswa okunembile kwe-〈111〉± 0.5° kuvumela ukuhambisana okunembile ngesikhathi sokukhiqiza, okwenza ifaneleke kakhulu kumadivayisi e-RF kanye nezinhlelo zokusebenza ze-frequency ephezulu.

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