I-SiC silicon carbideidivayisi ibhekisela kudivayisi eyenziwe nge-silicon carbide njengempahla eluhlaza.
Ngokusho kwezakhiwo ezihlukene zokumelana, ihlukaniswe ngamadivayisi kagesi we-silicon carbide conductive kanyei-semi-insulated silicon carbideImishini ye-RF.
Amafomu wedivayisi eyinhloko kanye nokusetshenziswa kwe-silicon carbide
Izinzuzo eziyinhloko ze-SiC ngaphezuluIzinto zokwakhayilezi:
I-SiC inegebe lebhendi izikhathi ezi-3 kune-Si, enganciphisa ukuvuza futhi yandise ukubekezelelana kwezinga lokushisa.
I-SiC inezikhathi eziyi-10 amandla enkambu yokuwohloka ye-Si, ingathuthukisa ukuminyana kwamanje, imvamisa yokusebenza, imelane nomthamo we-voltage futhi inciphise ukulahleka kokuvala, ifaneleka kakhulu izinhlelo zokusebenza zamandla kagesi aphezulu.
I-SiC inesivinini esiphindwe kabili se-electron saturation drift ye-Si, ngakho-ke ingasebenza ngesivinini esiphezulu.
I-SiC ine-SiC ephindwe izikhathi ezingu-3 ukuguquguquka okushisayo kwe-Si, ukusebenza okungcono kokulahla ukushisa, ingasekela ukuminyana kwamandla aphezulu futhi inciphise izidingo zokulahla ukushisa, yenze idivayisi ibe lula.
I-substrate ye-conductive
I-conductive substrate: Ngokususa ukungcola okuhlukahlukene kukristalu, ikakhulukazi ukungcola kwezinga elingashoni, ukuze kuzuzwe ukumelana okuphezulu kwangaphakathi kwekristalu.
I-Conductivei-silicon carbide substrateIsicwecwana se-SiC
I-conductive silicon carbide power device iwukukhula kwe-silicon carbide epitaxial layer ku-conductive substrate, ishidi le-silicon carbide epitaxial liyacutshungulwa futhi, okuhlanganisa ukukhiqizwa kwama-Schottky diodes, MOSFET, IGBT, njll., asetshenziswa kakhulu ezimotweni zikagesi, amandla e-photovoltaic. ukukhiqiza, ezokuthutha ngololiwe, isikhungo sedatha, ukushaja nezinye izingqalasizinda. Izinzuzo zokusebenza zimi kanje:
Izici zengcindezi ephezulu ezithuthukisiwe. Amandla ensimu kagesi ephukile ye-silicon carbide aphindwe izikhathi ezingaphezu kwezingu-10 kune-silicon, okwenza ukumelana nokucindezela okuphezulu kwamadivayisi we-silicon carbide kuphakame kakhulu kunamadivayisi afanayo e-silicon.
Izici ezingcono zokushisa okuphezulu. I-Silicon carbide ine-thermal conductivity ephakeme kune-silicon, eyenza ukuchithwa kokushisa kwedivayisi kube lula kanye nomkhawulo wokushisa wokusebenza uphakame. Ukumelana nezinga lokushisa eliphezulu kungaholela ekwenyukeni okuphawulekayo kokuminyana kwamandla, kuyilapho kunciphisa izidingo ohlelweni lokupholisa, ukuze itheminali ibe nesisindo esiningi futhi yenziwe i-miniaturized.
Ukusetshenziswa kwamandla okuphansi. ① Idivayisi ye-silicon ye-carbide inokumelana okuphansi kakhulu kanye nokulahlekelwa okuphansi; (2) Ukuvuza kwamanje kwemishini ye-silicon carbide kuncishiswe kakhulu kunaleyo yamadivayisi we-silicon, ngaleyo ndlela kunciphisa ukulahleka kwamandla; ③ Ayikho into yamanje ye-tailing enqubweni yokuvala yamadivayisi we-silicon carbide, futhi ukulahlekelwa kokushintsha kuphansi, okuthuthukisa kakhulu imvamisa yokushintsha yezinhlelo zokusebenza ezingokoqobo.
I-Semi-insulated SiC substrate
I-Semi-insulated SiC substrate: I-N doping isetshenziselwa ukulawula ngokunembile ukumelana nemikhiqizo ye-conductive ngokulinganisa ubudlelwano obuhambisanayo phakathi kokugxiliswa kwe-nitrogen doping, izinga lokukhula kanye nokumelana nekristalu.
Ukuhlanzeka okuphezulu kwe-semi-insulating substrate impahla
Amadivayisi e-RF asuselwa ku-silicon e-semi-insulated enziwa futhi ngokukhula kwe-gallium nitride epitaxial layer ku-semi-insulated silicon carbide substrate ukuze kulungiswe ishidi le-silicon nitride epitaxial, okuhlanganisa i-HEMT namanye amadivaysi e-gallium nitride RF, asetshenziswa kakhulu kwezokuxhumana kwe-5G, ukuxhumana kwezimoto, izicelo zokuzivikela, ukudluliswa kwedatha, i-aerospace.
Izinga le-electron drift eligcwele le-silicon carbide nezinto ze-gallium nitride liphindwe izikhathi ezingu-2.0 nezingu-2.5 kune-silicon ngokulandelanayo, ngakho-ke imvamisa yokusebenza ye-silicon carbide ne-gallium nitride yamadivayisi makhulu kunalawo emishini ye-silicon evamile. Kodwa-ke, izinto ze-gallium nitride zinobubi bokumelana nokushisa okungekuhle, kuyilapho i-silicon carbide inokumelana nokushisa okuhle kanye ne-thermal conductivity, engenza ukumelana nokushisa okumpofu kwamadivayisi we-gallium nitride, ngakho-ke imboni ithatha i-silicon carbide eyi-semi-insulated njenge-substrate. , futhi ungqimba lwe-gan epitaxial lukhuliswa ku-silicon carbide substrate ukuze kwenziwe amadivayisi e-RF.
Uma kukhona ukwephulwa komthetho, susa othintana naye
Isikhathi sokuthumela: Jul-16-2024