I-SiC silicon carbideidivayisi ibhekisela kudivayisi eyenziwe nge-silicon carbide njengento eluhlaza.
Ngokwezakhiwo ezahlukene zokumelana, ihlukaniswe ngamadivayisi wamandla e-silicon carbide aqhubayo kanyei-silicon carbide engangenisi umswakamaAmadivayisi e-RF.
Amafomu amadivayisi ayinhloko kanye nokusetshenziswa kwe-silicon carbide
Izinzuzo eziyinhloko ze-SiC ngaphezuIzinto zokwakhaziyi:
I-SiC inesikhala sebhendi esiphindwe kathathu kune-Si, esinganciphisa ukuvuza futhi sandise ukubekezelelana kwezinga lokushisa.
I-SiC inamandla ensimu yokuqhekeka aphindwe kayishumi kune-Si, ingathuthukisa ubuningi bamanje, imvamisa yokusebenza, imelane nomthamo we-voltage futhi inciphise ukulahleka kokuvula, ifaneleka kakhulu ekusetshenzisweni kwe-voltage ephezulu.
I-SiC inesivinini sokukhukhuleka kwe-electron saturation esiphindwe kabili kune-Si, ngakho ingasebenza ngemvamisa ephezulu.
I-SiC inokushisa okuphindwe kathathu kune-Si, ukusebenza okungcono kokushabalalisa ukushisa, ingasekela ukuminyana kwamandla aphezulu futhi inciphise izidingo zokushabalalisa ukushisa, okwenza idivayisi ibe lula.
I-substrate eqhubayo
I-substrate eqhubayo: Ngokususa ukungcola okuhlukahlukene ku-crystal, ikakhulukazi ukungcola okungajulile, ukuze kufezwe ukumelana okuphezulu kwangaphakathi kwe-crystal.
Ukuqhubai-substrate ye-silicon carbideI-SiC wafer
Idivayisi yamandla e-silicon carbide eqhubayo ikhula ngokukhula kwesendlalelo se-silicon carbide epitaxial ku-substrate eqhubayo, ishidi le-silicon carbide epitaxial liyacutshungulwa kabanzi, okuhlanganisa ukukhiqizwa kwama-diode e-Schottky, i-MOSFET, i-IGBT, njll., asetshenziswa kakhulu ezimotweni zikagesi, ukukhiqizwa kwamandla e-photovoltaic, ukuthutha ngesitimela, isikhungo sedatha, ukushaja kanye nezinye ingqalasizinda. Izinzuzo zokusebenza zimi kanje:
Izici zokucindezela okuphezulu ezithuthukisiwe. Amandla kagesi aqhekekile e-silicon carbide angaphezu kwe-silicon ngokuphindwe kayishumi, okwenza ukumelana nokucindezela okuphezulu kwamadivayisi e-silicon carbide kuphakame kakhulu kunokwamadivayisi e-silicon alinganayo.
Izici ezingcono zokushisa okuphezulu. I-silicon carbide inokushisa okuphezulu kune-silicon, okwenza ukushabalalisa ukushisa kwedivayisi kube lula futhi izinga lokushisa lokusebenza elilinganiselwe libe phezulu. Ukumelana nokushisa okuphezulu kungaholela ekwandeni okukhulu kwamandla, kuyilapho kunciphisa izidingo ohlelweni lokupholisa, ukuze i-terminal ibe lula futhi ibe yincane.
Ukusetshenziswa kwamandla okuphansi. ① Idivayisi ye-silicon carbide inokumelana okuphansi kakhulu kanye nokulahleka okuphansi; (2) Ukuvuza kwamanje kwamadivayisi e-silicon carbide kuncishiswe kakhulu kunokwamadivayisi e-silicon, ngaleyo ndlela kunciphisa ukulahleka kwamandla; ③ Akukho mkhuba wokuvala kwamanje enqubweni yokuvala yamadivayisi e-silicon carbide, futhi ukulahleka kokushintsha kuphansi, okuthuthukisa kakhulu imvamisa yokushintsha kwezicelo ezisebenzayo.
I-substrate ye-SiC engangenisi umswakama
I-substrate ye-SiC engangenisi umswakama: I-N doping isetshenziselwa ukulawula ngokunembile ukumelana kwemikhiqizo eqhuba ngokulinganisa ubudlelwano obuhambisanayo phakathi kokuhlushwa kwe-nitrogen doping, izinga lokukhula kanye nokumelana nekristalu.
Izinto ze-substrate ezivikelayo ezihlanzekile kakhulu
Amadivayisi e-RF asekelwe ku-silicon carbon asekelwe ku-semi-insulated enziwa futhi ngokukhulisa ungqimba lwe-gallium nitride epitaxial ku-substrate ye-silicon carbide esemi-insulated ukuze kulungiselelwe ishidi le-silicon nitride epitaxial, okuhlanganisa ne-HEMT namanye amadivayisi e-gallium nitride RF, asetshenziswa kakhulu ekuxhumaneni kwe-5G, ekuxhumaneni kwezimoto, ekusetshenzisweni kwezokuvikela, ekudlulisweni kwedatha, nasezindiza.
Izinga lokukhukhuleka kwama-electron agcwele lezinto ze-silicon carbide kanye ne-gallium nitride liphindwe izikhathi ezingu-2.0 kanye nezingu-2.5 kunele-silicon ngokulandelana, ngakho-ke imvamisa yokusebenza kwamadivayisi e-silicon carbide kanye ne-gallium nitride inkulu kuneyamadivayisi e-silicon endabuko. Kodwa-ke, izinto ze-gallium nitride zinobubi bokumelana nokushisa okubi, kuyilapho i-silicon carbide inokumelana nokushisa okuhle kanye nokuqhuba ukushisa, okungavala ukumelana nokushisa okubi kwamadivayisi e-gallium nitride, ngakho imboni ithatha i-silicon carbide e-semi-insulated njenge-substrate, bese kuthi ungqimba lwe-gan epitaxial lukhuliswe ku-substrate ye-silicon carbide ukuze kukhiqizwe amadivayisi e-RF.
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Isikhathi sokuthunyelwe: Julayi-16-2024