Ukwembula Umklamo Nokukhiqizwa Kwama-Silicon Carbide (SiC) Chips: Kusukela Eziyisisekelo Kuya Ekusetshenzisweni

Ama-Silicon Carbide (SiC) MOSFET angamadivayisi e-semiconductor asebenza kahle kakhulu asebaluleke kakhulu ezimbonini ezisukela ezimotweni zikagesi kanye namandla avuselelekayo kuya ezenzakalelayo zezimboni. Uma kuqhathaniswa nama-silicon (Si) MOSFET endabuko, ama-SiC MOSFET anikeza ukusebenza okuphezulu ngaphansi kwezimo ezimbi kakhulu, kufaka phakathi amazinga okushisa aphezulu, ama-voltage, kanye nama-frequency. Kodwa-ke, ukufeza ukusebenza okuhle kakhulu kumadivayisi e-SiC kudlula nje ekutholeni ama-substrate asezingeni eliphezulu kanye nezendlalelo ze-epitaxial—kudinga ukwakheka okucophelelayo kanye nezinqubo zokukhiqiza ezithuthukisiwe. Lesi sihloko sinikeza ukuhlolwa okujulile kwesakhiwo sokuklama kanye nezinqubo zokukhiqiza ezivumela ama-SiC MOSFET asebenza kahle kakhulu.

1. Umklamo Wesakhiwo Se-Chip: Ukuhlelwa Okunembile Kokusebenza Kahle Kakhulu

Umklamo wama-SiC MOSFET uqala ngokuhlelwa kwe-I-SiC wafer, okuyisisekelo sazo zonke izici zedivayisi. I-chip ejwayelekile ye-SiC MOSFET iqukethe izingxenye eziningana ezibalulekile ebusweni bayo, okuhlanganisa:

• Iphedi Yomthombo

• I-Gate Pad

• I-Kelvin Source Pad

IIndandatho Yokuqeda Umphetho(nomaIndandatho Yokucindezela) esinye isici esibalulekile esitholakala eduze kwe-chip. Le ring isiza ukuthuthukisa i-voltage yokuqhekeka kwedivayisi ngokunciphisa ukugcwala kwensimu kagesi emaphethelweni e-chip, ngaleyo ndlela kuvinjelwe ukuvuza kwamanzi futhi kuthuthukiswe ukuthembeka kwedivayisi. Ngokuvamile, i-Edge Termination Ring isekelwe ku-Isandiso Sokuphela Kwe-Junction (JTE)isakhiwo, esisebenzisa i-deep doping ukuze kuthuthukiswe ukusatshalaliswa kwensimu kagesi nokuthuthukisa i-voltage yokuqhekeka kwe-MOSFET.

2. Amaseli Asebenzayo: Ingqikithi Yokusebenza Kokushintsha

IAmaseli AsebenzayoKu-SiC MOSFET banesibopho sokuqhuba nokushintshana kwamanje. Lawa maseli ahlelwe ngokuhambisana, inani lamaseli lithinta ngqo ukumelana okuphelele (ama-Rds(on)) kanye nomthamo wamanje we-short-circuit wedivayisi. Ukuze kusebenze kahle, ibanga phakathi kwamaseli (okwaziwa ngokuthi “iphimbo leseli”) liyancishiswa, okuthuthukisa ukusebenza kahle kokuqhuba konke.

Amaseli asebenzayo angaklanywa ngezindlela ezimbili eziyinhloko zesakhiwo:ipulanifuthiumseleizakhiwo. Isakhiwo esihleliwe, nakuba silula futhi sithembekile, sinemikhawulo ekusebenzeni ngenxa yesikhala seseli. Ngokuphambene nalokho, izakhiwo zomsele zivumela ukuhlelwa kwamaseli okuxinene kakhulu, kunciphisa ama-Rds(on) futhi kuvumela ukuphathwa kwamandla kagesi aphezulu. Ngenkathi izakhiwo zomsele zithola ukuthandwa ngenxa yokusebenza kwazo okuphezulu, izakhiwo zomsele zisanikeza izinga eliphezulu lokuthembeka futhi ziyaqhubeka nokulungiswa ukuze zisetshenziswe kwezinye izinhlelo zokusebenza.

3. Isakhiwo se-JTE: Ukuthuthukisa Ukuvinjelwa Kwe-Voltage

IIsandiso Sokuphela Kwe-Junction (JTE)Isakhiwo siyisici esibalulekile sokuklama kuma-SiC MOSFET. I-JTE ithuthukisa ikhono lokuvimba i-voltage yedivayisi ngokulawula ukusatshalaliswa kwensimu kagesi emaphethelweni e-chip. Lokhu kubalulekile ekuvimbeleni ukuwohloka kwangaphambi kwesikhathi emaphethelweni, lapho amasimu kagesi aphezulu evame ukugxila khona.

Ukusebenza kahle kwe-JTE kuncike ezintweni eziningana:

• Ububanzi Besifunda se-JTE kanye Nezinga Lokusebenzisa Imithi Elwa Nokuvuvukala: Ububanzi besifunda se-JTE kanye nokugcwala kwama-dopants kunquma ukusatshalaliswa kwensimu kagesi emaphethelweni edivayisi. Isifunda se-JTE esibanzi nesinomthamo omkhulu singanciphisa insimu kagesi futhi sithuthukise i-voltage yokuqhekeka.

• I-engeli kanye nokujula kwekhoni ye-JTE: I-engeli kanye nokujula kwekhoni ye-JTE kuthinta ukusatshalaliswa kwensimu kagesi futhi ekugcineni kuthinta i-voltage yokuqhekeka. I-engeli encane yekhoni kanye nesifunda se-JTE esijulile kusiza ekunciphiseni amandla ensimu kagesi, ngaleyo ndlela kuthuthukiswe ikhono ledivayisi lokubekezelela ama-voltage aphezulu.

• Ukudlula Komphezulu: Ingqimba yokuphasa ebusweni idlala indima ebalulekile ekunciphiseni imisinga yokuvuza ebusweni kanye nokuthuthukisa i-voltage yokuphuka. Ingqimba yokuphasa elungiselelwe kahle iqinisekisa ukuthi idivayisi isebenza ngokwethembeka ngisho noma inamandla aphezulu.

Ukuphathwa kokushisa kungenye into ebalulekile ekwakhiweni kwe-JTE. Ama-SiC MOSFET ayakwazi ukusebenza emazingeni okushisa aphezulu kune-silicon, kodwa ukushisa okweqile kungonakalisa ukusebenza kwedivayisi nokuthembeka kwayo. Ngenxa yalokho, ukwakheka kokushisa, okuhlanganisa ukushabalalisa ukushisa nokunciphisa ukucindezeleka kokushisa, kubalulekile ekuqinisekiseni ukuzinza kwedivayisi isikhathi eside.

4. Ukushintsha Ukulahlekelwa Nokumelana Nokuqhutshwa Komoya: Ukuthuthukisa Ukusebenza

Kuma-SiC MOSFET,ukumelana nokuqhutshwa komoya(Ama-Rds(on)) kanyeukulahlekelwa kokushintshaKuyizici ezimbili ezibalulekile ezinquma ukusebenza kahle jikelele. Ngenkathi ama-Rds(on) elawula ukusebenza kahle kokuqhuba kwamanje, ukulahlekelwa kokushintsha kwenzeka ngesikhathi sokushintshana phakathi kwezimo zokungena nokuphuma, okufaka isandla ekukhiqizweni kokushisa kanye nokulahlekelwa amandla.

Ukuze kuthuthukiswe la mapharamitha, izici eziningana zokuklama zidinga ukucatshangelwa:

• Iphimbo Leseli: Iphimbo, noma isikhala phakathi kwamaseli asebenzayo, sidlala indima ebalulekile ekunqumeni ama-Rds(on) kanye nesivinini sokushintsha. Ukunciphisa iphimbo kuvumela ukuminyana kwamaseli okuphezulu kanye nokumelana okuphansi kokuhambisa, kodwa ubudlelwano phakathi kosayizi wephimbo kanye nokuthembeka kwesango kumele futhi bulinganiswe ukuze kugwenywe ukuvuza ngokweqile.

• Ubukhulu beSango le-Oxide: Ubukhulu bengqimba ye-gate oxide buthinta amandla e-gate, okuthonya isivinini sokushintsha kanye nama-Rds(on). I-gate oxide encane ikhulisa isivinini sokushintsha kodwa futhi iphakamisa ingozi yokuvuza kwe-gate. Ngakho-ke, ukuthola ubukhulu be-gate oxide obufanele kubalulekile ekulinganiseni isivinini kanye nokuthembeka.

• Ukumelana Nesango: Ukumelana kwezinto zesango kuthinta kokubili isivinini sokushintsha kanye nokumelana kokuqhuba konke. Ngokuhlanganisaukumelana kwesangoUma i-chip ingena ngqo kuyo, ukwakheka kwemojula kuba lula kakhulu, kunciphisa ubunzima kanye namaphuzu okwehluleka okungenzeka enkambisweni yokupakisha.

5. Ukumelana Nesango Elihlanganisiwe: Ukwenza Lula Umklamo Wemodyuli

Kweminye imiklamo ye-SiC MOSFET,ukumelana kwesango okuhlanganisiweisetshenziswa, okwenza kube lula ukwakheka kwemodyuli kanye nenqubo yokukhiqiza. Ngokususa isidingo sama-resistors angaphandle kwesango, le ndlela inciphisa inani lezingxenye ezidingekayo, inciphise izindleko zokukhiqiza, futhi ithuthukise ukuthembeka kwemodyuli.

Ukufakwa kokumelana kwesango ngqo ku-chip kunikeza izinzuzo eziningana:

• Ukuhlanganiswa Kwemodyuli Esenziwe Lula: Ukumelana kwesango okuhlanganisiwe kwenza inqubo yokuxhuma izintambo ibe lula futhi kunciphisa ingozi yokwehluleka.

• Ukwehliswa KwezindlekoUkususa izingxenye zangaphandle kunciphisa izindleko zezinto zokwakha (i-BOM) kanye nezindleko zokukhiqiza zizonke.

• Ukuguquguquka Kokupakisha Okuthuthukisiwe: Ukuhlanganiswa kokumelana kwesango kuvumela ukwakheka kwamamojula amancane futhi asebenzayo, okuholela ekusetshenzisweni kwesikhala okuthuthukisiwe ekupakisheni kokugcina.

6. Isiphetho: Inqubo Eyinkimbinkimbi Yokuklama Yamadivayisi Athuthukisiwe

Ukuklama nokukhiqiza ama-SiC MOSFET kuhilela ukusebenzisana okuyinkimbinkimbi kwamapharamitha amaningi okuklama kanye nezinqubo zokukhiqiza. Kusukela ekwenzeni ngcono ukwakheka kwe-chip, ukwakheka kweseli elisebenzayo, kanye nezakhiwo ze-JTE, kuya ekunciphiseni ukumelana kokuqhuba kanye nokulahlekelwa kokushintsha, ingxenye ngayinye yedivayisi kumele ilungiswe kahle ukuze kufezwe ukusebenza okungcono kakhulu.

Ngokuthuthuka okuqhubekayo kwezobuchwepheshe bokuklama nokukhiqiza, ama-SiC MOSFET aya ngokuya esebenza kahle, ethembekile, futhi engabizi kakhulu. Njengoba isidingo samadivayisi asebenza kahle kakhulu futhi asebenzisa amandla kahle sikhula, ama-SiC MOSFET alungele ukudlala indima ebalulekile ekunikezeni amandla isizukulwane esilandelayo sezinhlelo zikagesi, kusukela ezimotweni zikagesi kuya kumagridi wamandla avuselelekayo nangale kwalokho.