Empilweni yansuku zonke, amadivayisi kagesi afana nama-smartphone nama-smartwatch asephenduke abangane ababalulekile. Lawa madivayisi aya ngokuya encipha kodwa abe namandla kakhulu. Wake wazibuza ukuthi yini evumela ukuthuthuka kwawo okuqhubekayo? Impendulo itholakala ezintweni ze-semiconductor, futhi namuhla, sigxila kwenye yezinto ezivelele kakhulu phakathi kwazo—ikristalu le-saphire.
Ikristalu lesafire, elakhiwe ngokuyinhloko yi-α-Al₂O₃, liqukethe ama-athomu amathathu e-oxygen kanye nama-athomu amabili e-aluminium ahlanganiswe ndawonye, akha isakhiwo se-lattice esinohlangothi olunezinhlangothi eziyisithupha. Ngenkathi ifana nesafire yezinga eliyi-gem ngokubukeka, amakristalu e-safire ezimboni agcizelela ukusebenza okuphezulu. Njengoba ingasebenzisi amakhemikhali, ayincibiliki emanzini futhi imelana nama-acid nama-alkali, isebenza "njengesivikelo samakhemikhali" esigcina ukuzinza ezindaweni ezinzima. Ngaphezu kwalokho, ikhombisa ukucaca okuhle kakhulu kokukhanya, ivumela ukudluliselwa kokukhanya okuphumelelayo; ukuhanjiswa kokushisa okunamandla, ivimbela ukushisa ngokweqile; kanye nokufakwa kogesi okuvelele, okuqinisekisa ukudluliselwa kwesignali okuzinzile ngaphandle kokuvuza. Ngokwemishini, i-safire ine-Mohs yobunzima obungu-9, eyesibili emva kwedayimane, okwenza ukuthi imelane nokuguguleka kakhulu nokuguguleka—ilungele ukusetshenziswa okudinga amandla.
Isikhali Esiyimfihlo Ekukhiqizeni Ama-Chip
(1) Izinto Ezibalulekile Zama-Chips Anamandla Aphansi
Njengoba ama-electronics ethambekele ekuncipheni nasekusebenzeni okuphezulu, ama-chip anamandla aphansi abe yinto ebalulekile. Ama-chip endabuko ahlushwa ukuwohloka kokufakwa kokushisa ekujiyileni kwe-nanoscale, okuholela ekuvuza kwamanje, ukusetshenziswa kwamandla okwandisiwe, kanye nokushisa ngokweqile, okuphazamisa ukuzinza nokuphila isikhathi eside.
Abacwaningi e-Shanghai Institute of Microsystem and Information Technology (SIMIT), i-Chinese Academy of Sciences, bathuthukise ama-wafer e-dielectric e-sapphire asetshenziswayo besebenzisa ubuchwepheshe be-oxidation obuhlanganisiwe ngensimbi, baguqula i-aluminium eyodwa ibe yi-alumina eyodwa (i-sapphire). Ngobukhulu obuyi-1 nm, le nto ikhombisa ukuvuza okuphansi kakhulu, isebenza kangcono kune-dielectrics evamile engavamile ngama-oda amabili ngobukhulu ekunciphiseni ubuningi besimo kanye nokuthuthukisa ikhwalithi yesikhombimsebenzisi ngama-semiconductors e-2D. Ukuhlanganisa lokhu nezinto ze-2D kwenza ama-chip anamandla aphansi, kwandise kakhulu impilo yebhethri kuma-smartphone futhi kuthuthukisa ukuzinza kwezinhlelo zokusebenza ze-AI kanye ne-IoT.
(2) Umlingani Ophelele weGallium Nitride (GaN)
Ensimini ye-semiconductor, i-gallium nitride (GaN) ivele njengenkanyezi ekhanyayo ngenxa yezinzuzo zayo eziyingqayizivele. Njengento ye-semiconductor ye-wide-bandgap ene-bandgap engu-3.4 eV—enkulu kakhulu kune-silicon's 1.1 eV—i-GaN ihamba phambili ekusetshenzisweni kwezinga lokushisa eliphezulu, i-voltage ephezulu, kanye ne-frequency ephezulu. Ukuhamba kwayo okuphezulu kwama-electron kanye namandla ensimu okuqhekeka okubucayi kwenza kube yinto efanelekile yamadivayisi kagesi anamandla aphezulu, izinga lokushisa eliphezulu, i-frequency ephezulu, kanye nokukhanya okuphezulu. Kuma-electronics anamandla, amadivayisi asekelwe ku-GaN asebenza kuma-frequency aphezulu ngokusetshenziswa kwamandla okuphansi, anikeza ukusebenza okuphezulu ekuguqulweni kwamandla kanye nokuphathwa kwamandla. Ekuxhumaneni nge-microwave, i-GaN inika amandla izingxenye zamandla aphezulu, i-frequency ephezulu njenge-5G power amplifiers, okuthuthukisa ikhwalithi yokudlulisa isignali kanye nokuzinza.
Ikristalu le-sapphire libhekwa “njengomlingani ophelele” we-GaN. Nakuba ukungafani kwayo kwe-lattice ne-GaN kuphakeme kunokwe-silicon carbide (SiC), ama-substrate e-sapphire abonisa ukungalingani okuphansi kokushisa ngesikhathi se-epitaxy ye-GaN, okuhlinzeka ngesisekelo esiqinile sokukhula kwe-GaN. Ngaphezu kwalokho, ukuhanjiswa kokushisa okuhle kakhulu kwe-sapphire kanye nokubonakala okubonakalayo kwenza kube lula ukushabalalisa ukushisa okuphumelelayo kumadivayisi e-GaN anamandla aphezulu, okuqinisekisa ukuzinza kokusebenza kanye nokusebenza kahle kokukhipha ukukhanya. Izakhiwo zayo zokushisa zikagesi eziphakeme zinciphisa kakhulu ukuphazamiseka kwesignali kanye nokulahlekelwa amandla. Ukuhlanganiswa kwe-sapphire ne-GaN kuholele ekuthuthukisweni kwamadivayisi asebenza kahle, kufaka phakathi ama-LED asekelwe ku-GaN, alawula izimakethe zokukhanyisa nezibonisi—kusukela kuma-bulb e-LED asekhaya kuya kuzikrini ezinkulu zangaphandle—kanye nama-diode e-laser asetshenziswa ekuxhumaneni okubonakalayo kanye nokucubungula i-laser ngokunemba.
I-wafer ye-XKH ye-GaN-on-saphire
Ukwandisa Imingcele Yezicelo Ze-Semiconductor
(1) “Isihlangu” Ezicelweni Zezempi Nezezindiza
Imishini ekusetshenzisweni kwezempi kanye nezindiza ivame ukusebenza ngaphansi kwezimo ezimbi kakhulu. Emkhathini, izindiza zomkhathi zibekezelela amazinga okushisa acishe abe yi-zero, imisebe enamandla yendawo yonke, kanye nezinselele zendawo engenamuntu. Izindiza zempi, okwamanje, zibhekene namazinga okushisa angaphezu kuka-1,000°C ngenxa yokushisa kwe-aerodynamic ngesikhathi sokundiza ngesivinini esikhulu, kanye nemithwalo ephezulu yemishini kanye nokuphazamiseka kwe-electromagnetic.
Izakhiwo eziyingqayizivele zekristalu le-sapphire ziyenza ibe yinto efanelekile yezingxenye ezibalulekile kulezi zinsimu. Ukumelana kwayo okumangalisayo nokushisa okuphezulu—okumelana nokushisa okufika ku-2,045°C ngenkathi kugcinwa ubuqotho besakhiwo—kuqinisekisa ukusebenza okuthembekile ngaphansi kokucindezeleka kokushisa. Ubulukhuni bayo bokukhanya buphinde bulondoloze ukusebenza ezindaweni zasemkhathini nezenuzi, buvikela ngempumelelo ama-elekthronikhi abucayi. Lezi zimfanelo ziholele ekusetshenzisweni kabanzi kwe-sapphire kumafasitela e-infrared (IR) okushisa okuphezulu. Ezinhlelweni zokuqondisa ama-missile, amafasitela e-IR kumele agcine ukucaca kokukhanya ngaphansi kokushisa okukhulu kanye nesivinini ukuqinisekisa ukutholwa okunembile kwenhloso. Amafasitela e-IR asekelwe ku-sapphire ahlanganisa ukuzinza okuphezulu kokushisa nokudluliselwa kwe-IR okuphezulu, okuthuthukisa kakhulu ukunemba kokuqondisa. Endizeni, i-sapphire ivikela izinhlelo zokukhanya zesathelayithi, ivumela ukuthwebula izithombe okucacile ezimweni ezinzima ze-orbital.
Ama-XKHamafasitela e-sapphire optical
(2) Isisekelo Esisha Sama-Superconductors kanye nama-Microelectronics
Ekuqhubeni kokuqhuba okuphezulu, i-sapphire isebenza njengesisekelo esibalulekile samafilimu amancane aqhuba okuphezulu, okuvumela ukuqhutshwa kwe-zero-resistance—okuguqula ukudluliswa kwamandla, izitimela ze-maglev, kanye nezinhlelo ze-MRI. Amafilimu aqhuba okuphezulu adinga ama-substrate anezakhiwo ze-lattice ezizinzile, futhi ukuhambisana kwe-sapphire nezinto ezifana ne-magnesium diboride (MgB₂) kuvumela ukukhula kwamafilimu anokuqina kwamanje okubalulekile kanye nensimu yamagnetic ebalulekile. Isibonelo, izintambo zikagesi ezisebenzisa amafilimu aqhuba okuphezulu asekelwa yi-sapphire zithuthukisa kakhulu ukusebenza kahle kokudlulisela ngokunciphisa ukulahleka kwamandla.
Kuma-microelectronics, ama-substrate e-sapphire anezindlela ezithile ze-crystallographic—njenge-R-plane (<1-102>) kanye ne-A-plane (<11-20>)—avumela izendlalelo ze-silicon epitaxial ezenzelwe ama-circuits ahlanganisiwe athuthukisiwe (ama-IC). I-R-plane Sapphire yehlisa amaphutha e-crystal kuma-IC asheshayo, okwandisa isivinini sokusebenza kanye nokuqina, kuyilapho izakhiwo zokuvikela ze-A-plane Sapphire kanye ne-permittivity efanayo kuthuthukisa ukuhlanganiswa kwe-hybrid microelectronics kanye ne-high-temperature superconductor. Lawa ma-substrate asekela ama-core chips engqalasizinda yekhompyutha esebenza kahle kanye nezokuxhumana.
XKH'sAI-Wafer ye-lN-on-NPSS
Ikusasa Le-Sapphire Crystal Kuma-Semiconductors
I-Sapphire isivele ibonise inani elikhulu kuzo zonke i-semiconductors, kusukela ekwakhiweni kwama-chip kuya kuma-aerospace nama-superconductors. Njengoba ubuchwepheshe buthuthuka, indima yayo izokhula kakhulu. Kubuhlakani bokwenziwa, ama-chip asekelwa yi-sapphire anamandla aphansi, asebenza kahle azoqhuba intuthuko ye-AI kwezempilo, ezokuthutha, kanye nezezimali. Ku-quantum computing, izakhiwo zezinto ze-sapphire ziyibeka njengomuntu othembisayo wokuhlanganiswa kwe-qubit. Okwamanje, amadivayisi e-GaN-on-sapphire azohlangabezana nezidingo ezikhulayo zehadiwe yokuxhumana ye-5G/6G. Ukuqhubekela phambili, i-sapphire izohlala iyitshe lesisekelo lokusungula izinto ezintsha ze-semiconductor, inika amandla intuthuko yezobuchwepheshe yesintu.
I-wafer ye-epitaxial ye-XKH's GaN-on-sapphire
I-XKH inikeza amafasitela e-sapphire optical aklanywe ngokunemba kanye nezixazululo ze-GaN-on-sapphire wafer zezinhlelo zokusebenza ezisezingeni eliphezulu. Sisebenzisa ubuchwepheshe bokukhulisa amakristalu obukhethekile kanye nobuchwepheshe bokupholisha obuncane, sinikeza amafasitela e-sapphire acwebezelayo kakhulu anokudluliselwa okuhle kakhulu kusuka ku-UV kuya ku-IR spectra, afanelekela izindiza, ukuzivikela, kanye nezinhlelo ze-laser ezinamandla aphezulu.
Isikhathi sokuthunyelwe: Ephreli-18-2025