Ezimpilweni zansuku zonke, izinto zikagesi ezinjengama-smartphones namawashi ahlakaniphile asephenduke abangane ababalulekile. Lawa madivayisi aya ngokuya abe mncane kodwa abe namandla kakhulu. Wake wazibuza ukuthi yini eyenza ukuziphendukela kwemvelo kwabo okuqhubekayo? Impendulo itholakala ezintweni zokwakha ze-semiconductor, futhi namuhla, sigxila kwenye yezinto ezivelele kakhulu phakathi kwazo-i-sapphire crystal.
Ikristalu ye-Sapphire, ngokuyinhloko eyakhiwe i-α-Al₂O₃, iqukethe ama-athomu amathathu omoya-mpilo kanye nama-athomu amabili e-aluminium ahlanganiswe ngokuhlanganyela, akha uhlaka lwe-lattice ene-hexagonal. Nakuba ifana nesafire yezinga eliyigugu ngokubukeka, amakristalu esafire yezimboni agcizelela ukusebenza okuphezulu. I-inert yamakhemikhali, ayincibiliki emanzini futhi imelana nama-asidi nama-alkali, esebenza “njengesivikelo samakhemikhali” esigcina ukuzinza ezindaweni ezinokhahlo. Ukwengeza, ibonisa ukukhanya okuhle kakhulu kwe-optical, okuvumela ukudluliswa kokukhanya okuphumelelayo; conductivity eqinile ezishisayo, ukuvimbela overheating; kanye nokufakwa kukagesi okuvelele, okuqinisekisa ukudluliswa kwesignali okuzinzile ngaphandle kokuvuza. Ngokwemishini, isafire inobulukhuni be-Mohs obungu-9, okwesibili ngemuva kwedayimane, iyenza ibe namandla kakhulu okuguga kanye nokuguguleka—ilungele izicelo ezifunwayo.
Isikhali Esiyimfihlo Ekwenziweni Kwe-chip
(1) Izinto Ezibalulekile Zama-Chip Amandla Aphansi
Njengoba i-elekthronikhi ithambekela ekusetshenzisweni okuncane nokusebenza okuphezulu, ama-chips anamandla aphansi asebucayi. Ama-chips endabuko ahlushwa ukuwohloka kwe-insulation kubukhulu be-nanoscale, okuholela ekuvuzeni kwamanje, ukusetshenziswa kwamandla okwenyuka, kanye nokushisa ngokweqile, okubeka engcupheni ukuzinza nempilo yokuphila.
Abacwaningi e-Shanghai Institute of Microsystem and Information Technology (SIMIT), i-Chinese Academy of Sciences, bathuthukise ama-wafer enziwe ngesafire enziwe nge-dielectric esebenzisa ubuchwepheshe be-metal-intercalated oxidation, ukuguqula i-single-crystal aluminium ibe yi-single-crystal alumina (sapphire). Ku-1 nm ukujiya, le nto ibonisa ukuvuza kwamanje okuphansi kakhulu, okudlula ukusebenza kwe-amorphous dielectrics evamile ngama-oda amabili obukhulu ekunciphiseni ukuminyana kwesifunda kanye nokuthuthukisa ikhwalithi yesixhumi esibonakalayo ngama-semiconductors e-2D. Ukuhlanganisa lokhu nezinto ze-2D kwenza ama-chips anamandla aphansi, andise kakhulu impilo yebhethri kuma-smartphones futhi kuthuthukisa ukuzinza ezinhlelweni ze-AI ne-IoT.
(2) Uzakwethu Ophelele we-Gallium Nitride (GaN)
Emkhakheni we-semiconductor, i-gallium nitride (GaN) ivele njengenkanyezi ekhanyayo ngenxa yezinzuzo zayo eziyingqayizivele. Njengempahla yesemiconductor ene-bandgap ebanzi ene-bandgap engu-3.4 eV—enkulu ngokuphawulekayo kune-silicon's 1.1 eV—I-GaN idlula kahle kakhulu ekusetshenzisweni kwezinga lokushisa eliphezulu, ugesi ophezulu, kanye ne-high-frequency. Ukuhamba kwayo kwe-electron ephezulu namandla enkambu yokwephuka okubalulekile kuyenza ibe into efanelekile yamadivayisi we-elekthronikhi anamandla amakhulu, izinga lokushisa eliphezulu, imvamisa ephezulu, kanye nokukhanya okuphezulu. Ngamandla kagesi, amadivayisi asuselwa ku-GaN asebenza kumafrikhwensi aphezulu asebenzisa amandla aphansi, anikeza ukusebenza okuphezulu ekuguquleni amandla nasekulawuleni amandla. Kwezokuxhumana nge-microwave, i-GaN inika amandla amandla aphezulu, izingxenye zefrikhwensi ephezulu njengezikhulisi zamandla we-5G, ithuthukisa ikhwalithi yokudluliswa kwesignali nokuzinza.
Ikristalu ye-Sapphire ithathwa “njengozakwethu ophelele” we-GaN. Nakuba ukungafani kwe-lattice yayo ne-GaN kuphakeme kunaleyo ye-silicon carbide (SiC), ama-sapphire substrates abonisa ukungafani okuphansi kokushisa phakathi ne-GaN epitaxy, ehlinzeka ngesisekelo esizinzile sokukhula kwe-GaN. Ukwengeza, ukusebenza kahle kwesafire kwe-thermal conductivity kanye nokukhanyela kwe-optical kusiza ukulahlwa kokushisa okuphumelelayo kumadivayisi we-GaN enamandla amakhulu, okuqinisekisa ukuzinza kokusebenza nokusebenza kahle kokukhanya okukhipha ukukhanya. Izici zayo eziphakeme zokuvala ugesi ziphinde zinciphise ukuphazamiseka kwesignali nokulahlekelwa amandla. Inhlanganisela yesafire ne-GaN iholele ekuthuthukisweni kwamadivayisi asebenza kahle kakhulu, okuhlanganisa nama-LED asekelwe ku-GaN, abusa izimakethe zokukhanyisa nezibonisi—kusuka kuma-LED amalambu asendlini kuya kuzikrini ezinkulu zangaphandle—kanye nama-laser diode asetshenziswa kwezokuxhumana okubonakalayo nasekucutshungulweni kwe-laser ngokunemba.
I-XKH's GaN-on-sapphire wafer
Ukunweba Imingcele Yezicelo Ze-Semiconductor
(1) “Isihlangu” Kuhlelo Lwezempi Nezasemoyeni
Izisetshenziswa ezisetshenziswa ezempi kanye ne-aerospace ngokuvamile zisebenza ngaphansi kwezimo ezimbi kakhulu. Emkhathini, imikhumbi-mkhathi ibekezelela amazinga okushisa acishe abe ziro, imisebe ye-cosmic enamandla, nezinselele zendawo engenalutho. Izindiza zamasosha, ngakolunye uhlangothi, zibhekana namazinga okushisa angaphezulu kuka-1,000°C ngenxa yokushisisa kwe-aerodynamic phakathi nesivinini sokundiza, kanye nemithwalo yemishini ephezulu kanye nokuphazamiseka kazibuthe kagesi.
Izakhiwo ezihlukile zekristalu ye-Sapphire ziyenza ibe into efanelekile yezingxenye ezibalulekile kule mikhakha. Ukumelana kwayo okukhethekile kwezinga lokushisa eliphezulu—imelana kufika ku-2,045°C kuyilapho igcina ubuqotho besakhiwo—iqinisekisa ukusebenza okuthembekile ngaphansi kwengcindezi yokushisa. Ubulukhuni bayo bemisebe buphinde bulondoloze ukusebenza endaweni ye-cosmic kanye ne-nuclear, kuvikela ngempumelelo izinto zikagesi ezizwelayo. Lezi zibaluli ziholele ekusetshenzisweni kwesafire kabanzi kumafasitela we-infrared (IR) enezinga eliphezulu lokushisa. Kumasistimu okuqondisa imicibisholo, amafasitela e-IR kufanele agcine ukukhanya okukhanyayo ngaphansi kokushisa okudlulele nesivinini ukuze kuqinisekiswe ukutholwa okunembile kwethagethi. Amawindi e-IR asekelwe ku-Sapphire ahlanganisa ukuzinza okuphezulu kokushisa nokudluliswa kwe-IR okuphakeme, athuthukisa kakhulu ukunemba kwesiqondiso. Emkhathini, isafire ivikela amasistimu okukhanya kwesathelayithi, ivumela ukuthwebula izithombe ezicacile ezimeni ezinzima ze-orbital.
I-XKH'samafasitela e-sapphire optical
(2) Isisekelo Esisha Sama-Superconductors nama-Microelectronics
Ku-superconductivity, isafire isebenza njengengxenye ebalulekile yamafilimu amancanyana amakhulu, avumela ukuqhutshwa kwe-zero-resistance-okuguqula ukudluliswa kwamandla, izitimela ze-maglev, nezinhlelo ze-MRI. Amafilimu asebenza kahle kakhulu e-superconducting adinga ama-substrates anezakhiwo ze-lattice ezizinzile, futhi ukuhambisana kwesafire nezinto ezifana ne-magnesium diboride (MgB₂) kuvumela ukukhula kwamafilimu anomthamo wamanje obalulekile othuthukisiwe kanye nenkundla kazibuthe ebalulekile. Isibonelo, izintambo zikagesi ezisebenzisa amafilimu e-superconducting asekelwa ngesafire athuthukisa kakhulu ukusebenza kahle kokudlulisela ngokunciphisa ukulahleka kwamandla.
Kuma-microelectronics, ama-sapphire substrates anomumo othize we-crystallographic—njengendiza engu-R (<1-102>) kanye nendiza engu-A (<11-20>)—inika amandla izendlalelo ze-silicon epitaxial ezithuthukisiwe zamasekethe ahlanganisiwe (ICs). Isafire ye-R-plane inciphisa ukonakala kwekristalu kuma-ICs anesivinini esiphezulu, ikhulisa isivinini sokusebenza nokuzinza, kuyilapho izakhiwo zokuvikela isafire ye-A-plane nokuvunyelwa okufanayo kuthuthukisa i-hybrid microelectronics kanye nokuhlanganiswa kwe-superconductor yezinga eliphezulu lokushisa. Lawa ma-substrates asekela ama-chips abalulekile kungqalasizinda yekhompuyutha esebenza kahle kanye nezokuxhumana.
XKH'sAI-lN-on-NPSS Wafer
Ikusasa Le-Sapphire Crystal kumaSemiconductors
I-Sapphire isivele ibonise inani elikhulu kuwo wonke ama-semiconductors, kusukela ekwenziweni kwama-chip kuya kwi-aerospace nama-superconductors. Njengoba ubuchwepheshe buthuthuka, indima yabo izokhula kakhulu. Ngobuhlakani bokwenziwa, amandla aphansi asekelwa ngesafire, ama-chips asebenza kahle azoshayela intuthuko ye-AI ekunakekelweni kwezempilo, ezokuthutha, kanye nezezimali. Kukhompyutha ye-quantum, izinto ezibonakalayo zesafire zibeka njengekhandidethi elithembisayo lokuhlanganiswa kwe-qubit. Ngaleso sikhathi, amadivayisi we-GaN-on-sapphire azohlangabezana nezidingo ezikhulayo zehadiwe yokuxhumana ye-5G/6G. Ukuqhubekela phambili, isafire izohlala iyitshe lesisekelo lokuqamba okusha kwe-semiconductor, inika amandla inqubekelaphambili yezobuchwepheshe yabantu.
I-XKH's GaN-on-sapphire epitaxial wafer
I-XKH iletha amawindi okukhanya wesafire akhiwe ngokunemba kanye nezixazululo ze-GaN-on-sapphire wafer zezinhlelo zokusebenza ezisezingeni eliphezulu. Ngokusebenzisa ukukhula kwekristalu lobunikazi nobuchwepheshe bokupholisha i-nanoscale, sihlinzeka ngamawindi esafire ayisicaba ngokudluliswa okukhethekile ukusuka ku-UV kuya ku-IR spectra, alungele i-aerospace, ukuzivikela, namasistimu e-laser enamandla kakhulu.
Isikhathi sokuthumela: Apr-18-2025