Uma kuqhathaniswa namadivayisi we-silicon carbide, amadivayisi kagesi we-gallium nitride azoba nezinzuzo ezengeziwe ezimweni lapho ukusebenza kahle, imvamisa, umthamo kanye nezinye izici eziphelele zidingeka ngesikhathi esifanayo, njengamadivayisi asekelwe ku-gallium nitride asetshenziswe ngempumelelo emkhakheni wokushaja okusheshayo isilinganiso esikhulu.Ngokuqubuka kwezinhlelo zokusebenza ezintsha ezansi nomfula, kanye nokuthuthuka okuqhubekayo kobuchwepheshe bokulungiselela i-gallium nitride substrate, amadivaysi e-GaN kulindeleke ukuthi aqhubeke nokukhula ngevolumu, futhi azoba obunye bobuchwepheshe obubalulekile bokunciphisa izindleko nokusebenza kahle, ukuthuthukiswa kohlaza okusimeme.
Njengamanje, isizukulwane sesithathu sezinto zokwakha ze-semiconductor sesiyingxenye ebalulekile yezimboni ezisafufusa ezinamasu, futhi futhi isiba yindawo yokulawula yamasu yokubamba isizukulwane esilandelayo sobuchwepheshe bolwazi, ukongiwa kwamandla kanye nokunciphisa ukungcola kanye nobuchwepheshe bezokuphepha bokuvikela izwe.Phakathi kwazo, i-gallium nitride (i-GaN) ingenye yezinto ezimele kakhulu ze-semiconductor yesizukulwane sesithathu njengento ebanzi ye-bandgap semiconductor ene-bandgap engu-3.4eV.
Ngomhla zi-3 kuJulayi, i-China yaqinisa ukuthunyelwa kwamanye amazwe izinto ezihlobene ne-gallium ne-germanium, okuwukulungiswa kwenqubomgomo okubalulekile okusekelwe esicini esibalulekile se-gallium, insimbi eyivelakancane, “njengohlamvu olusha lwemboni ye-semiconductor,” kanye nezinzuzo zayo zokusetshenziswa okubanzi izinto zokwakha ze-semiconductor, amandla amasha kanye neminye imikhakha.Ngenxa yalolu shintsho lwenqubomgomo, leli phepha lizoxoxa futhi lihlaziye i-gallium nitride kusukela ezicini zobuchwepheshe bokulungiselela nezinselele, amaphuzu okukhula amasha esikhathini esizayo, kanye nephethini yokuncintisana.
Isingeniso esifushane:
I-Gallium nitride iwuhlobo lwe-synthetic semiconductor material, emele isizukulwane sesithathu sezinto zokwakha ze-semiconductor.Uma kuqhathaniswa nezinto ze-silicon zendabuko, i-gallium nitride (i-GaN) inezinzuzo ze-band-gap enkulu, inkambu kagesi ephukile eqinile, ukumelana okuphansi, ukuhamba kwe-electron ephezulu, ukusebenza kahle kokuguqulwa, ukuqhutshwa kwe-thermal okuphezulu nokulahlekelwa okuphansi.
I-Gallium nitride single crystal iyisizukulwane esisha sezinto zokwakha ze-semiconductor ezisebenza kahle kakhulu, ezingasetshenziswa kabanzi kwezokuxhumana, i-radar, i-electronics yabathengi, i-automotive electronics, amandla kagesi, ukucutshungulwa kwe-laser yezimboni, i-instrumentation kanye neminye imikhakha, ngakho-ke ukuthuthukiswa kwayo kanye nokukhiqizwa okukhulu. ukugxila kokunaka kwamazwe nezimboni emhlabeni jikelele.
Ukusetshenziswa kwe-GaN
Isiteshi sesisekelo sokuxhumana se-1--5G
Ingqalasizinda yokuxhumana okungenantambo iyindawo eyinhloko yokusetshenziswa kwemishini ye-gallium nitride RF, ebalelwa ku-50%.
2--Ukunikezwa kwamandla aphezulu
Isici "sobude obuphindwe kabili" se-GaN sinamandla amakhulu okungena kumishini kagesi esebenza kahle yabathengi, engahlangabezana nezimfuneko zokushaja okusheshayo nezimo zokuvikela ukushaja.
3--Imoto yamandla entsha
Ngokombono wesicelo esisebenzayo, amadivaysi amanje esizukulwane sesithathu semiconductor emotweni ikakhulukazi amadivaysi e-silicon carbide, kodwa kukhona izinto ezifanele ze-gallium nitride ezingaphasa isitifiketi sokulawulwa kwemoto yamamojula wedivayisi yamandla, noma ezinye izindlela zokupakisha ezifanele. isamukelwa yiyo yonke imboni kanye nabakhiqizi be-OEM.
4--Isikhungo sedatha
Ama-semiconductors kagesi we-GaN asetshenziswa kakhulu kumayunithi okuphakela amandla e-PSU ezikhungweni zedatha.
Kafushane, ngokuqubuka kwezinhlelo zokusebenza ezintsha ezansi nomfula kanye nempumelelo eqhubekayo kubuchwepheshe bokulungiselela i-gallium nitride substrate, amadivayisi we-GaN kulindeleke ukuthi aqhubeke nokukhula ngevolumu, futhi azoba obunye bobuchwepheshe obubalulekile bokunciphisa izindleko nokusebenza kahle kanye nokuthuthukiswa kohlaza okusimeme.
Isikhathi sokuthumela: Jul-27-2023