Izingxenyana Ze-Semiconductor Zesizukulwane Esilandelayo: I-Sapphire, i-Silicon, ne-Silicon Carbide

Embonini ye-semiconductor, ama-substrate ayizinto eziyisisekelo lapho ukusebenza kwedivayisi kuncike khona. Izakhiwo zawo zomzimba, ezishisayo, kanye nezikagesi zithinta ngqo ukusebenza kahle, ukuthembeka, kanye nobubanzi bokusetshenziswa. Phakathi kwazo zonke izinketho, i-sapphire (Al₂O₃), i-silicon (Si), kanye ne-silicon carbide (SiC) sezibe yizinto ezisetshenziswa kakhulu, ngayinye ihamba phambili ezindaweni ezahlukene zobuchwepheshe. Lesi sihloko sihlola izici zazo zezinto, izindawo zokusetshenziswa, kanye nezitayela zentuthuko yesikhathi esizayo.

I-Sapphire: Ihhashi Lokusebenza Elibonakalayo

I-Sapphire iwuhlobo lwe-aluminium oxide oluyikristalu elilodwa olune-lattice enezinhlangothi eziyisithupha. Izakhiwo zayo ezibalulekile zifaka phakathi ubulukhuni obungavamile (ubulukhuni be-Mohs 9), ukukhanya okubanzi kokukhanya kusukela ku-ultraviolet kuya ku-infrared, kanye nokumelana okunamandla kwamakhemikhali, okwenza kube kuhle kakhulu kumadivayisi e-optoelectronic nasezindaweni ezinzima. Amasu okukhula athuthukile njenge-Heat Exchange Method kanye nendlela ye-Kyropoulos, ehlanganiswe ne-chemical-mechanical polishing (CMP), akhiqiza ama-wafers anobulukhuni bomphezulu obungaphansi kwe-nanometer.

Ama-substrate e-sapphire asetshenziswa kabanzi kuma-LED nama-Micro-LED njengezendlalelo ze-GaN epitaxial, lapho ama-substrate e-sapphire anephethini (i-PSS) athuthukisa ukusebenza kahle kokukhipha ukukhanya. Asetshenziswa futhi kumadivayisi e-RF asebenza ngesivinini esiphezulu ngenxa yezakhiwo zawo zokuvikela ugesi, kanye nasezinhlelweni ze-electronics zabathengi kanye nezindiza njengezivikelo zamafasitela nezinzwa. Imikhawulo ifaka phakathi ukuhanjiswa kokushisa okuphansi (35–42 W/m·K) kanye nokungafani kwe-lattice ne-GaN, okudinga izendlalelo ze-buffer ukuze kuncishiswe amaphutha.

I-Silicon: Isisekelo seMicroelectronics

I-Silicon isalokhu ingumgogodla wezinto zikagesi zendabuko ngenxa yesimo sayo sezimboni esivuthiwe, ukuqhutshwa kukagesi okulungisekayo ngokusebenzisa i-doping, kanye nezakhiwo zokushisa ezilinganiselayo (ukuqhutshwa kokushisa ~150 W/m·K, iphuzu lokuncibilika 1410°C). Ngaphezu kwama-90% amasekethe ahlanganisiwe, kufaka phakathi ama-CPU, imemori, namadivayisi e-logic, enziwa kuma-wafer e-silicon. I-Silicon iphinde ilawule amaseli e-photovoltaic futhi isetshenziswa kabanzi kumadivayisi wamandla aphansi kuya kwaphakathi njenge-IGBTs kanye nama-MOSFET.

Kodwa-ke, i-silicon ibhekene nezinselele ekusetshenzisweni kwe-high voltage kanye ne-high-frequency ngenxa ye-bandgap yayo encane (1.12 eV) kanye ne-bandgap engaqondile, ekhawulela ukusebenza kahle kokukhishwa kokukhanya.

I-Silicon Carbide: Umsunguli Onamandla Aphezulu

I-SiC iyinto yesizukulwane sesithathu ye-semiconductor ene-bandgap ebanzi (3.2 eV), i-voltage ephezulu yokuqhekeka (3 MV/cm), i-thermal conductivity ephezulu (~490 W/m·K), kanye nesivinini sokugcwala kwama-electron esisheshayo (~2×10⁷ cm/s). Lezi zici ziyenza ifaneleke kakhulu kumadivayisi ane-voltage ephezulu, amandla aphezulu, kanye ne-frequency ephezulu. Ama-substrate e-SiC ngokuvamile akhuliswa nge-physical vapor transport (PVT) emazingeni okushisa angaphezu kuka-2000°C, ngezidingo zokucubungula eziyinkimbinkimbi nezinembile.

Izicelo zifaka phakathi izimoto zikagesi, lapho ama-SiC MOSFET athuthukisa ukusebenza kahle kwe-inverter ngo-5–10%, izinhlelo zokuxhumana ze-5G ezisebenzisa i-SiC evikela kancane amadivayisi e-GaN RF, kanye nama-grid ahlakaniphile anokudluliselwa kwamandla aqondile aphezulu (i-HVDC) okunciphisa ukulahlekelwa kwamandla ngamaphesenti angama-30%. Imikhawulo yizindleko eziphakeme (ama-wafer angu-6 intshi abiza kakhulu ngokuphindwe ka-20–30 kune-silicon) kanye nezinselele zokucubungula ngenxa yobunzima obukhulu.

Izindima Ezihambisanayo kanye Nombono Wesikhathi Esizayo

I-Sapphire, i-silicon, kanye ne-SiC zakha uhlelo oluhambisanayo lwe-substrate embonini ye-semiconductor. I-Sapphire ibusa ama-optoelectronics, i-silicon isekela ama-microelectronics endabuko kanye namadivayisi wamandla aphansi kuya kwaphakathi, kanti i-SiC ihola ama-electronics wamandla aphezulu, ama-frequency aphezulu, kanye nokusebenza kahle okuphezulu.

Intuthuko yesikhathi esizayo ifaka phakathi ukwandisa izinhlelo zokusebenza ze-sapphire kuma-LED ajulile e-UV nama-micro-LED, okuvumela i-Si-based GaN heteroepitaxy ukuthuthukisa ukusebenza kwemvamisa ephezulu, kanye nokukhulisa ukukhiqizwa kwe-SiC wafer kube ngamasentimitha angu-8 ngokukhiqiza okuthuthukisiwe kanye nokusebenza kahle kwezindleko. Ndawonye, ​​lezi zinto ziqhuba ukusungula izinto ezintsha ku-5G, AI, kanye nokuhamba kukagesi, okwakha isizukulwane esilandelayo sobuchwepheshe be-semiconductor.