U: Yibuphi ubuchwepheshe obuyinhloko obusetshenziswa ekusikeni nasekucubunguleni i-SiC wafer?
A:I-silicon carbide (SiC) inobulukhuni obulandela idayimane kuphela futhi ibhekwa njengento eqinile kakhulu futhi ephuka kalula. Inqubo yokusika, ehilela ukusika amakristalu akhulile abe ama-wafer amancane, idla isikhathi futhi ithambekele ekuqhekekeni. Njengesinyathelo sokuqalaI-SiCUma kucutshungulwa ngekristalu elilodwa, ikhwalithi yokusika ithonya kakhulu ukugaya, ukupholisha, kanye nokunciphisa okulandelayo. Ukusika kuvame ukwethula imifantu engaphezulu nangaphansi komhlaba, okwandisa amazinga okuphuka kwe-wafer kanye nezindleko zokukhiqiza. Ngakho-ke, ukulawula umonakalo wokuqhekeka kwendawo ngesikhathi sokusika kubalulekile ekuthuthukiseni ukwenziwa kwedivayisi ye-SiC.
Izindlela zokusika ze-SiC ezibikiwe njengamanje zifaka phakathi ukusika okuqinile, ukusika okukhululekile, ukusika nge-laser, ukudlulisa ungqimba (ukuhlukaniswa okubandayo), kanye nokusika okuphuma ngogesi. Phakathi kwalokhu, ukusika okuphindwe kabili ngezintambo eziningi nge-fixed diamond abrasives kuyindlela esetshenziswa kakhulu ekucubunguleni amakristalu angawodwa e-SiC. Kodwa-ke, njengoba ubukhulu be-ingot bufinyelela amasentimitha angu-8 nangaphezulu, ukusaha ucingo kwendabuko akuba yinto engasebenzi kahle ngenxa yezidingo eziphezulu zemishini, izindleko, kanye nokusebenza kahle okuphansi. Kunesidingo esiphuthumayo sobuchwepheshe bokusika obungabizi kakhulu, obunokulahlekelwa okuncane, nokusebenza kahle kakhulu.
U: Yiziphi izinzuzo zokusika nge-laser ngaphezu kokusika ngezintambo eziningi zendabuko?
A: Ukusaha ucingo lwendabuko kusikaIngot ye-SiCngendlela ethile ibe yizicucu ezingamakhulu amaningana ubukhulu bama-micron. Izicucu zibe sezigaywa kusetshenziswa ama-slurry edayimane ukususa amamaki esaha kanye nomonakalo ongaphansi komhlaba, kulandelwe ukupholisha kwamakhemikhali (i-CMP) ukuze kufezwe ukuhleleka komhlaba wonke, bese ekugcineni kuhlanzwa ukuze kutholakale ama-wafer e-SiC.
Kodwa-ke, ngenxa yokuqina nobuthakathaka obukhulu be-SiC, lezi zinyathelo zingabangela kalula ukugoba, ukuqhekeka, ukwanda kwamazinga okuphuka, izindleko zokukhiqiza eziphakeme, futhi kuholele ekuqineni okuphezulu kobuso kanye nokungcola (uthuli, amanzi angcolile, njll.). Ngaphezu kwalokho, ukusaha ucingo kuhamba kancane futhi kunesivuno esiphansi. Izilinganiso zibonisa ukuthi ukusika ngezintambo eziningi zendabuko kufinyelela cishe ku-50% wokusetshenziswa kwezinto, futhi kufike ku-75% wezinto ezilahlekile ngemva kokupholisha nokugaya. Idatha yokuqala yokukhiqiza kwamanye amazwe ibonise ukuthi kungathatha cishe izinsuku ezingu-273 zokukhiqiza okuqhubekayo kwamahora angu-24 ukukhiqiza ama-wafer ayi-10,000—okuthatha isikhathi esiningi kakhulu.
Ezweni, izinkampani eziningi zokukhulisa amakristalu e-SiC zigxile ekwandiseni amandla esithando somlilo. Kodwa-ke, esikhundleni sokwandisa umkhiqizo nje, kubaluleke kakhulu ukucabangela indlela yokunciphisa ukulahlekelwa—ikakhulukazi lapho isivuno sokukhula kwamakristalu singakabi ngcono.
Imishini yokusika nge-laser inganciphisa kakhulu ukulahleka kwezinto futhi ithuthukise isivuno. Isibonelo, ukusebenzisa umshini owodwa ongu-20 mmIngot ye-SiC:Ukusaha ngentambo kungaveza cishe ama-wafer angu-30 anobukhulu obungu-350 μm. Ukusikwa nge-laser kungaveza ama-wafer angaphezu kuka-50. Uma ubukhulu be-wafer buncishisiwe bube ngu-200 μm, ama-wafer angaphezu kuka-80 angakhiqizwa nge-ingot efanayo. Ngenkathi ukusaha ngentambo kusetshenziswa kabanzi kuma-wafer angamasentimitha angu-6 noma ngaphansi, ukusaha nge-ingot ye-SiC engamasentimitha angu-8 kungathatha izinsuku ezingu-10-15 ngezindlela zendabuko, ezidinga imishini ephezulu futhi zifaka izindleko eziphezulu ngokusebenza kahle okuphansi. Ngaphansi kwalezi zimo, izinzuzo zokusaha nge-laser ziyacaca, okwenza kube ubuchwepheshe obujwayelekile besikhathi esizayo kuma-wafer angamasentimitha angu-8.
Ngokusika nge-laser, isikhathi sokusika nge-wafer engu-8-intshi singaba ngaphansi kwemizuzu engama-20, kanti ukulahleka kwezinto nge-wafer kungaphansi kwama-60 μm.
Ngamafuphi, uma kuqhathaniswa nokusika ngezintambo eziningi, ukusika nge-laser kunikeza isivinini esiphezulu, isivuno esingcono, ukulahleka kwezinto okuphansi, kanye nokucutshungulwa okuhlanzekile.
Q: Yiziphi izinselele ezinkulu zobuchwepheshe ekusikeni nge-laser ye-SiC?
A: Inqubo yokusikwa nge-laser ihilela izinyathelo ezimbili eziyinhloko: ukuguqulwa nge-laser kanye nokuhlukaniswa kwe-wafer.
Ingqikithi yokuguqulwa kwe-laser ukubumba imisebe kanye nokwenza ngcono amapharamitha. Amapharamitha anjenge-laser power, ububanzi be-spot, kanye nesivinini sokuskena konke kuthinta ikhwalithi yokususwa kwezinto kanye nempumelelo yokuhlukaniswa kwe-wafer okulandelayo. I-geometry yendawo eguquliwe inquma ubulukhuni bomphezulu kanye nobunzima bokuhlukaniswa. Ubulukhuni bomphezulu obuphezulu buyenza ibe nzima ukugaya kamuva futhi bukhulise ukulahleka kwezinto.
Ngemva kokuguqulwa, ukuhlukaniswa kwe-wafer kuvame ukutholakala ngamandla okusika, njengokuphuka okubandayo noma ukucindezeleka komshini. Ezinye izinhlelo zasekhaya zisebenzisa ama-transducer e-ultrasonic ukuze kubangele ukudlidliza kokuhlukanisa, kodwa lokhu kungabangela ukuphazamiseka kwe-chipping kanye ne-edge, kwehlisa isivuno sokugcina.
Nakuba lezi zinyathelo ezimbili zingenzima ngokwemvelo, ukungahambisani kwekhwalithi yekristalu—ngenxa yezinqubo ezahlukene zokukhula, amazinga okusebenzisa izidakamizwa, kanye nokusatshalaliswa kokucindezeleka kwangaphakathi—kuthinta kakhulu ubunzima bokusika, isivuno, kanye nokulahlekelwa kwezinto ezibonakalayo. Ukuhlonza nje izindawo eziyinkinga nokulungisa izindawo zokuskena nge-laser kungase kungayithuthukisi kakhulu imiphumela.
Isihluthulelo sokwamukelwa kabanzi sisekuthuthukiseni izindlela ezintsha kanye nemishini engazivumelanisa nezinhlobo eziningi zekristalu ezivela kubakhiqizi abahlukahlukene, ukuthuthukisa amapharamitha enqubo, kanye nokwakha izinhlelo zokusika nge-laser ezisebenza kuwo wonke umuntu.
Q: Ingabe ubuchwepheshe bokusika nge-laser bungasetshenziswa kwezinye izinto ze-semiconductor ngaphandle kwe-SiC?
A: Ubuchwepheshe bokusika nge-laser busetshenziswe ngokomlando ezintweni eziningi ezahlukene. Kuma-semiconductors, ekuqaleni babusetshenziswa ekuhlukaniseni ama-wafer futhi kusukela lapho sebunwetshwe baba amakristalu amakhulu amakhulu.
Ngale kwe-SiC, ukunqunywa nge-laser kungasetshenziswa nakwezinye izinto eziqinile noma ezibuthakathaka njengedayimane, i-gallium nitride (GaN), kanye ne-gallium oxide (Ga₂O₃). Izifundo zokuqala kulezi zinto zibonise ukuthi kungenzeka yini kanye nezinzuzo zokunqunywa nge-laser kwezicelo ze-semiconductor.
U: Ingabe ikhona imikhiqizo yemishini yokusika nge-laser yasekhaya evuthiwe njengamanje? Ucwaningo lwakho lukusiphi isigaba?
A: Imishini yokusika i-laser ye-SiC enobubanzi obukhulu ibhekwa kabanzi njengemishini eyinhloko yesikhathi esizayo sokukhiqizwa kwe-wafer ye-SiC engamasentimitha angu-8. Njengamanje, yiJapan kuphela engahlinzeka ngezinhlelo ezinjalo, futhi ziyabiza futhi zingaphansi kwemingcele yokuthumela kwamanye amazwe.
Isidingo sasekhaya sezinhlelo zokusika/zokunciphisa nge-laser kulinganiselwa ukuthi singamayunithi angaba yi-1,000, ngokusekelwe ezinhlelweni zokukhiqiza ze-SiC kanye nomthamo wesaha lensimbi elikhona. Izinkampani ezinkulu zasekhaya zitshale imali eningi ekuthuthukisweni, kodwa azikho imishini yasekhaya evuthiwe, etholakala kwezentengiselwano esefinyelele ekusetshenzisweni kwezimboni.
Amaqembu ocwaningo abelokhu ethuthukisa ubuchwepheshe bokuphakamisa i-laser kusukela ngo-2001 futhi manje aselulele lokhu ekusikeni nasekunciphiseni i-laser ye-SiC enobubanzi obukhulu. Athuthukise uhlelo lwe-prototype kanye nezinqubo zokusika ezikwazi ukwenza lokhu: Ukusika nokunciphisa ama-wafer e-SiC angama-intshi angu-4-6 angenawo ugesi Ukusikeka ama-ingots e-SiC angenawo ugesi angama-intshi angu-6-8 angenawo ugesi Ama-benchmarks okusebenza: ama-intshi angu-6-8 angenawo ugesi i-SiC: isikhathi sokusika imizuzu eyi-10-15/i-wafer; ukulahleka kwezinto <30 μm6-8 angenawo ugesi i-SiC: isikhathi sokusika imizuzu eyi-14-20/i-wafer; ukulahleka kwezinto <60 μm
Isivuno esilinganiselwe se-wafer sikhuphuke ngaphezu kuka-50%
Ngemva kokusikwa, ama-wafer ahlangabezana nezindinganiso zikazwelonke ze-geometry ngemva kokugaya nokupholisha. Izifundo zibonisa nokuthi imiphumela yokushisa ebangelwa yi-laser ayithinti kakhulu ukucindezeleka noma i-geometry kuma-wafer.
Imishini efanayo isetshenziswe futhi ukuqinisekisa ukuthi kungenzeka yini ukusika idayimane, i-GaN, kanye ne-Ga₂O₃ amakristalu angawodwa.
Isikhathi sokuthunyelwe: Meyi-23-2025