Isingeniso se-silicon carbide
I-Silicon carbide (SiC) iyinhlanganisela ye-semiconductor material eyakhiwe nge-carbon ne-silicon, okungenye yezinto ezikahle zokwenza izinga lokushisa eliphezulu, imvamisa ephezulu, amandla aphezulu kanye namadivayisi aphezulu kagesi.Uma kuqhathaniswa nezinto ezivamile ze-silicon (Si), igebe lebhande le-silicon carbide liphindwe izikhathi ezingu-3 kune-silicon.I-conductivity eshisayo iphindwe izikhathi ezingu-4-5 kune-silicon;I-voltage yokuwohloka iphindwe izikhathi ezingu-8-10 kune-silicon;Izinga le-electronic saturation drift rate liphindwe izikhathi ezingu-2-3 kune-silicon, ehlangabezana nezidingo zemboni yesimanje yamandla aphezulu, i-voltage ephezulu kanye nemvamisa ephezulu.Isetshenziselwa ikakhulukazi ukukhiqizwa kwezingxenye ze-elekthronikhi ezinesivinini esikhulu, imvamisa ephezulu, amandla aphezulu kanye nezikhipha ukukhanya.Izinkambu zesicelo esingezansi zifaka igridi ehlakaniphile, izimoto zamandla amasha, amandla omoya e-photovoltaic, ukuxhumana kwe-5G, njll. Ama-Silicon carbide diode nama-MOSFET asetshenziselwe ukuthengisa.
Ukumelana nokushisa okuphezulu.Ububanzi be-band gap ye-silicon carbide buphindwe izikhathi ezingu-2-3 kune-silicon, ama-electron akulula ukuguqulwa emazingeni okushisa aphezulu, futhi angakwazi ukumelana namazinga okushisa aphezulu okusebenza, kanye nokushisa okushisayo kwe-silicon carbide izikhathi ezingu-4-5 kune-silicon, ukwenza ukukhishwa kokushisa kwedivayisi kube lula kanye nomkhawulo wokushisa wokusebenza uphakeme.Ukumelana nezinga lokushisa eliphezulu kungakhuphula kakhulu ukuminyana kwamandla ngenkathi kunciphisa izidingo kusistimu yokupholisa, okwenza itheminali ibe lula futhi ibe ncane.
Melana nengcindezi ephezulu.Amandla ensimu kagesi ephukile ye-silicon carbide aphindwe ka-10 kune-silicon, ekwazi ukumelana nama-voltage aphezulu futhi ifaneleka kakhulu kumadivayisi asebenzisa amandla kagesi aphezulu.
Ukumelana nemvamisa ephezulu.I-Silicon carbide inesilinganiso sokukhukhuleka se-electron esigcwele esiphindwe kabili kune-silicon, okuholela ekungabibikho komsila wamanje phakathi nenqubo yokuvala shaqa, okungathuthukisa ngempumelelo imvamisa yokushintsha idivayisi futhi ibone ukwenziwa kancane kwedivayisi.
Ukulahlekelwa amandla aphansi.Uma kuqhathaniswa nezinto ze-silicon, i-silicon carbide inokumelana okuphansi kakhulu nokulahlekelwa okuphansi.Ngasikhathi sinye, ububanzi be-band-gap ephezulu ye-silicon carbide kunciphisa kakhulu ukuvuza kwamanje nokulahleka kwamandla.Ngaphezu kwalokho, idivayisi ye-silicon carbide ayinayo into yamanje yokulandela ngesikhathi sokuvala, futhi ukulahlekelwa kokushintsha kuphansi.
I-Silicon carbide industry chain
Ihlanganisa ikakhulukazi i-substrate, i-epitaxy, idizayini yedivayisi, ukukhiqiza, ukuvala uphawu nokunye.I-Silicon carbide esuka ezintweni ezibonakalayo kuya kudivayisi yamandla e-semiconductor izobhekana nokukhula kwekristalu eyodwa, ukusika ingot, ukukhula kwe-epitaxial, ukwakheka kwe-wafer, ukukhiqiza, ukupakisha nezinye izinqubo.Ngemuva kokuhlanganiswa kwe-silicon carbide powder, i-silicon carbide ingot yenziwa kuqala, bese i-silicon carbide substrate itholakala ngokusika, ukugaya nokupholisha, futhi ishidi le-epitaxial litholakala ngokukhula kwe-epitaxial.I-wafer ye-epitaxial yenziwe nge-silicon carbide ngokusebenzisa i-lithography, i-etching, i-ion implantation, i-metal passivation nezinye izinqubo, i-wafer iyasikwa ibe yifa, idivayisi iyapakishwa, futhi idivayisi ihlanganiswa ibe igobolondo elikhethekile futhi ihlanganiswe ibe module.
Phezulu kochungechunge 1 lwemboni: i-substrate - ukukhula kwekristalu isixhumanisi senqubo eyinhloko
I-Silicon carbide substrate ibalelwa ku-47% wezindleko zamadivayisi e-silicon carbide, izithiyo zobuchwepheshe zokukhiqiza eziphakeme kakhulu, inani elikhulu kunawo wonke, iwumgogodla wezimboni ezinkulu zesikhathi esizayo ze-SiC.
Ngokombono womehluko wezakhiwo ze-electrochemical, izinto ze-silicon carbide substrate zingahlukaniswa zibe ama-conductive substrates (isifunda se-resistivity 15~30mΩ·cm) kanye nama-semi-insulated substrates (ukumelana nokuphezulu kuno-105Ω·cm).Lezi zinhlobo ezimbili zama-substrates zisetshenziselwa ukwakha amadivaysi ahlukene njengamadivayisi kagesi namadivaysi efrikhwensi yomsakazo ngokulandelana kwawo ngemva kokukhula kwe-epitaxial.Phakathi kwazo, i-semi-insulated silicon carbide substrate isetshenziswa ikakhulukazi ekwenzeni amadivayisi we-gallium nitride RF, amadivaysi e-photoelectric nokunye.Ngokukhulisa ungqimba lwe-gan epitaxial ku-semi-insulated SIC substrate, ipuleti le-sic epitaxial liyalungiswa, elingase lilungiswe libe kumadivayisi we-HEMT gan iso-nitride RF.I-conductive silicon carbide substrate isetshenziswa kakhulu ekwenzeni amadivaysi amandla.Ngokungafani nenqubo yendabuko yokukhiqiza idivayisi yamandla e-silicon, idivayisi yamandla ye-silicon carbide ayikwazi ukwenziwa ngokuqondile ku-silicon carbide substrate, ungqimba we-silicon carbide epitaxial udinga ukukhuliswa ku-conductive substrate ukuze uthole ishidi le-silicon carbide epitaxial, kanye ne-epitaxial. ungqimba lwakhiwe ku-Schottky diode, MOSFET, IGBT namanye amadivayisi kagesi.
I-silicon carbide powder yahlanganiswa kusukela ekuhlanzekeni okuphezulu kwe-carbon powder kanye nokuhlanzeka okuphezulu kwe-silicon powder, futhi osayizi abahlukene be-silicon carbide ingot bakhuliswa ngaphansi kwenkambu yokushisa ekhethekile, kwase kuthi i-silicon carbide substrate yakhiqizwa ngezinqubo eziningi zokucubungula.Inqubo eyinhloko ihlanganisa:
I-Raw material synthesis: I-high-purity silicon powder + toner ixubene ngokwefomula, futhi ukusabela kwenziwa ekamelweni lokusabela ngaphansi kwezimo zokushisa eziphakeme ezingaphezu kuka-2000 ° C ukuze kuhlanganiswe izinhlayiya ze-silicon carbide ngohlobo oluthile lwekristalu nezinhlayiya. usayizi.Bese ngokusebenzisa ukuchotshozwa, ukuhlolwa, ukuhlanza nezinye izinqubo, ukuhlangabezana nezidingo zokuhlanzeka okuphezulu kwe-silicon carbide powder izinto zokusetshenziswa.
Ukukhula kwekristalu kuyinqubo ewumgogodla wokwenziwa kwe-silicon carbide substrate, enquma izakhiwo zikagesi ze-silicon carbide substrate.Njengamanje, izindlela eziyinhloko zokukhula kwekristalu ukudluliswa komhwamuko obonakalayo (PVT), izinga lokushisa eliphakeme lokubeka umhwamuko wamakhemikhali (HT-CVD) kanye ne-liquid phase epitaxy (LPE).Phakathi kwazo, indlela ye-PVT iyindlela evamile yokukhula kwezentengiselwano ye-SiC substrate okwamanje, ngokuvuthwa okuphezulu kakhulu kwezobuchwepheshe kanye nesetshenziswa kakhulu kwezobunjiniyela.
Ukulungiswa kwe-substrate ye-SiC kunzima, okuholela entengo yayo ephezulu
Ukulawula izinga lokushisa kunzima: Ukukhula kwe-Si crystal rod kudinga kuphela i-1500 ℃, kuyilapho i-SiC crystal rod idinga ukukhuliswa ezingeni lokushisa eliphezulu elingaphezu kuka-2000 ℃, futhi kunama-isomers we-SiC angaphezu kuka-250, kodwa isakhiwo esiyinhloko se-crystal ye-4H-SiC ukukhiqizwa kwemishini yamandla, uma kungenjalo ukulawula okunembile, kuzothola ezinye izakhiwo zekristalu.Ngaphezu kwalokho, izinga lokushisa ku-crucible linquma izinga lokudluliswa kwe-SiC sublimation kanye nemodi yokuhlela nokukhula kwama-athomu egesi ku-crystal interface, ethinta izinga lokukhula kwekristalu nekhwalithi yekristalu, ngakho-ke kuyadingeka ukwakha insimu yokushisa ehlelekile. ukulawula ubuchwepheshe.Uma kuqhathaniswa nezinto zokwakha ze-Si, umehluko ekukhiqizeni kwe-SiC futhi usezinkambisweni zokushisa okuphezulu njengokufakwa kwe-ion yokushisa ephezulu, i-oxidation yokushisa ephezulu, ukusebenza kokushisa okuphezulu, kanye nenqubo ye-mask enzima edingwa yilezi zinqubo zokushisa okuphezulu.
Ukukhula kancane kwekristalu: izinga lokukhula kwe-Si crystal rod lingafinyelela ku-30 ~ 150mm/h, futhi ukukhiqizwa kwe-1-3m silicon crystal rod kuthatha cishe usuku olulodwa kuphela;I-SiC crystal rod enendlela ye-PVT njengesibonelo, izinga lokukhula limayelana no-0.2-0.4mm/h, izinsuku ezingu-7 ukukhula ngaphansi kuka-3-6cm, izinga lokukhula lingaphansi kwe-1% yezinto ze-silicon, umthamo wokukhiqiza ukhulu kakhulu. okulinganiselwe.
Imingcele yomkhiqizo ophezulu kanye nesivuno esincane: imingcele eyinhloko ye-substrate ye-SiC ihlanganisa ukuminyana kwe-microtubule, ukuminyana kwe-dislocation, resistivity, i-warpage, i-surface roughness, njll. Kuwubunjiniyela besistimu obuyinkimbinkimbi ukuhlela ama-athomu ekamelweni elivaliwe lokushisa eliphezulu kanye nokukhula okuphelele kwekristalu, ngenkathi ilawula izinkomba zepharamitha.
Impahla inobunzima obukhulu, i-brittleness ephezulu, isikhathi eside sokusika nokugqoka okuphezulu: Ukuqina kwe-SiC Mohs ye-9.25 kungokwesibili kwedayimane, okuholela ekwandeni okuphawulekayo kobunzima bokusika, ukugaya nokupholisha, futhi kuthatha cishe amahora angu-120 sika izingcezu ezingu-35-40 zengot engu-3cm enogqinsi.Ngaphezu kwalokho, ngenxa yokuqina okuphezulu kwe-SiC, ukugqokwa kwe-wafer processing kuzoba ngaphezulu, futhi isilinganiso sokuphumayo singaba ngu-60% kuphela.
Umkhuba wokuthuthuka: Ukwenyuka kosayizi + ukwehla kwentengo
Imakethe yomhlaba wonke yeSiC ulayini wokukhiqiza umthamo wamayintshi angu-6 uyakhula, futhi izinkampani ezihamba phambili sezingene emakethe engama-intshi angu-8.Amaphrojekthi okuthuthukiswa kwasekhaya ikakhulukazi ama-intshi angu-6.Njengamanje, nakuba izinkampani eziningi ezifuywayo zisasekelwe emigqeni yokukhiqiza engu-4-intshi, kodwa imboni ikhula kancane kancane ibe yi-intshi engu-6, ngokuvuthwa kobuchwepheshe bemishini yokusekela engu-6-intshi, ubuchwepheshe basekhaya be-SiC substrate buthuthukisa kancane kancane umnotho wezwe. Isikali semigqa yokukhiqiza yosayizi omkhulu sizoboniswa, futhi igebe lamanje lesikhathi sokukhiqiza ngobuningi elingama-intshi angu-6 selinciphile lafinyelela eminyakeni engu-7.Usayizi we-wafer omkhulu ungaletha ukwanda kwenani lama-chips angawodwa, uthuthukise izinga lokukhiqiza, futhi unciphise ingxenye yama-chips onqenqemeni, futhi izindleko zocwaningo nokuthuthukiswa kanye nokulahlekelwa kwesivuno zizogcinwa cishe ngo-7%, ngaleyo ndlela kuthuthukiswe i-wafer. ukusetshenziswa.
Kusenobunzima obuningi ekwakhiweni kwedivayisi
Ukuthengiswa kwe-SiC diode kuyathuthukiswa kancane kancane, okwamanje, inani labakhiqizi basekhaya baklame imikhiqizo ye-SiC SBD, imikhiqizo ye-SiC SBD yamandla aphakathi nendawo aphezulu inozinzo oluhle, emotweni ye-OBC, ukusetshenziswa kwe-SiC SBD+SI IGBT ukuze kuzuzwe ukuzinza. ukuminyana kwamanje.Njengamanje, azikho izithiyo ekwakhiweni kwelungelo lobunikazi kwemikhiqizo ye-SiC SBD e-China, futhi igebe emazweni angaphandle lincane.
I-SiC MOS isenobunzima obuningi, lisekhona igebe phakathi kwe-SiC MOS nabakhiqizi baphesheya kwezilwandle, futhi inkundla yokukhiqiza efanele isakhiwa.Njengamanje, i-ST, i-Infineon, i-Rohm kanye nenye i-600-1700V SiC MOS izuze ukukhiqizwa ngobuningi futhi yasayinwa futhi yathunyelwa nezimboni eziningi zokukhiqiza, kuyilapho umklamo wamanje we-SiC MOS wasekhaya usuqediwe ngokuyisisekelo, abakhiqizi abaningi bemiklamo basebenza ngezindwangu. isigaba sokugeleza kwe-wafer, futhi kamuva ukuqinisekiswa kwekhasimende kusadinga isikhathi esithile, ngakho-ke sisenesikhathi eside kusukela ekuthengiseni ngezinga elikhulu.
Njengamanje, ukwakheka kwepulani kuyisinqumo esivamile, futhi uhlobo lomsele lusetshenziswa kakhulu emkhakheni wengcindezi ephezulu esikhathini esizayo.Isakhiwo se-Planar SiC MOS abakhiqizi abaningi, isakhiwo se-planar akulula ukukhiqiza izinkinga zokuwohloka kwendawo uma kuqhathaniswa ne-groove, ethinta ukuzinza komsebenzi, emakethe engaphansi kwe-1200V inenani elibanzi lenani lesicelo, futhi isakhiwo sepulani silinganiselwe. elula ekugcineni yokukhiqiza, ukuhlangabezana nokwenziwa kanye nokulawula izindleko izici ezimbili.Idivayisi ye-groove inezinzuzo ze-inductance ye-parasitic ephansi kakhulu, isivinini sokushintsha ngokushesha, ukulahlekelwa okuphansi nokusebenza okuphezulu uma kuqhathaniswa.
2--SiC wafer izindaba
Ukukhiqizwa kwemakethe ye-silicon carbide kanye nokukhula kokuthengisa, naka ukungalingani kwesakhiwo phakathi kokunikezwa kanye nesidingo
Ngokukhula okusheshayo kwesidingo semakethe yama-electronics ahamba ngamaza kanye namandla aphezulu, umkhawulo ongokomzimba wemishini ye-semiconductor esekwe ku-silicon uye wabonakala kancane kancane, futhi izinto ze-semiconductor yesizukulwane sesithathu ezimelwe yi-silicon carbide (SiC) ziye kancane kancane. abe yizimboni.Ngokombono wokusebenza kwezinto ezibonakalayo, i-silicon carbide ine-silicon carbide izikhathi ezi-3 ububanzi begebe lebhande le-silicon, izikhathi ezingu-10 ukuwohloka okubucayi kwamandla kagesi, izikhathi ezi-3 ukuqhutshwa kwe-thermal, ngakho-ke amadivayisi wamandla we-silicon carbide afanele imvamisa ephezulu, ukucindezela okuphezulu, izinga lokushisa eliphezulu nezinye izinhlelo zokusebenza, zisiza ukuthuthukisa ukusebenza kahle kanye nokuminyana kwamandla wezinhlelo zikagesi zamandla.
Njengamanje, ama-SiC diode nama-SiC MOSFET athuthela kancane kancane emakethe, futhi kunemikhiqizo evuthiwe eyengeziwe, phakathi kwayo ama-SiC diode asetshenziswa kakhulu esikhundleni se-silicon-based diode kweminye imikhakha ngenxa yokuthi ayinayo inzuzo yokukhokhiswa kokuhlehlisa kabusha;I-SiC MOSFET iphinde isetshenziswe kancane kancane kwezezimoto, ukugcinwa kwamandla, inqwaba yokushaja, i-photovoltaic nezinye izinkambu;Emkhakheni wezicelo zezimoto, inkambiso ye-modularization iya ngokuya igqama, ukusebenza okuphezulu kwe-SiC kudinga ukuncika ezinqubweni zokupakisha ezithuthukisiwe ukuze kuzuzwe, ngokobuchwepheshe ngokufakwa uphawu kwegobolondo okuvuthiwe njengokujwayelekile, ikusasa noma ekuthuthukisweni kokufakwa uphawu kwepulasitiki. , izici zayo zokuthuthuka ezenziwe ngokwezifiso zifaneleka kakhulu kumamojula we-SiC.
Ijubane lentengo ye-silicon carbide liyancipha noma ngaphezu komcabango
Ukusetshenziswa kwamadivayisi we-silicon carbide kunqunyelwe kakhulu izindleko eziphakeme, intengo ye-SiC MOSFET ngaphansi kwezinga elifanayo iphakeme izikhathi ezi-4 kune-Si based IGBT, lokhu kungenxa yokuthi inqubo ye-silicon carbide iyinkimbinkimbi, lapho ukukhula I-crystal eyodwa ne-epitaxial ayigcini nje ngokuhlukumeza imvelo, kodwa futhi izinga lokukhula lihamba kancane, futhi ukucubungula kwe-crystal eyodwa ku-substrate kumele kudlule inqubo yokusika nokupholisha.Ngokusekelwe ezicini zayo ezibonakalayo kanye nobuchwepheshe bokucubungula okungavuthiwe, isivuno se-substrate yasekhaya singaphansi kwama-50%, futhi izici ezihlukahlukene ziholela emananini aphezulu e-substrate kanye ne-epitaxial.
Kodwa-ke, ukwakheka kwezindleko zamadivayisi e-silicon carbide namadivayisi asekelwe ku-silicon kuphambene kakhulu, izindleko ze-substrate kanye ne-epitaxial ye-akhawunti yesiteshi sangaphambili ngama-47% no-23% wayo yonke idivayisi ngokulandelanayo, isamba esingaba ngu-70%, umklamo wedivayisi, ukukhiqiza. kanye nezixhumanisi zokuvala ze-akhawunti yesiteshi esingemuva ngama-30% kuphela, izindleko zokukhiqizwa kwamadivayisi asekelwe ku-silicon zigxile kakhulu ekukhiqizeni i-wafer yesiteshi sangemuva cishe u-50%, kanti izindleko ze-substrate zibiza u-7% kuphela.Isimo senani le-silicon carbide industry sibheke phansi sisho ukuthi abakhiqizi be-epitaxy ye-upstream substrate banelungelo eliyinhloko lokukhuluma, okuwukhiye wesakhiwo samabhizinisi asekhaya nawangaphandle.
Ngokombono oguquguqukayo emakethe, ukunciphisa izindleko ze-silicon carbide, ngaphezu kokuthuthukisa inqubo ye-silicon carbide ende ye-crystal kanye ne-slicing, ukukhulisa usayizi we-wafer, okubuye kube yindlela evuthiwe yokuthuthukiswa kwe-semiconductor esikhathini esidlule, Idatha ye-Wolfspeed ibonisa ukuthi ukuthuthukiswa kwe-silicon carbide substrate kusuka ku-6 amayintshi kuya ku-8 amayintshi, ukukhiqizwa kwe-chip efanelekayo kungakhula ngo-80% -90%, futhi kusize ukuthuthukisa isivuno.Inganciphisa izindleko zeyunithi ehlanganisiwe ngo-50%.
I-2023 yaziwa ngokuthi "unyaka wokuqala we-8-inch SiC", kulo nyaka, abakhiqizi be-silicon carbide basekhaya nabangaphandle basheshisa ukwakheka kwe-silicon carbide engu-8-intshi, njengokutshalwa kwezimali okuhlanya kweWolfspeed kwama-dollar ayizigidi eziyizinkulungwane eziyi-14.55 ukuze kwandiswe ukukhiqizwa kwe-silicon carbide, ingxenye ebalulekile okuwukwakhiwa kwemboni yokukhiqiza i-SiC substrate engama-intshi angu-8, Ukuqinisekisa ukuhlinzekwa kwesikhathi esizayo kwensimbi engenalutho engu-200 mm SiC ezinkampanini eziningi;I-Domestic Tianyue Advanced kanye no-Tianke Heda nabo basayine izivumelwano zesikhathi eside ne-Infineon zokuhlinzeka ngama-8-inch silicon carbide substrates esikhathini esizayo.
Kusukela kulo nyaka, i-silicon carbide izokhula ngesivinini isuka ku-6 amayintshi iye ku-8 amayintshi, iWolfspeed ilindele ukuthi ngo-2024, izindleko zeyunithi ye-chip engu-8 amayintshi substrate uma kuqhathaniswa nezindleko zeyunithi ye-chip yama-intshi angu-6 ngo-2022 zizoncishiswa ngaphezu kuka-60%. , futhi ukwehla kwezindleko kuzovula futhi imakethe yezicelo, idatha yocwaningo lwe-Ji Bond Consulting ikhombe.Isabelo semakethe samanje semikhiqizo engama-intshi angu-8 singaphansi kuka-2%, kanti isabelo semakethe kulindeleke ukuthi sikhule sifinyelele cishe ku-15% ngo-2026.
Eqinisweni, izinga lokwehla kwenani le-silicon carbide substrate lingase lidlule umcabango wabantu abaningi, ukunikezwa kwemakethe kwamanje kwe-substrate engu-6-intshi kungu-4000-5000 yuan/piece, uma kuqhathaniswa nokuqala konyaka kwehle kakhulu. okulindeleke ukuba ziwe ngaphansi kwama-yuan angu-4000 ngonyaka ozayo, kuyaphawuleka ukuthi abanye abakhiqizi ukuze bathole imakethe yokuqala, baye banciphisa intengo yokuthengisa emgqeni wezindleko ngezansi, Wavula imodeli yempi yamanani, ikakhulukazi egxile ku-silicon carbide substrate. ukunikezwa bekwanele uma kuqhathaniswa endimeni ye-low-voltage, abakhiqizi basekhaya nabangaphandle bakhulisa ngamandla umthamo wokukhiqiza, noma bavumele isiteji se-silicon carbide substrate sigcwale ngaphambi kwalokho obekucatshangwa.
Isikhathi sokuthumela: Jan-19-2024