Amakristalu angawodwa awavamile ngokwemvelo, futhi noma evele, avame ukuba mancane kakhulu—ngokuvamile esikalini samamilimitha (mm)—futhi kunzima ukuwathola. Amadayimane abikiwe, ama-emerald, ama-agates, njll., ngokuvamile awangeni emakethe, ingasaphathwa eyokusetshenziswa kwezimboni; iningi lawo liboniswa eminyuziyamu ukuze kuboniswe. Kodwa-ke, amanye amakristalu angawodwa anenani elikhulu lezimboni, njenge-silicon yekristalu eyodwa embonini yesekethe ehlanganisiwe, i-sapphire evame ukusetshenziswa kuma-lens optical, kanye ne-silicon carbide, ethola amandla kuma-semiconductors esizukulwane sesithathu. Amandla okukhiqiza la makristalu angawodwa ngobuningi embonini awameli nje kuphela amandla kwezobuchwepheshe bezimboni nesayensi kodwa futhi ayisibonakaliso sengcebo. Isidingo esiyinhloko sokukhiqizwa kwekristalu elilodwa embonini usayizi omkhulu, njengoba lokhu kuyisihluthulelo sokunciphisa izindleko ngempumelelo. Ngezansi kunezinye amakristalu angawodwa avame ukutholakala emakethe:
1. Ikristalu Elilodwa Lesafire
Ikristalu elilodwa le-sapphi libhekisela ku-α-Al₂O₃, enesistimu yekristalu enezinhlangothi eziyisithupha, ubulukhuni be-Mohs obungu-9, kanye nezakhiwo zamakhemikhali ezizinzile. Ayincibiliki koketshezi olune-acidic noma lwe-alkaline olubolayo, imelana namazinga okushisa aphezulu, futhi ikhombisa ukuhanjiswa kokukhanya okuhle kakhulu, ukuhanjiswa kokushisa, kanye nokufakwa kokushisa kagesi.
Uma ama-ion e-Al ku-crystal ethathelwa indawo ama-ion e-Ti ne-Fe, i-crystal ibonakala iluhlaza okwesibhakabhaka futhi ibizwa ngokuthi i-sapphire. Uma ithathelwa indawo ama-ion e-Cr, ibonakala ibomvu futhi ibizwa ngokuthi i-ruby. Kodwa-ke, i-sapphire yezimboni iyi-α-Al₂O₃ emsulwa, ayinambala futhi isobala, ayinazo izingcola.
I-sapphire yezimboni ivame ukuba nesimo sama-wafer, ubukhulu obungu-400–700 μm kanye nobubanzi obungu-4–8 amayintshi. Lawa aziwa ngokuthi ama-wafer futhi asikwa ngama-ingot ekristalu. Okuboniswe ngezansi yi-ingot esanda kukhishwa evela esithandweni sekristalu esisodwa, engakapholishwa noma engakanqunywa.
Ngo-2018, iJinghui Electronic Company e-Inner Mongolia yakhulisa ngempumelelo ikristalu yesafire enkulu kunazo zonke emhlabeni enobukhulu obungu-450 kg. Ikristalu yesafire enkulu kunazo zonke emhlabeni wonke yayiyikristalu engu-350 kg ekhiqizwa eRussia. Njengoba kuboniswe esithombeni, le kristalu inesimo esijwayelekile, icacile ngokuphelele, ayinamifantu nemingcele yokusanhlamvu, futhi inamabhamuza ambalwa.
2. I-Silicon Enekristalu Elilodwa
Njengamanje, i-silicon enekristalu elilodwa esetshenziselwa ama-chip e-integrated circuit ihlanzekile kusukela ku-99.999999% kuya ku-99.99999999% (9–11 nines), kanti i-silicon ingot engu-420 kg kumele igcine isakhiwo esiphelele njengedayimane. Emvelweni, ngisho nedayimane ene-carat eyodwa (200 mg) ayivamile.
Ukukhiqizwa komhlaba wonke kwama-ingot e-silicon angama-single-crystal kuphethwe yizinkampani ezinhlanu ezinkulu: i-Shin-Etsu yaseJapan (28.0%), i-SUMCO yaseJapan (21.9%), i-GlobalWafers yaseTaiwan (15.1%), i-SK Siltron yaseNingizimu Korea (11.6%), kanye ne-Siltronic yaseJalimane (11.3%). Ngisho nomkhiqizi we-wafer we-semiconductor omkhulu kunabo bonke e-China, i-NSIG, uphethe cishe u-2.3% wesabelo semakethe. Noma kunjalo, njengentsha, amandla ayo akufanele athathwe kancane. Ngo-2024, i-NSIG ihlela ukutshala imali kuphrojekthi yokuthuthukisa ukukhiqizwa kwe-wafer ye-silicon engu-300 mm yamasekethe ahlanganisiwe, ngokutshalwa kwezimali okulinganiselwa ku-¥13.2 billion.
Njengezinto zokusetshenziswa zama-chips, ama-ingot e-silicon angama-single-crystal ahlanzekile kakhulu ashintsha kusuka kuma-diameter angu-6 kuya kwangu-12 intshi. Izindawo zokusekela ama-chip ezihamba phambili zamazwe ngamazwe, njenge-TSMC kanye ne-GlobalFoundries, zenza ama-chips avela kuma-wafer e-silicon angu-12 intshi abe yimakethe eyinhloko, kuyilapho ama-wafer angu-8 intshi esuswa kancane kancane. I-SMIC ehamba phambili yasekhaya isasebenzisa kakhulu ama-wafer angu-6 intshi. Njengamanje, yi-SUMCO yaseJapan kuphela engakhiqiza ama-wafer substrates ahlanzekile kakhulu angu-12 intshi.
3. I-Gallium Arsenide
Ama-wafer e-Gallium arsenide (GaAs) ayizinto ezibalulekile ze-semiconductor, futhi ubukhulu bawo buyipharamitha ebalulekile enqubweni yokulungiselela.
Njengamanje, ama-wafer e-GaAs avame ukukhiqizwa ngobukhulu obungamasentimitha angu-2, amasentimitha angu-3, amasentimitha angu-4, amasentimitha angu-6, amasentimitha angu-8, namasentimitha angu-12. Phakathi kwalawa, ama-wafer angu-6-intshi angenye yezindlela ezisetshenziswa kakhulu.
Ububanzi obukhulu bamakristalu angawodwa akhuliswe ngendlela ye-Horizontal Bridgman (HB) ngokuvamile bungamasentimitha angu-3, kuyilapho indlela ye-Liquid-Encapsulated Czochralski (LEC) ingakhiqiza amakristalu angawodwa afinyelela kumasentimitha angu-12 ububanzi. Kodwa-ke, ukukhula kwe-LEC kudinga izindleko eziphezulu zemishini futhi kuveza amakristalu angalingani futhi angenawo ubuningi obukhulu bokuhlukaniswa. Izindlela ze-Vertical Gradient Freeze (VGF) kanye ne-Vertical Bridgman (VB) okwamanje zingakhiqiza amakristalu angawodwa afinyelela kumasentimitha angu-8 ububanzi, ngesakhiwo esifanayo kanye nobuningi obuphansi bokuhlukaniswa.
Ubuchwepheshe bokukhiqiza ama-wafer acwebezelayo e-GaAs angamasentimitha angu-4 no-6 busetshenziswa kakhulu yizinkampani ezintathu: i-Sumitomo Electric Industries yaseJapan, i-Freiberger Compound Materials yaseJalimane, kanye ne-AXT yase-US. Ngo-2015, ama-substrate angamasentimitha angu-6 asevele ebalelwa ngaphezu kuka-90% wesabelo semakethe.
Ngo-2019, imakethe yomhlaba wonke ye-GaAs substrate yayibuswa yiFreiberger, iSumitomo, kanye neBeijing Tongmei, enamasheya emakethe angu-28%, 21%, kanye no-13%, ngokulandelana. Ngokusho kwezilinganiso zenkampani elulekayo iYole, ukuthengiswa komhlaba wonke kwe-GaAs substrate (okuguqulwe kwaba yi-2-inch equivalent) kufinyelele cishe ezingcezu eziyizigidi ezingama-20 ngo-2019 futhi kulindeleke ukuthi kudlule izingcezu eziyizigidi ezingama-35 ngo-2025. Imakethe yomhlaba wonke ye-GaAs substrate yayilinganiselwa cishe ku-$200 million ngo-2019 futhi kulindeleke ukuthi ifinyelele ku-$348 million ngo-2025, ngesilinganiso sokukhula sonyaka esihlanganisiwe (CAGR) esingu-9.67% kusukela ngo-2019 kuya ku-2025.
4. I-Silicon Carbide Single Crystal
Njengamanje, imakethe ingakusekela ngokugcwele ukukhula kwamakristalu angama-2-intshi nama-3-intshi ububanzi be-silicon carbide (SiC) angawodwa. Izinkampani eziningi zibike ukukhula okuphumelelayo kwamakristalu angama-4-intshi angama-4H-type SiC angawodwa, okuphawula ukuphumelela kweShayina emazingeni asezingeni lomhlaba kubuchwepheshe bokukhula kwamakristalu e-SiC. Kodwa-ke, kusenegebe elikhulu ngaphambi kokuthengiswa.
Ngokuvamile, ama-SiC ingot akhuliswe ngezindlela ze-liquid-phase mancane kakhulu, anobukhulu obungangesentimitha. Lokhu futhi kuyimbangela yezindleko eziphezulu zama-SiC wafers.
I-XKH igxile ekucwaningweni nasekuthuthukisweni kwezinto ze-semiconductor eziyinhloko, okuhlanganisa i-saphire, i-silicon carbide (SiC), ama-silicon wafers, kanye ne-ceramics, emboza uchungechunge oluphelele lwenani kusukela ekukhuleni kwekristalu kuya ekusetshenzisweni kokunemba. Sisebenzisa amakhono ezimboni ahlanganisiwe, sinikeza ama-sapphire wafers asebenza kahle kakhulu, ama-silicon carbide substrates, kanye nama-silicon wafers ahlanzekile kakhulu, asekelwa izixazululo ezenzelwe wena njengokusika ngokwezifiso, ukumbozwa kwendawo, kanye nokwakhiwa kwe-geometry okuyinkimbinkimbi ukuze kuhlangatshezwane nezidingo zemvelo ezinkulu ezinhlelweni ze-laser, ukwakhiwa kwe-semiconductor, kanye nezicelo zamandla avuselelekayo.
Ngokunamathela ezindinganisweni zekhwalithi, imikhiqizo yethu ifaka ukunemba kwezinga le-micron, ukuqina kokushisa okungaphezulu kuka-1500°C, kanye nokumelana nokugqwala okuphezulu, okuqinisekisa ukuthembeka ezimweni zokusebenza ezinzima. Ngaphezu kwalokho, sihlinzeka ngezingxenye ze-quartz, izinto zensimbi/ezingezona ezensimbi, kanye nezinye izingxenye ze-semiconductor-grade, okuvumela ukuguquka okungenamthungo kusuka ekukhiqizeni izinto ezincane kuya ekukhiqizweni okukhulu kumakhasimende kuyo yonke imboni.
Isikhathi sokuthunyelwe: Agasti-29-2025