Amakristalu awodwa awavamile emvelweni, futhi ngisho nalapho eyenzeka, ngokuvamile mancane kakhulu—imvamisa esikalini esiyimilimitha (mm)—futhi kunzima ukuwathola. Amadayimane abikiwe, ama-emeralds, ama-agate, njll., ngokuvamile awangeni emakethe, ingasaphathwa eyezimboni; eziningi zikhonjiswa eminyuziyamu ukuze zibukiswe. Kodwa-ke, amanye amakristalu awodwa abamba inani elibalulekile lezimboni, njenge-silicon yekristalu eyodwa embonini yesekethe edidiyelwe, isafire evame ukusetshenziswa kumalensi optical, kanye ne-silicon carbide, ethola umfutho kuma-semiconductors esizukulwane sesithathu. Ikhono lokukhiqiza ngobuningi lawa makristalu angawodwa ngokwezimboni alimeli nje kuphela amandla kubuchwepheshe bezimboni nesayensi kodwa liwuphawu lomcebo. Isidingo esiyinhloko sokukhiqizwa kwekristalu eyodwa embonini ubukhulu obukhulu, njengoba lokhu kuyisihluthulelo sokunciphisa izindleko ngokuphumelelayo. Ngezansi kukhona amakristalu awodwa ajwayele ukuhlangana nawo emakethe:
1. I-Sapphire Single Crystal
I-Sapphire single crystal ibhekisela ku-α-Al₂O₃, enesistimu yekristalu enezinhlangothi ezine, ubulukhuni be-Mohs obungu-9, kanye nezakhiwo zamakhemikhali ezizinzile. Ayincibiliki oketshezini olune-asidi noma oluyi-alkaline ebolayo, imelana namazinga okushisa aphezulu, futhi ibonisa ukudluliswa kokukhanya okuhle kakhulu, ukuguquguquka kwe-thermal, nokufakwa kukagesi.
Uma i-Al ions ku-crystal ithathelwa indawo yi-Ti ne-Fe ion, ikristalu ibonakala iluhlaza okwesibhakabhaka futhi ibizwa ngokuthi isafire. Uma ithathelwa indawo yi-Cr ions, ibonakala ibomvu futhi ibizwa ngokuthi i-ruby. Nokho, isafire yezimboni iyi-α-Al₂O₃ emsulwa, ayinambala futhi isobala, ngaphandle kokungcola.
Isafire yezimboni ngokuvamile ithatha uhlobo lwamawafa, ugqinsi luka-400–700 μm kanye namayintshi angu-4–8 ububanzi. Lezi zaziwa ngokuthi ama-wafers futhi zisikwa kuma-crystal ingots. Kuboniswe ngezansi ingot esanda kudonswa esithandweni somlilo sekristalu esisodwa, esingakapholishwa noma esisikiwe.
Ngo-2018, i-Jinghui Electronic Company e-Inner Mongolia ikhulise ngempumelelo ikristalu yesafire enkulukazi engu-450 kg. Ikristalu yesafire enkulu kunazo zonke emhlabeni wonke yayiyikristalu engu-350 kg ekhiqizwa eRussia. Njengoba kuboniswe esithombeni, le crystal inesimo esivamile, isobala ngokugcwele, ayinamifantu nemingcele yokusanhlamvu, futhi inamabhamuza ambalwa.
2. I-Silicon-Crystal eyodwa
Njengamanje, i-silicon eyodwa-crystal esetshenziselwa ama-chips wesekethe ahlanganisiwe inobumsulwa obusuka ku-99.9999999% kuya ku-99.999999999% (9-11 nines), kanye ne-silicon ingot engu-420 kg kufanele igcine isakhiwo esiphelele njengedayimane. Emvelweni, ngisho nedayimane elilodwa (200 mg) liyivelakancane.
Ukukhiqizwa komhlaba wonke kwe-single-crystal silicon ingots kuphethwe izinkampani ezinkulu ezinhlanu: i-Shin-Etsu yaseJapane (28.0%), i-SUMCO yaseJapane (21.9%), i-GlobalWafers yaseTaiwan (15.1%), i-SK Siltron yaseNingizimu Korea (11.6%), ne-Siltronic yaseJalimane (11.3%). Ngisho nomkhiqizi we-semiconductor wafer omkhulu kunawo wonke ezweni lase-China, i-NSIG, iphethe cishe u-2.3% kuphela wesabelo semakethe. Noma kunjalo, njengomuntu osanda kufika, amandla ayo akufanele athathwe kancane. Ngo-2024, i-NSIG ihlela ukutshala imali kuphrojekthi yokuthuthukisa ukukhiqizwa kwe-silicon wafer engu-300 mm kumasekethe ahlanganisiwe, ngokutshalwa kwezimali okuphelele okulinganiselwa ku-¥13.2 billion.
Njengempahla yokusetshenziswa yama-chips, ama-ingots e-silicone ecwebe kakhulu e-single-crystal avela kububanzi obungu-6 intshi ukuya ku-12-intshi. Iziqalo zama-chip zamazwe ngamazwe ezihamba phambili, njenge-TSMC kanye ne-GlobalFoundries, zenza ama-chips kusuka kuma-silicon wafers angu-12-intshi emakethe ehamba phambili, kuyilapho ama-wafers angu-8-intshi ekhishwa kancane kancane. Umholi wasekhaya u-SMIC usasebenzisa amawafa angama-intshi angu-6. Njengamanje, i-SUMCO yase-Japan kuphela engakhiqiza ama-wafer substrates angama-intshi angu-12-intshi ahlanzekile.
3. I-Gallium Arsenide
Ama-wafers e-Gallium arsenide (GaAs) ayinto ebalulekile ye-semiconductor, futhi usayizi wawo uyipharamitha ebalulekile enqubweni yokulungiselela.
Njengamanje, ama-wafers e-GaAs avame ukukhiqizwa ngosayizi wama-intshi angu-2, ama-intshi angu-3, ama-intshi angu-4, ama-intshi angu-6, ama-intshi angu-8, nama-intshi angu-12. Phakathi kwalokhu, ama-wafers angu-6-intshi angenye yezincazelo ezisetshenziswa kakhulu.
Ubukhulu obukhulu bekristalu elilodwa elikhuliswe indlela ye-Horizontal Bridgman (HB) ngokuvamile ingamayintshi angu-3, kuyilapho indlela ye-Liquid-Encapsulated Czochralski (LEC) ingakhiqiza amakristalu awodwa afinyelela kumayintshi angu-12 ububanzi. Kodwa-ke, ukukhula kwe-LEC kudinga izindleko zemishini ephezulu futhi kuveza amakristalu angafanayo kanye nokuminyana okuphezulu kokugudluka. I-Vertical Gradient Freeze (VGF) kanye nezindlela ze-Vertical Bridgman (VB) okwamanje zingakhiqiza amakristalu awodwa afinyelela kumayintshi angu-8 ububanzi, anesakhiwo esifana ngokufanayo kanye nokuminyana okuphansi kokugudluka.
Ubuchwepheshe bokukhiqiza bama-wafer angu-4-intshi nama-6-inch semi-insulating GaAs abapholishelwe ngokuyinhloko buphethwe izinkampani ezintathu: I-Sumitomo Electric Industries yase-Japan, i-Freiberger Compound Materials yaseJalimane, kanye ne-AXT yase-US. Ngo-2015, ama-substrates angu-6-intshi asevele athatha ngaphezu kuka-90% wesabelo semakethe.
Ngo-2019, imakethe ye-GaAs substrate yomhlaba wonke yayibuswa yiFreiberger, iSumitomo, neBeijing Tongmei, ngamasheya emakethe angama-28%, 21%, no-13% ngokulandelana. Ngokwezilinganiso ezenziwa yinkampani ebonisanayo i-Yole, ukuthengiswa komhlaba wonke kwama-GaAs substrates (aguqulelwe alingana namayintshi angu-2) afinyelele cishe izingcezu eziyizigidi ezingu-20 ngo-2019 futhi kulindeleke ukuthi adlule izingcezu eziyizigidi ezingu-35 ngo-2025. Imakethe yomhlaba wonke ye-GaAs substrate yalinganiselwa ezigidini eziyizigidi ezingu-200 ngo-2019 futhi kulindeleke ukuthi ikhule ngenani lezigidi ezingu-302 ngonyaka. (CAGR) ka-9.67% kusukela ngo-2019 kuya ku-2025.
4. Silicon Carbide Single Crystal
Njengamanje, imakethe ingakwazi ukusekela ngokugcwele ukukhula kwekristalu eyodwa ye-silicon carbide (SiC) engu-2-intshi no-3-intshi ububanzi. Izinkampani eziningi zibike ukukhula ngempumelelo kwamakristalu angama-4-intshi angu-4H-uhlobo lwe-SiC olulodwa, okuphawula impumelelo yaseChina yamazinga asezingeni lomhlaba kubuchwepheshe bokukhula kwekristalu ye-SiC. Nokho, lisekhona igebe elibalulekile ngaphambi kokuhweba.
Ngokuvamile, ama-SiC ingots akhuliswe izindlela zesigaba se-liquid mancane uma kuqhathaniswa, anogqinsi ezingeni lamasentimitha. Lesi futhi isizathu sezindleko eziphezulu zama-wafers e-SiC.
I-XKH igxile kakhulu ku-R&D kanye nokucutshungulwa okwenziwe ngendlela oyifisayo kwezinto ezibalulekile ze-semiconductor, okuhlanganisa isafire, i-silicon carbide (SiC), ama-silicon wafers, nezitsha zobumba, ezimboza iketango lenani eligcwele kusukela ekukhuleni kwekristalu kuya ekwenzeni ukunemba kwemishini. Ngokusebenzisa amakhono ezimboni adidiyelwe, sihlinzeka ngamawafa esafire asebenza kahle kakhulu, ama-silicon carbide substrates, nama-silicon wafers ahlanzekile kakhulu, asekelwa izixazululo eziklanyelwe njengokusika ngokwezifiso, ukumbozwa kwendawo, nokwakhiwa kwejiyomethri eyinkimbinkimbi, ukuze kuhlangatshezwane nezidingo ezeqile zemvelo ezinhlelweni ze-laser, ukwenziwa kwe-semiconductor yamandla, nokusebenzisa amandla avuselelekayo.
Ngokuhambisana nezindinganiso zekhwalithi, imikhiqizo yethu ifaka ukunemba kwezinga le-micron, >1500°C ukuzinza kwe-thermal, nokumelana nokugqwala okuphakeme, okuqinisekisa ukwethembeka ezimeni zokusebenza ezinzima. Ukwengeza, sinikezela ngama-quartz substrates, izinto zensimbi/okungezona ezensimbi, nezinye izingxenye ze-semiconductor-grade, okuvumela izinguquko ezingenamthungo ukusuka ku-prototyping ukuya ekukhiqizweni ngobuningi kumakhasimende kuzo zonke izimboni.
Isikhathi sokuthumela: Aug-29-2025