I-Sapphire iyikristalu eyodwa ye-alumina, ingeyesistimu yekristalu ye-tripartite, isakhiwo esinama-hexagonal, isakhiwo sayo sekristalu sakhiwe ngama-athomu amathathu e-oxygen nama-athomu amabili e-aluminium ngohlobo lwe-covalent bond, ahlelwe eduze kakhulu, eneketanga eliqinile lokubopha kanye namandla e-lattice, kuyilapho ingaphakathi layo lekristalu cishe lingenawo ukungcola noma amaphutha, ngakho-ke linokushisa okuhle kakhulu kukagesi, ukucaca, ukuqhuba kahle kokushisa kanye nezici zokuqina okuphezulu. Isetshenziswa kabanzi njengefasitela elibonakalayo kanye nezinto ze-substrate ezisebenza kahle kakhulu. Kodwa-ke, isakhiwo sama-molecule se-sapphire siyinkimbinkimbi futhi kukhona i-anisotropy, futhi umthelela ezimpahleni zomzimba ezihambisanayo nawo uhlukile kakhulu ekucutshungulweni nasekusetshenzisweni kweziqondiso ezahlukene zekristalu, ngakho-ke ukusetshenziswa nakho kuhlukile. Ngokuvamile, ama-substrate e-sapphire atholakala eziqondisweni zendiza ze-C, R, A kanye ne-M.
Ukusetshenziswa kweI-wafer ye-sapphire ye-C-plane
I-Gallium nitride (GaN) njenge-semiconductor yesizukulwane sesithathu ye-bandgap ebanzi, ine-band gap eqondile ebanzi, i-atomic bond eqinile, i-thermal conductivity ephezulu, ukuzinza okuhle kwamakhemikhali (cishe akugqwali yinoma iyiphi i-asidi) kanye nekhono eliqinile lokulwa nemisebe, futhi inamathemba abanzi ekusetshenzisweni kwama-optoelectronics, amadivayisi okushisa aphezulu kanye namandla kanye namadivayisi e-microwave avame kakhulu. Kodwa-ke, ngenxa yephuzu lokuncibilika eliphezulu le-GaN, kunzima ukuthola izinto ezinkulu zekristalu elilodwa, ngakho-ke indlela evamile ukwenza ukukhula kwe-heteroepitaxy kwezinye izinto ezingaphansi komhlaba, ezinezidingo eziphakeme zezinto ezingaphansi komhlaba.
Uma kuqhathaniswa ne-isisekelo sesafirengezinye ubuso bekristalu, izinga lokungafani kwe-lattice phakathi kwe-C-plane (<0001> orientation) i-sapphire wafer kanye namafilimu abekwe ngamaqembu Ⅲ-Ⅴ kanye Ⅱ-Ⅵ (njenge-GaN) lincane kakhulu, kanti izinga lokungafani kwe-lattice phakathi kwalaba ababili kanyeAmafilimu e-AlNengasetshenziswa njengesendlalelo se-buffer incane kakhulu, futhi ihlangabezana nezidingo zokumelana nokushisa okuphezulu enqubweni yokwenza i-GaN crystallization. Ngakho-ke, iyinto evamile yokukhulisa i-GaN, engasetshenziswa ukwenza ama-LED amhlophe/aluhlaza okwesibhakabhaka/aluhlaza okotshani, ama-laser diode, ama-infrared detectors njalo njalo.
Kuyafaneleka ukusho ukuthi ifilimu ye-GaN ekhuliswe ku-substrate ye-sapphire ye-C-plane ikhula eduze kwe-axis yayo ye-polar, okungukuthi, isiqondiso se-C-axis, okungeyona nje inqubo yokukhula okuvuthiwe kanye nenqubo ye-epitaxy, izindleko eziphansi kakhulu, izakhiwo zomzimba nezimakhemikhali ezizinzile, kodwa futhi nokusebenza okungcono kokucubungula. Ama-athomu e-sapphire wafer eqondiswe ku-C ahlanganiswe ngendlela ye-O-al-al-o-al-O, kuyilapho amakristalu e-sapphire aqondiswe ku-M kanye ne-A ahlanganiswe ku-al-O-al-O. Ngenxa yokuthi i-Al-Al inamandla okubopha aphansi kanye nokubopha okubuthakathaka kune-Al-O, uma kuqhathaniswa namakristalu e-sapphire aqondiswe ku-M kanye ne-A, ukucutshungulwa kwe-C-sapphire ngokuyinhloko ukuvula ukhiye we-Al-Al, okulula ukuwucubungula, futhi ongathola ikhwalithi ephezulu yobuso, bese uthola ikhwalithi engcono ye-gallium nitride epitaxial, engathuthukisa ikhwalithi ye-LED emhlophe/eluhlaza okwesibhakabhaka ekhanya kakhulu. Ngakolunye uhlangothi, amafilimu akhuliswe eceleni kwe-C-axis anemiphumela yokwehlukanisa ngokuzenzakalelayo kanye ne-piezoelectric, okuholela ensimini kagesi enamandla yangaphakathi ngaphakathi kwamafilimu (i-active layer quantum Wells), okunciphisa kakhulu ukusebenza kahle okukhanyayo kwamafilimu e-GaN.
I-wafer yesafire yendizaisicelo
Ngenxa yokusebenza kwayo okuhle kakhulu okuphelele, ikakhulukazi ukudlulisa okuhle kakhulu, ikristalu elilodwa le-sapphire lingathuthukisa umphumela wokungena kwe-infrared, futhi libe yinto efanelekile yefasitela eliphakathi ne-infrared, elisetshenziswe kabanzi emishinini yezempi ye-photoelectric. Lapho i-sapphire iyindiza ye-polar (indiza ye-C) ohlangothini olujwayelekile lobuso, iyindawo engeyona i-polar. Ngokuvamile, ikhwalithi yekristalu ye-sapphire eqondiswe ku-A ingcono kunekristalu eqondiswe ku-C, enokususwa okuncane, isakhiwo esincane se-Mosaic kanye nesakhiwo sekristalu esiphelele, ngakho-ke inokusebenza okungcono kokudlulisa ukukhanya. Ngesikhathi esifanayo, ngenxa yemodi yokubopha i-athomu ye-Al-O-Al-O endizeni a, ubulukhuni kanye nokumelana nokuguguleka kwe-sapphire eqondiswe ku-A kuphakeme kakhulu kune-sapphire eqondiswe ku-C. Ngakho-ke, ama-chips aqondiswe ku-A asetshenziswa kakhulu njengezinto zefasitela; Ngaphezu kwalokho, i-A sapphire nayo inezakhiwo ezifanayo ze-dielectric constant kanye ne-high insulation, ngakho-ke ingasetshenziswa kubuchwepheshe be-hybrid microelectronics, kodwa futhi nokukhula kwama-conductor amahle kakhulu, njengokusetshenziswa kwe-TlBaCaCuO (TbBaCaCuO), i-Tl-2212, ukukhula kwamafilimu e-epitaxial superconducting ahlukene ku-cerium oxide (CeO2) sapphire composite substrate. Kodwa-ke, futhi ngenxa yamandla amakhulu e-bond e-Al-O, kunzima kakhulu ukuyicubungula.
Ukusetshenziswa kweI-wafer yesapphire yendiza ye-R/M
I-R-plane iwubuso obungeyona i-polar be-sapphire, ngakho-ke ushintsho endaweni ye-R-plane kudivayisi ye-sapphire luyinika izakhiwo ezahlukene zemishini, ezishisayo, zikagesi, kanye nezokukhanya. Ngokuvamile, i-R-surface sapphire substrate ikhethwa kakhulu ekufakweni kwe-silicon ye-heteroepitaxial, ikakhulukazi kwezicelo zesekethe ezihlanganisiwe ze-semiconductor, i-microwave kanye ne-microelectronics, ekukhiqizweni kwe-lead, ezinye izingxenye ze-superconducting, ama-resistor amelana nokumelana okuphezulu, i-gallium arsenide nayo ingasetshenziswa ekukhuleni kwe-substrate yohlobo lwe-R. Njengamanje, ngokuthandwa kwamafoni ahlakaniphile kanye nezinhlelo zamakhompyutha ethebhulethi, i-R-face sapphire substrate ithathe indawo yamadivayisi e-SAW ahlanganisiwe asetshenziswa amafoni ahlakaniphile namakhompyutha ethebhulethi, okuhlinzeka nge-substrate yamadivayisi angathuthukisa ukusebenza.
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Isikhathi sokuthunyelwe: Julayi-16-2024