Isafire iyikristalu eyodwa ye-alumina, ingeye-tripartite crystal system, isakhiwo esiyi-hexagonal, isakhiwo sayo sekristalu sakhiwe ama-athomu amathathu omoya-mpilo nama-athomu amabili e-aluminium ohlobo lwe-covalent bond, ehlelwe ngokusondelene kakhulu, neketango eliqinile lokubopha kanye namandla e-lattice, kuyilapho i-crystal ingaphakathi cishe akukho ukungcola noma amaphutha, ngakho-ke ine-insulation kagesi enhle kakhulu, ukukhanya, ukuguquguquka okuhle kwe-thermal kanye nezici eziphezulu zokuqina. Isetshenziswa kabanzi njengewindi le-optical kanye nezinto ezisezingeni eliphezulu ze-substrate. Kodwa-ke, ukwakheka kwamangqamuzana esafire kuyinkimbinkimbi futhi kukhona i-anisotropy, futhi umthelela wezakhiwo zomzimba ezihambisanayo nawo uhluke kakhulu ekucubunguleni nasekusetshenzisweni kwezikhombisi-ndlela zekristalu ezahlukene, ngakho-ke ukusetshenziswa nakho kuhlukile. Ngokuvamile, ama-sapphire substrates atholakala ngezikhombisi-ndlela zendiza engu-C, R, A kanye no-M.
Ukusetshenziswa kweIcwecwe lesafire le-C-plane
I-Gallium nitride (GaN) njenge-bandgap ebanzi ye-semiconductor yesizukulwane sesithathu, inegebe elibanzi lebhande eliqondile, isibopho esiqinile se-athomu, ukuhanjiswa kwe-thermal okuphezulu, ukuzinza okuhle kwamakhemikhali (cishe akugqwalwa yinoma iyiphi i-asidi) nekhono eliqinile lokulwa nemisebe, futhi inamathemba abanzi ukusetshenziswa kwama-optoelectronics, izinga lokushisa eliphezulu kanye namadivayisi anamandla kanye namadivayisi we-microwave amvamisa ephezulu. Kodwa-ke, ngenxa yezinga eliphezulu lokuncibilika kwe-GaN, kunzima ukuthola izinto zekristalu ezinobukhulu obukhulu, ngakho-ke indlela evamile iwukwenza ukukhula kwe-heteroepitaxy kwamanye ama-substrates, anezidingo eziphakeme ze-substrate materials.
Uma kuqhathaniswa nei-sapphire substratengobunye ubuso obuyikristalu, izinga le-lattice elihlala njalo lokungafani phakathi kwe-C-plane (<0001> orientation) isicwecwana sesafire kanye namafilimu afakwe ngamaqembu Ⅲ-Ⅴ kanye no-Ⅱ-Ⅵ (njenge-GaN) mancane uma kuqhathaniswa, futhi i-lattice ayifani isilinganiso phakathi kokubili kanyeAmafilimu e-AlNengasetshenziswa njengongqimba lwebhafa luncane kakhulu, futhi luhlangabezana nezidingo zokumelana nezinga lokushisa eliphezulu kunqubo ye-GaN crystallization. Ngakho-ke, iyinto evamile ye-substrate yokukhula kwe-GaN, engasetshenziswa ukwenza ama-leds amhlophe / aluhlaza okwesibhakabhaka / aluhlaza, ama-laser diode, ama-infrared detectors nokunye.
Kuhle ukusho ukuthi ifilimu ye-GaN etshalwe ku-substrate yesafire ye-C-plane ikhula eduze kwe-axis yayo ye-polar, okungukuthi, isiqondiso se-C-axis, okungeyona nje inqubo yokukhula okuvuthiwe kanye nenqubo ye-epitaxy, izindleko eziphansi kakhulu, ezinzile ngokomzimba. kanye nezakhiwo zamakhemikhali, kodwa futhi nokusebenza okungcono kokucubungula. Ama-athomu ewafa yesafire agxile ku-C ahlanganiswe ngohlelo lwe-O-al-al-o-al-O, kuyilapho amakristalu esafire agxile ku-M nagxile ku-A ahlanganiswe ku-al-O-al-O. Ngenxa yokuthi i-Al-Al inamandla okubopha aphansi kanye nesibopho esibuthakathaka kune-Al-O, uma kuqhathaniswa namakristalu esafire agxile ku-M nagxile ku-A, Ukucutshungulwa kwe-C-sapphire ikakhulukazi ukuvula ukhiye we-Al-Al, okulula ukuwucubungula. , futhi ingathola ikhwalithi ephezulu yendawo ephezulu, bese ithola ikhwalithi engcono ye-gallium nitride epitaxial, engathuthukisa ikhwalithi yokukhanya okuphezulu okuphezulu okumhlophe/okuluhlaza kwe-LED. Ngakolunye uhlangothi, amafilimu akhule eduze kwe-C-axis anemiphumela ezenzakalelayo kanye ne-piezoelectric polarization, okuholela endaweni eqinile yangaphakathi kagesi ngaphakathi kwamafilimu (ungqimba olusebenzayo lwe-quantum Wells), okunciphisa kakhulu ukusebenza kahle okukhanyayo kwamafilimu e-GaN.
Isicwecwana sesafire esiyindizaisicelo
Ngenxa yokusebenza kwayo okuhle kakhulu okubanzi, ikakhulukazi ukudlulisela phambili okuhle kakhulu, ikristalu eyodwa yesafire ingathuthukisa umphumela wokungena kwe-infrared, futhi ibe into efanelekile yefasitela elimaphakathi ne-infrared, elisetshenziswe kabanzi emishinini yezempi yezithombe zikagesi. Lapho isafire kuyindiza ye-polar (indiza engu-C) endaweni evamile yobuso, indawo engeyona indawo epholile. Ngokuvamile, ikhwalithi ye-A-oriented sapphire crystal ingcono kune-C-oriented crystal, ene-dislocation encane, isakhiwo se-Mosaic esincane kanye nesakhiwo sekristalu esiphelele, ngakho-ke inokusebenza okungcono kokudlulisa ukukhanya. Ngesikhathi esifanayo, ngenxa yemodi yokubopha i-athomu ye-Al-O-Al-O endizeni engu-a, ubulukhuni nokumelana nokugqokwa kwesafire egxile ku-A kuphezulu kakhulu kunaleyo yesafire egxile ku-C. Ngakho-ke, ama-chips A-directional asetshenziswa kakhulu njengezinto zefasitela; Ngaphezu kwalokho, isafire iphinde ibe nezakhiwo ezifanayo ze-dielectric kanye ne-insulation ephezulu, ngakho-ke ingasetshenziswa kubuchwepheshe be-hybrid microelectronics, kodwa futhi nasekukhuleni kwama-conductor amahle kakhulu, njengokusetshenziswa kwe-TlBaCaCuO (TbBaCaCuO), Tl-2212, ukukhula. yamafilimu e-heterogeneous epitaxial superconducting ku-cerium oxide (CeO2) i-sapphire composite substrate. Kodwa-ke, futhi ngenxa yamandla amakhulu webhondi ye-Al-O, kunzima kakhulu ukucubungula.
Isicelo seIsicwecwana sesafire sendiza engu-R/M
Indiza engu-R iyindawo engeyona indawo epholile yesafire, ngakho-ke uguquko endaweni yendiza engu-R kudivayisi yesafire luyinikeza izici ezihlukile zokusebenzisa, ezishisayo, zikagesi, nezokubona. Ngokuvamile, i-R-surface sapphire substrate ikhethwa ekubekweni kwe-silicon nge-heteroepitaxial, ikakhulukazi kwi-semiconductor, i-microwave kanye ne-microelectronics edidiyelwe izinhlelo zokusebenza zesekethe, ekukhiqizeni umthofu, ezinye izingxenye ze-superconducting, ukumelana nokumelana okuphezulu, i-gallium arsenide nayo ingasetshenziselwa i-R- thayipha ukukhula kwe-substrate. Njengamanje, ngokuduma kwamafoni ahlakaniphile nezinhlelo zekhompiyutha yethebhulethi, i-R-face sapphire substrate ithathe indawo yamadivayisi akhona e-SAW akhona asetshenziselwa amafoni ahlakaniphile namathebulethi, ehlinzeka nge-substrate yamadivayisi angathuthukisa ukusebenza.
Uma kukhona ukwephulwa komthetho, susa othintana naye
Isikhathi sokuthumela: Jul-16-2024