I-N-Type SiC on Si Composite Substrates Dia6inch

等级Ibanga

U 级

P级

D级

Ibanga Eliphansi le-BPD

Ibanga Lokukhiqiza

Ibanga Eliyimbumbulu

直径Ububanzi

150.0 mm±0.25mm

厚度Ubukhulu

500 μm±25μm

晶片方向Ukuqondiswa kwe-Wafer

I-axis evaliwe: 4.0°ukuya ku-< 11-20 > ± 0.5°ku-4H-N Ku-axis: <0001>± 0.5°ku-4H-SI

主定位边方向Ifulethi Eliyinhloko

{10-10}±5.0°

主定位边长度Ubude Obuphansi Obuyinhloko

47.5 mm±2.5 mm

边缘Ukukhishwa komngcele

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow/Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错I-MPD ne-BPD

I-MPD≤1 cm-2

I-MPD≤5 cm-2

I-MPD≤15 cm-2

I-BPD≤1000cm-2

电阻率Ukumelana

≥1E5 Ω·cm

表面粗糙度Ubulukhuni

I-Polish Ra≤1 nm

I-CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Akukho

Ubude obuhlanganisiwe ≤10mm, ubude obubodwa ≤2mm

Imifantu ngokukhanya okuphezulu

六方空洞（强光灯观测）*

Indawo ehlanganisiwe ≤1%

Indawo eqongelelayo ≤5%

Amapuleti e-Hex ngokukhanya okuphezulu

多型(强光灯观测)*

Akukho

Indawo eqongelelekayo ≤5%

Izindawo ze-Polytype ngokukhanya okuphezulu

划痕(强光灯观测)*&

Imihuzuko emi-3 kuya ku-1 × ububanzi be-wafer

Imihuzuko emi-5 kuya ku-1 × ububanzi be-wafer

Ukuklwebheka ngokukhanya okunamandla aphezulu

ubude obuhlanganisiwe

ubude obuhlanganisiwe

崩边# I-chip yonqenqema

Akukho

5 kuvunyelwe, ≤1 mm ngayinye

表面污染物(强光灯观测）

Akukho

Ukungcoliswa ukukhanya okunamandla kakhulu