I-N-Type SiC ku-Si Composite Substrates Dia6inch

等级Ibanga

U 级

P级

D级

Ibanga eliphansi le-BPD

Ibanga Lokukhiqiza

Dummy Grade

直径Ububanzi

150.0 mm±0.25mm

厚度Ubukhulu

500 μm±25μm

晶片方向I-Wafer Orientation

Ku-axis evaliwe : 4.0° kuya ku-< 11-20 > ±0.5° ku-4H-N Ku-eksisi : <0001>±0.5° ku-4H-SI

主定位边方向Ifulethi eliyisisekelo

{10-10}±5.0°

主定位边长度Ubude Befulethi obuyisisekelo

47.5 mm±2.5 mm

边缘Ukukhishwa eceleni

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow/Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错I-MPD&BPD

I-MPD≤1 cm-2

I-MPD≤5 cm-2

I-MPD≤15 cm-2

I-BPD≤1000cm-2

电阻率Ukungazweli

≥1E5 Ω·cm

表面粗糙度Ubulukhuni

I-Polish Ra≤1 nm

I-CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Lutho

Ubude obuqongelelwayo ≤10mm, ubude obubodwa≤2mm

Imifantu ngokukhanya okukhulu

六方空洞（强光灯观测）*

Indawo eqoqiwe ≤1%

Indawo eqoqiwe ≤5%

I-Hex Plates ngokukhanya okuphezulu kakhulu

多型(强光灯观测)*

Lutho

Indawo eqoqiwe≤5%

Izindawo ze-Polytype ngokukhanya okuphezulu kakhulu

划痕(强光灯观测)*&

3 imihuzuko ukuya ku-1 × ububanzi bewafa

Imihuzuko emi-5 ukuya ku-1 × ububanzi be-wafer

Iklwejwa ngokukhanya okukhulu kakhulu

ubude obuhlanganisiwe

ubude obuhlanganisiwe

崩边# I-Edge chip

Lutho

5 okuvunyelwe, ≤1 mm ngakunye

表面污染物(强光灯观测）

Lutho

Ukungcoliswa ukukhanya okunamandla aphezulu