Izingxenyana ze-SiC Composite ze-N-Type Dia6inch I-monocrystalline esezingeni eliphezulu kanye ne-substrate esezingeni eliphansi
I-N-Type SiC Composite Substrates Ithebula lamapharamitha avamile
| 项目Izinto | 指标Imininingwane | 项目Izinto | 指标Imininingwane |
| 直径Ububanzi | 150±0.2mm | 正 面 ( 硅 面 ) 粗 糙 度 Ubulukhuni bangaphambili (ubuso obuyi-Si-face) | I-Ra≤0.2nm (5μm*5μm) |
| 晶型Uhlobo lwe-Polytype | 4H | I-Edge Chip, Ukuklwebheka, Ukuqhekeka (ukuhlolwa okubonakalayo) | Akukho |
| 电阻率Ukumelana | 0.015-0.025ohm ·cm | 总厚度变化I-TTV | ≤3μm |
| Ubukhulu bengqimba yokudlulisa | ≥0.4μm | 翘曲度I-Warp | ≤35μm |
| 空洞Ize | ≤5ea/i-wafer (2mm>D>0.5mm) | 总厚度Ubukhulu | 350±25μm |
Igama elithi "uhlobo lwe-N" libhekisela ohlotsheni lokusebenzisa i-doping olusetshenziswa ezintweni ze-SiC. Ku-physics ye-semiconductor, ukusebenzisa i-doping kuhilela ukungeniswa ngamabomu kokungcola ku-semiconductor ukuze kushintshwe izakhiwo zayo zikagesi. Ukusebenzisa i-doping yohlobo lwe-N kuveza izakhi ezihlinzeka ngama-electron amaningi amahhala, okunikeza izinto ukuhlushwa kwe-negative charge carrier.
Izinzuzo ze-substrates ze-N-type SiC ezihlanganisiwe zifaka:
1. Ukusebenza kwezinga lokushisa eliphezulu: I-SiC inokushisa okuphezulu futhi ingasebenza emazingeni okushisa aphezulu, okwenza ifaneleke ukusetshenziswa kwe-elekthronikhi okunamandla aphezulu kanye nemvamisa ephezulu.
2. I-voltage ephezulu yokuqhekeka: Izinto ze-SiC zine-voltage ephezulu yokuqhekeka, ezizivumela ukuthi zikwazi ukumelana nezinkundla zikagesi eziphezulu ngaphandle kokuqhekeka kukagesi.
3. Ukumelana namakhemikhali kanye nemvelo: I-SiC imelana namakhemikhali futhi ingamelana nezimo zemvelo ezinzima, okwenza ifaneleke ukusetshenziswa ezinhlotsheni ezinzima.
4. Ukulahlekelwa amandla okuncishisiwe: Uma kuqhathaniswa nezinto ezisetshenziswa njenge-silicon, ama-substrate e-SiC avumela ukuguqulwa kwamandla okuphumelelayo futhi anciphise ukulahlekelwa kwamandla kumadivayisi kagesi.
5. Igebe elikhulu: I-SiC inegebe elikhulu, okuvumela ukuthuthukiswa kwamadivayisi kagesi angasebenza emazingeni okushisa aphezulu kanye nobuningi bamandla obuphezulu.
Sekukonke, ama-substrate e-SiC ahlanganisiwe ohlobo lwe-N anikeza izinzuzo ezibalulekile ekuthuthukisweni kwamadivayisi kagesi asebenza kahle kakhulu, ikakhulukazi ezisetshenzisweni lapho ukusebenza kwezinga lokushisa eliphezulu, ukuminyana kwamandla aphezulu, kanye nokuguqulwa kwamandla okuphumelelayo kubalulekile.