I-N-Type SiC Composite Substrates Dia6inch Ikhwalithi ephezulu ye-monocrystaline ne-substrate yekhwalithi ephansi

Igama elithi "N-uhlobo" libhekisela ohlotsheni lwe-doping olusetshenziswa ezintweni ze-SiC. Ku-physics ye-semiconductor, i-doping ihilela ukwethulwa ngamabomu kokungcola ku-semiconductor ukuze kuguqulwe izici zayo zikagesi. I-N-type doping yethula izakhi ezihlinzeka ngokwedlulele kwama-electron amahhala, okunikeza okokusebenza ukugxilisa okungeyikho kwenkampani yenethiwekhi.

Izinzuzo ze-N-type SiC composite substrates zihlanganisa:

1. Ukusebenza okuphezulu kokushisa: I-SiC inokuhamba okuphezulu kwe-thermal futhi ingasebenza emazingeni okushisa aphezulu, okwenza ifaneleke kuzinhlelo zokusebenza ze-elekthronikhi ezinamandla amakhulu kanye ne-high-frequency.

2. I-voltage ephezulu yokuphuka: Izinto ze-SiC zine-voltage ephezulu yokuphuka, ezizenza zikwazi ukumelana nezinkundla zikagesi eziphakeme ngaphandle kokuphuka kukagesi.

3. Ukumelana namakhemikhali nemvelo: I-SiC ayizwani namakhemikhali futhi ingamelana nezimo zemvelo ezinzima, okuyenza ifanelekele ukusetshenziswa ezinhlelweni eziyinselele.

4. Ukuncipha kokulahlekelwa kwamandla: Uma kuqhathaniswa nezinto zendabuko ezisekelwe ku-silicon, ama-substrates e-SiC anika amandla ukuguqulwa kwamandla okuphumelelayo futhi anciphise ukulahlekelwa kwamandla kumadivayisi kagesi.

5. I-Wide bandgap: I-SiC ine-bandgap ebanzi, evumela ukuthuthukiswa kwezinto zikagesi ezingasebenza emazingeni okushisa aphezulu kanye nokuminyana kwamandla aphezulu.

Sekukonke, ama-substrates ayinhlanganisela ye-SiC yohlobo lwe-N anikeza izinzuzo ezibalulekile zokuthuthukiswa kwemishini kagesi esebenza kahle kakhulu, ikakhulukazi ezinhlelweni zokusebenza lapho ukusebenza kwezinga lokushisa eliphezulu, ukuminyana kwamandla aphezulu, nokuguqulwa kwamandla okusebenzayo kubalulekile.