Imishini ye-Microjet laser technology wafer yokusika i-SiC material processing

I-Microjet laser technology wafer yokusika i-SiC material processing Isithombe Esifakiwe

Incazelo emfushane:

Imishini yobuchwepheshe be-laser ye-Microjet iwuhlobo lwesistimu yokunemba ehlanganisa i-laser yamandla aphezulu kanye nejethi eliwuketshezi lezinga le-micron. Ngokuhlanganisa i-laser beam kujethi ye-liquid enesivinini esikhulu (amanzi akhishwe nge-deionized noma uketshezi olukhethekile), ukucutshungulwa kwezinto ezibonakalayo ngokunemba okuphezulu kanye nomonakalo ophansi oshisayo kungenziwa. Lobu buchwepheshe bufaneleka ngokukhethekile ukusika, ukubhola kanye nokucutshungulwa kwe-microstructure yezinto eziqinile neziphukayo (ezifana ne-SiC, isafire, ingilazi), futhi isetshenziswa kabanzi ku-semiconductor, isibonisi se-photoelectric, amadivaysi ezokwelapha neminye imikhakha.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Umgomo wokusebenza:

1. Ukuhlanganisa i-laser: i-pulsed laser (i-UV/green/infrared) igxile ngaphakathi kwejethi ewuketshezi ukuze kwakheke isiteshi sokudlulisa amandla esizinzile.

2. Isiqondiso soketshezi: indiza enesivinini esikhulu (izinga lokugeleza 50-200m/s) ipholisa indawo yokucubungula futhi isuse udoti ukugwema ukunqwabelana kokushisa nokungcola.

3. Ukususwa kwezinto ezibonakalayo: Amandla we-laser abangela umphumela we-cavitation oketshezini ukuze kuzuzwe ukucubungula okubandayo kwento (indawo ethintekile ukushisa <1μm).

4. Ukulawula okunamandla: ukulungiswa kwesikhathi sangempela kwemingcele ye-laser (amandla, imvamisa) nokucindezela kwe-jet ukuze kuhlangatshezwane nezidingo zezinto ezihlukahlukene kanye nezakhiwo.

Amapharamitha angukhiye:

1. Amandla e-laser: 10-500W (ashintshekayo)

2. Ububanzi beJet: 50-300μm

3.Ukunemba komshini: ±0.5μm (ukusika), isilinganiso sokujula nobubanzi 10:1 (ukubhola)

Izinzuzo zobuchwepheshe:

(1) Ukushisa okucishe kube yiziro
- Ukupholisa ijethi eliwuketshezi kulawula indawo ethinteke ekushiseni (HAZ) ukuze ibe **<1μm**, igwema imifantu emincane ebangelwa ukucubungula kwe-laser evamile (i-HAZ ivamise ukuba ngu->10μm).

(2) Ukunemba okuphezulu kakhulu kwemishini
- Ukunemba kokusika/ukubhoboza kufika ku-*± 0.5μm**, ukuhwalala konqenqema Ra<0.2μm, kunciphisa isidingo sokupholisha okulandelayo.

- Sekela ukucutshungulwa kwesakhiwo se-3D esiyinkimbinkimbi (njengezimbobo eziqinile, izikhala ezinomumo).

(3) Ukuhambisana kwezinto ezibanzi
- Izinto eziqinile neziphukayo: I-SiC, isafire, ingilazi, izitsha zobumba (izindlela zendabuko kulula ukuziphihliza).

- Izinto ezizwela ukushisa: ama-polymers, izicubu ze-biological (ayikho ingozi ye-denaturation eshisayo).

(4) Ukuvikelwa kwemvelo nokusebenza kahle
- Akukho ukungcola kothuli, uketshezi lungagaywa kabusha futhi luhlungwe.

- 30% -50% ukwanda kwejubane lokucubungula (vs. machining).

(5) Ukulawula okuhlakaniphile
- Ukuma okubonakalayo okuhlanganisiwe kanye nokwenza kahle kwepharamitha ye-AI, ukujiya kwezinto eziguquguqukayo kanye nokukhubazeka.

Imininingwane yobuchwepheshe:

Ivolumu ye-Countertop	300300150	400400200
I-eksisi yomugqa XY	Injini yomugqa. Injini yomugqa	Injini yomugqa. Injini yomugqa
I-eksisi yomugqa Z	150	200
Ukubeka ukunemba μm	+/-5	+/-5
Ukunemba kokuma okuphindaphindiwe μm	+/-2	+/-2
Ukusheshisa G	1	0.29
Ukulawula izinombolo	3 i-eksisi /3+1 ieksisi /3+2 ieksisi	3 i-eksisi /3+1 ieksisi /3+2 ieksisi
Uhlobo lokulawula izinombolo	I-DPSS Nd:YAG	I-DPSS Nd:YAG
Ubude begagasi nm	532/1064	532/1064
Amandla alinganiselwe W	50/100/200	50/100/200
Indiza yamanzi	40-100	40-100
Ibha yokucindezela yeNozzle	50-100	50-600
Ubukhulu (ithuluzi lomshini) (ububanzi * ubude * ubude) mm	144519442260	170015002120
Usayizi (ikhabethe lokulawula) (W * L * H)	70025001600	70025001600
Isisindo (impahla) T	2.5	3
Isisindo (ikhabhinethi yokulawula) KG	800	800
Amandla okucubungula	Ubulukhuni bobuso Ra≤1.6um Isivinini sokuvula ≥1.25mm/s Ukusika isiyingi ≥6mm/s Isivinini sokusika ngomugqa ≥50mm/s	Ubulukhuni bobuso Ra≤1.2um Isivinini sokuvula ≥1.25mm/s Ukusika isiyingi ≥6mm/s Isivinini sokusika ngomugqa ≥50mm/s
	Okwekristalu ye-gallium nitride, i-ultra-wide band gap semiconductor materials (i-diamond/Gallium oxide), izinto ezikhethekile ze-aerospace, i-LTCC carbon ceramic substrate, i-photovoltaic, ikristalu ye-scintillator nokunye ukucutshungulwa kwezinto. Qaphela: Amandla okucubungula ayahluka kuye ngezici zempahla

Ikesi yokucubungula:

Izinsizakalo ze-XKH:

I-XKH ihlinzeka ngoxhaso olugcwele lwesevisi yomjikelezo wokuphila okugcwele kwemishini yobuchwepheshe belaser ye-microjet, kusukela ekuthuthukisweni kwenqubo yasekuqaleni kanye nokubonisana nokukhetha kwemishini, kuya ekuhlanganisweni kwesistimu eyenziwe ngokwezifiso yamaphakathi nethemu (okuhlanganisa ukumatanisa okukhethekile komthombo we-laser, i-jet system kanye nemojula ye-automation), kuya ekuqeqeshweni kwakamuva kokusebenza nokugcinwa kanye nokuthuthukiswa kwenqubo eqhubekayo, yonke inqubo ifakwe ukwesekwa kwethimba lochwepheshe; Ngokusekelwe eminyakeni engu-20 yokuhlangenwe nakho okunembayo kwemishini, singanikeza izixazululo zokuma okukodwa okuhlanganisa ukuqinisekiswa kwemishini, isingeniso sokukhiqiza ngobuningi kanye nokusabela okusheshayo ngemva kokuthengisa (amahora angu-24 osekelo lobuchwepheshe + ukhiye wezingxenye eziyisipele ezigciniwe) ezimbonini ezahlukene ezifana ne-semiconductor nezokwelapha, futhi sithembise iwaranti yezinyanga eziyi-12 nokugcinwa nokuthuthukiswa kwesevisi impilo yonke. Qinisekisa ukuthi okokusebenza kwekhasimende kuhlala kulondoloze ukusebenza okuhamba phambili kokucubungula nokusebenza nokuzinza.