I-LiTaO3 Lithium Tantalate Ingots ene-Fe/Mg Doping Eyenziwe ngendlela oyifisayo 4inch 6inch 8inch for Industrial Sensing

I-LiTaO3 Lithium Tantalate Ingots ene-Fe/Mg Doping Eyenziwe ngendlela oyifisayo 4inch 6inch 8inch ukuze uthole i-Industrial Sensing Isithombe Esifakiwe

Incazelo emfushane:

I-LiTaO3 Ingots (I-Lithium Tantalate Ingots), njengezisetshenziswa eziyinhloko zesizukulwane sesithathu se-wide-bandgap semiconductors nama-optoelectronics, zithuthukisa izinga lokushisa eliphezulu le-Curie (607°C), uhla olubanzi lokubonisa ngale (400–5,200 nm), i-coefficient ye-electromechanical coupling enhle kakhulu (Kt² >15%), nokulahlekelwa kwe-dielectric okuphansi (tanδ <2%) ukuze kushintshwe ukuxhumana kwe-5G, i-quantum computing, nokuhlanganiswa kwezithombe. Ngobuchwepheshe bokwakha obuthuthukisiwe obufana nokuthutha umhwamuko obonakalayo (PVT) kanye nekhemikhali yokufaka umhwamuko (CVD), sihlinzeka ngeziyingo ezingu-X/Y/Z-cut, 42°Y-cut, nezigxotshwa ngezikhathi ezithile (PPLT) ekucacisweni okungu-3–8-inch, okufaka ukuminyana kwe-micropipe <0.1 cm⁻² <0.1 cm⁻² nokugudluka kwe-cm². Izinsizakalo zethu zifaka i-Fe/Mg doping, i-proton exchange waveguides, kanye ne-silicon-based heterogeneous integration (POI), ekhuluma nezihlungi ezisebenza kahle kakhulu, imithombo yokukhanya ye-quantum, nezitholi ze-infrared. Lokhu okubalulekile kuqhuba impumelelo ekwenzeni okuncane, ukusebenza kwemvamisa ephezulu, nokuzinza kwe-thermal, kusheshisa ukushintshwa kwasekhaya kanye nentuthuko yezobuchwepheshe.

Thumela i-imeyili kithi

Izici

Imingcele yezobuchwepheshe

Ukucaciswa	Okuvamile	Ukunemba okuphezulu
Izinto zokwakha	Ama-wafers we-LiTaO3(LT)/LiNbO3	Ama-wafers we-LiTaO3(LT)/LiNbO3
Ukuqondisa	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Ukuhambisana	30″	10''
I-Perpendicular	10′	5'
surface Quality	40/20	20/10
I-Wavefront Distortion	λ/4@632nm	λ/8@632nm
I-Surface Flatness	λ/4@632nm	λ/8@632nm
Imbobo ecacile	>90%	>90%
I-Chamfer	<0.2×45°	<0.2×45°
Ukuqina/Ukubekezelelana Kobubanzi	±0.1 mm	±0.1 mm
Ubukhulu bobukhulu	usayizi 150 × 50 mm	usayizi 150 × 50 mm

Izinsizakalo ze-XKH

1. Ukwenziwa Kwezingothi Ezinkulu.

Usayizi Nokusika: ama-ingots angu-3–8-inch ane-X/Y/Z-cut, 42°Y-cut, kanye nokusikeka kwe-angular ngokwezifiso (±0.01° ukubekezelelana).

Ukulawula I-Doping: I-Fe/Mg co-doping ngendlela ye-Czochralski (ububanzi bokugxila 10¹⁶–10¹⁹ cm⁻³) ukuze kuthuthukiswe ukumelana nesithombe nokusimama kokushisa.

2. I-Advanced Process Technologies.

Ukuhlanganiswa Okungafani: Amawafa ayinhlanganisela asuselwa ku-Silicon-LiTaO3 (POI) anokulawula ukujiya (300–600 nm) kanye nokushintshashintsha kwe-thermal kufika ku-8.78 W/m·K ngezihlungi ze-SAW zemvamisa ephezulu.

I-Waveguide Fabrication: I-Proton exchange (PE) kanye namasu okushintshanisa i-proton (i-RPE) ehlehlayo, ukufeza ama-submicron waveguides (Δn >0.7) kumamojula we-electro-optic anesivinini esiphezulu (umkhawulokudonsa >40 GHz).

3. Amasistimu Wokuphatha Ikhwalithi

Ukuhlolwa kokuphela kuya ekupheleni: I-Raman spectroscopy (i-polytype verification), i-XRD (crystallinity), i-AFM (i-surface morphology), nokuhlolwa kokufana kokubona (Δn <5×10⁻⁵).

4. I-Global Supply Chain Support

Amandla Okukhiqiza: Okuphumayo kwanyanga zonke > ama-ingots angu-5,000 (8-intshi: 70%), okusekela ukulethwa kwezimo eziphuthumayo kwamahora angu-48.

Inethiwekhi Yezinhlelo Zokusebenza: Itholakala eYurophu, eNyakatho Melika, nase-Asia-Pacific ngempahla yomoya/yasolwandle enokupakishwa okulawulwa izinga lokushisa.

5. I-Technical Co-Development

Amalebhu Ahlanganyelwe E-R&D: Hlanganyela kuzinkundla zokuhlanganisa izithombe (isb., i-SiO2 yokulahlekelwa okuphansi kwesendlalelo sokubopha).

Isifinyezo

I-LiTaO3 Ingots isebenza njengezinto zamasu ezilungisa kabusha ama-optoelectronics kanye nobuchwepheshe be-quantum. Ngokusungula izinto ezintsha ekukhuleni kwekristalu (isb., i-PVT), ukunciphisa amaphutha, nokuhlanganiswa okuhlukahlukene (isb, i-POI), siletha izixazululo ezinokwethenjelwa okuphezulu, ezibizayo zezokuxhumana kwe-5G/6G, i-quantum computing, ne-IoT yezimboni. Ukuzibophezela kwe-XKH ekuthuthukiseni ukuncishiswa kokukhubazeka kwe-ingot kanye nokukala ukukhiqizwa okungama-intshi angu-8 kuqinisekisa ukuthi amakhasimende ahamba phambili kumaketanga okunikezela emhlabeni wonke, okuqhuba inkathi elandelayo ye-wide-bandgap semiconductor ecosystems.