I-InSb wafer 2inch 3inch engavulwanga uhlobo lwe-Ntype P 111 100 kuma-Infrared Detectors

I-InSb wafer 2inch 3inch umumo wohlobo lwe-Ntype P ongashintshiwe 111 100 Wezithombe Ezitholakalayo Ezitholakalayo

Incazelo emfushane:

Amawafa e-Indium Antimonide (InSb) ayizinto ezibalulekile ezisetshenziswa kubuchwepheshe bokutholwa kwe-infrared ngenxa ye-bandgap yabo encane kanye nokuhamba kwama-electron aphezulu. Atholakala ngobubanzi obungu-2 intshi no-3-intshi, lawa mawafa anikezwa ngokuhlukahluka okungaphenduki, uhlobo lwe-N, nohlobo lwe-P. Amawafa enziwe anomumo we-100 kanye ne-111, ahlinzeka ngokuguquguquka kokutholwa kwe-infrared kanye nezinhlelo zokusebenza ze-semiconductor. Ukuzwela okuphezulu nomsindo ophansi wamawafa e-InSb kuwenza alungele ukusetshenziswa kuzitholi ze-infrared infrared (MWIR) emaphakathi newavelength, amasistimu eimaging ye-infrared, nezinye izinhlelo zokusebenza ze-optoelectronic ezidinga ukunemba namandla okusebenza okuphezulu.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici

Izinketho ze-Doping:
1.Kwehlisiwe:Lawa mawafa awanawo ama-doping agents futhi asetshenziselwa ikakhulukazi izinhlelo zokusebenza ezikhethekile ezifana nokukhula kwe-epitaxial, lapho i-wafer isebenza njenge-substrate ehlanzekile.
I-2.N-Type (Te Doped):I-Tellurium (Te) doping isetshenziselwa ukwakha amawafa ohlobo lwe-N, anikeza ukuhamba kwe-electron ephezulu futhi awenze afaneleke izitholi ze-infrared, ama-electronics anesivinini esikhulu, nezinye izinhlelo zokusebenza ezidinga ukugeleza kwe-electron okusebenzayo.
I-3.P-Type (Ge Doped):I-Germanium (Ge) doping isetshenziselwa ukwakha amawafa ohlobo lwe-P, ahlinzeka ngokuhamba kwezimbobo eziphezulu futhi anikeze ukusebenza okuhle kakhulu kwezinzwa ze-infrared nama-photodetectors.

Izinketho zikasayizi:
1.Amawafa atholakala ngamadiamitha angu-2 intshi no-3-intshi. Lokhu kuqinisekisa ukuhambisana nezinqubo ezihlukahlukene zokwenziwa kwe-semiconductor namadivayisi.
2.I-wafer engu-2-intshi inobubanzi obungu-50.8±0.3mm, kuyilapho iwafa engu-3-intshi inobubanzi obungu-76.2±0.3mm.

Umumo:
1.Ama-wafers atholakala ngokuma kwe-100 kanye ne-111. I-orientation ye-100 ifaneleka kuma-electronics anesivinini esikhulu kanye nezitholi ze-infrared, kuyilapho i-111 orientation ivame ukusetshenziswa kumadivayisi adinga izakhiwo ezithile zikagesi noma ezibonakalayo.

Ikhwalithi Yobuso:
1.Lawa mawafa afika nezindawo ezipholishiwe/eziqoshwe ngekhwalithi enhle kakhulu, okuvumela ukusebenza kahle ezinhlelweni ezidinga izici ezinembile zokubona noma zikagesi.
2.Ukulungiswa kwendawo kuqinisekisa ukuminyana kwesici esiphansi, okwenza lawa mawafa alungele izinhlelo zokusebenza zokubona i-infrared lapho ukuhambisana kokusebenza kubalulekile.

I-Epi-Ready:
1.Lawa mawafa aselungele i-epi, okuwenza afanelekele izinhlelo zokusebenza ezibandakanya ukukhula kwe-epitaxial lapho izingqimba ezengeziwe zezinto zizofakwa ku-wafer ukuze kwenziwe i-semiconductor ethuthukisiwe noma i-optoelectronic device.

Izinhlelo zokusebenza

1.Izihloli ze-Infrared:Amawafa e-InSb asetshenziswa kakhulu ekwenziweni kwezitholi ze-infrared, ikakhulukazi kububanzi be-mid-wavelength infrared (MWIR). Zibalulekile ezinhlelweni zokubona ebusuku, izithombe ezishisayo, kanye nokusebenza kwezempi.
2.Amasistimu Wokuthwebula Infrared:Ukuzwela okuphezulu kwama-wafers e-InSb kuvumela ukuthwebula kwe-infrared okunembile emikhakheni eyahlukene, okuhlanganisa ukuphepha, ukubhekwa, kanye nocwaningo lwesayensi.
3.I-High-Speed Electronics:Ngenxa yokuhamba kwawo okuphezulu kwama-electron, lawa mawafa asetshenziswa kumishini kagesi ethuthukisiwe njengama-transistors anesivinini esikhulu kanye namadivayisi e-optoelectronic.
Amadivayisi we-4.Quantum Well:Ama-wafers e-InSb alungele ukusetshenziswa kwe-quantum kahle kuma-lasers, izitholi, nezinye izinhlelo ze-optoelectronic.

Amapharamitha womkhiqizo

Ipharamitha	2-intshi	3-intshi
Ububanzi	50.8±0.3mm	76.2±0.3mm
Ubukhulu	500±5μm	650±5μm
Ubuso	Kupholishiwe/Kuqoshwe	Kupholishiwe/Kuqoshwe
Uhlobo lweDoping	Ivuliwe, i-Te-doped (N), i-Ge-doped (P)	Ivuliwe, i-Te-doped (N), i-Ge-doped (P)
Ukuqondisa	100, 111	100, 111
Iphakheji	Awushadile	Awushadile
I-Epi-Ready	Yebo	Yebo

Amapharamitha kagesi we-Te Doped (N-Type):

Ukuhamba: 2000-5000 cm²/V·s
Ukungazweli: (1-1000) Ω·cm
I-EPD (Defect Density): ≤2000 amaphutha/cm²

Amapharamitha kagesi we-Ge Doped (P-Type):

Ukuhamba: 4000-8000 cm²/V·s
Ukungazweli: (0.5-5) Ω·cm

I-EPD (Defect Density): ≤2000 amaphutha/cm²

I-Q&A (Imibuzo Evame Ukubuzwa)

Q1: Iluphi uhlobo lwe-doping olufanele lwezinhlelo zokusebenza zokuthola i-infrared?

A1:I-Te-doped (N-uhlobo)ama-wafers ngokuvamile ayinketho efanelekile yezinhlelo zokusebenza zokubona i-infrared, njengoba enikeza ukuhamba kwe-electron ephezulu kanye nokusebenza okuhle kakhulu kuzitholi ze-infrared infrared (MWIR) emaphakathi ne-wavelength kanye nezinhlelo zokucabanga.

Q2: Ngingakwazi ukusebenzisa lezi ziphazamisi ezinhlelweni zikagesi ezinesivinini esikhulu?

A2: Yebo, amawafa e-InSb, ikakhulukazi lawo anawoI-N-uhlobo lwe-dopingkanye ne100 orientation, zifaneleka kahle kuma-electronics anesivinini esiphezulu njengama-transistors, amadivaysi omthombo we-quantum, kanye nezingxenye ze-optoelectronic ngenxa yokuhamba kwazo okuphezulu kwama-electron.

Q3: Yimuphi umehluko phakathi kwe-100 kanye ne-111 orientation yama-wafer e-InSb?

A3: eya100i-orientation ivame ukusetshenziswa kumadivayisi adinga ukusebenza kwe-elekthronikhi enesivinini esikhulu, kuyilapho111umumo uvame ukusetshenziselwa izinhlelo zokusebenza ezithile ezidinga izici ezihlukile zikagesi noma ze-optical, okuhlanganisa amadivayisi athile e-optoelectronic nezinzwa.

Q4: Yini ukubaluleka kwesici se-Epi-Ready kuma-wafers e-InSb?

A4: eyaI-Epi-Readyisici sisho ukuthi isicwecwana silashwe kusengaphambili ngezinqubo zokufakwa kwe-epitaxial. Lokhu kubalulekile ezinhlelweni ezidinga ukukhula kwezingqimba ezengeziwe zezinto ezingaphezulu kwe-wafer, njengokukhiqizwa kwe-semiconductor ethuthukisiwe noma amadivayisi we-optoelectronic.

Q5: Yiziphi izinhlelo zokusebenza ezijwayelekile zamawafa e-InSb emkhakheni wobuchwepheshe be-infrared?

I-A5: Amawafa e-InSb asetshenziswa ngokuyinhloko ekutholeni i-infrared, imaging eshisayo, amasistimu okubona ebusuku, nobunye ubuchwepheshe bokuzwa kwe-infrared. Ukuzwela kwabo okuphezulu nomsindo ophansi kubenza balungelei-infrared ye-wavelength emaphakathi (MWIR)imitshina.

I-Q6: Ubukhulu be-wafer buthinta kanjani ukusebenza kwayo?

I-A6: Ubukhulu be-wafer budlala indima ebalulekile ekuzinzeni kwayo kwemishini kanye nezici zikagesi. Ama-wafer azacile avame ukusetshenziswa ezinhlelweni ezibucayi kakhulu lapho kudingeka khona ukulawula okunembayo phezu kwezinto ezibonakalayo, kuyilapho amawafa aqinile ahlinzeka ngokuqina okuthuthukisiwe kwezinye izinhlelo zokusebenza zezimboni.

Q7: Ngingawukhetha kanjani usayizi we-wafer ofanele wohlelo lwami lokusebenza?

A7: Usayizi we-wafer ofanelekile uncike kudivayisi ethile noma isistimu eyakhiwe. Amawafa amancane (amayintshi angu-2) avame ukusetshenziselwa ucwaningo nasezinhlelweni zesilinganiso esincane, kuyilapho amawafa amakhulu (amayintshi angu-3) ngokuvamile asetshenziselwa ukukhiqizwa ngobuningi kanye namadivayisi amakhulu adinga impahla eyengeziwe.

Isiphetho

Ama-wafers e-InSb ngaphakathi2-intshifuthi3-intshiosayizi, ngekwehlisiwe, N-uhlobo, futhiUhlobo lwe-Pukuhlukahluka, kuyigugu kakhulu ku-semiconductor kanye nezinhlelo zokusebenza ze-optoelectronic, ikakhulukazi kumasistimu okuthola i-infrared. I100futhi111Iziqondiso zinikeza ukuguquguquka kwezidingo ezihlukahlukene zobuchwepheshe, kusukela kuma-electronics anesivinini esikhulu kuya kumasistimu eimaging ye-infrared. Ngokuhamba kwawo kwe-electron okukhethekile, umsindo ophansi, kanye nekhwalithi eqondile yangaphezulu, lawa mawafa alungele ukusetshenziswa.ama-mid-wavelength infrared detectorsnezinye izinhlelo zokusebenza ezisebenza kahle kakhulu.