Ama-wafer e-Indium Antimonide (InSb) N uhlobo P uhlobo lwe-Epi elungile engalungisiwe I-Doped noma i-Ge doped 2inch 3inch 4inch amawafa ukuqina kwe-Indium Antimonide (InSb)
Izici
Izinketho ze-Doping:
1.Kwehlisiwe:Lawa mawafa awanawo ama-ejenti we-doping, okuwenza alungele izinhlelo zokusebenza ezikhethekile ezifana nokukhula kwe-epitaxial.
2.Te Doped (N-Type):I-Tellurium (Te) doping ivamise ukusetshenziselwa ukwakha amawafa ohlobo lwe-N, alungele izinhlelo zokusebenza ezinjengezitholi ze-infrared kanye nogesi wesivinini esikhulu.
3.Ge Doped (P-Type):I-Germanium (Ge) doping isetshenziselwa ukwakha amawafa ohlobo lwe-P, anikeza ukuhamba kwezimbobo eziphezulu ezinhlelweni ezithuthukisiwe ze-semiconductor.
Izinketho zikasayizi:
1.Itholakala ngo-2-intshi, 3-intshi, no-4-intshi ububanzi. Lawa mawafa abhekelela izidingo ezahlukene zobuchwepheshe, kusukela ocwaningweni nasekuthuthukisweni kuya ekukhiqizeni okukhulu.
2.Ukubekezelela okunembile kobubanzi kuqinisekisa ukuvumelana kuzo zonke iziqephu, ezinobubanzi obungu-50.8±0.3mm (kumawafa angama-intshi angu-2) kanye no-76.2±0.3mm (kumawafa angama-intshi angu-3).
Ukulawula Ukuqina:
1.Amawafa ayatholakala anogqinsi luka-500±5μm ukuze asebenze kahle ezinhlelweni ezihlukahlukene.
2.Izilinganiso ezengeziwe ezifana ne-TTV (Total Thickness Variation), BOW, ne-Warp zilawulwa ngokucophelela ukuze kuqinisekiswe ukufana okuphezulu kanye nekhwalithi.
Ikhwalithi Yobuso:
1.Ama-wafers afika nendawo epholishiwe/eqoshwe ukuze kuthuthukiswe ukusebenza kwe-optical kanye nogesi.
2.Lezi zindawo ezingaphezulu zilungele ukukhula kwe-epitaxial, zinikeza isisekelo esibushelelezi sokucubungula okwengeziwe kumadivayisi asebenza kahle kakhulu.
I-Epi-Ready:
1.Amawafa e-InSb aselungele i-epi, okusho ukuthi alashelwa kusengaphambili izinqubo zokufakwa kwe-epitaxial. Lokhu kuzenza zilungele ukusetshenziswa ekukhiqizeni i-semiconductor lapho izingqimba ze-epitaxial zidinga ukukhuliswa phezu kwe-wafer.
Izinhlelo zokusebenza
1.Izihloli ze-Infrared:Amawafa e-InSb avame ukusetshenziswa ekutholweni kwe-infrared (IR), ikakhulukazi ebangeni le-mid-wavelength infrared (MWIR). Lawa mawafa abalulekile ekuboneni ebusuku, ekuthwebuleni izithombe ezishisayo, nasekusetshenzisweni kwe-infrared spectroscopy.
2.I-High-Speed Electronics:Ngenxa yokuhamba kwawo kwama-electron aphezulu, amawafa e-InSb asetshenziswa kumishini ye-elekthronikhi enesivinini esiphezulu njengama-high-frequency transistors, amadivaysi emithombo ye-quantum, nama-high-electron mobility transistors (HEMTs).
3. Amadivayisi we-Quantum Well:I-bandgap ewumngcingo kanye nokuhamba kahle kwama-electron kwenza ama-wafer e-InSb afanelekele ukusetshenziswa kumishini yomthombo we-quantum. Lawa madivayisi ayizingxenye ezibalulekile kuma-lasers, izitholi, nezinye izinhlelo ze-optoelectronic.
4.Spintronic Devices:I-InSb iphinde ihlolwe ezinhlelweni ze-spintronic, lapho i-electron spin isetshenziselwa ukucubungula ulwazi. Ukuhlanganisa okuphansi kwe-spin-orbit kuyenza ifaneleke kulawa madivayisi asebenza kahle kakhulu.
5.Terahertz (THz) Izicelo Zemisebe:Amadivayisi asekelwe ku-InSb asetshenziswa ezinhlelweni zemisebe ye-THz, okufaka phakathi ucwaningo lwesayensi, ukuthwebula izithombe, kanye nezimpawu zezinto ezibonakalayo. Bavumela ubuchwepheshe obuthuthukisiwe obufana ne-THz spectroscopy kanye nezinhlelo zokucabanga ze-THz.
6.Amadivayisi we-Thermoelectric:Izakhiwo ezihlukile ze-InSb ziyenza ibe into ekhangayo ezinhlelweni zikagesi we-thermoelectric, lapho ingasetshenziswa khona ukuguqula ukushisa kube ugesi kahle, ikakhulukazi ezinhlelweni ze-niche ezifana nobuchwepheshe besikhala noma ukukhiqizwa kwamandla ezindaweni eziyingozi kakhulu.
Amapharamitha womkhiqizo
| Ipharamitha | 2-intshi | 3-intshi | 4-intshi |
| Ububanzi | 50.8±0.3mm | 76.2±0.3mm | - |
| Ubukhulu | 500±5μm | 650±5μm | - |
| Ubuso | Kupholishiwe/Kuqoshwe | Kupholishiwe/Kuqoshwe | Kupholishiwe/Kuqoshwe |
| Uhlobo lweDoping | Ivuliwe, i-Te-doped (N), i-Ge-doped (P) | Ivuliwe, i-Te-doped (N), i-Ge-doped (P) | Ivuliwe, i-Te-doped (N), i-Ge-doped (P) |
| Ukuqondisa | (100) | (100) | (100) |
| Iphakheji | Awushadile | Awushadile | Awushadile |
| I-Epi-Ready | Yebo | Yebo | Yebo |
Amapharamitha kagesi we-Te Doped (N-Type):
- Ukuhamba: 2000-5000 cm²/V·s
- Ukungazweli: (1-1000) Ω·cm
- I-EPD (Defect Density): ≤2000 amaphutha/cm²
Amapharamitha kagesi we-Ge Doped (P-Type):
- Ukuhamba: 4000-8000 cm²/V·s
- Ukungazweli: (0.5-5) Ω·cm
- I-EPD (Defect Density): ≤2000 amaphutha/cm²
Isiphetho
Ama-wafer e-Indium Antimonide (InSb) ayimpahla ebalulekile enhlobonhlobo yezinhlelo zokusebenza ezisebenza kahle kakhulu emikhakheni ye-electronics, optoelectronics, kanye nobuchwepheshe be-infrared. Ngokuhamba kwawo okuhle kakhulu kwama-electron, ukuhlangana okuphansi kwe-spin-orbit, kanye nezinhlobonhlobo zezinketho zokudotshwa (i-Te yohlobo lwe-N, i-Ge yohlobo lwe-P), ama-wafer e-InSb alungele ukusetshenziswa kumadivayisi anjengama-infrared detectors, ama-transistor anesivinini esikhulu, amadivaysi emithombo ye-quantum, namadivayisi we-spitronic.
Amawafa atholakala ngosayizi abahlukahlukene (2-intshi, 3-intshi, no-4-intshi), anokulawula ukujiya okunembe nezindawo ezilungele ama-epi, okuqinisekisa ukuthi ahlangabezana nezidingo ezinzima zokwenziwa kwesimanjemanje kwe-semiconductor. Lawa mawafa alungele ukusetshenziswa emikhakheni efana nokutholwa kwe-IR, izinto zikagesi ezinesivinini esikhulu, nemisebe ye-THz, evumela ubuchwepheshe obuthuthukisiwe ocwaningweni, embonini, nasekuvikeleni.
Umdwebo onemininingwane
