I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm ye-Power Electronics

Incazelo emfushane:

I-wafer ye-HPSI (High-Purity Silicon Carbide) SiC enobubanzi obungamasentimitha angu-3 kanye nobukhulu obungu-350 µm ± 25 µm yenzelwe ngqo izinhlelo zokusebenza ze-elekthronikhi zamandla ezidinga ama-substrate asebenza kahle kakhulu. Le wafer ye-SiC inikeza ukuhanjiswa kokushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye nokusebenza kahle emazingeni okushisa aphezulu okusebenza, okwenza kube ukukhetha okuhle kwesidingo esikhulayo samadivayisi kagesi asebenza kahle futhi aqinile. Ama-wafer e-SiC afaneleka kakhulu ezinhlelweni zokusebenza ze-voltage ephezulu, i-high-current, kanye ne-frequency ephezulu, lapho ama-substrate e-silicon endabuko ehluleka ukuhlangabezana nezidingo zokusebenza.
I-wafer yethu ye-HPSI SiC, eyenziwe kusetshenziswa amasu akamuva ahamba phambili embonini, itholakala ngamamaki amaningana, ngalinye lenzelwe ukuhlangabezana nezidingo ezithile zokukhiqiza. I-wafer ibonisa ubuqotho besakhiwo obuvelele, izakhiwo zikagesi, kanye nekhwalithi yobuso, okuqinisekisa ukuthi ingaletha ukusebenza okuthembekile ezinhlelweni ezidinga kakhulu, kufaka phakathi ama-semiconductor kagesi, izimoto zikagesi (ama-EV), izinhlelo zamandla avuselelekayo, kanye nokuguqulwa kwamandla ezimboni.

Sithumelele i-imeyili

Izici

Isicelo

Ama-wafer e-HPSI SiC asetshenziswa ezinhlobonhlobo zezinhlelo zokusebenza ze-elekthronikhi zamandla, okuhlanganisa:

Ama-Semiconductor Amandla:Ama-wafer e-SiC avame ukusetshenziswa ekukhiqizweni kwama-diode kagesi, ama-transistors (ama-MOSFET, ama-IGBT), kanye nama-thyristors. Lawa ma-semiconductor asetshenziswa kabanzi ezinhlelweni zokuguqulwa kwamandla ezidinga ukusebenza kahle okuphezulu nokuthembeka, njengakuma-drive ezimoto zezimboni, izinsiza zikagesi, kanye nama-inverter ezinhlelo zamandla avuselelekayo.
Izimoto Zikagesi (ama-EV):Ezinjinini zikagesi zezimoto zikagesi, amadivayisi kagesi asekelwe ku-SiC ahlinzeka ngesivinini sokushintsha esisheshayo, ukusebenza kahle kwamandla okuphezulu, kanye nokulahlekelwa kokushisa okuncishisiwe. Izingxenye ze-SiC zilungele ukusetshenziswa ezinhlelweni zokuphatha ibhethri (i-BMS), ingqalasizinda yokushaja, kanye namashaja asebhodini (ama-OBC), lapho ukunciphisa isisindo kanye nokwandisa ukusebenza kahle kokuguqulwa kwamandla kubalulekile.

Izinhlelo Zamandla Avuselelekayo:Ama-wafer e-SiC asetshenziswa kakhulu kuma-solar inverters, kuma-generator e-wind turbine, kanye nezinhlelo zokugcina amandla, lapho ukusebenza kahle okuphezulu nokuqina kubalulekile khona. Izingxenye ezisekelwe ku-SiC zivumela amandla amaningi kanye nokusebenza okuthuthukisiwe kulezi zinhlelo zokusebenza, okuthuthukisa ukusebenza kahle kokuguqulwa kwamandla jikelele.

Amandla kagesi ezimboni:Ezisetshenzisweni zezimboni ezisebenza kahle kakhulu, njengezimoto zokushayela, amarobhothi, kanye nezinsiza zikagesi ezinkulu, ukusetshenziswa kwama-wafer e-SiC kuvumela ukusebenza okuthuthukisiwe maqondana nokusebenza kahle, ukuthembeka, kanye nokuphathwa kokushisa. Amadivayisi e-SiC angaphatha amaza okushintsha aphezulu kanye namazinga okushisa aphezulu, okwenza afaneleke ezindaweni ezidinga amandla amaningi.

Izikhungo Zokuxhumana Nedatha:I-SiC isetshenziswa ekuhlinzekeni kwamandla emishini yokuxhumana kanye nezikhungo zedatha, lapho ukuthembeka okuphezulu kanye nokuguqulwa kwamandla okusebenzayo kubalulekile khona. Amadivayisi kagesi asekelwe ku-SiC avumela ukusebenza kahle okuphezulu ngobukhulu obuncane, okuholela ekunciphiseni ukusetshenziswa kwamandla kanye nokusebenza kahle kokupholisa ezingqalasizinda ezinkulu.

I-voltage ephezulu yokuqhekeka, ukumelana okuphansi, kanye nokushisa okuhle kakhulu kwama-wafer e-SiC kuwenza abe yindawo efanelekile yalezi zinhlelo zokusebenza ezithuthukisiwe, okuvumela ukuthuthukiswa kwama-electronics kagesi asebenzisa amandla ngendlela eyonga isizukulwane esilandelayo.

Izakhiwo

Impahla	Inani
Ububanzi be-Wafer	Amasentimitha angu-3 (76.2 mm)
Ubukhulu be-Wafer	350 µm ± 25 µm
Ukuqondiswa kwe-Wafer	<0001> ku-axis ± 0.5°
Ubuningi be-Micropipe (MPD)	≤ 1 cm⁻²
Ukumelana Nogesi	≥ 1E7 Ω·cm
I-Dopant	Kuhlehlisiwe
Ukuqondiswa Okuyisisekelo Okuyisicaba	{11-20} ± 5.0°
Ubude Obuphansi Obuyinhloko	32.5 mm ± 3.0 mm
Ubude Besibili Obuyisicaba	18.0 mm ± 2.0 mm
Ukuqondiswa Kwesibili Okuyisicaba	Uma ubheke phezulu: 90° CW kusukela efulethini eliyinhloko ± 5.0°
Ukukhishwa Komphetho	3 mm
I-LTV/TTV/Umnsalo/I-Warp	3 µm / 10 µm / ±30 µm / 40 µm
Ubulukhuni Bomphezulu	Ubuso be-C: Obucwebezelayo, ubuso be-Si: CMP
Imifantu (ihlolwa ngokukhanya okunamandla aphezulu)	Akukho
Amapuleti e-Hex (ahlolwa ngokukhanya okuphezulu)	Akukho
Izindawo ze-Polytype (zihlolwa ngokukhanya okuphezulu)	Indawo ehlanganisiwe 5%
Ukuklwebheka (kuhlolwe ngokukhanya okunamandla aphezulu)	≤ imihuzuko emi-5, ubude obuhlanganisiwe ≤ 150 mm
Ukuqhekeka Komphetho	Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.5 mm
Ukungcoliswa Komphezulu (kuhlolwe ngokukhanya okunamandla aphezulu)	Akukho

Izinzuzo Eziyinhloko

Ukushisa Okuphezulu:Ama-wafer e-SiC aziwa ngekhono lawo eliyingqayizivele lokususa ukushisa, okuvumela amadivayisi kagesi ukuthi asebenze kahle kakhulu futhi aphathe amaza aphezulu ngaphandle kokushisa ngokweqile. Lesi sici sibalulekile kuma-electronics kagesi lapho ukuphathwa kokushisa kuyinselele enkulu.
I-Voltage Ephezulu Yokuqhekeka:Igebe elikhulu le-SiC lenza amadivayisi akwazi ukubekezelela amazinga aphezulu kagesi, okwenza afaneleke kakhulu ekusetshenzisweni kwamandla kagesi aphezulu njengamagridi kagesi, izimoto zikagesi, kanye nemishini yezimboni.
Ukusebenza Kahle Okuphezulu:Ukuhlanganiswa kwamaza okushintsha aphezulu kanye nokumelana okuphansi kuphumela kumadivayisi anokulahlekelwa amandla okuphansi, okuthuthukisa ukusebenza kahle kokuguqulwa kwamandla kanye nokunciphisa isidingo sezinhlelo zokupholisa eziyinkimbinkimbi.
Ukuthembeka Ezindaweni Ezinzima:I-SiC iyakwazi ukusebenza emazingeni okushisa aphezulu (kufika ku-600°C), okwenza ifaneleke ukusetshenziswa ezindaweni ebezizolimaza amadivayisi endabuko asekelwe ku-silicon.
Ukonga Amandla:Amadivayisi kagesi e-SiC athuthukisa ukusebenza kahle kokuguqulwa kwamandla, okubaluleke kakhulu ekunciphiseni ukusetshenziswa kwamandla, ikakhulukazi ezinhlelweni ezinkulu njengeziguquli zamandla ezimboni, izimoto zikagesi, kanye nengqalasizinda yamandla avuselelekayo.