I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics

I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm yesithombe esifakiwe se-Power Electronics

Incazelo emfushane:

Iwafa ye-HPSI (High-Purity Silicon Carbide) SiC enobubanzi obungamayintshi angu-3 kanye nogqinsi lwama-350 µm ± 25 µm yakhelwe ngokuqondile izinhlelo zokusebenza zama-electronics adinga ama-substrate asebenza kahle kakhulu. Lesi sicwecwana se-SiC sinikeza ukuguquguquka okushisayo okuphakeme, ugesi wokuwohloka okuphezulu, nokusebenza kahle emazingeni okushisa aphezulu okusebenza, okuyenza ibe ukukhetha okuhle kwesidingo esikhulayo samadivayisi kagesi awonga amandla futhi aqinile. Ama-wafers e-SiC afaneleka kakhulu ukusetshenziswa kwamandla kagesi aphezulu, amanje, kanye namaza aphakeme, lapho ama-silicon substrates endabuko ehluleka ukuhlangabezana nezidingo zokusebenza.
Iwafa yethu ye-HPSI SiC, eyakhiwe kusetshenziswa amasu akamuva ahamba phambili embonini, itholakala ngamamaki ambalwa, ngalinye liklanyelwe ukuhlangabezana nezidingo ezithile zokukhiqiza. I-wafer ibonisa ubuqotho besakhiwo obuvelele, izakhiwo zikagesi, nekhwalithi yangaphezulu, iqinisekisa ukuthi ingaletha ukusebenza okuthembekile ezinhlelweni ezifunwayo, okuhlanganisa ama-semiconductors kagesi, izimoto zikagesi (EVs), izinhlelo zamandla avuselelekayo, nokuguqulwa kwamandla ezimboni.

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Isicelo

Ama-wafer e-HPSI SiC asetshenziswa ezinhlobonhlobo zezinhlelo zokusebenza zamandla kagesi, okuhlanganisa:

Ama-Semiconductors Amandla:Ama-wafers e-SiC avame ukusetshenziswa ekukhiqizeni amandla e-diode, ama-transistors (ama-MOSFET, ama-IGBT), nama-thyristors. Lawa ma-semiconductors asetshenziswa kakhulu ezinhlelweni zokuguqula amandla ezidinga ukusebenza kahle okuphezulu nokuthembeka, njengakumadrayivu ezimoto zezimboni, izinsiza zikagesi, nama-inverter wezinhlelo zamandla avuselelekayo.
Izimoto zikagesi (EVs):Kuma-powertrains emoto kagesi, amadivayisi kagesi asekelwe ku-SiC ahlinzeka ngesivinini sokushintsha ngokushesha, ukusebenza kahle kwamandla okuphezulu, kanye nokulahlekelwa okuncishisiwe kokushisa. Izingxenye ze-SiC zilungele izinhlelo zokusebenza ezinhlelweni zokuphatha ibhethri (i-BMS), ingqalasizinda yokushaja, namashaja angaphakathi ebhodini (ama-OBC), lapho ukunciphisa isisindo nokwandisa ukusebenza kahle kokuguqulwa kwamandla kubalulekile.

Amasistimu Amandla Avuselelekayo:Ama-wafer e-SiC asetshenziswa kakhulu kuma-solar inverters, amajeneretha enjini yomoya, nezinhlelo zokugcina amandla, lapho ukusebenza kahle okuphezulu nokuqina kubalulekile. Izingxenye ezisekelwe ku-SiC zinika amandla ukuminyana kwamandla aphezulu kanye nokusebenza okuthuthukisiwe kulezi zinhlelo zokusebenza, ukuthuthukisa ukusebenza kahle kokuguqulwa kwamandla.

I-Industrial Power Electronics:Ezinhlelweni zokusebenza zezimboni ezisebenza kahle kakhulu, ezinjengokushayela kwezimoto, amarobhothi, kanye nempahla yamandla amakhulu, ukusetshenziswa kwama-wafers e-SiC kuvumela ukusebenza okuthuthukisiwe mayelana nokusebenza kahle, ukwethembeka, nokuphatha okushisayo. Amadivayisi we-SiC angakwazi ukuphatha amaza okushintshashintsha aphezulu kanye namazinga okushisa aphezulu, awenze afanelekele izindawo ezifunayo.

Izikhungo Zezokuxhumana Nedatha:I-SiC isetshenziswa ezintweni zikagesi kumishini yezokuxhumana kanye nezikhungo zedatha, lapho ukuthembeka okuphezulu nokuguqulwa kwamandla okusebenzayo kubalulekile. Amadivayisi kagesi asekelwe ku-SiC anika amandla ukusebenza kahle okuphezulu kumasayizi amancane, okuhumushela ekusetshenzisweni kwamandla okuncishisiwe kanye nokusebenza kahle kokupholisa okungcono kungqalasizinda yezinga elikhulu.

I-voltage ephezulu yokuphuka, ukumelana okuphansi, kanye nokuhamba kahle kokushisayo kwamawafa e-SiC kuwenza abe i-substrate efanelekile yalezi zinhlelo zokusebenza ezithuthukisiwe, okuvumela ukuthuthukiswa kwesizukulwane esilandelayo sama-electronics awonga amandla.

Izakhiwo

Impahla	Inani
I-Wafer Diameter	3 amayintshi (76.2 mm)
Ubukhulu be-Wafer	350 µm ± 25 µm
I-Wafer Orientation	<0001> ku-eksisi ± 0.5°
I-Micropipe Density (MPD)	≤ 1 cm⁻²
Ukungazweli Kagesi	≥ 1E7 Ω·cm
I-Dopant	Kuhlehlisiwe
Isisekelo se-Flat Orientation	{11-20} ± 5.0°
Ubude Befulethi obuyisisekelo	32.5 mm ± 3.0 mm
Ubude Befulethi besibili	18.0 mm ± 2.0 mm
I-Flat Orientation yesibili	Ubheke phezulu: 90° CW ukusuka efulethini lokuqala ± 5.0°
Ukukhishwa komkhawulo	3 mm
LTV/TTV/Bow/Warp	3 µm / 10 µm / ±30 µm / 40 µm
Ukuqina Kobuso	Ubuso buka-C: bupholishiwe, ubuso be-Si: CMP
Imifantu (ihlolwe ngokukhanya okukhulu)	Lutho
I-Hex Plates (ihlolwe ngokukhanya okuphezulu)	Lutho
Izindawo ze-Polytype (zihlolwe ngokukhanya okukhulu)	Indawo ehlanganisiwe 5%
Ama-scratches (ahlolwe ngokukhanya okukhulu)	≤ 5 imihuzuko, ubude obukhulayo ≤ 150 mm
I-Edge Chipping	Akukho okuvunyelwe ≥ 0.5 mm ububanzi nokujula
I-Surface Contamination (ihlolwe ngokukhanya okukhulu)	Lutho

Izinzuzo Eziyinhloko

High Thermal Conductivity:Ama-wafer e-SiC aziwa ngekhono lawo eliyingqayizivele lokuqeda ukushisa, okuvumela amadivayisi kagesi ukuthi asebenze ngendlela esezingeni eliphezulu futhi aphathe imisinga ephakeme ngaphandle kokushisisa ngokweqile. Lesi sici sibalulekile kuma-electronics wamandla lapho ukuphathwa kokushisa kuyinselele enkulu.
I-Voltage Yokuhlukaniswa Okuphezulu:I-bandgap ebanzi ye-SiC yenza amadivaysi akwazi ukubekezelela amazinga kagesi aphezulu, okuwenza alungele ukusetshenziswa kwamandla kagesi aphezulu njengamagridi kagesi, izimoto zikagesi, nemishini yezimboni.
Ukusebenza Okuphezulu:Inhlanganisela yamafrikhwensi okushintsha okuphezulu kanye nokumelana okuphansi kuholela emishinini elahlekelwa amandla aphansi, ithuthukisa ukusebenza kahle kukonke kokuguqulwa kwamandla kanye nokunciphisa isidingo samasistimu okupholisa ayinkimbinkimbi.
Ukwethembeka Ezimweni Ezinzima:I-SiC iyakwazi ukusebenza emazingeni okushisa aphezulu (kufika ku-600°C), okuyenza ifanelekele ukusetshenziswa ezindaweni ezingalimaza izinto zendabuko ezisekelwe ku-silicon.
Ukonga Amandla:Amadivayisi kagesi e-SiC athuthukisa ukusebenza kahle kokuguqulwa kwamandla, okubalulekile ekwehliseni ukusetshenziswa kwamandla, ikakhulukazi ezinhlelweni ezinkulu ezifana neziguquli zamandla ezimboni, izimoto zikagesi, nengqalasizinda yamandla avuselelekayo.