Ilensi ye-High Purity SiC Optical Cubic 4H-semi 6SP Usayizi Owenziwe Ngokwezifiso

Incazelo emfushane:

Amalensi e-SiC (amalensi e-silicon carbide optical) ayizingxenye zokukhanya eziqondile ezenziwe nge-silicon carbide (SiC) emsulwa kakhulu, enikeza izakhiwo ze-physicochemical ezivelele kanye nokusebenza kokukhanya. Abonakala ngokuqhutshwa kokushisa okuphezulu kakhulu (490 W/m·K), i-coefficient ephansi yokwanda kokushisa (4.0×10⁻⁶/K), kanye nokuzinza kwemvelo okuvelele, amalensi e-SiC abe yisinqumo esihle kakhulu sezinhlelo zokukhanya ezisebenza ezimweni ezimbi kakhulu. Lawa malensi abonisa ukusebenza okuhle kakhulu kokudlulisa (ukudluliselwa okungagqokwanga >70%) ku-ultraviolet kuya kuma-wavelengths e-infrared akude (0.2-6 μm), okwenza afaneleke kakhulu ezinhlelweni ze-laser ezinamandla aphezulu, i-space optics, kanye ne-optical imaging ezindaweni zezimboni ezinzima.

 

Inqubo yokukhiqiza amalensi e-SiC ihilela ukugaya ngokunemba, ukupholisha ngokunemba okukhulu, kanye nokwelashwa okukhethekile kokumboza ukuze kufezwe izindawo ezibonakalayo ngokunemba kwe-nanoscale (ubulukhuni bomphezulu <1 nm). Amajiyometri enziwe ngokwezifiso afaka phakathi izindawo ezi-aspheric nezikhululekile angenziwa ukuze kuhlangatshezwane nezidingo zomklamo wezinhlelo ze-optical ezinemba kakhulu.


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  • Izici

    Izici ze-SiC Optical Lens

    1. Ukuphakama Kwezinto Ezibonakalayo

    Ukuzivumelanisa Nezimo Ezimbi Kakhulu: Imelana namazinga okushisa angaphezu kuka-1500°C, ukugqwala okunamandla kwe-asidi/alkali, kanye nemisebe enamandla aphezulu, okulungele izindiza zasemkhathini kanye nezikhungo zenuzi.

    Amandla Okusebenza Angavamile: Ubulukhuni obuseduze nedayimane (Mohs 9.5), amandla okuguquguquka >400 MPa, kanye nokumelana nokushaya okudlula kakhulu ingilazi evamile yokukhanya.

    Ukuzinza Kokushisa: Ukushisa okuphezulu okungu-100× kune-silica ehlanganisiwe, ene-CTE engu-1/10 nje wengilazi evamile, okuqinisekisa ukuzinza ngaphansi kokujikeleza okusheshayo kokushisa.

    2. Izinzuzo Zokusebenza Okubonakalayo

    Ukudluliselwa kwe-spectral okubanzi (0.2-6 μm); izembozo ezikhethekile zingathuthukisa ukudluliselwa kufike ku->95% kuma-band athile (isb., 3-5 μm mid-IR).

    Ukulahlekelwa okuphansi kokusabalala (<0.5%/cm), ukuqeda ubuso kufikela ku-10/5 standard-dig standard, kanye nokuba yisicaba kobuso okungu-λ/10@633 nm.

    Umkhawulo womonakalo obangelwa yi-laser ophezulu (i-LIDT) >15 J/cm² (1064 nm, 10 ns pulses), ofanele izinhlelo zokugxila kwe-laser ezinamandla aphezulu.

    3. Amakhono Okusebenza Ngokunemba

    Isekela izindawo eziyinkimbinkimbi (ezingenasiphetho, ezikhululekile) ngokunemba kwesimo <100 nm PV kanye nokugxila <1 arcmin.

    Iyakwazi ukwakha amalensi amakhulu e-SiC (ububanzi >500 mm) amatheleskopu ezinkanyezi kanye ne-space optics.

    Izicelo Eziyinhloko Zelensi Yokukhanya ye-SiC

    1. I-Space Optics kanye Nokuzivikela

    Amalensi okuzwa akude kwesathelayithi kanye ne-optics ye-telescope yasemkhathini, esebenzisa izakhiwo ezilula ze-SiC (ubuningi obungu-3.21 g/cm³) kanye nokumelana nemisebe.

    Amafasitela abonakalayo asebenzisa imishini yokufuna imicibisholo, afudumeza umoya (>1000°C) ngesikhathi sokundiza kwe-hypersonic.

    2. Izinhlelo Ze-Laser Ezinamandla Aphezulu

    Amalensi okugxila emishini yokusika/yokushisela nge-laser yezimboni, agcina ukuchayeka isikhathi eside kuma-laser aqhubekayo ekilasini le-kW.

    Izinto ezibumba imisebe ezinhlelweni ze-inertial confinement fusion (ICF), okuqinisekisa ukudluliswa okunembile kwe-laser enamandla aphezulu.

    3. Ukukhiqiza i-Semiconductor kanye ne-Precision

    Izisekelo zesibuko se-SiC ze-EUV lithography optics, ezinokuguquguquka kokushisa <1 nm ngaphansi kwe-10 kW/m² ukushisa okugelezayo.

    Amalensi kagesi amathuluzi okuhlola i-e-beam, asebenzisa i-SiC's conductivity ukulawula izinga lokushisa okusebenzayo.

    4. Ukuhlolwa Kwezimboni kanye Namandla

    Amalensi e-Endoscope ezithando zokushisa okuphezulu (ukusebenza okuqhubekayo okungu-1500°C).

    Izingxenye ze-infrared optical zezinsimbi zokufaka imigodi yamafutha, ezimelana nokucindezela kwemigodi engaphansi komhlaba (>100 MPa) kanye nemidiya ebolile.

    Izinzuzo Eziyinhloko Zokuncintisana

    1. Ubuholi Bokusebenza Obuphelele
    Amalensi e-SiC adlula izinto zokukhanya zendabuko (i-fused silica, i-ZnSe) ekuzinzeni kokushisa/okwemishini/kwamakhemikhali, ngezakhiwo zawo "zokuqhuba okuphezulu + ukwanda okuphansi" ezixazulula izinselele zokuguquguquka kokushisa kuma-optic amakhulu.

    2. Ukusebenza Kahle Kwezindleko Zomjikelezo Wempilo
    Nakuba izindleko zokuqala ziphakeme, isikhathi eside sesevisi yamalensi e-SiC (ingilazi evamile engu-5-10×) kanye nokusebenza ngaphandle kokunakekelwa kunciphisa kakhulu izindleko eziphelele zobunikazi (i-TCO).

    3. Inkululeko Yokuklama
    Izinqubo eziboshwe yi-reaction noma ze-CVD zivumela izakhiwo ze-optical ze-SiC ezilula (ama-honeycomb cores), zifinyelela izilinganiso zokuqina-nesisindo ezingenakuqhathaniswa.

    Amakhono Esevisi ye-XKH

    1. Izinsizakalo Zokukhiqiza Ngokwezifiso

    Izixazululo ezisuka ekugcineni ziye ekugcineni kusukela ekuklanyweni kokukhanya (ukulingiswa kwe-Zemax/Code V) kuya ekulethweni kokugcina, okusekela izindawo ezikhululekile ze-parabolic ezi-aspheric/off-axis.

    Izembozo ezikhethekile: i-anti-reflection (AR), i-carbon efana nedayimane (LIDT>50 J/cm²), i-ITO eqhubayo, njll.

    2. Izinhlelo Zokuqinisekisa Ikhwalithi

    Imishini ye-Metrology ehlanganisa ama-interferometer e-4D kanye namaphrofayili okukhanya okumhlophe aqinisekisa ukunemba kwendawo okungu-λ/20.

    I-QC yezinga lezinto: Ukuhlaziywa kokuqondiswa kwe-crystallographic kwe-XRD kuyo yonke i-SiC engenalutho.

    3. Izinsizakalo Ezenezelwe Inani

    Ukuhlaziywa kokuhlanganiswa kwe-thermo-structural (i-ANSYS simulation) ukuze kubikezelwe ukusebenza.

    Umklamo wokwenza ngcono isakhiwo sokufakwa kwelensi ye-SiC ehlanganisiwe.

    Isiphetho

    Amalensi e-SiC achaza kabusha imikhawulo yokusebenza kwezinhlelo ze-optical ezinembe kakhulu ngezakhiwo zawo zezinto ezingenakuqhathaniswa. Amakhono ethu ahlanganiswe ngokuqondile ekuhlanganisweni kwezinto ze-SiC, ukucutshungulwa kokunemba, kanye nokuhlolwa aletha izixazululo ze-optical ezishintshashintshayo zemikhakha yezindiza kanye neyokukhiqiza ethuthukisiwe. Ngokuthuthuka kokukhula kwekristalu ye-SiC, intuthuko yesikhathi esizayo izogxila ekuvulekeni okukhulu (>1m) kanye namajiyometri aphezulu ayinkimbinkimbi (ama-array angenawo uhlaka).

    Njengomkhiqizi ohamba phambili wezingxenye ze-optical ezithuthukisiwe, i-XKH igxile ezintweni ezisebenza kahle kakhulu kufaka phakathi i-sapphire, i-silicon carbide (SiC), kanye nama-silicon wafers, enikeza izixazululo eziqala kusukela ekucutshungulweni kwezinto ezingavuthiwe kuya ekuqedeni ngokunemba. Ubuchwepheshe bethu buhlanganisa:

    1. Ukwenziwa Ngokwezifiso: Ukulungiswa ngokunemba kwamajiyometri ayinkimbinkimbi (angenasiphepho, angenasimo) ngokubekezelelana okufika ku-±0.001mm

    2. Ukuguquguquka Kwezinto: Ukucubungula i-sapphire (amafasitela e-UV-IR), i-SiC (ama-optics anamandla aphezulu), kanye ne-silicon (IR/micro-optics)

    3. Izinsizakalo Ezenezelwe Inani:

    Izembozo ezingabonisi/ezihlala isikhathi eside (UV-FIR)

    Ukuqinisekiswa kwekhwalithi okusekelwa yi-Metrology (λ/20 flatness)

    Ukuhlanganiswa kwegumbi lokuhlanza kwezicelo ezizwela ukungcola

    Sisebenzela izimboni zezindiza, i-semiconductor, kanye ne-laser, sihlanganisa ubuchwepheshe besayensi yezinto ezibonakalayo nokukhiqiza okuthuthukisiwe ukuze sinikeze ama-optics amelana nezimo ezimbi kakhulu ngenkathi senza ngcono ukusebenza kwe-optical.

    Ilensi ye-SiC 4
    Ilensi ye-SiC 5
    Ilensi ye-SiC 6

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