I-GaN-on-Diamond Wafers 4inch 6inch Ingqikithi ye-epi ukujiya (micron) 0.6 ~ 2.5 noma enzelwe izinhlelo zokusebenza ze-High-Frequency

Incazelo emfushane:

Ama-wafers e-GaN-on-Diamond ayisixazululo esithuthukisiwe sezinto ezisetshenziswayo esidizayinelwe ukuvama okuphezulu, amandla aphezulu, kanye nezicelo ezisebenza kahle kakhulu, sihlanganisa izakhiwo eziphawulekayo ze-Gallium Nitride (GaN) nokuphathwa okushisayo kwe-Diamond. Lawa mawafa ayatholakala kuwo womabili amadayamitha angu-4-intshi no-6-intshi, anogqinsi lwe-epi olwenziwa ngokwezifiso olusuka ku-0.6 kuya ku-2.5 microns. Le nhlanganisela inikezela ngokukhipha ukushisa okuphezulu, ukuphatha amandla aphezulu, nokusebenza okuhle kakhulu kwemvamisa ephezulu, okuyenza ilungele izinhlelo zokusebenza ezifana nezikhulisamandla zamandla e-RF, i-radar, izinhlelo zokuxhumana ze-microwave, nezinye izinto zikagesi ezisebenza kahle kakhulu.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

Usayizi we-Wafer:
Itholakala ngobubanzi obungu-4 intshi no-6-intshi ukuze kuhlanganiswe izinto ezihlukahlukene ezinqubweni ezihlukahlukene zokukhiqiza ama-semiconductor.
Izinketho zokwenza ngokwezifiso ziyatholakala ngosayizi we-wafer, kuye ngezidingo zekhasimende.

Ugqinsi Lwesendlalelo se-Epitaxial:
Ibanga: 0.6 µm kuya ku-2.5 µm, nezinketho zogqinsi olwenziwe ngendlela oyifisayo ngokusekelwe ezidingweni ezithile zohlelo lokusebenza.
Isendlalelo se-epitaxial siklanyelwe ukuqinisekisa ukukhula kwekristalu ye-GaN yekhwalithi ephezulu, enogqinsi olulungiselelwe ukulinganisa amandla, impendulo yemvamisa, nokuphathwa kokushisayo.

I-Thermal Conductivity:
Isendlalelo sedayimane sihlinzeka ngokusebenza okushisayo okuphezulu kakhulu okungaba ngu-2000-2200 W/m·K, okuqinisekisa ukulahlwa kokushisa okusebenzayo okuvela kumadivayisi anamandla amakhulu.

Izakhiwo ze-GaN Material:
I-Bandgap ebanzi: Ungqimba lwe-GaN luzuza ku-bandgap ebanzi (~3.4 eV), evumela ukusebenza ezindaweni ezinokhahlo, amandla kagesi aphezulu, nezimo zezinga lokushisa eliphezulu.
I-Electron Mobility: Ukuhamba kwama-electron aphezulu (okungaba ngu-2000 cm²/V·s), okuholela ekushintsheni okusheshayo namaza okusebenza aphezulu.
I-High Breakdown Voltage: I-voltage yokuwohloka ye-GaN iphakeme kakhulu kunezinto ezivamile ze-semiconductor, okuyenza ifanelekele ukusetshenziswa kwamandla kagesi.

Ukusebenza kukagesi:
Ukuminyana Okuphezulu Kwamandla: Amawafa e-GaN-on-Diamond anika amandla amandla aphezulu kuyilapho egcina ifomu elincane, elilungele izikhulisamandla kanye nezinhlelo ze-RF.
Ukulahlekelwa Okuphansi: Inhlanganisela yokusebenza kahle kwe-GaN kanye nokunqanyulwa kokushisa kwedayimane kuholela ekulahlekeni okuphansi kwamandla ngesikhathi sokusebenza.

Ikhwalithi Yobuso:
Ukukhula Kwekhwalithi Ephezulu Ye-Epitaxial: Isendlalelo se-GaN sikhule ngokudlulele ku-substrate yedayimane, iqinisekisa ukuminyana okuncane kokugudluka, ikhwalithi yekristalu ephezulu, nokusebenza okuphelele kwedivayisi.

Ukufana:
Ukuqina Nokufana Kokwakheka: Kokubili ungqimba lwe-GaN nengxenye yedayimane igcina ukufana okuhle kakhulu, okubalulekile ekusebenzeni okungaguquki kwedivayisi nokuthembeka.

Ukuzinza Kwekhemikhali:
Kokubili i-GaN nedayimane kunikeza ukuqina kwamakhemikhali okukhethekile, okuvumela lawa mawafa ukuthi asebenze ngokuthembekile ezindaweni zamakhemikhali ezinokhahlo.

Izinhlelo zokusebenza

I-RF Power Amplifiers:
Amawafa e-GaN-on-Diamond alungele izikhulisamandla zamandla e-RF kwezokuxhumana, amasistimu e-radar, nokuxhumana ngesathelayithi, enikeza kokubili ukusebenza kahle okuphezulu nokuthembeka kumaza aphezulu (isb, 2 GHz kuya ku-20 GHz nangale kwalokho).

Ukuxhumana kweMicrowave:
Lawa mawafa ahamba phambili ezinhlelweni zokuxhumana ze-microwave, lapho ukuphuma kwamandla aphezulu kanye nokuwohloka kwamasignali okuncane kubalulekile.

I-Radar kanye Nobuchwepheshe Benzwa:
Amawafa e-GaN-on-Diamond asetshenziswa kakhulu ezinhlelweni ze-radar, ehlinzeka ngokusebenza okuqinile kuma-high-frequency kanye nezicelo zamandla aphezulu, ikakhulukazi emikhakheni yezempi, yezimoto, neye-aerospace.

Amasistimu wesathelayithi:
Ezinhlelweni zokuxhumana ngesathelayithi, lawa mawafa aqinisekisa ukuqina nokusebenza okuphezulu kwezikhulisi zamandla, ezikwazi ukusebenza ezimweni ezimbi kakhulu zemvelo.

I-High-Power Electronics:
Amandla okuphatha okushisayo kwe-GaN-on-Diamond awenza afanelekele izinto zikagesi ezinamandla amakhulu, njengeziguquli zamandla, iziguquli, nezidluliseli eziqinile.

Amasistimu Okulawula Okushisayo:
Ngenxa yokushisa okuphezulu kwedayimane, lawa mawafa angasetshenziswa ezinhlelweni ezidinga ukuphathwa okushisayo okuqinile, okufana namandla aphezulu e-LED nezinhlelo ze-laser.

I-Q&A ye-GaN-on-Diamond Wafers

Q1: Iyini inzuzo yokusebenzisa ama-wafers e-GaN-on-Diamond ezinhlelweni ezisebenza ngamaza aphezulu?

A1:Amawafa e-GaN-on-Diamond ahlanganisa ukuhamba kwe-electron ephezulu kanye ne-bandgap ebanzi ye-GaN nokuhamba kahle okushisayo kwedayimane. Lokhu kuvumela amadivayisi anemvamisa ephezulu ukuthi asebenze kumazinga aphezulu wamandla kuyilapho elawula ukushisa ngokuphumelelayo, ukuqinisekisa ukusebenza kahle okukhulu nokuthembeka uma kuqhathaniswa nezinto ezivamile.

I-Q2: Ingabe ama-wafers e-GaN-on-Diamond angenziwa ngezifiso amandla athile kanye nezidingo zemvamisa?

A2:Yebo, amawafa e-GaN-on-Diamond anikezela ngezinketho ezingenziwa ngendlela oyifisayo, okuhlanganisa ukujiya kongqimba lwe-epitaxial (0.6 µm kuya ku-2.5 µm), usayizi we-wafer (4-intshi, 6-intshi), namanye amapharamitha asekelwe kuzidingo ezithile zohlelo lokusebenza, ehlinzeka ngokuguquguquka kwamandla aphezulu kanye nezinhlelo zokusebenza zefrikhwensi ephezulu.

Q3: Yiziphi izinzuzo ezibalulekile zedayimane njenge-substrate ye-GaN?

A3:I-thermal conductivity ye-Diamond eyedlulele (efika ku-2200 W/m·K) isiza ukuqeda ukushisa okukhiqizwa amadivayisi e-GaN anamandla amakhulu. Leli khono lokuphatha okushisayo livumela amadivayisi e-GaN-on-Diamond ukuthi asebenze ngokuminyana kwamandla aphezulu namaza, okuqinisekisa ukusebenza okuthuthukisiwe kwedivayisi nokuhlala isikhathi eside.

I-Q4: Ingabe ama-wafers e-GaN-on-Diamond afaneleka endaweni noma izicelo ze-aerospace?

A4:Yebo, ama-wafers e-GaN-on-Diamond afaneleka kahle endaweni kanye nezicelo ze-aerospace ngenxa yokuthembeka kwawo okuphezulu, amandla okuphatha okushisayo, kanye nokusebenza ezimweni ezimbi kakhulu, njengemisebe ephezulu, ukuhlukahluka kwezinga lokushisa, nokusebenza kwe-high-frequency.

Q5: Ingakanani impilo elindelwe yamadivayisi enziwe ngamawafa e-GaN-on-Diamond?

A5:Inhlanganisela yokuqina kwe-GaN yemvelo kanye nezakhiwo zedayimane ezihlukile zokuqeda ukushisa kuholela esikhathini eside sempilo yamadivayisi. Amadivayisi e-GaN-on-Diamond aklanyelwe ukusebenza ezindaweni ezinokhahlo nezimo zamandla aphezulu ezinokuwohloka okuncane ngokuhamba kwesikhathi.

I-Q6: I-thermal conductivity yedayimane ikuthinta kanjani ukusebenza kukonke kwama-wafers e-GaN-on-Diamond?

A6:I-thermal conductivity ephezulu yedayimane idlala indima ebalulekile ekuthuthukiseni ukusebenza kwamawafa e-GaN-on-Diamond ngokukhipha kahle ukushisa okukhiqizwa ekusetshenzisweni kwamandla aphezulu. Lokhu kuqinisekisa ukuthi amadivayisi we-GaN agcina ukusebenza kahle, anciphisa ukucindezeleka okushisayo, futhi agweme ukushisa ngokweqile, okuyinselele evamile kumadivayisi avamile we-semiconductor.

I-Q7: Yiziphi izinhlelo zokusebenza ezijwayelekile lapho ama-wafers e-GaN-on-Diamond edlula ezinye izinto zokwakha ze-semiconductor?

A7:Amawafa e-GaN-on-Diamond asebenza kahle kakhulu kunezinye izinto zokusebenza ezinhlelweni ezidinga ukuphathwa kwamandla aphezulu, ukusebenza kwamaza aphezulu, kanye nokuphatha okushisayo okusebenzayo. Lokhu kuhlanganisa izikhulisamandla ze-RF, amasistimu e-radar, ukuxhumana nge-microwave, ukuxhumana ngesathelayithi, nezinye izinto zikagesi ezinamandla amakhulu.

Isiphetho

Ama-wafer e-GaN-on-Diamond ahlinzeka ngesixazululo esiyingqayizivele sezinhlelo zokusebenza ze-high-frequency namandla aphezulu, okuhlanganisa ukusebenza okuphezulu kwe-GaN nezici ezishisayo ezingavamile zedayimane. Ngezici ezingenziwa ngendlela oyifisayo, zenzelwe ukuhlangabezana nezidingo zezimboni ezidinga ukulethwa kwamandla ngendlela efanele, ukuphathwa kwe-thermal, nokusebenza kwe-high-frequency, ukuqinisekisa ukwethembeka nokuphila isikhathi eside ezindaweni eziyinselele.