I-Gallium Nitride ku-Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, kanye nezinketho zohlobo lwe-N/P

I-Gallium Nitride ku-Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, kanye ne-N-type/P-type Izinketho Isithombe Esifakiwe

Incazelo emfushane:

Ama-Wafer ethu e-Gallium Nitride Angokwezifiso ku-Silicon (GaN-on-Si) aklanyelwe ukuhlangabezana nezidingo ezikhulayo zezinhlelo zokusebenza ze-elekthronikhi ezinemvamisa ephezulu namandla aphezulu. Atholakala kuwo womabili amasayizi ama-intshi angu-4 no-6-intshi wamawafa, lawa mawafa anikeza izinketho zokwenza ngokwezifiso zokuma kwe-Si substrate, ukumelana nohlobo lwe-doping (uhlobo lwe-N/P-uhlobo) ukuze ivumelane nezidingo ezithile zohlelo lokusebenza. Ubuchwepheshe be-GaN-on-Si buhlanganisa izinzuzo ze-gallium nitride (GaN) ne-silicon (Si) substrate ebiza kancane, okuvumela ukuphathwa okungcono kokushisa, ukusebenza kahle okuphezulu, kanye nesivinini sokushintsha ngokushesha. Nge-bandgap yawo ebanzi nokumelana nogesi okuphansi, lawa mawafa alungele ukuguqulwa kwamandla, izinhlelo zokusebenza ze-RF, kanye nezinhlelo zokudlulisa idatha ngesivinini esikhulu.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici

●I-Bandgap ebanzi:I-GaN (3.4 eV) ihlinzeka ngokuthuthuka okuphawulekayo ekusebenzeni kwe-high-frequency, amandla aphezulu, kanye nezinga lokushisa eliphezulu uma kuqhathaniswa ne-silicon yakudala, iyenze ifaneleke kumadivayisi kagesi nezikhulisi ze-RF.
●Umumo we-Si Substrate ngendlela oyifisayo:Khetha emimoyeni ehlukene ye-Si substrate efana ne-<111>, <100>, nokunye ukuze ufanise nezidingo ezithile zedivayisi.
●Ukumelana Nokwezifiso:Khetha phakathi kwezinketho ezihlukene zokumelana ne-Si, kusukela ku-semi-insulating ukuya ekumelaneni okuphezulu kanye nokumelana okuphansi ukuze uthuthukise ukusebenza kwedivayisi.
● Uhlobo lwe-Doping:Itholakala ngohlobo lwe-N noma i-P-doping ukuze ifane nezimfuneko zamadivayisi kagesi, ama-RF transistors, noma ama-LED.
● I-Voltage Yokuhlukana Okuphezulu:Amawafa e-GaN-on-Si ane-voltage ephezulu yokuphuka (afika ku-1200V), ewavumela ukuthi aphathe izinhlelo zokusebenza zamandla kagesi aphezulu.
●Isivinini Sokushintsha Okusheshayo:I-GaN inokuhamba kwama-electron aphezulu kanye nokulahlekelwa kokushintsha okuphansi kune-silicon, okwenza amawafa e-GaN-on-Si alungele amasekhethi anesivinini esikhulu.
●Ukusebenza Okushisayo Okuthuthukisiwe:Naphezu kokushisa okuphansi kwe-silicon, i-GaN-on-Si isanikeza ukuzinza okushisayo okuphakeme, ngokukhipha ukushisa okungcono kunamadivayisi we-silicon yendabuko.

Imininingwane Yezobuchwepheshe

Ipharamitha	Inani
Usayizi we-Wafer	4-intshi, 6-intshi
I-Substrate Orientation	<111>, <100>, ngokwezifiso
I-Resistivity	High-resistivity, Semi-insulating, Low-ukumelana
Uhlobo lweDoping	Uhlobo lwe-N, uhlobo lwe-P
Ukuqina Kwengqimba ye-GaN	100nm – 5000nm (ngezifiso)
I-AlGaN Barrier Layer	24% - 28% Al (okujwayelekile 10-20 nm)
Ukuhlukaniswa kwe-Voltage	600V - 1200V
I-electron Mobility	2000 cm²/V·s
Ukushintsha Imvamisa	Kufika ku-18 GHz
I-Wafer Surface Roughness	I-RMS ~0.25 nm (AFM)
I-GaN Sheet Resistance	437.9 Ω·cm²
Isamba se-Wafer Warp	< 25 µm (ubuningi)
I-Thermal Conductivity	1.3 – 2.1 W/cm·K

Izinhlelo zokusebenza

Amandla kagesi: I-GaN-on-Si ilungele ama-electronics anamandla njengama-amplifiers, ama-converter, nama-inverters asetshenziswa ezinhlelweni zamandla avuselelekayo, izimoto zikagesi (EVs), kanye nemishini yezimboni. I-voltage yayo ephezulu yokuphuka kanye nokumelana okuphansi kuqinisekisa ukuguqulwa kwamandla okusebenzayo, ngisho nasezinhlelweni zamandla aphezulu.

I-RF kanye neMicrowave Communications: Amawafa e-GaN-on-Si anikezela ngamakhono efrikhwensi ephezulu, awenza afanelekele izikhulisamandla zamandla e-RF, ezokuxhumana ngesathelayithi, amasistimu e-radar, nobuchwepheshe be-5G. Ngejubane eliphezulu lokushintsha kanye nekhono lokusebenza kumafrikhwensi aphezulu (kufika ku18 GHz), amadivayisi we-GaN anikeza ukusebenza okuphezulu kulezi zinhlelo zokusebenza.

I-Automotive Electronics: I-GaN-on-Si isetshenziswa ezinhlelweni zamandla ezimoto, kufaka phakathiAmashaja angaphakathi ebhodini (OBCs)futhiIziguquli ze-DC-DC. Ikhono layo lokusebenza emazingeni okushisa aphezulu kanye nokumelana namazinga aphezulu kagesi kuyenza ifaneleke kahle ezinsizeni zezimoto zikagesi ezidinga ukuguqulwa kwamandla aqinile.

I-LED kanye ne-Optoelectronics: I-GaN iyinto yokuzikhethela ama-LED aluhlaza namhlophe. Ama-wafers e-GaN-on-Si asetshenziselwa ukukhiqiza izinhlelo zokukhanyisa ze-LED ezisebenza kahle kakhulu, ezinikeza ukusebenza okuhle kakhulu ekukhanyeni, ekuboniseni ubuchwepheshe, kanye nokuxhumana okubonakalayo.

Q&A

Q1: Iyini inzuzo ye-GaN ngaphezu kwe-silicon kumadivayisi kagesi?

A1:I-GaN ine-ai-bandgap ebanzi (3.4 eV)kune-silicon (1.1 eV), eyivumela ukuthi imelane nama-voltage aphezulu namazinga okushisa. Lesi sakhiwo senza i-GaN ikwazi ukuphatha izinhlelo zokusebenza zamandla aphezulu ngendlela ephumelela kakhudlwana, inciphisa ukulahleka kwamandla nokwandisa ukusebenza kwesistimu. I-GaN iphinde inikeze ngesivinini sokushintsha esisheshayo, esibalulekile kumadivayisi anemvamisa ephezulu njengama-amplifiers e-RF neziguquli zamandla.

Q2: Ngingakwazi yini ukwenza ngokwezifiso i-Si substrate orientation yesicelo sami?

A2:Yebo, sinikezacustomizable Si substrate orientationsnjenge<111>, <100>, nokunye ukuma kuye ngezidingo zedivayisi yakho. Ukuma kwe-Si substrate kudlala indima ebalulekile ekusebenzeni kwedivayisi, okuhlanganisa izici zikagesi, ukuziphatha okushisayo, nokuzinza kwemishini.

I-Q3: Yiziphi izinzuzo zokusebenzisa ama-wafers e-GaN-on-Si kuzinhlelo zokusebenza ze-high-frequency?

A3:Ama-wafers e-GaN-on-Si anikeza okungcono kakhuluukushintsha isivinini, okuvumela ukusebenza ngokushesha kumafrikhwensi aphezulu uma kuqhathaniswa ne-silicon. Lokhu kubenza balungeleRFfuthii-microwaveizicelo, kanye high-frequencyamadivaysi amandlanjengeAma-HEMTs(High Electron Mobility Transistors) kanyeAma-amplifiers e-RF. Ukuhamba kwama-electron aphezulu we-GaN nakho kuholela ekulahlekeni okuphansi kokushintsha kanye nokusebenza okuthuthukisiwe.

Q4: Yiziphi izinketho ze-doping ezitholakalayo zama-wafers e-GaN-on-Si?

A4:Sinikeza kokubiliN-uhlobofuthiUhlobo lwe-Pokukhethwa kukho kwe-doping, okuvame ukusetshenziselwa izinhlobo ezahlukene zamadivayisi we-semiconductor.I-N-uhlobo lwe-dopingilungeleamandla transistorsfuthiAma-amplifiers e-RF, ngenkathiP-uhlobo lwe-dopingivame ukusetshenziselwa amadivaysi e-optoelectronic afana nama-LED.

Isiphetho

I-Gallium Nitride yethu Eyenziwe Ngezifiso Ku-Silicon (GaN-on-Si) Wafers ihlinzeka ngesixazululo esifanelekile sezinhlelo zokusebenza ezinemvamisa ephezulu, amandla aphezulu, kanye nezinga eliphezulu lokushisa. Ngokuqondiswa kwe-Si substrate okwenziwa ngokwezifiso, ukumelana nohlobo lwe-N/P-uhlobo lwe-doping, lawa mawafa enzelwe ukuhlangabezana nezidingo ezithile zezimboni kusukela kugesi wamandla nezinhlelo zezimoto kuya kokuxhumana kwe-RF kanye nobuchwepheshe be-LED. Ngokusebenzisa izici eziphakeme ze-GaN nokuqina kwe-silicon, lawa mawafa anikeza ukusebenza okuthuthukisiwe, ukusebenza kahle, nokuqinisekisa okuzayo kwamadivayisi esizukulwane esilandelayo.