I-Gallium Nitride (GaN) Epitaxial Ikhule ku-Sapphire Wafers 4inch 6inch ye-MEMS

I-Gallium Nitride (GaN) Epitaxial Ikhule ku-Sapphire Wafers 4inch 6inch yesithombe esifakiwe se-MEMS

Incazelo emfushane:

I-Gallium Nitride (GaN) kumawafa we-Sapphire inikeza ukusebenza okungenakuqhathaniswa kwezinhlelo zokusebenza zemvamisa ephezulu namandla aphezulu, okuyenza ibe into efanelekile yamamojula angaphambili we-RF (Radio Frequency) esizukulwaneni esilandelayo, izibani ze-LED, namanye amadivaysi e-semiconductor.I-GaNizici zikagesi eziphakeme, okuhlanganisa i-bandgap ephezulu, ziwuvumela ukuthi usebenze kuma-voltage aphezulu okuphuka kanye namazinga okushisa kunamadivayisi asekelwe ku-silicon. Njengoba i-GaN iya ngokuya yamukelwa phezu kwe-silicon, iqhuba intuthuko kwezogesi ezidinga izinto ezingasindi, ezinamandla, nezisebenzayo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo ze-GaN kuma-Sapphire Wafers

● Ukusebenza Okuphezulu:Amadivayisi asekelwe ku-GaN anikeza amandla aphindwe kahlanu kunamadivayisi asekelwe ku-silicon, athuthukisa ukusebenza ezinhlelweni ezihlukahlukene zikagesi, okuhlanganisa i-RF amplification kanye ne-optoelectronics.
●I-Bandgap ebanzi:I-bandgap ebanzi ye-GaN inika amandla ukusebenza kahle okuphezulu emazingeni okushisa aphakeme, iyenze ilungele ukusetshenziswa kwamandla aphezulu kanye nemvamisa ephezulu.
●Ukuqina:Ikhono le-GaN lokusingatha izimo ezimbi kakhulu (izinga lokushisa eliphezulu nemisebe) liqinisekisa ukusebenza okuhlala isikhathi eside ezindaweni ezinokhahlo.
●Usayizi Omncane:I-GaN ivumela ukukhiqizwa kwamadivayisi ahlangene kakhulu futhi angasindi uma kuqhathaniswa nezinto ezivamile ze-semiconductor, okusiza ama-electronics amancane nanamandla kakhulu.

Abstract

I-Gallium Nitride (GaN) ivela njenge-semiconductor yokuzikhethela yezinhlelo zokusebenza ezithuthukisiwe ezidinga amandla aphezulu nokusebenza kahle, njengamamojula we-RF front-end, izinhlelo zokuxhumana ezinesivinini esikhulu, nokukhanyisa kwe-LED. Ama-wafers e-GaN epitaxial, lapho ekhuliswe kuma-sapphire substrates, anikeza inhlanganisela yokuguquguquka kwe-thermal ephezulu, i-voltage ephezulu yokuphuka, kanye nokusabela kwefrikhwensi ebanzi, okuyisihluthulelo sokusebenza kahle kumadivayisi okuxhumana angenantambo, ama-radar, nama-jammer. Lawa mawafa atholakala ngawo womabili amadayamitha angu-4 intshi kanye no-6-intshi, anogqinsi oluhlukahlukene lwe-GaN ukuze ahlangabezane nezidingo zobuchwepheshe ezihlukile. Izakhiwo ezihlukile ze-GaN ziyenza ibe ikhandidethi eliyinhloko lekusasa lama-electronics wamandla.

Amapharamitha womkhiqizo

Isici soMkhiqizo	Ukucaciswa
I-Wafer Diameter	50mm, 100mm, 50.8mm
I-substrate	Isafire
Ukuqina Kwengqimba ye-GaN	0.5 μm - 10 μm
Uhlobo lwe-GaN/Doping	Uhlobo lwe-N (uhlobo lwe-P lutholakala lapho ucelwa)
I-GaN Crystal Orientation	<0001>
Uhlobo Lokupholisha	I-Single-Side polished (SSP), Ipholishwe kabili ohlangothini (DSP)
Ubukhulu be-Al2O3	430 μm - 650 μm
I-TTV (Ukuhlukahluka Kokuqina Kokuphelele)	≤ 10 μm
Khothama	≤ 10 μm
I-Wap	≤ 10 μm
Indawo engaphezulu	Indawo Engaphezulu Esebenzisekayo > 90%

Q&A

I-Q1: Yiziphi izinzuzo ezibalulekile zokusebenzisa i-GaN ngaphezu kwama-semiconductors asekelwe ku-silicon?

A1: I-GaN inikeza izinzuzo ezimbalwa ezibalulekile ngaphezu kwe-silicon, okuhlanganisa i-bandgap ebanzi, eyivumela ukuthi ibambe ama-voltage aphezulu okuphuka futhi isebenze kahle emazingeni okushisa aphezulu. Lokhu kwenza i-GaN ilungele ukusetshenziswa kwamandla aphezulu, imvamisa ephezulu njengamamojula e-RF, izikhulisamandla, nama-LED. Ikhono le-GaN lokusingatha ukuminyana kwamandla okuphezulu liphinde linike amandla amadivayisi amancane nasebenza kahle kakhulu uma kuqhathaniswa nezinye izindlela ezisekelwe ku-silicon.

Q2: Ingabe i-GaN on Sapphire wafers ingasetshenziswa ezinhlelweni ze-MEMS (Micro-Electro-Mechanical Systems)?

A2: Yebo, amawafa e-GaN on Sapphire alungele izinhlelo zokusebenza ze-MEMS, ikakhulukazi lapho kudingeka khona amandla aphezulu, ukuqina kwezinga lokushisa, nomsindo ophansi. Ukuqina nokusebenza kahle kwempahla ezindaweni ezinemvamisa ephezulu kuyenza ifaneleke kumadivayisi we-MEMS asetshenziswa ekuxhumaneni okungenantambo, okokuzwa, namasistimu e-radar.

Q3: Yiziphi izinhlelo zokusebenza ezingaba khona ze-GaN ekuxhumaneni okungenantambo?

A3: I-GaN isetshenziswa kakhulu kumamojula angaphambili we-RF wokuxhumana okungenantambo, okuhlanganisa ingqalasizinda ye-5G, amasistimu e-radar, nama-jammer. Ukuminyana kwayo okuphezulu kwamandla kanye nokuqhutshwa kokushisa kuyenza ifanelekele amandla aphezulu, amadivaysi ama-high-frequency, okunika amandla ukusebenza okungcono kanye nezici zefomu ezincane uma kuqhathaniswa nezixazululo ezisekelwe ku-silicon.

Q4: Yiziphi izikhathi zokuhola kanye nenani elincane le-oda le-GaN kuma-wafers we-Sapphire?

A4: Izikhathi zokuhola kanye nenani elincane le-oda liyahlukahluka kuye ngosayizi we-wafer, ukujiya kwe-GaN, kanye nezidingo ezithile zekhasimende. Sicela usithinte ngokuqondile ukuze uthole intengo enemininingwane kanye nokutholakala ngokusekelwe kuzicaciso zakho.

I-Q5: Ngingakwazi yini ukuthola ukujiya kwesendlalelo se-GaN ngokwezifiso noma amazinga e-doping?

A5: Yebo, sinikeza ukwenza ngokwezifiso ukujiya kwe-GaN namazinga e-doping ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza. Sicela usazise imininingwane yakho oyifunayo, futhi sizokunikeza isisombululo esifanelana nawe.