I-Gallium Nitride (GaN) Epitaxial Ekhulele kuma-Wafers e-Sapphire angu-4 intshi angu-6 intshi e-MEMS

I-Gallium Nitride (GaN) Epitaxial Ekhulele Kuma-Wafers e-Sapphire angu-4 intshi angu-6 intshi we-MEMS Isithombe Esifakiwe

Incazelo emfushane:

I-Gallium Nitride (GaN) kuma-wafer e-Sapphire inikeza ukusebenza okungenakuqhathaniswa kwezinhlelo zokusebenza ezisebenzisa imvamisa ephezulu kanye namandla aphezulu, okwenza kube yinto efanelekile yamamojula angaphambili esizukulwane esilandelayo se-RF (Radio Frequency), izibani ze-LED, kanye namanye amadivayisi e-semiconductor.I-GaNIzici zikagesi eziphakeme kakhulu, okuhlanganisa negebe elikhulu, zivumela ukuthi isebenze ngama-voltage aphezulu okuphazamiseka kanye namazinga okushisa kunamadivayisi avamile asekelwe ku-silicon. Njengoba i-GaN isetshenziswa kakhulu kune-silicon, iqhuba intuthuko kuma-electronics adinga izinto ezilula, ezinamandla, nezisebenzayo.

Sithumelele i-imeyili

Izici

Izakhiwo ze-GaN kuma-Wafers e-Sapphire

●Ukusebenza Kahle Kakhulu:Amadivayisi asekelwe ku-GaN anikeza amandla aphindwe kahlanu kunamadivayisi asekelwe ku-silicon, okuthuthukisa ukusebenza ezinhlelweni ezahlukene ze-elekthronikhi, okuhlanganisa ukukhuliswa kwe-RF kanye ne-optoelectronics.
●Isikhala Esibanzi Sebhendi:Igebe elikhulu le-GaN lenza kube lula ukusebenza kahle kakhulu emazingeni okushisa aphezulu, okwenza kube kuhle kakhulu ekusetshenzisweni kwamandla aphezulu kanye nemvamisa ephezulu.
●Ukuqina:Ikhono le-GaN lokusingatha izimo ezimbi kakhulu (amazinga okushisa aphezulu kanye nemisebe) liqinisekisa ukusebenza okuhlala isikhathi eside ezindaweni ezinzima.
●Usayizi Omncane:I-GaN ivumela ukukhiqizwa kwamadivayisi amancane nalula uma kuqhathaniswa nezinto ze-semiconductor zendabuko, okwenza kube lula kuma-elekthronikhi amancane nanamandla kakhulu.

Isifinyezo

I-Gallium Nitride (GaN) ivela njenge-semiconductor ekhethwayo yezinhlelo zokusebenza ezithuthukisiwe ezidinga amandla aphezulu kanye nokusebenza kahle, njenge-RF front-end modules, izinhlelo zokuxhumana ezisheshayo, kanye nokukhanya kwe-LED. Ama-wafer epitaxial eGaN, uma ekhuliswe kuma-substrates e-sapphire, anikeza inhlanganisela yokushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye nempendulo yemvamisa ebanzi, okuyisihluthulelo sokusebenza kahle kumadivayisi okuxhumana angenantambo, ama-radar, kanye nama-jammer. Lawa ma-wafer atholakala ngobubanzi obungu-4 intshi no-6 intshi, anobukhulu obuhlukahlukene be-GaN ukuze kuhlangatshezwane nezidingo zobuchwepheshe ezahlukene. Izakhiwo ezihlukile ze-GaN ziyenza ibe yisinqumo esiyinhloko sekusasa lama-electronics kagesi.

Amapharamitha Omkhiqizo

Isici Somkhiqizo	Imininingwane
Ububanzi be-Wafer	50mm, 100mm, 50.8mm
I-substrate	I-Sapphire
Ubukhulu Besendlalelo se-GaN	0.5 μm - 10 μm
Uhlobo lwe-GaN/Ukusebenzisa i-Doping	Uhlobo lwe-N (uhlobo lwe-P luyatholakala uma luceliwe)
Ukuqondiswa kwekristalu ye-GaN	<0001>
Uhlobo Lokupholisha	Okupholishiwe Ohlangothini Olulodwa (SSP), Okupholishiwe Ohlangothini Olubili (DSP)
Ubukhulu be-Al2O3	430 μm - 650 μm
I-TTV (Ukwehluka Kobukhulu Obuphelele)	≤ 10 μm
Umnsalo	≤ 10 μm
I-Warp	≤ 10 μm
Indawo Yomphezulu	Indawo Engasetshenziswa > 90%

Imibuzo Nezimpendulo

Q1: Yiziphi izinzuzo ezibalulekile zokusebenzisa i-GaN kune-semiconductors yendabuko esekelwe ku-silicon?

A1: I-GaN inikeza izinzuzo eziningana ezibalulekile kune-silicon, kufaka phakathi i-bandgap ebanzi, eyivumela ukuthi iphathe ama-voltage aphezulu okuqhekeka futhi isebenze kahle emazingeni okushisa aphezulu. Lokhu kwenza i-GaN ifaneleke kakhulu ezinhlelweni zokusebenza ezinamandla aphezulu, ezivame kakhulu njengamamojula e-RF, ama-amplifiers kagesi, nama-LED. Ikhono le-GaN lokusingatha ubuningi bamandla aphezulu liphinde lenze amadivayisi amancane futhi asebenza kahle kakhulu uma kuqhathaniswa nezinye izindlela ezisekelwe ku-silicon.

Umbuzo 2: Ingabe i-GaN kuma-wafer e-Sapphire ingasetshenziswa ezinhlelweni ze-MEMS (Micro-Electro-Mechanical Systems)?

A2: Yebo, i-GaN kuma-wafer e-Sapphire ifaneleka ezinhlelweni ze-MEMS, ikakhulukazi lapho kudingeka khona amandla aphezulu, ukuzinza kwezinga lokushisa, nomsindo ophansi. Ukuqina nokusebenza kahle kwezinto ezisetshenziswa ezindaweni ezivame kakhulu kwenza kube kuhle kakhulu kumadivayisi e-MEMS asetshenziswa ekuxhumaneni okungenantambo, ekuzweleni, kanye nasezinhlelweni ze-radar.

Umbuzo 3: Yiziphi izinhlelo zokusebenza ezingaba khona ze-GaN ekuxhumaneni okungenantambo?

A3: I-GaN isetshenziswa kabanzi kumamojula we-RF front-end wokuxhumana okungenantambo, okuhlanganisa ingqalasizinda ye-5G, izinhlelo ze-radar, kanye nama-jammer. Ubuningi bayo bamandla aphezulu kanye nokuqhuba kwayo ukushisa kuyenza ifaneleke kakhulu kumadivayisi anamandla aphezulu, anemvamisa ephezulu, okwenza kube nokusebenza okungcono kanye nezici ezincane zefomu uma kuqhathaniswa nezixazululo ezisekelwe ku-silicon.

Umbuzo 4: Ziyini izikhathi zokuhola kanye nenani elincane kakhulu le-oda le-GaN kuma-wafer e-Sapphire?

A4: Izikhathi zokukhokha kanye nobuningi be-oda obuncane ziyahlukahluka kuye ngosayizi we-wafer, ubukhulu be-GaN, kanye nezidingo zamakhasimende ezithile. Sicela usithinte ngqo ukuze uthole amanani anemininingwane kanye nokutholakala ngokusekelwe ezimisweni zakho.

Umbuzo 5: Ngingayithola yini amazinga okujiya noma amazinga okusebenzisa i-doping ngokwezifiso ze-GaN?

A5: Yebo, sinikeza ukwenza ngokwezifiso amazinga okujiya kwe-GaN kanye ne-doping ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza. Sicela usazise imininingwane oyifunayo, futhi sizokunikeza ikhambi elilungiselelwe wena.