I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL umgodi oqondile we-laser wavelength 940nm ukuhlangana okukodwa

I-GaAs laser epitaxial wafer 4 amayintshi angu-6 intshi ye-VCSEL umgodi oqondile we-laser wavelength 940nm ukuhlangana okukodwa Isithombe Esifakiwe

Incazelo emfushane:

Idizayini ecacisiwe yekhasimende I-Gigabit Ethernet laser array yokufana okuphezulu kwama-wafers angu-6-intshi 850/940nm centre optical wavelength oxide elinganiselwe noma efakwe nge-proton efakwe isixhumanisi sedatha yedijithali ye-VCSEL yokuxhumana, izici zikagesi zegundane le-laser kanye ne-optical ukuzwela okuphansi kwezinga lokushisa. I-VCSEL-940 Single Junction iyi-laser ye-cavity surface emitting laser (VCSEL) ene-wavelength ekhishwayo ngokuvamile ezungeze ama-nanometer angu-940. Amalaser anjalo ngokuvamile aqukethe umthombo owodwa we-quantum futhi ayakwazi ukuhlinzeka ngokukhishwa kokukhanya okusebenzayo. Ubude begagasi bama-nanometers angu-940 buyenza ibe ku-spectrum ye-infrared, ilungele izinhlelo zokusebenza ezihlukahlukene. Uma kuqhathaniswa nezinye izinhlobo zamalaser, ama-VCsels anokuguqulwa okuphezulu kwe-electro-optical ukusebenza kahle. Iphakheji le-VCSEL lincane futhi kulula ukulihlanganisa. Ukusetshenziswa okubanzi kwe-VCSEL-940 kwenze yadlala indima ebalulekile kwezobuchwepheshe besimanje.

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Izici eziyinhloko ze-GaAs laser epitaxial sheet zihlanganisa

1. Isakhiwo se-Single-junction: Le laser ivamise ukwakhiwa ngomthombo owodwa we-quantum, onganikeza ukukhishwa kokukhanya okuphumelelayo.
2. Ubude begagasi: Ubude begagasi obungu-940 nm buyenza ibe kububanzi be-infrared spectrum, ilungele izinhlelo zokusebenza ezihlukahlukene.
3. Ukusebenza kahle okuphezulu: Uma kuqhathaniswa nezinye izinhlobo zamalaser, i-VCSEL inokuguqulwa kahle kwe-electro-optical conversion.
4. Ukuqina: Iphakheji ye-VCSEL incane futhi kulula ukuyihlanganisa.

5. I-threshold ephansi kanye nokusebenza kahle okuphezulu: Amalaser e-heterostructure angcwatshiwe abonisa ukuminyana kwamanje okuphansi kakhulu (isb. 4mA/cm²) kanye nokusebenza kahle komthamo we-quantum ohlukile (isb. 36%), namandla okukhiphayo alinganayo angaphezu kuka-15mW.
6. Ukuzinza kwemodi ye-Waveguide: I-laser ye-heterostructure engcwatshiwe inenzuzo yokuzinza kwemodi ye-waveguide ngenxa yomshini wayo we-refractive index guided waveguide kanye nobubanzi obuncane bomugqa osebenzayo (cishe u-2μm).
7. Ukusebenza kahle kakhulu kokuguqulwa kwe-photoelectric: Ngokuthuthukisa inqubo yokukhula kwe-epitaxial, ukusebenza kahle okuphezulu kwe-quantum yangaphakathi kanye nokusebenza kahle kokuguqulwa kwe-photoelectric kungatholakala ukuze kuncishiswe ukulahlekelwa kwangaphakathi.
8. Ukuthembeka okuphezulu nokuphila: ubuchwepheshe obuphezulu bokukhula kwe-epitaxial bungalungisa amashidi e-epitaxial ngokubukeka okuhle kwendawo kanye nokuminyana kwesici esiphansi, ukuthuthukisa ukuthembeka komkhiqizo nokuphila.
9. Ifanele izinhlelo zokusebenza ezihlukahlukene: I-GAAS-based laser diode epitaxial sheet isetshenziswa kabanzi ekuxhumaneni kwe-fiber optical, izinhlelo zokusebenza zezimboni, i-infrared kanye ne-photodetectors nezinye izinkambu.

Izindlela eziyinhloko zohlelo lokusebenza ze-GaAs laser epitaxial sheet zihlanganisa

1. Ukuxhumana okubonakalayo kanye nokuxhumana kwedatha: Ama-wafers e-GaAs epitaxial asetshenziswa kabanzi emkhakheni wokuxhumana optical, ikakhulukazi ezinhlelweni zokuxhumana ezisebenza ngesivinini esikhulu, zokukhiqiza amadivaysi e-optoelectronic afana nama-lasers kanye nezitholi.

2. Izinhlelo zokusebenza zezimboni: Amashidi e-GaAs laser epitaxial nawo anokusetshenziswa okubalulekile ezinhlelweni zezimboni, njengokucutshungulwa kwe-laser, ukulinganisa kanye nokuzwa.

3. Izinto zikagesi zabathengi: Kuzinto zikagesi ezithengwayo, ama-wafer e-epitaxial e-GaAs asetshenziselwa ukwenza ama-VCsels (ama-laser aphuma endaweni eqondile yomgodi), asetshenziswa kakhulu kuma-smartphones kanye nokunye ugesi wabathengi.

4. Izinhlelo zokusebenza ze-Rf: Izinto ze-GaAs zinezinzuzo ezibalulekile emkhakheni we-RF futhi zisetshenziselwa ukukhiqiza imishini ye-RF esebenza kahle kakhulu.

5. Amalaser wamachashazi e-Quantum: Amalaza e-quantum dot asekelwe ku-GAAS asetshenziswa kakhulu kwezokuxhumana, kwezokwelapha nezempi, ikakhulukazi kubhendi yokuxhumana yokubona engu-1.31µm.

6. Iswishi ye-Passive Q: I-absorber ye-GaAs isetshenziselwa amalaser esimo esiqinile ane-diode-pumped ne-passive Q switch, elungele ukwenziwa kwe-micro-machining, i-range kanye ne-micro-surgery.

Lezi zinhlelo zokusebenza zibonisa amandla we-GaAs laser epitaxial wafers kuhlelo olubanzi lwezinhlelo zokusebenza zobuchwepheshe obuphezulu.

I-XKH inikeza ama-wafers e-GaAs epitaxial anezakhiwo nobukhulu obuhlukene obufanelana nezidingo zamakhasimende, ahlanganisa izinhlelo zokusebenza eziningi ezifana ne-VCSEL/HCSEL, i-WLAN, iziteshi eziyisisekelo ze-4G/5G, njll. Imikhiqizo ye-XKH ikhiqizwa kusetshenziswa okokusebenza kwe-MOCVD okuthuthukisiwe ukuze kuqinisekiswe ukusebenza okuphezulu kanye ukwethembeka. Ngokuphathelene nokuhlelwa kwempahla, sinenqwaba yamashaneli emithombo yamazwe ngamazwe, engakwazi ukuphatha inani lama-oda ngendlela eguquguqukayo, futhi sinikeze izinsizakalo ezenezezelwe njengokunciphisa, ukuhlukanisa, njll. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende izinga kanye nezikhathi zokulethwa. Ngemva kokufika, amakhasimende angathola ukwesekwa okupheleleyo kwezobuchwepheshe kanye nesevisi yangemva kokuthengisa ukuze aqinisekise ukuthi umkhiqizo usetshenziswa kahle.