I-GaAs laser epitaxial wafer engu-4 intshi engu-6 intshi i-VCSEL vertical cavity surface emission wavelength engu-940nm single junction

I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL vertical cavity surface emission laser wavelength 940nm single junction Isithombe Esifakiwe

Incazelo emfushane:

Idizayini ecacisiwe yikhasimende Ama-laser arrays e-Gigabit Ethernet aklanyelwe ukufana okuphezulu Ama-wafer angu-6-intshi 850/940nm center optical wavelength oxide ukuxhumana kwedatha yedijithali ye-VCSEL okulinganiselwe noma okufakwe i-proton, izici zikagesi neze-optical eziphansi ukuzwela ekushiseni. I-VCSEL-940 Single Junction iyi-vertical cavity surface ekhipha i-laser (VCSEL) ene-emission wavelength ngokuvamile ecishe ibe ngama-nanometer angu-940. Ama-laser anjalo ngokuvamile aqukethe umthombo owodwa we-quantum futhi ayakwazi ukunikeza ukukhanya okuphumelelayo. I-wavelength yama-nanometer angu-940 iyenza ibe se-infrared spectrum, ifanele izinhlelo zokusebenza ezahlukahlukene. Uma kuqhathaniswa nezinye izinhlobo zama-laser, ama-VCsel anokusebenza okuphezulu kokuguqulwa kwe-electro-optical. Iphakheji ye-VCSEL incane kakhulu futhi kulula ukuyihlanganisa. Ukusetshenziswa okubanzi kwe-VCSEL-940 kwenze ukuthi idlale indima ebalulekile kubuchwepheshe besimanje.

Sithumelele i-imeyili

Izici

Izici eziyinhloko zeshidi le-epitaxial le-laser le-GaAs zifaka phakathi

1. Isakhiwo se-single-junction: Le laser ivame ukwakhiwa umthombo owodwa we-quantum, onganikeza ukukhishwa kokukhanya okuphumelelayo.
2. Ubude be-Wavelength: Ubude be-wavelength obungu-940 nm buyenza ibe sebangeni le-infrared spectrum, ifanele ukusetshenziswa okuhlukahlukene.
3. Ukusebenza kahle kakhulu: Uma kuqhathaniswa nezinye izinhlobo zama-laser, i-VCSEL inokusebenza kahle kakhulu kokuguqulwa kwe-electro-optical.
4. Ubukhulu: Iphakheji ye-VCSEL incane kakhulu futhi kulula ukuyihlanganisa.

5. Umkhawulo wamanje ophansi kanye nokusebenza kahle okuphezulu: Ama-laser e-heterostructure angcwatshwe abonisa ukuminyana kwamanje okuphansi kakhulu kwe-threshold (isb. 4mA/cm²) kanye nokusebenza kahle kwe-quantum okuhlukile kwangaphandle (isb. 36%), ngamandla okukhipha aqondile adlula i-15mW.
6. Ukuqina kwemodi ye-Waveguide: I-laser ye-heterostructure efihliwe inenzuzo yokuqina kwemodi ye-waveguide ngenxa yendlela yayo ye-refractive index guided waveguide kanye nobubanzi obuncane be-active strip (cishe ama-2μm).
7. Ukusebenza kahle kokuguqulwa kwe-photoelectric: Ngokwenza ngcono inqubo yokukhula kwe-epitaxial, ukusebenza kahle kwe-quantum yangaphakathi kanye nokusebenza kahle kokuguqulwa kwe-photoelectric kungatholakala ukuze kuncishiswe ukulahlekelwa kwangaphakathi.
8. Ukuthembeka okuphezulu nokuphila: ubuchwepheshe bokukhula kwe-epitaxial obusezingeni eliphezulu bungalungisa amashidi e-epitaxial anokubukeka okuhle kobuso kanye nobuningi obuphansi beziphambeko, okuthuthukisa ukuthembeka komkhiqizo nokuphila.
9. Ifanele izinhlelo zokusebenza ezahlukahlukene: Ishidi le-epitaxial le-laser diode elisekelwe ku-GAAS lisetshenziswa kabanzi ekuxhumaneni nge-optical fiber, izinhlelo zokusebenza zezimboni, ama-infrared kanye nama-photodetector kanye neminye imikhakha.

Izindlela eziyinhloko zokusebenzisa ishidi le-epitaxial le-laser le-GaAs zifaka phakathi

1. Ukuxhumana okubonakalayo kanye nokuxhumana kwedatha: Ama-wafer epitaxial epitaxial e-GaAs asetshenziswa kabanzi emkhakheni wokuxhumana okubonakalayo, ikakhulukazi ezinhlelweni zokuxhumana okubonakalayo ezisheshayo, ekukhiqizeni amadivayisi e-optoelectronic afana nama-laser kanye nama-detector.

2. Izicelo Zezimboni: Amashidi e-epitaxial e-laser e-GaAs nawo anezisetshenziswa ezibalulekile ezisetshenziswa zezimboni, njengokucubungula nge-laser, ukulinganisa kanye nokuzwa.

3. Ama-electronic asetshenziswa ngabathengi: Kuma-electronic asetshenziswa ngabathengi, ama-wafer epitaxial epitaxial asetshenziswa ukukhiqiza ama-VCsels (ama-laser akhipha ubuso obuqondile), asetshenziswa kabanzi kuma-smartphone nakwamanye ama-electronic asetshenziswa ngabathengi.

4. Izinhlelo zokusebenza ze-Rf: Izinto ze-GaAs zinezinzuzo ezibalulekile emkhakheni we-RF futhi zisetshenziselwa ukukhiqiza amadivayisi e-RF asebenza kahle kakhulu.

5. Ama-laser e-quantum dot: Ama-laser e-quantum dot asekelwe ku-GAAS asetshenziswa kabanzi emikhakheni yezokuxhumana, yezokwelapha neyezempi, ikakhulukazi ebhendini yokuxhumana ye-optical engu-1.31µm.

6. Iswishi ye-Passive Q: I-GaAs absorber isetshenziselwa ama-laser e-solid state adonswe yi-diode aneswishi ye-Q engasebenzisi i-passive, efanelekile kuma-micro-machining, e-ranging kanye nase-micro-surgery.

Lezi zinhlelo zokusebenza zibonisa amandla ama-wafer epitaxial laser e-GaAs ezinhlobonhlobo zezinhlelo zokusebenza zobuchwepheshe obuphezulu.

I-XKH inikeza ama-wafer epitaxial e-GaAs anezakhiwo ezahlukene kanye nobukhulu obufanele izidingo zamakhasimende, ahlanganisa izinhlelo zokusebenza eziningi ezifana ne-VCSEL/HCSEL, i-WLAN, iziteshi zesisekelo ze-4G/5G, njll. Imikhiqizo ye-XKH ikhiqizwa kusetshenziswa imishini ye-MOCVD ethuthukisiwe ukuqinisekisa ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuthutha, sineziteshi eziningi zemithombo yamazwe ngamazwe, singaphatha kalula inani lama-oda, futhi sinikeze izinsizakalo ezinenani elingeziwe njengokunciphisa, ukuhlukaniswa, njll. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende zekhwalithi nezikhathi zokulethwa. Ngemva kokufika, amakhasimende angathola ukwesekwa kobuchwepheshe okuphelele kanye nensizakalo yangemva kokuthengisa ukuqinisekisa ukuthi umkhiqizo usetshenziswa kahle.