I-GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser
Izici ezibalulekile zeshidi le-GaAs laser epitaxial zifaka:
I-1.Ukuhamba kwe-electron ephezulu: I-Gallium arsenide inokuhamba kwe-electron ephezulu, okwenza ama-wafers we-laser epitaxial we-GaAs abe nezinhlelo zokusebenza ezinhle kumadivayisi we-high-frequency kanye namadivayisi we-electronic anesivinini esikhulu.
I-2.Direct bandgap transition luminescence: Njengempahla ye-bandgap eqondile, i-gallium arsenide ingakwazi ukuguqula kahle amandla kagesi abe amandla okukhanya kumadivayisi we-optoelectronic, iyenze ibe ilungele ukwenziwa kwama-lasers.
3.Ubude beWavelength: Amalaser e-GaAs 905 ngokuvamile asebenza ku-905 nm, awenza afanelekele izinhlelo zokusebenza eziningi, kuhlanganise ne-biomedicine.
I-4.Ukusebenza kahle okuphezulu: ngokusebenza kahle kokuguqulwa kwe-photoelectric, kungaguqula ngokuphumelelayo amandla kagesi abe okukhipha i-laser.
I-5.Okukhipha amandla aphezulu: Ingakwazi ukuzuza amandla aphezulu futhi ifanele izimo zohlelo lokusebenza ezidinga umthombo wokukhanya oqinile.
I-6.Ukusebenza okuhle kwe-thermal: Izinto ze-GaAs zinokusebenza okuhle kwe-thermal, okusiza ukunciphisa izinga lokushisa lokusebenza kwe-laser nokuthuthukisa ukuzinza.
I-7.Wide tunability: Amandla okukhiphayo angalungiswa ngokushintsha idrayivu yamanje ukuze ivumelane nezidingo ezahlukene zohlelo lokusebenza.
Ukusetshenziswa okuyinhloko kwamaphilisi e-GaAs laser epitaxial afaka:
1. Ukuxhumana kwe-fiber optical: Ishidi le-GaAs laser epitaxial lingasetshenziswa ukwenza ama-lasers ekuxhumaneni kwe-fiber optical ukuze kuzuzwe ukudluliswa kwesignali ye-optical yesivinini esikhulu kanye nebanga elide.
2. Izicelo zezimboni: Emkhakheni wezimboni, amashidi e-GaAs laser epitaxial angasetshenziselwa ukulinganisa kwe-laser, ukumaka laser nezinye izinhlelo zokusebenza.
3. I-VCSEL: I-laser ye-vertical cavity surface emitting (VCSEL) iyinkambu yohlelo lokusebenza ebalulekile ye-GaAs laser epitaxial sheet, esetshenziswa kabanzi ekuxhumaneni okubonakalayo, isitoreji se-optical kanye ne-optical sensing.
4. Inkambu ye-infrared nebala: Ishidi le-laser epitaxial ye-GaAs lingasetshenziswa futhi ukwenza ama-laser e-infrared, amajeneretha amabala namanye amadivaysi, adlala indima ebalulekile ekutholweni kwe-infrared, isibonisi sokukhanya nezinye izinkambu.
Ukulungiswa kweshidi le-GaAs laser epitaxial sheet ikakhulukazi kuncike kubuchwepheshe bokukhula kwe-epitaxial, okuhlanganisa i-metal-organic chemical vapor deposition (MOCVD), i-molecular beam epitaxial (MBE) nezinye izindlela. Lawa masu angakwazi ukulawula ngokunembile ukujiya, ukwakheka kanye nesakhiwo sekristalu sengqimba ye-epitaxial ukuze kutholwe amashidi e-GaAs laser epitaxial aphezulu.
I-XKH inikezela ngokwenza ngokwezifiso amashidi e-GaAs epitaxial ezakhiweni ezihlukene nogqinsi, amboze inhlobonhlobo yezinhlelo zokusebenza kwezokuxhumana okubonakalayo, i-VCSEL, i-infrared nezindawo ezikhanyayo. Imikhiqizo ye-XKH yakhiwe ngemishini ye-MOCVD ethuthukisiwe ukuze kuqinisekiswe ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuhlelwa kwempahla, i-XKH ineziteshi eziningi zemithombo yamazwe ngamazwe, ezingasingatha kalula inani lama-oda, futhi zinikeze ngamasevisi anenani elingeziwe njengokucolisiswa nokuhlukaniswa iziqephu. Izinqubo zokulethwa ezisebenzayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende zekhwalithi nezikhathi zokulethwa. Amakhasimende angathola ukwesekwa okupheleleyo kwezobuchwepheshe kanye nesevisi yangemva kokuthengisa ngemva kokufika ukuze aqinisekise ukuthi umkhiqizo usetshenziswa kahle.