I-GaAs enamandla amakhulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser

Incazelo emfushane:

Ishidi le-epitaxial le-laser le-GaAs libhekisela ezintweni zefilimu ezincane zekristalu ezakhiwe ubuchwepheshe bokukhula kwe-epitaxial ku-substrate ye-gallium arsenide (GaAs), esetshenziselwa ukukhiqiza amadivayisi e-optoelectronic afana nama-laser.
Ama-laser anamandla e-GaAs 905 kanye nama-chips epitaxy anamandla aphezulu e-GaAs angama-laser asekelwe ezintweni ze-gallium arsenide (GaAs) futhi asetshenziswa kabanzi emikhakheni eminingi. I-wafer ye-MOCVD epitaxial isetshenziswa kakhulu kwi-laser diode enamandla aphezulu. Umthombo we-InGaAs quantum usetshenziswa njengesendlalelo esisebenzayo. I-wafer ye-epitaxial ihlaziywa yi-PL, XRD, ECV nezinye izindlela zokuhlola. Ama-laser anamandla e-GaAs 905 kanye nama-chips epitaxy anamandla aphezulu e-GaAs asetshenziswa kabanzi kwezokwelapha, kwezimboni, ocwaningweni lwesayensi nakwamanye amasimu ngenxa yokusebenza kwawo kahle, ukukhishwa kwamandla aphezulu kanye nokusebenza kahle kokushisa, futhi anenani elibalulekile lemakethe kanye namandla obuchwepheshe.

Sithumelele i-imeyili

Izici

Izici ezibalulekile zeshidi le-epitaxial le-laser le-GaAs zifaka:

1. Ukuhamba kwama-electron aphezulu: I-Gallium arsenide inokuhamba kwama-electron okuphezulu, okwenza ama-wafer epitaxial laser e-GaAs abe nezinhlelo ezinhle kumadivayisi anemvamisa ephezulu kanye namadivayisi kagesi anesivinini esikhulu.
2. Ukukhanya kokuguquka kwe-bandgap okuqondile: Njengento eqondile ye-bandgap, i-gallium arsenide ingaguqula amandla kagesi abe amandla okukhanya kumadivayisi e-optoelectronic, okwenza kube kuhle kakhulu ekwakhiweni kwama-laser.
3. Ubude be-Wavelength: Ama-laser e-GaAs 905 ngokuvamile asebenza ku-905 nm, okwenza afaneleke ezinhlelweni eziningi, kufaka phakathi i-biomedicine.
4. Ukusebenza kahle okuphezulu: ngokuguqulwa okuphezulu kwe-photoelectric, ingaguqula ngempumelelo amandla kagesi abe umphumela we-laser.
5. Ukukhishwa kwamandla aphezulu: Kungafinyelela ukukhishwa kwamandla aphezulu futhi kufanelekile ezimweni zohlelo lokusebenza ezidinga umthombo wokukhanya onamandla.
6. Ukusebenza kahle kokushisa: Izinto ze-GaAs zinokuqhuba okuhle kokushisa, okusiza ukunciphisa izinga lokushisa lokusebenza kwe-laser nokuthuthukisa ukuzinza.
7. Ukulungiswa okubanzi: Amandla okukhipha angalungiswa ngokushintsha i-drive current ukuze ivumelane nezidingo ezahlukene zohlelo lokusebenza.

Ukusetshenziswa okuyinhloko kwamaphilisi e-epitaxial e-laser ye-GaAs kufaka phakathi:

1. Ukuxhumana ngefayibha yokubona: Ishidi le-epitaxial le-laser ye-GaAs lingasetshenziswa ukukhiqiza ama-laser ekuxhumaneni ngefayibha yokubona ukuze kufezwe ukudluliselwa kwesignali yokubona okusheshayo nokude.

2. Izicelo zezimboni: Emkhakheni wezimboni, amashidi e-epitaxial e-laser e-GaAs angasetshenziswa ekuhlukaniseni i-laser, ukumakwa kwe-laser nezinye izinhlelo zokusebenza.

3. I-VCSEL: I-laser ekhipha ubuso obuqondile (i-VCSEL) iyinkambu ebalulekile yokusetshenziswa kweshidi le-epitaxial le-laser ye-GaAs, elisetshenziswa kabanzi ekuxhumaneni kwe-optical, isitoreji se-optical kanye nokuzwa kwe-optical.

4. Insimu ye-infrared kanye ne-spot: Ishidi le-epitaxial le-laser ye-GaAs lingasetshenziswa futhi ukukhiqiza ama-laser e-infrared, ama-spot generator kanye namanye amadivayisi, lidlala indima ebalulekile ekutholakaleni kwe-infrared, ukubonisa ukukhanya kanye nezinye izinkambu.

Ukulungiswa kweshidi le-epitaxial le-laser ye-GaAs kuncike kakhulu kubuchwepheshe bokukhula kwe-epitaxial, okuhlanganisa i-metal-organic chemical vapor deposition (MOCVD), i-molecular beam epitaxial (MBE) nezinye izindlela. Lawa masu angalawula ngokunembile ukujiya, ukwakheka kanye nesakhiwo sekristalu sengqimba ye-epitaxial ukuze kutholakale amashidi e-epitaxial le-laser ye-GaAs asezingeni eliphezulu.

I-XKH inikeza ukwenza ngokwezifiso amashidi e-epitaxial e-GaAs ngezakhiwo ezahlukene kanye nobukhulu, ehlanganisa izinhlelo zokusebenza eziningi kwezokuxhumana kwe-optical, i-VCSEL, amasimu e-infrared kanye nama-light spot. Imikhiqizo ye-XKH yakhiqizwa ngemishini ye-MOCVD ethuthukisiwe ukuqinisekisa ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuthutha, i-XKH ineziteshi eziningi zemithombo yamazwe ngamazwe, ezingaphatha inani lama-oda ngendlela eguquguqukayo, futhi zinikeze izinsizakalo ezengeziwe ezifana nokulungiswa kanye nokwahlukaniswa. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende zekhwalithi kanye nezikhathi zokulethwa. Amakhasimende angathola ukwesekwa kobuchwepheshe okuphelele kanye nensizakalo yangemva kokuthengisa ngemva kokufika ukuqinisekisa ukuthi umkhiqizo usetshenziswa kahle.