I-Electrode Sapphire Substrate kanye ne-Wafer C-plane LED Substrates

Incazelo emfushane:

Ngokusekelwe ekuthuthukisweni okuqhubekayo kobuchwepheshe be-sapphire kanye nokwanda okusheshayo kwemakethe yesicelo, ama-wafer e-substrate angu-4 intshi kanye no-6 intshi azosetshenziswa kakhulu yizinkampani ezinkulu ze-chip ngenxa yezinzuzo zawo ezingokwemvelo ekusetshenzisweni kokukhiqiza.


Izici

Imininingwane

JIKELELE

Ifomula Yamakhemikhali

I-Al2O3

Isakhiwo sekristalu

Uhlelo Lwesikwele (hk o 1)

Ubukhulu Beseli Leyunithi

a=4.758 Å,Å c=12.991 Å, c:a=2.730

OKUNGOKWEMZIMBA

 

I-Metric

IsiNgisi (uMbuso)

Ubuningi

3.98 g/cc

0.144 lb/in3

Ubulukhuni

1525 - 2000 Knoop, 9 mhos

3700° F

Indawo Yokuncibilika

2310 K (2040° C)

 

ISAKHIWO

Amandla Okudonsa

275 MPa kuya ku-400 MPa

40,000 kuya ku-58,000 psi

Amandla Okudonsa ku-20° C

 

58,000 psi (ubuncane bomklamo)

Amandla Okudonsa ku-500° C

 

40,000 psi (ubuncane bomklamo)

Amandla Okudonsa ku-1000° C

355 MPa

52,000 psi (ubuncane bomklamo)

I-Flexural Stength

480 MPa kuya ku-895 MPa

70,000 kuya ku-130,000 psi

Amandla Okucindezela

2.0 GPa (esiphezulu)

300,000 psi (okuphelele)

I-Sapphire njenge-substrate yesekethe ye-semiconductor

Ama-wafer amancane e-sapphire ayewukusetshenziswa kokuqala okuphumelelayo kwe-substrate yokuvikela lapho i-silicon yafakwa khona ukwakha amasekethe ahlanganisiwe abizwa ngokuthi i-silicon on sapphire (SOS). Ngaphezu kwezakhiwo zayo ezinhle kakhulu zokuvikela ugesi, i-sapphire ine-conductivity ephezulu yokushisa. Ama-chips e-CMOS ku-sapphire afaneleka kakhulu ezinhlelweni zomsakazo onamandla aphezulu (RF) njengezingcingo eziphathwayo, imisakazo yebhendi yokuphepha komphakathi kanye nezinhlelo zokuxhumana zesathelayithi.

Ama-wafer e-sapphire angamakristalu angasetshenziswa njengezinto ezisetshenziswa embonini ye-semiconductor yokukhulisa amadivayisi asekelwe ku-gallium nitride (GaN). Ukusetshenziswa kwe-sapphire kunciphisa kakhulu izindleko njengoba cishe kuyi-1/7th yezindleko ze-germanium. I-GaN ku-sapphire ivame ukusetshenziswa kuma-diode akhipha ukukhanya okuluhlaza okwesibhakabhaka (ama-LED).

Sebenzisa njengezinto zefasitela

I-sapphire yokwenziwa (ngezinye izikhathi ebizwa ngokuthi ingilazi ye-sapphire) ivame ukusetshenziswa njengendwangu yefasitela ngoba ikhanya kakhulu phakathi kwama-wavelength angu-150 nm (ultraviolet) kanye nama-wavelength angu-5500 nm (infrared) okukhanya (i-spectrum ebonakalayo isukela cishe ku-380 nm kuya ku-750 nm) futhi inokumelana okukhulu kakhulu nokuklwebheka. Izinzuzo ezibalulekile zamafasitela e-sapphire

Faka

I-bandwidth yokudlulisa okubonakalayo ebanzi kakhulu, kusukela ku-UV kuya ekukhanyeni okuseduze kwe-infrared

Kuqine kunezinye izinto ezibonakalayo noma amafasitela engilazi

Imelana kakhulu nokuklwebheka nokuklwebheka (ubulukhuni bamaminerali obungu-9 esikalini sikaMohs, bulandela idayimane ne-moissanite kuphela phakathi kwezinto zemvelo)

Indawo yokuncibilika ephezulu kakhulu (2030°C)

Umdwebo Oningiliziwe

I-Electrode Sapphire Substrate kanye ne-Wafer (1)
I-Electrode Sapphire Substrate kanye ne-Wafer (2)

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