I-Electrode Sapphire Substrate kanye ne-Wafer C-plane ye-LED Substrates

I-Electrode Sapphire Substrate ne-Wafer C-plane Ama-LED Substrates Isithombe Esifakiwe

Incazelo emfushane:

Ngokusekelwe ekuthuthukisweni okuqhubekayo kobuchwepheshe besafire kanye nokwanda okusheshayo kwemakethe yezicelo, ama-wafers angama-intshi angu-4 kanye nama-intshi angu-6 azokwamukelwa kakhulu izinkampani zama-chip ezivamile ngenxa yezinzuzo zazo ezingokwemvelo ekusetshenzisweni kokukhiqiza.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukucaciswa

JIKELELE
I-Chemical Formula	I-Al2O3
I-Crystal Stucture	Isistimu ye-Hexagonal (hk o 1)
Iyunithi Yeseli Dimension	a=4.758 Å,Å c=12.991 Å, c:a=2.730
EMZIMBENI
	Imethrikhi	IsiNgisi (Imperial)
Ukuminyana	3.98 g/cc	0.144 lb/ku-3
Ukuqina	1525 - 2000 Knoop, 9 mhos	3700° F
I-Melting Point	2310 K (2040° C)
ISAKHIWO
Amandla Okuqina	275 MPa ukuze 400 MPa	40,000 kuya ku-58,000 psi
Amandla Okuqina ku-20° C		58,000 psi (i-design min.)
Amandla Okuqina ku-500° C		40,000 psi (i-design min.)
Amandla Okuqina ku-1000° C	355 MPa	52,000 psi (i-design min.)
Amandla e-Flexural	480 MPa ukuze 895 MPa	70,000 kuya ku-130,000 psi
Amandla Wokucindezela	2.0 GPA (ekugcineni)	300,000 psi (ekugcineni)

I-Sapphire njenge-semiconductor circuit substrate

Amawafa amasafire azacile ayewukusetshenziswa kokuqala ngempumelelo kwe-substrate evikelayo lapho i-silicon yayifakwa khona ukuze kwenziwe amasekethe ahlanganisiwe abizwa ngokuthi i-silicon on sapphire (SOS). Ngaphezu kwezakhiwo zayo ezinhle kakhulu zokuvala ugesi, isafire ine-conductivity ephezulu yokushisa.Ama-CMOS ama-chip kusafire afaneleka ngokukhethekile izinhlelo zokusebenza zomsakazo wamandla aphezulu (RF) ezifana nomakhalekhukhwini, imisakazo yebhendi yokuphepha yomphakathi kanye nezinhlelo zokuxhumana ngesathelayithi.

Amawafa e-crystal sapphire eyodwa nawo asetshenziswa njengama-substrates embonini ye-semiconductor ekukhuliseni amadivayisi asekelwe ku-gallium nitride (GaN). Ukusetshenziswa kwesafire kunciphisa kakhulu izindleko njengoba cishe 1/7th izindleko ze-germanium.I-GaN kusafire ivame ukusetshenziswa kuma-blue light emitting diodes (LEDs).

Sebenzisa njengefasitela impahla

Isafire yokwenziwa (ngezinye izikhathi ebizwa ngokuthi ingilazi yesafire) ivamise ukusetshenziswa njengefasitela ngoba ikhanye kakhulu phakathi kuka-150 nm (ultraviolet) kanye no-5500 nm (infrared) wamaza okukhanya (ububanzi obubonakalayo busuka cishe ku-380 nm kuya ku-750 nm) futhi inokumelana okuphezulu kakhulu nokunwaya. Izinzuzo eziyinhloko zamafasitela esafire

Faka

I-bandwidth yokubona ebanzi kakhulu, ukusuka ku-UV ukuya ekukhanyeni okuseduze kwe-infrared

Iqinile kunezinye izinto ezibonakalayo noma amafasitela engilazi

Imelana kakhulu nokuklwejwa kanye nokuhuzuka (ukuqina kwamaminerali okungu-9 esikalini se-Mohs, okwesibili ngemva kwedayimane ne-moissanite phakathi kwezinto zemvelo)

Indawo yokuncibilika ephezulu kakhulu (2030°C)