Iwindi le-Dia50.8mm Sapphire Wafer Sapphire Iwindi Eliphezulu Lokudluliswa kwe-Optical DSP/SSP

Iwindi le-Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP Isithombe Esifakiwe

Incazelo emfushane:

Ngenxa ye-lattice engafani kahle nezindawo zamakhemikhali nezinzile ezinzile, i-wafer yesafire(Al2O3) iyindawo engaphansi edumile ye-III-V nitrides, i-superconductor ne-magnetic epi-film. Zisetshenziswa kakhulu ku-GaN kanye ne-filimi emincane ye-epitaxial ukukhula, i-silicon kusafire, imakethe ye-LED kanye nomkhakha we-optics.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Kungani iSapphire?

Izici zesafire yekristalu eyodwa
1. I-Sapphire ine-optical transmittance ephezulu, ngakho isetshenziswa kabanzi njenge-microelectronic tube dielectric material, i-ultrasonic conduction element, i-waveguide laser cavity, nezinye izakhi zokukhanya, njengezinto zefasitela zamadivayisi wezempi we-infrared, izimoto zasemkhathini, ama-laser anamandla kakhulu kanye ne-optical. ezokuxhumana.

2. Isafire inokuqina okuphezulu, amandla aphezulu, izinga lokushisa eliphezulu lokusebenza, ukumelana nemihuzuko, izici zokumelana nokugqwala, ngakho-ke i-sapphire substrate ivame ukusetshenziswa ezindaweni ezinokhahlo, njengegeji yamanzi e-boiler (ukumelana nokushisa okuphezulu), isithwebuli sekhodi yempahla, ukuthwala, nokunye ukukhiqiza okunembayo (ukungagugi), amalahle, igesi, izinzwa zokuthola umthombo namafasitela omtshina (anti-corrosion).

3. I-Sapphire inezici zokufaka ugesi kagesi, ukukhanya, ukuhamba kahle kwe-thermal, nokuqina okuphezulu, ngakho-ke ingasetshenziswa njenge-substrate impahla yama-circuits ahlanganisiwe, njenge-LED kanye ne-microelectronic circuits, i-ultra-high-speed edidiyelwe yesifunda.

Ukucaciswa

Ububanzi	50.8mm +/-0.1mm noma +/-0.02mm
Ubukhulu	0.43mm± 0.1mm noma +/-0.02mm
Ukuqondisa	I-C-plane/A-Plane/M-Plane/R-Plane
Ikhwalithi yobuso (ukuklwebha nokumba)	60/40, 40/20 noma ngaphezulu
Ukunemba kobuso	λ/10, λ/2, λ
Imbobo ecacile	>85%, >90%
Ukufana	+/-3', +/-30''
Bevel	0.1 ~ 0.3mm×45 degree
Ukugqoka	I-AR, i-BBAR noma ngesicelo sekhasimende (UV, VIS, IR)

Cha	Izakhiwo	Ithagethi	Ukubekezelelana	Ukuphawula
1	Ububanzi	50.8mm	± 0.1mm
2	Ubukhulu	430μm	±15μm
3	Umumo womphezulu wendiza ye-C	kusuka ku-C-eksisi ukuya ku-M0.2°	± 0.1°
4	Ubude obuyisicaba obuyisisekelo	16 mm	± 11mm
5	Umumo oyisicaba oyinhloko	Indiza (11-20)	±0.1°
6	Uhlangothi lwasemuva Ubulukhuni	0.8~1.2um
7	Ngaphambili I-roughness	<0.3nm
8	I-wafer edge	Uhlobo lwe-R
9	Ukuhlukahluka Kokuqina Okuphelele, i-TTV	≤ 10μm(LTV≤5μm, 5*5)
10	I-SORI	≤10μm
11	Khothama	-10 μm ≤ INQABA ≤ 0
12	I-Laser Mark	N/A		anginayo
	Iphakheji	Ama-wafer angama-25 kwikhasethi elilodwa
	Ikhono lokulandelela	Ama-wafers azolandeleka maqondana nenombolo yekhasethi

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