I-Dia150mm 4H-N 6inch SiC substrate Ukukhiqizwa kanye nebanga eliyimbumbulu
Izici eziyinhloko zama-wafers e-silicon carbide mosfet angu-6 intshi yilezi ezilandelayo;.
Ukumelana ne-voltage ephezulu: I-Silicon carbide inensimu kagesi ephukile kakhulu, ngakho-ke ama-wafer e-silicon carbide angama-intshi angu-6 anamandla okumelana ne-voltage ephezulu, afaneleka ezimweni zokusetshenziswa kwe-voltage ephezulu.
Ubuningi bamandla kagesi obuphezulu: I-Silicon carbide inokunyakaza okukhulu kwama-electron, okwenza ama-wafer e-silicon carbide mosfet angamasentimitha angu-6 abe nobukhulu bamandla kagesi obukhulu ukuze amelane nobuningi bamandla kagesi.
Imvamisa yokusebenza ephezulu: I-Silicon carbide inokunyakaza okuphansi kokuthwala, okwenza ama-wafer e-silicon carbide mosfet angamasentimitha angu-6 abe nemvamisa yokusebenza ephezulu, afanele izimo zokusetshenziswa kwemvamisa ephezulu.
Ukuqina okuhle kokushisa: I-Silicon carbide inokushisa okuphezulu, okwenza ama-wafer e-silicon carbide mosfet angamasentimitha angu-6 asasebenza kahle ezindaweni ezinokushisa okuphezulu.
Ama-wafer e-silicon carbide mosfet angamasentimitha angu-6 asetshenziswa kabanzi kulezi zindawo ezilandelayo: ama-electronics kagesi, kufaka phakathi ama-transformer, ama-rectifier, ama-inverter, ama-power amplifiers, njll., njengama-solar inverters, ukushaja izimoto ezintsha zamandla, ukuthuthwa kwezitimela, i-air compressor esheshayo ku-fuel cell, i-DC-DC converter (DCDC), i-electric vehicle motor drive kanye nezitayela zedijithali emkhakheni wezikhungo zedatha nezinye izindawo ezinezinhlelo zokusebenza eziningi.
Singakunikeza i-substrate ye-4H-N 6inch SiC, amazinga ahlukene ama-wafer esitokhwe se-substrate. Singahlela futhi ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela ukubuza!
Umdwebo Oningiliziwe
