I-Dia150mm 4H-N 6inch SiC substrate Production kanye nebanga le-dummy
Izici eziyinhloko ze-6 inch silicon carbide mosfet wafers zimi kanje;.
I-voltage ephezulu ukumelana: I-Silicon carbide inendawo kagesi ephukile, ngakho-ke ama-wafers we-silicon carbide mosfet angu-6 intshi anamandla okumelana nomthamo ophezulu, afanele izimo zokusetshenziswa kwamandla kagesi aphezulu.
Ukuminyana okuphezulu kwamanje: I-silicon carbide inokuhamba kwe-electron enkulu, okwenza ama-wafers e-silicon carbide mosfet angu-6 intshi abe nokuminyana okukhulu kwamanje ukuze amelane namanje.
Imvamisa yokusebenza ephezulu: I-silicon carbide inokuhamba kwenkampani yenethiwekhi ephansi, okwenza ama-wafers we-silicon carbide mosfet angama-intshi angu-6 abe ne-frequency yokusebenza ephezulu, afanele izimo zohlelo lokusebenza lwe-high-frequency.
Ukuzinza okuhle kwe-thermal: I-Silicon carbide ine-conductivity ephezulu ye-thermal, okwenza ama-wafers we-silicon carbide mosfet angu-6-intshi asesenokusebenza okuhle ezindaweni zokushisa okuphezulu.
6 inch silicon carbide mosfet wafers asetshenziswa kabanzi kulezi zindawo ezilandelayo: power electronics, kuhlanganise transformers, rectifiers, inverter, amplifiers amandla, njll, ezifana inverters solar, ukushaja imoto yamandla amasha, ezokuthutha ujantshi, high-speed air compressor in the i-fuel cell, i-DC-DC converter (DCDC), idrayivu yemoto kagesi kanye nezitayela zedijithali emkhakheni wezikhungo zedatha nezinye izindawo ezinohlu olubanzi lwezinhlelo zokusebenza.
Singahlinzeka nge-4H-N 6inch SiC substrate, amamaki ahlukene amawafa esitokwe angaphansi. Futhi singahlela ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela uphenyo!