I-SiC Seed Crystal Substrates Eyenziwe Ngokwezifiso Dia 205/203/208 4H-N Type for Optical Communications

I-SiC Seed Crystal Substrates Eyenziwe Ngokwezifiso Dia 205/203/208 4H-N Uhlobo Lokuxhumana Okubonakalayo Isithombe Esivelele

Incazelo emfushane:

Izingxenye zekristalu yembewu ye-SiC (silicon carbide), njengezithwali eziyinhloko zezinto ze-semiconductor zesizukulwane sesithathu, zisebenzisa ukuhanjiswa kwazo okuphezulu kokushisa (4.9 W/cm·K), amandla ensimu yokuqhekeka okuphezulu kakhulu (2–4 MV/cm), kanye ne-bandgap ebanzi (3.2 eV) ukuze zisebenze njengezinto eziyisisekelo ze-optoelectronics, izimoto zamandla amasha, ukuxhumana kwe-5G, kanye nezinhlelo zokusebenza zezindiza. Ngobuchwepheshe bokukhiqiza obuthuthukisiwe njengokuthutha komhwamuko ngokomzimba (PVT) kanye ne-liquid phase epitaxy (LPE), i-XKH inikeza izingxenye zembewu ze-polytype ze-4H/6H-N, i-semi-insulating, kanye ne-3C-SiC ngefomethi ye-wafer engu-2–12-intshi, enobukhulu be-micropipe ngaphansi kuka-0.3 cm⁻², ukumelana okusukela ku-20–23 mΩ·cm, kanye nokuqina kobuso (Ra) <0.2 nm. Izinsizakalo zethu zifaka phakathi ukukhula kwe-heteroepitaxial (isb., i-SiC-on-Si), ukucutshungulwa kokunemba kwe-nanoscale (± 0.1 μm tolerance), kanye nokulethwa okusheshayo emhlabeni jikelele, okunika amandla amaklayenti ukunqoba izithiyo zobuchwepheshe nokusheshisa ukungathathi hlangothi kwekhabhoni kanye nokuguqulwa okuhlakaniphile.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

I-silicon carbide seed wafer
Uhlobo lwe-Polytype	4H
Iphutha lokuma kwendawo	4°ukuya<11-20>±0.5º
Ukumelana	ukwenza ngokwezifiso
Ububanzi	205±0.5mm
Ubukhulu	600±50μm
Ubulukhuni	I-CMP,Ra≤0.2nm
Ubuningi be-Micropipe	≤1 ngayinye/cm2
Ukuklwebheka	≤5, Ubude obuphelele ≤2 * Ububanzi
Ama-edge chips/indents	Akukho
Ukumaka nge-laser yangaphambili	Akukho
Ukuklwebheka	≤2, Ubude obuphelele ≤ Ububanzi
Ama-edge chips/indents	Akukho
Izindawo ze-Polytype	Akukho
Ukumaka nge-laser yangemuva	1mm (kusukela onqenqemeni oluphezulu)
Umphetho	I-Chamfer
Ukupakisha	Ikhasethi ye-multi-wafer

Izici Eziyinhloko

1. Isakhiwo sekristalu kanye nokusebenza kukagesi

· Ukuzinza kwe-Crystallographic: Ukubusa kwe-polytype engu-100% 4H-SiC, ukufakwa kwe-multicrystalline okungu-zero (isb., 6H/15R), nge-XRD rocking curve egcwele ububanzi obuphelele ku-half-maximum (FWHM) ≤32.7 arcsec.

· Ukuhamba Okuphezulu Kwesithwali: Ukuhamba kwe-electron okungu-5,400 cm²/V·s (4H-SiC) kanye nokuhamba kwemigodi okungu-380 cm²/V·s, okuvumela ukwakheka kwamadivayisi anemvamisa ephezulu.

·Ukuqina Kwemisebe: Imelana nemisebe ye-neutron engu-1 MeV enomkhawulo womonakalo wokufuduka ongu-1×10¹⁵ n/cm², ofanele ukusetshenziswa kwezindiza kanye nezinhlelo zenuzi.

2. Izakhiwo Zokushisa Nezomshini

· Ukushisa Okumangalisayo: 4.9 W/cm·K (4H-SiC), okuphindwe kathathu kune-silicon, okusekela ukusebenza okungaphezu kuka-200°C.

· I-Coefficient Yokukhulisa Ukushisa Okuphansi: I-CTE engu-4.0×10⁻⁶/K (25–1000°C), okuqinisekisa ukuhambisana nokupakishwa okusekelwe ku-silicon nokunciphisa ukucindezeleka kokushisa.

3. Ukulawula Okuphelele Nokucubungula Okunembile

· Ubuningi be-Micropipe: <0.3 cm⁻² (ama-wafer angu-8 intshi), ubuningi be-dislocation <1,000 cm⁻² (kuqinisekiswe nge-KOH etching).

· Ikhwalithi Yomphezulu: I-CMP-ipholishwe ku-Ra <0.2 nm, ihlangabezana nezidingo ze-EUV lithography-grade flatness.

Izinhlelo Zokusebenza Eziyinhloko

Isizinda	Izimo Zokusebenza	Izinzuzo Zobuchwepheshe
Ukuxhumana Kwamehlo	Amamojula e-100G/400G e-laser, i-silicon photonics hybrid	Izingxenye zembewu ze-InP zivumela i-bandgap eqondile (1.34 eV) kanye ne-heteroepitaxy esekelwe ku-Si, okunciphisa ukulahleka kokuxhumanisa kwe-optical.
Izimoto Ezintsha Zamandla	Ama-inverter aphezulu angu-800V, amashaja angaphakathi (OBC)	Ama-substrate angu-4H-SiC amelana no->1,200 V, okunciphisa ukulahlekelwa kokuqhuba ngo-50% kanye nomthamo wesistimu ngo-40%.
Ukuxhumana kwe-5G	Amadivayisi e-RF angamagagasi e-Millimeter (PA/LNA), ama-amplifier kagesi esiteshini esiyisisekelo	Ama-substrate e-SiC angenawo umswakama (ukumelana >10⁵ Ω·cm) avumela ukuhlanganiswa okungenamsebenzi kwe-high-frequency (60 GHz+).
Imishini Yezimboni	Izinzwa zokushisa okuphezulu, ama-transformer amanje, izikrini ze-reactor yenuzi	Izingxenye zembewu ze-InSb (i-bandgap engu-0.17 eV) zinikeza ukuzwela okunamandla okufika ku-300% @ 10 T.

Izinzuzo Eziyinhloko

Izisekelo zekristalu yembewu ye-SiC (i-silicon carbide) zinikeza ukusebenza okungenakuqhathaniswa nge-4.9 W/cm·K thermal conductivity, amandla ensimu yokuqhekeka kwe-2–4 MV/cm, kanye ne-bandgap ebanzi engu-3.2 eV, okuvumela ukusetshenziswa kwamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. Njengoba ine-zero micropipe density kanye ne-<1,000 cm⁻² dislocation density, lezi zisekelo ziqinisekisa ukuthembeka ezimweni ezimbi kakhulu. Ukungakwazi kwazo ukusebenzisa amakhemikhali kanye nezindawo ezihambisana ne-CVD (Ra <0.2 nm) zisekela ukukhula kwe-heteroepitaxial okuthuthukisiwe (isb., i-SiC-on-Si) yezinhlelo zamandla ze-optoelectronics kanye ne-EV.

Izinsizakalo ze-XKH:

1. Ukukhiqizwa Kwenziwe Ngokwezifiso

· Amafomethi e-Wafer Aguquguqukayo: Ama-wafer angu-2–12 intshi anokusika okuyisiyingi, okuyisikwele, noma okwenziwe ngokwezifiso (± 0.01 mm ukubekezelelana).

· Ukulawulwa Kokusebenzisa Izidakamizwa: Ukusebenzisa i-nitrogen (N) kanye ne-aluminium (Al) ngendlela enembile nge-CVD, okufinyelela ukumelana okuphakathi kuka-10⁻³ kuya ku-10⁶ Ω·cm.

2. Ubuchwepheshe Bezinqubo Ezithuthukisiwe.

· I-Heteroepitaxy: I-SiC-on-Si (iyahambisana nemigqa ye-silicon engu-8-intshi) kanye ne-SiC-on-Diamond (ukushisa okuhambayo >2,000 W/m·K).

· Ukunciphisa Amaphutha: Ukucwiliswa kwe-hydrogen kanye nokunamathisela ukuze kuncishiswe amaphutha e-micropipe/density, kuthuthukiswe isivuno se-wafer sibe ngaphezulu kwama-95%.

3. Izinhlelo Zokuphatha Ikhwalithi.

· Ukuhlolwa Kokuphela: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), kanye ne-SEM (ukuhlaziywa kwamaphutha).

· Izitifiketi: Zihambisana ne-AEC-Q101 (izimoto), i-JEDEC (JEDEC-033), kanye ne-MIL-PRF-38534 (yezinga lezempi).

4. Ukusekelwa Kochungechunge Lokuphakelwa Komhlaba Wonke.

· Amandla Okukhiqiza: Umkhiqizo wanyanga zonke > ama-wafer angu-10,000 (60% amasentimitha angu-8), kanye nokulethwa okuphuthumayo kwamahora angu-48.

· Inethiwekhi Yezokuthutha: Ukumbozwa eYurophu, eNyakatho Melika, nase-Asia-Pacific ngemithwalo yendiza/yasolwandle enokupakishwa okulawulwa amazinga okushisa.

5. Ukuthuthukiswa Kobuchwepheshe Ngokubambisana.

· Amalebhu Ocwaningo Nokuthuthukiswa Okuhlangene: Bambisana ekwenzeni ngcono ukupakishwa kwemojuli yamandla e-SiC (isb., ukuhlanganiswa kwe-substrate ye-DBC).

· Ilayisense ye-IP: Nikeza ilayisense yobuchwepheshe bokukhula kwe-epitaxial ye-GaN-on-SiC RF ukuze kuncishiswe izindleko ze-R&D zamakhasimende.

Isifinyezo

Izingxenye zekristalu yembewu ye-SiC (silicon carbide), njengezinto ezisetshenziswayo, ziphinda zibumbe izintambo zezimboni zomhlaba wonke ngokusebenzisa impumelelo ekukhuleni kwekristalu, ukulawulwa kwezinkinga, kanye nokuhlanganiswa okungafani. Ngokuqhubeka nokuthuthukisa ukunciphisa izinkinga ze-wafer, ukwandisa ukukhiqizwa kwamasentimitha angu-8, kanye nokwandisa amapulatifomu e-heteroepitaxial (isb., i-SiC-on-Diamond), i-XKH iletha izixazululo ezinokwethenjelwa kakhulu nezingabizi kakhulu ze-optoelectronics, amandla amasha, kanye nokukhiqiza okuthuthukile. Ukuzibophezela kwethu ekusunguleni izinto ezintsha kuqinisekisa ukuthi amakhasimende ahola ekungathathi hlangothi kwekhabhoni kanye nezinhlelo ezihlakaniphile, okuqhuba inkathi elandelayo yezindawo zemvelo ze-semiconductor ezibanzi.