Ama-Wafer e-Epitaxial e-GaN-on-SiC enziwe ngokwezifiso (100mm, 150mm) – Izinketho Eziningi Ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)

Incazelo emfushane:

Ama-Epitaxial Wafer ethu e-GaN-on-SiC Epitaxial Wafers enziwe ngokwezifiso anikeza ukusebenza okuphezulu kwezinhlelo zokusebenza ezinamandla aphezulu, ezivame kakhulu ngokuhlanganisa izakhiwo ezivelele ze-Gallium Nitride (GaN) kanye nokushisa okuqinile kanye namandla omshini we-I-Silicon Carbide (i-SiC). Zitholakala ngobukhulu be-wafer obuyi-100mm no-150mm, lawa ma-wafer akhiwe ngezinketho ezahlukene ze-substrate ze-SiC, kufaka phakathi izinhlobo ze-4H-N, HPSI, kanye ne-4H/6H-P, ezenzelwe ukuhlangabezana nezidingo ezithile zama-electronics kagesi, ama-RF amplifiers, kanye namanye amadivayisi e-semiconductor athuthukile. Ngezendlalelo ze-epitaxial ezingenziwa ngokwezifiso kanye ne-substrates ze-SiC ezihlukile, ama-wafer ethu aklanyelwe ukuqinisekisa ukusebenza kahle okuphezulu, ukuphathwa kokushisa, kanye nokuthembeka kwezicelo zezimboni ezidinga kakhulu.

Sithumelele i-imeyili

Izici

●Ubukhulu Besendlalelo Se-Epitaxial: Kungenziwa ngezifiso kusukela1.0 µmku-3.5 µm, elungiselelwe amandla aphezulu kanye nokusebenza kwemvamisa.

●Izinketho ze-SiC Substrate: Itholakala ngezinhlobo ezahlukene ze-SiC substrates, okuhlanganisa:

4H-N: I-4H-SiC efakwe i-nitrogen esezingeni eliphezulu yezinhlelo zokusebenza ezisebenza ngesivinini esikhulu namandla aphezulu.
I-HPSI: I-High-Purity Semi-Insulating SiC yezinhlelo zokusebenza ezidinga ukuhlukaniswa kukagesi.
4H/6H-P: I-4H exubile kanye ne-6H-SiC ukuze kube nebhalansi yokusebenza kahle kanye nokuthembeka okuphezulu.

●Usayizi We-Wafer: Itholakala ngo100mmfuthi150mmububanzi bokuguquguquka ekulinganisweni nasekuhlanganisweni kwedivayisi.

●I-Voltage Ephezulu Yokuqhekeka: Ubuchwepheshe be-GaN ku-SiC buhlinzeka nge-voltage ephezulu yokuqhekeka, okuvumela ukusebenza okuqinile ezinhlelweni zokusebenza ezinamandla aphezulu.

●Ukushisa Okuphezulu: Ukushisa okungokwemvelo kwe-SiC (cishe 490 W/m·K) iqinisekisa ukushabalaliswa kokushisa okuhle kakhulu kwezicelo ezisebenzisa ugesi omningi.

Imininingwane Yobuchwepheshe

Ipharamitha	Inani
Ububanzi be-Wafer	100mm, 150mm
Ubukhulu Besendlalelo se-Epitaxial	1.0 µm – 3.5 µm (kungenziwa ngezifiso)
Izinhlobo ze-SiC Substrate	4H-N, HPSI, 4H/6H-P
Ukuqhuba Kokushisa kwe-SiC	490 W/m·K
Ukumelana ne-SiC	4H-N: 10^6 Ω·cm,I-HPSI: Okungavimbeli Kancane,4H/6H-P: Okuxubile okungu-4H/6H
Ubukhulu Besendlalelo se-GaN	1.0 µm – 2.0 µm
Ukugxila Kwesithwali se-GaN	10^18 cm^-3 kuya ku-10^19 cm^-3 (kungenziwa ngezifiso)
Ikhwalithi Yomphezulu We-Wafer	Ukuqina kwe-RMS: < 1 nm
Ubuningi bokuhlukaniswa	< 1 x 10^6 cm^-2
Umnsalo we-Wafer	< 50 µm
I-Wafer Flatness	< 5 µm
Izinga Lokushisa Eliphezulu Lokusebenza	400°C (okuvamile kumadivayisi e-GaN-on-SiC)

Izicelo

●Izinto zikagesi zamandla:Ama-wafer e-GaN-on-SiC ahlinzeka ngokusebenza kahle kakhulu kanye nokushabalalisa ukushisa, okwenza abe mahle kakhulu kuma-amplifiers kagesi, amadivayisi okuguqula amandla, kanye namasekethe e-power-inverter asetshenziswa ezimotweni zikagesi, ezinhlelweni zamandla avuselelekayo, kanye nemishini yezimboni.
●Ama-RF Power Amplifier:Inhlanganisela ye-GaN ne-SiC ilungele izinhlelo zokusebenza ze-RF ezisebenza ngesivinini esiphezulu nezinamandla aphezulu njengokuxhumana ngocingo, ukuxhumana ngesathelayithi, kanye nezinhlelo ze-radar.
●Isikhala Sezindiza Nokuzivikela:Lawa ma-wafer afanele ubuchwepheshe bezindiza kanye nokuzivikela obudinga izinhlelo ze-elekthronikhi zamandla aphezulu kanye nezokuxhumana ezingasebenza ngaphansi kwezimo ezinzima.
●Izicelo Zezimoto:Ilungele izinhlelo zamandla ezisebenza kahle kakhulu ezimotweni zikagesi (ama-EV), ezimotweni ezixubile (ama-HEV), kanye neziteshi zokushaja, okuvumela ukuguqulwa nokulawula kwamandla okuphumelelayo.
●Izinhlelo Zezempi Neze-Radar:Ama-wafer e-GaN-on-SiC asetshenziswa ezinhlelweni ze-radar ngenxa yokusebenza kahle kwawo okuphezulu, amakhono okuphatha amandla, kanye nokusebenza kokushisa ezindaweni ezidinga amandla amaningi.
●Izicelo ze-Microwave kanye ne-Millimeter-Wave:Kuzinhlelo zokuxhumana zesizukulwane esilandelayo, okuhlanganisa ne-5G, i-GaN-on-SiC inikeza ukusebenza okuhle kakhulu kumazinga aphezulu e-microwave kanye nama-millimeter-wave.

Imibuzo Nezimpendulo

Umbuzo 1: Yiziphi izinzuzo zokusebenzisa i-SiC njengesisekelo se-GaN?

A1:I-Silicon Carbide (SiC) inikeza ukuhanjiswa kokushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye namandla omshini uma kuqhathaniswa ne-substrates zendabuko njenge-silicon. Lokhu kwenza ama-wafer e-GaN-on-SiC afaneleke kakhulu ekusetshenzisweni kwamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. I-substrate ye-SiC isiza ekuqedeni ukushisa okukhiqizwa amadivayisi e-GaN, okuthuthukisa ukuthembeka nokusebenza.

Q2: Ingabe ukujiya kwesendlalelo se-epitaxial kungenziwa ngokwezifiso zezinhlelo zokusebenza ezithile?

A2:Yebo, ubukhulu besendlalelo se-epitaxial bungenziwa ngezifiso ngaphakathi kobubanzi obuhlukahlukene1.0 µm kuya ku-3.5 µm, kuye ngezidingo zamandla kanye nemvamisa yohlelo lwakho lokusebenza. Singakwazi ukwenza ukujiya kwesendlalelo se-GaN ukuze sithuthukise ukusebenza kwamadivayisi athile afana nama-power amplifier, izinhlelo ze-RF, noma amasekethe anemvamisa ephezulu.

Umbuzo 3: Uyini umehluko phakathi kwe-4H-N, HPSI, kanye ne-4H/6H-P SiC substrates?

A3:

4H-N: I-4H-SiC ene-nitrogen ivame ukusetshenziswa ezinhlelweni zokusebenza ezivame kakhulu ezidinga ukusebenza okuphezulu kwe-elekthronikhi.
I-HPSI: I-High-Purity Semi-Insulating SiC inikeza ukuhlukaniswa kukagesi, okulungele izinhlelo zokusebenza ezidinga ukuhanjiswa kukagesi okuncane.
4H/6H-P: Ingxube ye-4H kanye ne-6H-SiC elinganisela ukusebenza, enikeza inhlanganisela yokusebenza kahle kanye nokuqina, efanelekela izinhlelo zokusebenza ezahlukahlukene ze-elekthronikhi zamandla.

Umbuzo 4: Ingabe lawa ma-wafer e-GaN-on-SiC afanele ukusetshenziswa kwamandla aphezulu njengezimoto zikagesi kanye namandla avuselelekayo?

A4:Yebo, ama-wafer e-GaN-on-SiC afaneleka kahle ukusetshenziswa kwamandla aphezulu njengezimoto zikagesi, amandla avuselelekayo, kanye nezinhlelo zezimboni. Amandla aphezulu okuphazamiseka, ukuhanjiswa kokushisa okuphezulu, kanye namakhono okuphatha amandla amadivayisi e-GaN-on-SiC awenza akwazi ukusebenza kahle kumasekethe okuguqula amandla adingekayo kanye nokulawula.

Umbuzo 5: Iyini i-dislocation density evamile yalezi wafers?

A5:Ubuningi bokuhlukaniswa kwalawa ma-wafer e-GaN-on-SiC ngokuvamile buyi-< 1 x 10^6 cm^-2, okuqinisekisa ukukhula kwe-epitaxial kwekhwalithi ephezulu, kunciphisa amaphutha kanye nokuthuthukisa ukusebenza kwedivayisi kanye nokuthembeka.

Umbuzo 6: Ngingacela usayizi othize we-wafer noma uhlobo lwe-substrate ye-SiC?

A6:Yebo, sinikeza osayizi be-wafer abakhelwe wena (100mm no-150mm) kanye nezinhlobo ze-SiC substrate (4H-N, HPSI, 4H/6H-P) ukuze kuhlangatshezwane nezidingo ezithile zesicelo sakho. Sicela uxhumane nathi ukuze uthole ezinye izinketho zokwenza ngokwezifiso kanye nokuxoxa ngezidingo zakho.

Umbuzo 7: Ama-wafer e-GaN-on-SiC asebenza kanjani ezindaweni ezibucayi kakhulu?

A7:Ama-wafer e-GaN-on-SiC afaneleka kakhulu ezindaweni ezibucayi ngenxa yokuqina kwawo okuphezulu kokushisa, ukuphathwa kwamandla aphezulu, kanye namakhono amahle kakhulu okuhlakaza ukushisa. Lawa ma-wafer asebenza kahle ezimweni zokushisa okuphezulu, amandla aphezulu, kanye nezimo zemvamisa ephezulu ezivame ukuhlangatshezwa ezindiza, ukuzivikela, kanye nezicelo zezimboni.

Isiphetho

Ama-Wafer ethu e-GaN-on-SiC Epitaxial Wafers enziwe ngokwezifiso ahlanganisa izakhiwo ezithuthukisiwe ze-GaN ne-SiC ukuze ahlinzeke ngokusebenza okuphezulu kakhulu kwizicelo zamandla aphezulu kanye nemvamisa ephezulu. Ngezinketho eziningi ze-substrate ze-SiC kanye nezendlalelo ze-epitaxial ezingenziwa ngokwezifiso, lawa ma-wafers afanele izimboni ezidinga ukusebenza kahle okuphezulu, ukuphathwa kokushisa, kanye nokuthembeka. Kungakhathaliseki ukuthi asebenza ngogesi, izinhlelo ze-RF, noma izinhlelo zokuzivikela, ama-wafers ethu e-GaN-on-SiC anikeza ukusebenza kanye nokuguquguquka okudingayo.