Ama-GaN-on-SiC Epitaxial Wafer Enziwe ngokwezifiso (100mm, 150mm) – Izinketho Eziningi Ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)

Ama-GaN-on-SiC Epitaxial Wafers Enziwe ngokwezifiso (100mm, 150mm) – Izinketho Eziningi Ze-SiC Substrate (4H-N, HPSI, 4H/6H-P) Isithombe Esifakiwe

Incazelo emfushane:

I-GaN-on-SiC Epitaxial Wafers yethu eyenziwe ngokwezifiso ihlinzeka ngokusebenza okuphezulu kwamandla aphezulu, izinhlelo zokusebenza zemvamisa ephezulu ngokuhlanganisa izakhiwo ezihlukile ze-Gallium Nitride (GaN) ne-thermal conductivity enamandla namandla emishiniI-Silicon Carbide (SiC). Atholakala ngosayizi we-wafer ongu-100mm no-150mm, lawa mawafa akhelwe ezinhlobonhlobo zezinketho ze-SiC substrate, okuhlanganisa i-4H-N, HPSI, kanye nezinhlobo ze-4H/6H-P, enzelwe ukuhlangabezana nezidingo ezithile zama-electronics amandla, ama-amplifiers e-RF, namanye ama-semiconductor athuthukile amadivayisi. Ngezendlalelo ze-epitaxial ezenziwe ngokwezifiso kanye nama-substrates e-SiC ahlukile, ama-wafers ethu aklanyelwe ukuqinisekisa ukusebenza kahle okuphezulu, ukuphathwa okushisayo, nokuthembeka kwezicelo zezimboni ezifunayo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici

●Epitaxial Layer Thickness: Yenza ngokwezifiso kusuka1.0 µmku3.5µm, elungiselelwe amandla aphezulu nokusebenza kwemvamisa.

● Izinketho ze-SiC Substrate: Itholakala ngama-substrates e-SiC ahlukahlukene, okuhlanganisa:

4H-N: Ikhwalithi ephezulu ye-Nitrogen-doped 4H-SiC ye-high-frequency, izicelo zamandla aphezulu.
I-HPSI: I-High-Purity Semi-Insulating SiC yezinhlelo zokusebenza ezidinga ukuhlukaniswa kukagesi.
4H/6H-P: I-4H ehlanganisiwe ne-6H-SiC ukuze kube nebhalansi yokusebenza kahle okuphezulu nokuthembeka.

● Osayizi be-Wafer: Itholakala ku100mmfuthi150mmamadayamitha okusebenza ngezindlela ezihlukahlukene ekukaleni idivayisi nasekuhlanganiseni.

●I-Voltage Yokuhlukana Okuphezulu: I-GaN kubuchwepheshe be-SiC inikeza i-voltage ephezulu yokuphuka, ivumela ukusebenza okuqinile ezinhlelweni zokusebenza zamandla aphezulu.

● High Thermal Conductivity: I-SiC's conductivity yemvelo eshisayo (cishe 490 W/m·K) iqinisekisa ukuchithwa kokushisa okuhle kakhulu kwezinhlelo zokusebenza ezidinga amandla amaningi.

Imininingwane Yezobuchwepheshe

Ipharamitha	Inani
I-Wafer Diameter	100mm, 150mm
I-Epitaxial Layer Thickness	1.0 µm – 3.5 µm (kuyenzeka ngokwezifiso)
Izinhlobo ze-SiC Substrate	4H-N, HPSI, 4H/6H-P
I-SiC Thermal Conductivity	490 W/m·K
I-SiC Resistivity	4H-N: 10^6 Ω·cm,I-HPSI: I-Semi-Insulating,4H/6H-P: Kuxutshwe 4H/6H
Ukuqina Kwengqimba ye-GaN	1.0 µm – 2.0 µm
I-GaN Carrier Concentration	10^18 cm^-3 ukuya ku-10^19 cm^-3 (kungenzeka ngendlela oyifisayo)
Ikhwalithi ye-Wafer Surface	Ukuqina kwe-RMS< 1 nm
Ukuminyana Kokususwa	< 1 x 10^6 cm^-2
I-Wafer Bow	<50µm
I-Wafer Flatness	<5µm
Ubukhulu Bezinga Lokushisa Lokusebenza	400°C (okujwayelekile kumadivayisi e-GaN-on-SiC)

Izinhlelo zokusebenza

●Amandla kagesi:Amawafa e-GaN-on-SiC ahlinzeka ngokusebenza kahle okuphezulu kanye nokuchithwa kokushisa, okuwenza alungele izikhulisamandla zamandla, amadivaysi okuguqula amandla, namasekethe okuguqula amandla asetshenziswa ezimotweni zikagesi, izinhlelo zamandla avuselelekayo, nemishini yezimboni.
● Izikhulisamandla ze-RF:Inhlanganisela ye-GaN ne-SiC ilungele imvamisa ephezulu, izinhlelo zokusebenza ze-RF ezinamandla kakhulu njengezokuxhumana ngocingo, ukuxhumana ngesathelayithi, namasistimu e-radar.
● Umkhathi nokuvikela:Lawa mawafa afanele ubuchwepheshe be-aerospace kanye nokuvikela obudinga amandla kagesi asebenza kahle kanye nezinhlelo zokuxhumana ezingasebenza ngaphansi kwezimo ezinzima.
●Izicelo Zezimoto:Ilungele amasistimu wamandla asebenza kahle ezimotweni zikagesi (EVs), ezimotweni ezixubile (ama-HEV), neziteshi zokushaja, okuvumela ukuguqulwa nokulawula kwamandla okusebenzayo.
●Amasistimu Wezempi Nerada:Amawafa e-GaN-on-SiC asetshenziswa ezinhlelweni ze-radar ngokusebenza kahle kwawo okuphezulu, amandla okubamba amandla, nokusebenza okushisayo ezindaweni ezidinga kakhulu.
●Izicelo zeMicrowave ne-Millimeter-Wave:Kuzinhlelo zokuxhumana zesizukulwane esilandelayo, okuhlanganisa i-5G, i-GaN-on-SiC inikeza ukusebenza okuphezulu ku-microwave enamandla amakhulu kanye nobubanzi begagasi be-millimeter.

Q&A

Q1: Yiziphi izinzuzo zokusebenzisa i-SiC njenge-substrate ye-GaN?

A1:I-Silicon Carbide (SiC) inikezela nge-thermal conductivity ephakeme kakhulu, i-voltage ephezulu yokuphuka, namandla emishini uma kuqhathaniswa nama-substrates endabuko afana ne-silicon. Lokhu kwenza amawafa e-GaN-on-SiC alungele ukusetshenziswa kwamandla aphezulu, imvamisa ephezulu, kanye nezinga eliphezulu lokushisa. I-substrate ye-SiC isiza ukuqeda ukushisa okukhiqizwa amadivayisi we-GaN, ithuthukise ukwethembeka nokusebenza.

I-Q2: Ingabe ugqinsi lwe-epitaxial layer lungenziwa ngezifiso izinhlelo zokusebenza ezithile?

A2:Yebo, ukujiya kwesendlalelo se-epitaxial kungenziwa ngezifiso phakathi kwebanga1.0 µm ukuya ku-3.5 µm, kuye ngamandla nezidingo zemvamisa yohlelo lwakho lokusebenza. Singalungisa ukujiya kwesendlalelo se-GaN ukuze sithuthukise ukusebenza kwamadivayisi athile njengezikhulisi zamandla, amasistimu e-RF, noma amasekhethi amaza aphezulu.

Q3: Uyini umehluko phakathi kwe-4H-N, HPSI, kanye ne-4H/6H-P SiC substrates?

A3:

4H-N: I-Nitrogen-doped 4H-SiC ivamise ukusetshenziselwa izinhlelo zokusebenza zemvamisa ephezulu ezidinga ukusebenza okuphezulu kwe-elekthronikhi.
I-HPSI: I-High-Purity Semi-Insulating SiC ihlinzeka ngokuhlukaniswa kukagesi, ilungele izinhlelo zokusebenza ezidinga ukuhanjiswa kagesi okuncane.
4H/6H-P: Ingxube ye-4H kanye ne-6H-SiC ebhalansisa ukusebenza, enikeza inhlanganisela yokusebenza kahle okuphezulu nokuqina, efanele izinhlelo zokusebenza ezihlukahlukene zamandla kagesi.

I-Q4: Ingabe lawa mawafa e-GaN-on-SiC alungele ukusetshenziswa kwamandla aphezulu njengezimoto zikagesi namandla avuselelekayo?

A4:Yebo, amawafa e-GaN-on-SiC afaneleka kahle ekusetshenzisweni kwamandla aphezulu njengezimoto zikagesi, amandla avuselelekayo, nezinhlelo zezimboni. I-voltage ephezulu yokuphuka, i-thermal conductivity ephezulu, namandla okubamba amandla wamadivayisi we-GaN-on-SiC abenza bakwazi ukusebenza ngempumelelo ekufuneni ukuguqulwa kwamandla nokulawula amasekhethi.

I-Q5: Iyini i-dislocation density evamile yalawa mawafa?

A5:Ukuminyana kokususwa kwalawa mawafa e-GaN-on-SiC kuvame ukubakhona< 1 x 10^6 cm^-2, okuqinisekisa ukukhula kwekhwalithi ephezulu kwe-epitaxial, ukunciphisa amaphutha nokuthuthukisa ukusebenza kwedivayisi nokuthembeka.

Q6: Ngingakwazi ukucela usayizi othile we-wafer noma uhlobo lwe-SiC substrate?

A6:Yebo, sinikeza osayizi be-wafer abenziwe ngokwezifiso (100mm kanye ne-150mm) nezinhlobo ze-SiC substrate (4H-N, HPSI, 4H/6H-P) ukuze kuhlangatshezwane nezidingo ezithile zohlelo lwakho lokusebenza. Sicela usithinte ukuze uthole ezinye izinketho zokwenza ngokwezifiso futhi uxoxe ngezidingo zakho.

Q7: Asebenza kanjani amawafa e-GaN-on-SiC ezindaweni ezeqisayo?

A7:Amawafa e-GaN-on-SiC alungele izindawo eziyingozi kakhulu ngenxa yokuzinza kwawo okushisayo, ukuphatha amandla aphezulu, namandla amahle kakhulu okukhipha ukushisa. Lawa mawafa enza kahle kumazinga okushisa aphezulu, amandla aphezulu, nezimo zokuvama okuphezulu okuvamise ukuhlangana nazo ku-aerospace, ukuvikela, kanye nezinhlelo zokusebenza zezimboni.

Isiphetho

I-GaN-on-SiC Epitaxial Wafers yethu Eyenziwe Ngokwezifiso ihlanganisa izici ezithuthukisiwe ze-GaN ne-SiC ukuze zinikeze ukusebenza okuphakeme kuzinhlelo zokusebenza zamandla aphezulu kanye nemvamisa ephezulu. Ngezinketho eziningi ze-substrate ye-SiC kanye nezendlalelo ze-epitaxial ezenziwe ngokwezifiso, lawa mawafa alungele izimboni ezidinga ukusebenza kahle okuphezulu, ukuphathwa okushisayo, nokuthembeka. Noma ngabe ngama-electronics amandla, amasistimu e-RF, noma izinhlelo zokusebenza zokuvikela, amawafa ethu e-GaN-on-SiC anikeza ukusebenza nokuvumelana nezimo okudingayo.