I-Substrate Yembewu Ye-SiC Yohlobo Lwe-N Yenziwe Ngokwezifiso I-Dia153/155mm Ye-Elektroniki Yamandla

I-Substrate Yembewu Ye-SiC Yohlobo Lwe-N Eyenziwe Ngokwezifiso I-Dia153/155mm Ye-Elektroniki Yamandla Isithombe Esivelele

Incazelo emfushane:

Izisekelo zembewu ze-Silicon Carbide (SiC) zisebenza njengezinto eziyisisekelo zama-semiconductor esizukulwane sesithathu, ahlukaniswa ngokuqhutshwa kwawo kokushisa okuphezulu kakhulu, amandla ensimu kagesi aqhekeka kakhulu, kanye nokuhamba okuphezulu kwama-electron. Lezi zakhiwo zizenza zibe yinto ebalulekile kuma-electronics kagesi, amadivayisi e-RF, izimoto zikagesi (ama-EV), kanye nezinhlelo zokusebenza zamandla avuselelekayo. I-XKH igxile ku-R&D kanye nokukhiqizwa kwezisekelo zembewu ze-SiC ezisezingeni eliphezulu, isebenzisa amasu okukhula kwekristalu athuthukile njenge-Physical Vapor Transport (PVT) kanye ne-High-Temperature Chemical Vapor Deposition (HTCVD) ukuqinisekisa ikhwalithi yekristalu ehamba phambili embonini.

Sithumelele i-imeyili

Izici

Ngenisa

I-XKH inikeza izisekelo zembewu ze-SiC ezingamasentimitha angu-4, amasentimitha angu-6, kanye namasentimitha angu-8 ezine-doping ye-N-type/P-type engenziwa ngokwezifiso, ifinyelela amazinga okumelana angu-0.01-0.1 Ω·cm kanye nobuningi be-dislocation ngaphansi kwama-500 cm⁻², okwenza zibe zilungele ukukhiqiza ama-MOSFET, ama-Schottky Barrier Diodes (ama-SBD), kanye nama-IGBT. Inqubo yethu yokukhiqiza ehlanganiswe ngokuqondile ihlanganisa ukukhula kwekristalu, ukusika ama-wafer, ukupholisha, kanye nokuhlola, ngomthamo wokukhiqiza wanyanga zonke odlula ama-wafer angu-5,000 ukuze kuhlangatshezwane nezidingo ezahlukahlukene zezikhungo zocwaningo, abakhiqizi be-semiconductor, kanye nezinkampani zamandla avuselelekayo.

Ngaphezu kwalokho, sinikeza izixazululo ezenziwe ngokwezifiso, okuhlanganisa:

Ukwenza ngokwezifiso ukuma kwekristalu (4H-SiC, 6H-SiC)

Ukwelashwa kwe-doping okukhethekile (i-aluminium, i-nitrogen, i-boron, njll.)

Ukupholisha okubushelelezi kakhulu (Ra < 0.5 nm)

I-XKH isekela ukucubungula okusekelwe kumasampula, ukubonisana ngobuchwepheshe, kanye nokwenza ama-prototyping amancane ukuze kulethwe izixazululo ze-substrate ze-SiC ezilungiselelwe kahle.

Amapharamitha obuchwepheshe

I-silicon carbide seed wafer
Uhlobo lwe-Polytype	4H
Iphutha lokuma kwendawo	4°ukuya<11-20>±0.5º
Ukumelana	ukwenza ngokwezifiso
Ububanzi	205±0.5mm
Ubukhulu	600±50μm
Ubulukhuni	I-CMP,Ra≤0.2nm
Ubuningi be-Micropipe	≤1 ngayinye/cm2
Ukuklwebheka	≤5, Ubude obuphelele ≤2 * Ububanzi
Ama-edge chips/indents	Akukho
Ukumaka nge-laser yangaphambili	Akukho
Ukuklwebheka	≤2, Ubude obuphelele ≤ Ububanzi
Ama-edge chips/indents	Akukho
Izindawo ze-Polytype	Akukho
Ukumaka nge-laser yangemuva	1mm (kusukela onqenqemeni oluphezulu)
Umphetho	I-Chamfer
Ukupakisha	Ikhasethi ye-multi-wafer

Izingxenyana Zembewu ye-SiC - Izici Eziyinhloko

1. Izakhiwo Ezimangalisayo Ezingavamile

· Ukushisa okuphezulu (~490 W/m·K), kudlula kakhulu i-silicon (Si) ne-gallium arsenide (GaAs), okwenza kube kuhle kakhulu ekupholiseni idivayisi enamandla amakhulu.

· Amandla ensimu yokuqhekeka (~3 MV/cm), okuvumela ukusebenza okuzinzile ngaphansi kwezimo ze-voltage ephezulu, okubalulekile kuma-inverter e-EV namamojula kagesi ezimboni.

· Igebe elibanzi (3.2 eV), kunciphisa ukuvuza kwamanzi emazingeni okushisa aphezulu kanye nokuthuthukisa ukuthembeka kwedivayisi.

2. Ikhwalithi Ephakeme Yekristalu

· Ubuchwepheshe bokukhula kwe-PVT + HTCVD hybrid bunciphisa amaphutha e-micropipe, bugcina ubuningi be-dislocation bungaphansi kuka-500 cm⁻².

· Umnsalo/i-warp ye-Wafer < 10 μm kanye nobulukhuni bomphezulu i-Ra < 0.5 nm, okuqinisekisa ukuhambisana ne-lithography enembile kakhulu kanye nezinqubo zokubeka ifilimu encane.

3. Izinketho Ezihlukahlukene Zokusebenzisa Izidakamizwa

·Uhlobo lwe-N (olune-nitrogen): Ukumelana okuphansi (0.01-0.02 Ω·cm), okwenzelwe amadivayisi e-RF asebenza ngesivinini esiphezulu.

· Uhlobo lwe-P (olufakwe i-aluminium): Lulungele ama-MOSFET anamandla nama-IGBT, okuthuthukisa ukuhamba kwenethiwekhi.

· I-SiC evikela kancane (efakwe i-Vanadium): Ukumelana > 10⁵ Ω·cm, eyenzelwe amamojula angaphambili e-5G RF.

4. Ukuzinza Kwemvelo

· Ukumelana nokushisa okuphezulu (>1600°C) kanye nokuqina kwemisebe, okufanelekela izindiza, imishini yenuzi, kanye nezinye izindawo ezimbi kakhulu.

Izingxenyana Zembewu ye-SiC - Izicelo Eziyinhloko

1. Amandla kagesi

· Izimoto Zikagesi (ama-EV): Zisetshenziswa kumashaja asebhodini (ama-OBC) kanye nama-inverter ukuthuthukisa ukusebenza kahle nokunciphisa izidingo zokuphathwa kokushisa.

· Izinhlelo Zamandla Ezimboni: Zithuthukisa ama-inverter e-photovoltaic kanye nama-grid ahlakaniphile, zifinyelela ukusebenza kahle kokuguqulwa kwamandla okungaphezulu kuka-99%.

2. Amadivayisi e-RF

· Iziteshi Zesisekelo ze-5G: Izingxenye ze-SiC ezivikela kancane zivumela ama-amplifier wamandla e-GaN-on-SiC RF, asekela ukudluliswa kwesignali enamandla aphezulu.

Ukuxhumana Kwesathelayithi: Izici zokulahlekelwa okuncane zenza ifaneleke kumadivayisi ane-millimeter-wave.

3. Isitoreji Samandla Avuselelekayo kanye Namandla

· Amandla Elanga: Ama-SiC MOSFET athuthukisa ukusebenza kahle kokuguqulwa kwe-DC-AC ngenkathi enciphisa izindleko zesistimu.

· Izinhlelo Zokugcina Amandla (ESS): Ithuthukisa abaguquli bezinhlangothi ezimbili futhi yandisa isikhathi sokuphila kwebhethri.

4. Ukuvikela kanye Nezindiza

· Izinhlelo zeRadar: Amadivayisi e-SiC anamandla aphezulu asetshenziswa kuma-radar e-AESA (Active Electronically Scanned Array).

· Ukuphathwa Kwamandla Ezindiza Zasemkhathini: Izisekelo ze-SiC ezingamelani nemisebe zibalulekile emisebenzini yasemkhathini ojulile.

5. Ucwaningo kanye nobuchwepheshe obusafufusa

· I-Quantum Computing: I-SiC ehlanzekile kakhulu ivumela ucwaningo lwe-spin qubit.

· Izinzwa Zokushisa Okuphezulu: Zisetshenziswa ekuhloleni uwoyela kanye nokuqapha i-reactor yenuzi.

Izingxenyana Zembewu ze-SiC - Izinsizakalo ze-XKH

1. Izinzuzo Zochungechunge Lokunikezela

· Ukukhiqiza okuhlanganiswe ngokuqondile: Ukulawula okugcwele kusukela ku-SiC powder ehlanzekile kakhulu kuya kuma-wafer aqediwe, okuqinisekisa izikhathi zokuhola zamasonto angu-4-6 emikhiqizweni ejwayelekile.

· Ukuncintisana ngezindleko: Umnotho wezinga uvumela amanani aphansi ngo-15-20% kunabancintisana nabo, ngokusekelwa kwezivumelwano zesikhathi eside (ii-LTA).

2. Izinsizakalo Zokwenza Ngokwezifiso

· Ukuqondiswa kwekristalu: 4H-SiC (ejwayelekile) noma 6H-SiC (izinhlelo zokusebenza ezikhethekile).

· Ukulungiswa kwe-doping: Izakhiwo zohlobo lwe-N/uhlobo lwe-P/uhlobo oluyi-semi-insulating ezilungiselelwe wena.

· Ukupholisha okuthuthukisiwe: Ukupholisha kwe-CMP kanye nokwelashwa kobuso obulungele i-epi (Ra < 0.3 nm).

3. Usekelo Lobuchwepheshe

· Ukuhlolwa kwesampula yamahhala: Kufaka phakathi imibiko yokulinganisa umphumela we-XRD, AFM, kanye ne-Hall.

· Usizo lokulingisa idivayisi: Lusekela ukukhula kwe-epitaxial kanye nokwenza ngcono ukwakheka kwedivayisi.

4. Impendulo Esheshayo

· Ukulinganisa okuphansi: I-oda elincane lama-wafer ayi-10, alethwa zingakapheli amasonto ama-3.

· Ukuphathwa kwempahla emhlabeni wonke: Ubambiswano ne-DHL kanye ne-FedEx ukuze kuthunyelwe indlu ngendlu.

5. Ukuqinisekiswa Kwekhwalithi

· Ukuhlolwa kwenqubo ephelele: Kuhlanganisa i-X-ray topography (XRT) kanye nokuhlaziywa kobuningi beziphambeko.

· Izitifiketi zomhlaba wonke: Zihambisana nezindinganiso ze-IATF 16949 (zezinga lezimoto) kanye ne-AEC-Q101.

Isiphetho

Izingxenye zembewu ze-XKH ze-SiC zihamba phambili ngekhwalithi yekristalu, ukuzinza kochungechunge lokuphakelwa, kanye nokuguquguquka kokwenza ngokwezifiso, zikhonza ama-elekthronikhi kagesi, ukuxhumana kwe-5G, amandla avuselelekayo, kanye nobuchwepheshe bokuvikela. Siyaqhubeka nokuthuthukisa ubuchwepheshe bokukhiqiza ngobuningi be-SiC obuyi-intshi ezingu-8 ukuze siqhubekisele phambili imboni ye-semiconductor yesizukulwane sesithathu.

Okwedlule: Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4 intshi esingu-6 intshi se-ICP

Olandelayo: I-SiC Seed Crystal Substrates Eyenziwe Ngokwezifiso Dia 205/203/208 4H-N Type for Optical Communications