I-AlN-on-NPSS Wafer: Isendlalelo se-aluminium nitride esisebenza kahle kakhulu kwi-substrate ye-sapphire engapholishiwe yezinhlelo zokusebenza ezisezingeni eliphezulu lokushisa, amandla aphezulu, kanye ne-RF

Incazelo emfushane:

I-wafer ye-AlN-on-NPSS ihlanganisa ungqimba lwe-aluminium nitride (AlN) olusebenza kahle kakhulu ne-substrate ye-sapphire engapholishiwe (NPSS) ukuze inikeze ikhambi elifanele izinhlelo zokusebenza ezisebenza ngokushisa okuphezulu, amandla aphezulu, kanye ne-radio-frequency (RF). Inhlanganisela eyingqayizivele ye-AlN's thermal conductivity kanye nezakhiwo zikagesi, kanye namandla amahle kakhulu e-substrate, yenza le wafer ibe yisinqumo esithandwayo sezinhlelo zokusebenza ezidinga amandla njenge-electronics yamandla, amadivayisi asebenza ngokushisa okuphezulu, kanye nezingxenye ze-optical. Ngokushabalalisa ukushisa okuhle kakhulu, ukulahlekelwa okuphansi, kanye nokuhambisana nezimo zokushisa okuphezulu, le wafer ivumela ukuthuthukiswa kwamadivayisi esizukulwane esilandelayo asebenza kahle kakhulu.


Izici

Izici

Isendlalelo se-AlN Esisebenza Kakhulu: I-Aluminium Nitride (AlN) yaziwa nge-ukuhanjiswa okuphezulu kokushisa(~200 W/m·K),igebe elibanzi, futhii-voltage ephezulu yokuqhekeka, okwenza kube yinto efanelekile kakhuluamandla aphezulu, imvamisa ephezulu, futhiizinga lokushisa eliphezuluizinhlelo zokusebenza.

I-Substrate ye-Sapphire Engapholishiwe (NPSS): I-sapphire engacwebezelisiwe inikezakuqiza kahle, uqine ngokwemishiniisisekelo, okuqinisekisa isisekelo esiqinile sokukhula kwe-epitaxial ngaphandle kobunzima bokupholisha ubuso. Izakhiwo ezinhle kakhulu ze-NPSS zenza iqine ezindaweni ezinzima.

Ukuqina Okuphezulu Kokushisa: I-AlN-on-NPSS wafer ingamelana nokushintshashintsha kwezinga lokushisa okukhulu, okwenza ifaneleke ukusetshenziswa kuugesi kagesi, izinhlelo zezimoto, Ama-LED, futhiizinhlelo zokusebenza ezibonakalayoezidinga ukusebenza okuzinzile ezimweni zokushisa okuphezulu.

Ukufakwa Kokushisa Kukagesi: I-AlN inezakhiwo ezinhle kakhulu zokuvimbela ugesi, okwenza ifaneleke kakhulu ekusetshenzisweni laphoukuhlukaniswa kukagesikubalulekile, okuhlanganisaAmadivayisi e-RFfuthiizinto zikagesi ze-microwave.

Ukushabalalisa Ukushisa Okuphezulu: Njengoba i-thermal conductivity ephezulu, ungqimba lwe-AlN luqinisekisa ukushabalaliswa kokushisa okuphumelelayo, okubalulekile ekugcineni ukusebenza kanye nobude besikhathi samadivayisi asebenza ngaphansi kwamandla aphezulu kanye nemvamisa.

Amapharamitha Obuchwepheshe

Ipharamitha

Imininingwane

Ububanzi be-Wafer Amasentimitha angu-2, amasentimitha angu-4 (osayizi abangokwezifiso bayatholakala)
Uhlobo lwe-substrate I-Substrate ye-Sapphire Engapholishiwe (NPSS)
Ubukhulu Besendlalelo se-AlN 2µm kuya ku-10µm (kungenziwa ngezifiso)
Ubukhulu be-substrate 430µm ± 25µm (kwama-intshi amabili), 500µm ± 25µm (kwama-intshi amane)
Ukuqhuba Okushisayo 200 W/m·K
Ukumelana Nogesi Ukushisa okuphezulu, okufanele ukusetshenziswa kwe-RF
Ubulukhuni Bomphezulu I-Ra ≤ 0.5µm (yesendlalelo se-AlN)
Ubumsulwa Bezinto Ezibonakalayo I-AlN ehlanzekile kakhulu (99.9%)
Umbala Okumhlophe/Okungamhlophe (ungqimba lwe-AlN olune-substrate ye-NPSS enombala okhanyayo)
I-Wafer Warp < 30µm (okuvamile)
Uhlobo Lokusebenzisa Izidakamizwa Okungafakwanga idosi (kungenziwa ngezifiso)

Izicelo

II-AlN-on-NPSS waferyenzelwe izinhlobo eziningi zezicelo zokusebenza okuphezulu emikhakheni eminingana:

Ama-elekthronikhi Anamandla Aphezulu: Ukushisa okuphezulu kanye nezakhiwo zokuvikela ugesi zesendlalelo se-AlN kwenza kube yinto efanelekile kakhuluama-transistors kagesi, izinto zokulungisa, futhiama-IC wamandlaesetshenziswa kuizimoto, izimboni, futhiamandla avuselelekayoizinhlelo.

Izingxenye ze-Radio-Frequency (RF): Izakhiwo ezinhle kakhulu zokuvimbela ugesi ze-AlN, kanye nokulahlekelwa kwayo okuphansi, kuvumela ukukhiqizwa kweAma-transistors e-RF, Ama-HEMT (Ama-Transistors Ahamba Nge-Electron Ephezulu), kanye nokunyeizingxenye ze-microwaveezisebenza kahle kumaza aphezulu kanye namazinga wamandla.

Amadivayisi OpticalAma-wafer e-AlN-on-NPSS asetshenziswa ku-ama-diode e-laser, Ama-LED, futhiama-photodetectors, laphoukuhanjiswa okuphezulu kokushisafuthiukuqina komshinizibalulekile ekugcineni ukusebenza isikhathi eside.

Izinzwa Zokushisa Okuphezulu: Ikhono le-wafer lokubekezelela ukushisa okukhulu lenza ifanelekeizinzwa zokushisafuthiukuqapha imveloezimbonini ezifanaizindiza, izimoto, futhiuwoyela negesi.

Ukupakishwa kwe-semiconductor: Kusetshenziswa ku izisabalalisi zokushisafuthiizendlalelo zokuphathwa kokushisaezinhlelweni zokupakisha, okuqinisekisa ukuthembeka nokusebenza kahle kwama-semiconductor.

Imibuzo Nezimpendulo

U: Iyini inzuzo eyinhloko yama-wafer e-AlN-on-NPSS kunezinto zendabuko ezifana ne-silicon?

A: Inzuzo enkulu yi-AlN'sukuhanjiswa okuphezulu kokushisa, okuvumela ukuthi ikhiphe ukushisa ngempumelelo, okwenza kube kuhle kakhuluamandla aphezulufuthiizinhlelo zokusebenza ezivame kakhululapho ukuphathwa kokushisa kubaluleke kakhulu. Ngaphezu kwalokho, i-AlN ine-igebe elibanzifuthi kuhle kakhuluukuvikela ngogesi, okwenza kube ngcono ukusetshenziswa kuRFfuthiamadivayisi e-microwaveuma kuqhathaniswa ne-silicon yendabuko.

Q: Ingabe ungqimba lwe-AlN kuma-NPSS wafer lungenziwa ngokwezifiso?

A: Yebo, ungqimba lwe-AlN lungenziwa ngokwezifiso ngokuya ngobukhulu (kusukela ku-2µm kuya ku-10µm noma ngaphezulu) ukuze kuhlangatshezwane nezidingo ezithile zesicelo sakho. Siphinde sinikeze ngokwezifiso ngokuya ngohlobo lwe-doping (uhlobo lwe-N noma uhlobo lwe-P) kanye nezendlalelo ezengeziwe zemisebenzi ekhethekile.

U: Yisiphi isicelo esijwayelekile salesi sikhwama embonini yezimoto?

A: Embonini yezimoto, ama-wafer e-AlN-on-NPSS avame ukusetshenziswa ku-ugesi kagesi, Izinhlelo zokukhanyisa ze-LED, futhiizinzwa zokushisaBanikeza ukuphathwa kokushisa okuphezulu kanye nokufakwa kokushisa kukagesi, okubalulekile ezinhlelweni ezisebenza kahle kakhulu ezisebenza ngaphansi kwezimo zokushisa ezihlukahlukayo.

Umdwebo Oningiliziwe

I-AlN ku-NPSS01
I-AlN ku-NPSS03
I-AlN ku-NPSS04
I-AlN ku-NPSS07

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