I-AlN-on-NPSS Wafer: Isendlalelo Se-Aluminium Nitride Esebenza Kakhulu Ku-Sapphire Substrate Engapholishiwe Yezinga Lokushisa Eliphezulu, Amandla Aphezulu, kanye Nezicelo ze-RF

I-AlN-on-NPSS Wafer: Isendlalelo Se-Aluminium Nitride Esebenza Kaphezulu Ku-Sapphire Substrate Engapholishiwe Yezinga Lokushisa Eliphezulu, Amandla Aphezulu, kanye Nezicelo ze-RF Isithombe Esifakiwe

Incazelo emfushane:

I-wafer ye-AlN-on-NPSS ihlanganisa ungqimba lwe-aluminium nitride (AlN) olusebenza kahle kakhulu ne-non-polished sapphire substrate (NPSS) ukuze inikeze isisombululo esikahle sezinhlelo zokusebenza ezishisa kakhulu, ezinamandla amakhulu, kanye ne-radio-frequency (RF). Inhlanganisela eyingqayizivele ye-AlN yokuguquguquka kwe-thermal eyingqayizivele kanye nezakhiwo zikagesi, kanye namandla angcono kakhulu okusebenza e-substrate, kwenza lesi silucwecwana sibe yinketho ekhethwayo yezinhlelo zokusebenza ezinzima ezifana nogesi wamandla, amadivaysi amafrikhwensi aphezulu, nezinto ezibonakalayo. Ngokukhipha ukushisa okuhle kakhulu, ukulahlekelwa okuphansi, nokuhambisana nezindawo ezinethempelesha eliphezulu, lesi silucwecwana sivumela ukuthuthukiswa kwamadivayisi esizukulwane esilandelayo ngokusebenza okuphakeme.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici

Ukusebenza okuphezulu kwe-AlN Layer: I-Aluminium Nitride (AlN) yaziwa ngayohigh conductivity ezishisayo(~200 W/m·K),i-bandgap ebanzi, futhihigh voltage breakdown, okwenza kube impahla ekahleamandla aphezulu, high-frequency, futhiizinga lokushisa eliphezuluizicelo.

I-Non-Polished Sapphire Substrate (NPSS): Isafire engapholishiwe inikeza akuqiza kahle, ziqine ngomshiniisisekelo, ukuqinisekisa isisekelo esizinzile sokukhula kwe-epitaxial ngaphandle kobunzima bokupholisha ubuso. Izakhiwo ezinhle kakhulu zemishini ye-NPSS ziyenza iqine ezindaweni eziyinselele.

Ukuzinza Okushisayo Okuphezulu: Iwafa ye-AlN-on-NPSS ingamelana nokushintshashintsha kwezinga lokushisa okwedlulele, ikwenze ilungele ukusetshenziswaamandla kagesi, izinhlelo zezimoto, Ama-LED, futhiizinhlelo zokusebenza ze-opticalezidinga ukusebenza okuzinzile ezimweni zokushisa okuphezulu.

I-Insulation kagesi: I-AlN inezindawo ezinhle kakhulu zokuvikela ugesi, okwenza ilungele izinhlelo zokusebenza laphoukuhlukaniswa kukagesikubalulekile, kuhlanganisaImishini ye-RFfuthii-microwave electronics.

I-Superior Heat Dissipation: Ngokusebenza okuphezulu kwe-thermal, isendlalelo se-AlN siqinisekisa ukuchithwa kokushisa okuphumelelayo, okubalulekile ekugcineni ukusebenza nokuhlala isikhathi eside kwamadivayisi asebenza ngaphansi kwamandla aphezulu kanye nemvamisa.

Imingcele Yezobuchwepheshe

Ipharamitha	Ukucaciswa
I-Wafer Diameter	2-intshi, 4-intshi (osayizi ngokwezifiso bayatholakala)
Uhlobo lwe-Substrate	I-Non-Polished Sapphire Substrate (NPSS)
Ukuqina Kwengqimba ye-AlN	2µm ukuya ku-10µm (iyenzeka ngokwezifiso)
Ubukhulu be-substrate	430µm ± 25µm (ku-2-intshi), 500µm ± 25µm (ku-4-intshi)
I-Thermal Conductivity	200 W/m·K
Ukungazweli Kagesi	Ukufakwa okuphezulu, kulungele izinhlelo zokusebenza ze-RF
Ukuqina Kobuso	I-Ra ≤ 0.5µm (yesendlalelo se-AlN)
Ubumsulwa Bezinto ezibonakalayo	Ukuhlanzeka okuphezulu kwe-AlN (99.9%)
Umbala	Okumhlophe/Kucishiwe-Mhlophe (Isendlalelo se-AlN esinombala okhanyayo we-NPSS substrate)
I-Wafer Warp	< 30µm (okujwayelekile)
Uhlobo lweDoping	I-Un-doped (ingenziwa ngezifiso)

Izinhlelo zokusebenza

IIwafa ye-AlN-on-NPSSyakhelwe izinhlobonhlobo zezinhlelo zokusebenza ezisebenza kahle kuzo zonke izimboni eziningana:

I-High-Power Electronics: I-AlN's high conductivity thermal conductivity and insulating properties iyenza ibe into efanelekileamandla transistors, abalungisayo, futhiamandla ICsesetshenziswa kuezezimoto, izimboni, futhiamandla avuselelekayoizinhlelo.

Izingxenye Zomsakazo-Frequency (RF).: Izakhiwo ezinhle kakhulu zokuvikela ugesi ze-AlN, ezihambisana nokulahlekelwa kwayo okuphansi, zinika amandla ukukhiqizwa kweRF transistors, Ama-HEMTs (Ama-High-Electron-Mobility Transistors), nokunyeizingxenye ze-microwaveezisebenza kahle kumafrikhwensi aphezulu kanye namazinga wamandla.

Amadivayisi okubona: Amawafa e-AlN-on-NPSS asetshenziswa kuama-laser diodes, Ama-LED, futhiama-photodetectors, laphohigh conductivity ezishisayofuthiukuqina komshinizibalulekile ekugcineni ukusebenza isikhathi eside sokuphila.

Izinzwa Zokushisa Okuphezulu: Ikhono le-wafer ukumelana nokushisa okukhulu liyenza ifanelekeizinzwa lokushisafuthiukuqapha imveloezimbonini ezifanai-aerospace, ezezimoto, futhiuwoyela negesi.

I-Semiconductor Packaging: Isetshenziswa ku abasakaza ukushisafuthiizingqimba zokuphatha ezishisayoezinhlelweni zokupakisha, ukuqinisekisa ukwethembeka nokusebenza kahle kwama-semiconductors.

Q&A

Q: Iyiphi inzuzo enkulu yama-wafers e-AlN-on-NPSS ngaphezu kwezinto zendabuko ezifana ne-silicon?

A: Inzuzo enkulu i-AlN'shigh conductivity ezishisayo, okuvumela ukuthi uhlakaze kahle ukushisa, okwenza kube kuhleamandla aphezulufuthiizicelo high-frequencylapho ukuphathwa kokushisa kubalulekile. Ukwengeza, i-AlN ine-i-bandgap ebanzifuthi kuhle kakhuluukufakwa kukagesi, okwenza kube ngcono ukusetshenziswa kuRFfuthiimishini ye-microwaveuma kuqhathaniswa ne-silicon yendabuko.

Q: Ingabe isendlalelo se-AlN kuma-wafers e-NPSS singenziwa ngezifiso?

A: Yebo, isendlalelo se-AlN singenziwa ngendlela oyifisayo ngokuya ngogqinsi (kusuka ku-2µm kuye ku-10µm noma ngaphezulu) ukuze kuhlangatshezwane nezidingo ezithile zohlelo lwakho lokusebenza. Siphinde sinikeze ukwenza ngokwezifiso ngokohlobo lwe-doping (uhlobo lwe-N noma uhlobo lwe-P) kanye nezendlalelo ezengeziwe zemisebenzi ekhethekile.

Q: Yiluphi uhlelo lokusebenza olujwayelekile lwalesi siluphu embonini yezimoto?

A: Embonini yezimoto, ama-wafer e-AlN-on-NPSS avame ukusetshenziswa kuamandla kagesi, Izinhlelo zokukhanyisa ze-LED, futhiizinzwa lokushisa. Bahlinzeka ngokuphathwa okushisayo okuphezulu kanye nokufakwa kukagesi, okubalulekile ezinhlelweni ezisebenza kahle kakhulu ezisebenza ngaphansi kwezimo zokushisa ezihlukene.