I-AlN ku-FSS 2inch 4inch NPSS/FSS AlN ithempulethi yendawo ye-semiconductor

Incazelo emfushane:

Amawafa e-AlN ku-FSS (Flexible Substrate) anikezela ngenhlanganisela eyingqayizivele ye-thermal conductivity ehlukile, amandla emishini, kanye nezakhiwo zokuvala ugesi ze-Aluminium Nitride (AlN), ezibhangqwe nokuguquguquka kwe-substrate esebenza kahle kakhulu. Lawa mawafa angama-intshi angu-2 namayintshi angu-4 aklanyelwe ngokukhethekile izinhlelo zokusebenza ze-semiconductor ezithuthukisiwe, ikakhulukazi lapho ukuphathwa okushisayo nokuguquguquka kwedivayisi kubalulekile. Ngenketho ye-NPSS (Non-Polished Substrate) kanye ne-FSS (Flexible Substrate) njengesisekelo, lezi zifanekiso ze-AlN zilungele izinhlelo zokusebenza ezikuma-electronics amandla, amadivayisi e-RF, namasistimu kagesi aguquguqukayo, lapho ukuguquguquka okuphezulu kwe-thermal nokuhlanganiswa okuvumelana nezimo kuwukhiye wokuthuthukisa ukusebenza nokuthembeka kwedivayisi.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

Ukwakhiwa Kwezinto:
I-Aluminium Nitride (AlN) – Isendlalelo se-ceramic esimhlophe, esisebenza kahle kakhulu esinikeza ukuguquguquka kwe-thermal okuhle kakhulu (imvamisa engu-200-300 W/m·K), ukufakwa kahle kukagesi, namandla aphezulu emishini.
I-Flexible Substrate (FSS) – Amafilimu e-polymeric avumelanayo (njenge-Polyimide, i-PET, njll.) anikeza ukuqina nokugobeka ngaphandle kokuphazamisa ukusebenza kongqimba lwe-AlN.

Amasayizi we-wafer ayatholakala:
2-intshi (50.8mm)
4-intshi (100mm)

Ubukhulu:
Isendlalelo se-AlN: 100-2000nm
Ubukhulu be-Substrate ye-FSS: 50µm-500µm (ingenziwa ngendlela oyifisayo ngokusekelwe kuzimfuneko)

Izinketho Zokuqeda Ubuso:
I-NPSS (I-Non-Polished Substrate) - Indawo engaphansi engapholishiwe, elungele izinhlelo zokusebenza ezithile ezidinga amaphrofayili angaphezulu okuqinile ukuze kunamathele kangcono noma kuhlanganiswe.
I-FSS (I-Flexible Substrate) – Ifilimu eguquguqukayo epholishiwe noma engapholishiwe, enenketho yezindawo ezibushelelezi noma ezithungwe, kuye ngezidingo ezithile zohlelo lokusebenza.

Izakhiwo zikagesi:
I-Insulating - Izakhiwo zikagesi ze-AlN ziyenza ilungele ukusetshenziswa kwe-semiconductor yamandla aphezulu kanye namandla.
I-Dielectric Constant: ~ 9.5
I-Thermal Conductivity: 200-300 W/m·K (kuya ngebanga elithile le-AlN nogqinsi)

Izici zikaMechanical:
Ukuvumelana nezimo: I-AlN ifakwe ku-flexible substrate (FSS) evumela ukugoba nokuvumelana nezimo.
Ukuqina Kobuso: I-AlN iqinile kakhulu futhi imelana nokulimala ngokomzimba ngaphansi kwezimo ezivamile zokusebenza.

Izinhlelo zokusebenza

Amadivayisi Anamandla Aphezulu: Ilungele ama-electronics amandla adinga ukuchithwa kwe-thermal okuphezulu, njengeziguquli zamandla, ama-amplifiers e-RF, namamojula we-LED wamandla aphezulu.

Izingxenye ze-RF neMicrowave: Ifanele izingxenye ezifana nezinti, izihlungi, nama-resonators lapho kokubili ukuhanjiswa kwe-thermal kanye nokuguquguquka kwemishini kuyadingeka.

I-Flexible Electronics: Ilungele izinhlelo zokusebenza lapho amadivayisi adinga ukuhambisana nezindawo ezingahleliwe noma adinga idizayini engasindi, eguquguqukayo (isb., okugqokekayo, izinzwa eziguquguqukayo).

I-Semiconductor Packaging: Isetshenziswa njenge-substrate ekufakweni kwe-semiconductor, enikeza ukuchithwa okushisayo ezinhlelweni ezikhiqiza ukushisa okuphezulu.

Ama-LED kanye ne-Optoelectronics: Okwamadivaysi adinga ukusebenza kwezinga lokushisa eliphezulu nokulahla ukushisa okuqinile.

Ithebula lepharamitha

Impahla

Inani noma Ububanzi

Usayizi we-Wafer 2-intshi (50.8mm), 4-intshi (100mm)
Ukuqina Kwengqimba ye-AlN 100nm - 2000nm
Ubukhulu be-Substrate ye-FSS 50µm – 500µm (kungenziwa ngokwezifiso)
I-Thermal Conductivity 200 – 300 W/m·K
Izakhiwo zikagesi I-Insulating (I-Dielectric Constant: ~9.5)
I-Surface Qeda Ipholishiwe noma Ayipholishiwe
Uhlobo lwe-Substrate I-NPSS (I-Non-Polished Substrate), i-FSS (I-Flexible Substrate)
Ukuguquguquka Kwemishini Ukuvumelana nezimo okuphezulu, ilungele izinto zikagesi eziguquguqukayo
Umbala Okumhlophe kuya kokumhlophe (kuye ngokuthi i-substrate)

Izinhlelo zokusebenza

●Amandla kagesi:Inhlanganisela ye-thermal conductivity ephezulu kanye nokuguquguquka kwenza lawa mawafa afaneleke kumadivayisi kagesi njengeziguquli zamandla, ama-transistors, nezilawuli ze-voltage ezidinga ukuchithwa kokushisa okusebenzayo.
● Amadivayisi e-RF/Microwave:Ngenxa yezakhiwo ezishisayo ze-AlN eziphezulu kanye nokungabizi kahle kukagesi, lawa mawafa asetshenziswa ezingxenyeni ze-RF njengama-amplifiers, ama-oscillator, nama-antenna.
● I-Flexible Electronics:Ukuguquguquka kwesendlalelo se-FSS kuhlanganiswe nokuphathwa kwe-thermal okuhle kakhulu kwe-AlN kuyenza ibe inketho ekahle kuma-elekthronikhi nezinzwa ezigqokekayo.
● Ukupakishwa kweSemiconductor:Isetshenziselwa ukupakishwa kwe-semiconductor yokusebenza okuphezulu lapho ukuchithwa okushisayo okusebenzayo nokuthembeka kubalulekile.
●Izinhlelo zokusebenza ze-LED ne-Optoelectronic:I-Aluminium Nitride iyinto enhle kakhulu yokupakishwa kwe-LED namanye amadivaysi e-optoelectronic adinga ukumelana nokushisa okuphezulu.

I-Q&A (Imibuzo Evame Ukubuzwa)

Q1: Yiziphi izinzuzo zokusebenzisa i-AlN kumawafa e-FSS?

A1: I-AlN kumawafa e-FSS ahlanganisa ukuguquguquka okuphezulu kwe-thermal kanye nezakhiwo zokufakwa kukagesi ze-AlN nokuguquguquka kwemishini kwe-polymer substrate. Lokhu kuvumela ukulahlwa kokushisa okuthuthukisiwe kumasistimu e-elekthronikhi aguquguqukayo kuyilapho kugcinwa ubuqotho bedivayisi ngaphansi kwezimo zokugoba nokunwebeka.

Q2: Yimaphi amasayizi atholakalayo ku-AlN kuma-wafers e-FSS?

A2: Sinikeza2-intshifuthi4-intshiamasayizi ama-wafer. Osayizi bangokwezifiso kungaxoxwa ngakho uma ucela ukuhlangabezana nezidingo zakho zohlelo lokusebenza.

Q3: Ngingakwazi ukwenza ngokwezifiso ukujiya kwesendlalelo se-AlN?

A3: Yebo, iUgqinsi lwesendlalelo se-AlNkungenziwa ngezifiso, ngobubanzi obujwayelekile ukusuka100nm kuya ku-2000nmkuye ngezidingo zakho zesicelo.

Umdwebo onemininingwane

I-AlN ku-FSS01
I-AlN ku-FSS02
I-AlN ku-FSS03
I-AlN ku-FSS06 - 副本

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