I-wafer yebanga lokukhiqiza le-SiC engu-8inch 4H-N SiC substrate
Ithebula elilandelayo libonisa imininingwane yama-wafer ethu e-SiC angu-8inch:
| Izinhlobo ze-SiC DSP zohlobo lwe-N ezingu-8 intshi | |||||
| Inombolo | Into | Iyunithi | Ukukhiqizwa | Ucwaningo | Isiwula |
| 1:amapharamitha | |||||
| 1.1 | uhlobo lwe-polytype | -- | 4H | 4H | 4H |
| 1.2 | ukuqondiswa kobuso | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2: Ipharamitha kagesi | |||||
| 2.1 | i-dopant | -- | i-nitrogen yohlobo lwe-n | i-nitrogen yohlobo lwe-n | i-nitrogen yohlobo lwe-n |
| 2.2 | ukumelana | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3: Ipharamitha yomshini | |||||
| 3.1 | ububanzi | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | ukujiya | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Ukuqondiswa kwe-notch | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | Ukujula kwe-Notch | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | I-LTV | μm | ≤5 (10mm*10mm) | ≤5 (10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | I-TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Umnsalo | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | I-Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | I-AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4: Ukwakheka | |||||
| 4.1 | ubuningi bepayipi elincane | ea/cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | okuqukethwe kwensimbi | ama-athomu/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | I-TSD | ea/cm2 | ≤500 | ≤1000 | NA |
| 4.4 | I-BPD | ea/cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | I-TED | ea/cm2 | ≤7000 | ≤10000 | NA |
| 5. Ikhwalithi yangaphambili | |||||
| 5.1 | ngaphambili | -- | Si | Si | Si |
| 5.2 | ukuqeda ubuso | -- | I-CMP ye-Si-face | I-CMP ye-Si-face | I-CMP ye-Si-face |
| 5.3 | inhlayiya | i-ea/i-wafer | ≤100 (usayizi ≥0.3μm) | NA | NA |
| 5.4 | ukuklwebheka | i-ea/i-wafer | ≤5, Ubude obuphelele ≤200mm | NA | NA |
| 5.5 | Umphetho ama-chips/i-indents/imifantu/amabala/ukungcola | -- | Akukho | Akukho | NA |
| 5.6 | Izindawo ze-Polytype | -- | Akukho | Indawo ≤10% | Indawo ≤30% |
| 5.7 | uphawu olungaphambili | -- | Akukho | Akukho | Akukho |
| 6: Ikhwalithi yangemuva | |||||
| 6.1 | ukuqeda emuva | -- | I-MP yobuso be-C | I-MP yobuso be-C | I-MP yobuso be-C |
| 6.2 | ukuklwebheka | mm | NA | NA | NA |
| 6.3 | Umkhawulo wamaphutha angemuva ama-chips/ama-indent | -- | Akukho | Akukho | NA |
| 6.4 | Ukugoba komhlane | nm | I-Ra≤5 | I-Ra≤5 | I-Ra≤5 |
| 6.5 | Ukumaka ngemuva | -- | I-Notch | I-Notch | I-Notch |
| 7:umphetho | |||||
| 7.1 | umkhawulo | -- | I-Chamfer | I-Chamfer | I-Chamfer |
| 8: Iphakheji | |||||
| 8.1 | ukupakishwa | -- | Ilungele i-Epi nge-vacuum ukupakishwa | Ilungele i-Epi nge-vacuum ukupakishwa | Ilungele i-Epi nge-vacuum ukupakishwa |
| 8.2 | ukupakishwa | -- | I-multi-wafer ukupakishwa kwekhasethi | I-multi-wafer ukupakishwa kwekhasethi | I-multi-wafer ukupakishwa kwekhasethi |
Umdwebo Oningiliziwe
Imikhiqizo Ehlobene
Bhala umlayezo wakho lapha bese uwuthumela kithi