6inch SiC Epitaxiy wafer N/P uhlobo lwamukeleka ngendlela oyifisayo

6inch SiC Epitaxiy wafer N/P uhlobo lwamukela Isithombe esifakiwe ngokwezifiso

Incazelo emfushane:

i-silicon carbide epitaxial wafer engu-4, 6, 8 inch kanye nezinsiza ze-epitaxial Foundry, ukukhiqiza (600V~3300V) amadivayisi kagesi ahlanganisa i-SBD, i-JBS, i-PiN, i-MOSFET, i-JFET, i-BJT, i-GTO, i-IGBT nokunye.

Singahlinzeka ngama-wafers e-SiC epitaxial angu-4-intshi angu-6-intshi angu-6 ukuze kwenziwe amadivayisi kagesi ahlanganisa i-SBD JBS PiN MOSFET JFET BJT GTO & IGBT kusukela ku-600V kuya ku-3300V

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Inqubo yokulungiselela i-silicon carbide epitaxial wafer iyindlela esebenzisa ubuchwepheshe beChemical Vapor Deposition (CVD).Okulandelayo yizimiso zobuchwepheshe ezifanele nezinyathelo zenqubo yokulungiselela:

Isimiso sobuchwepheshe:

I-Chemical Vapor Deposition: Kusetshenziswa igesi yezinto ezingavuthiwe esigabeni segesi, ngaphansi kwezimo ezithile zokusabela, iyabola bese ifakwa ku-substrate ukuze kwakhe ifilimu elincanyana elifunekayo.

Ukusabela kwesigaba segesi: Ngokusebenzisa i-pyrolysis noma ukusabela kokuqhekeka, amagesi ahlukahlukene wezinto ezingavuthiwe esigabeni segesi ashintshwa ngamakhemikhali egumbini lokuphendula.

Izinyathelo zokulungiselela:

Ukwelashwa kwe-substrate: I-substrate ingaphansi kokuhlanzwa kwendawo kanye nokwelashwa kwangaphambili ukuze kuqinisekiswe ikhwalithi kanye nobukristalu be-wafer ye-epitaxial.

Ukulungisa iphutha legumbi lokusabela: lungisa izinga lokushisa, ingcindezi kanye nezinga lokugeleza kwegumbi lokusabela kanye neminye imingcele ukuze uqinisekise ukuzinza nokulawula izimo zokusabela.

Ukunikezwa kwempahla eluhlaza: hlinzeka ngezinto ezingavuthiwe zegesi ezidingekayo ekamelweni lokusabela, ukuxuba nokulawula izinga lokugeleza njengoba kudingeka.

Inqubo yokusabela: Ngokushisisa igumbi lokusabela, i-gaseous feedstock ibhekana nokusabela kwamakhemikhali ekamelweni ukuze kukhiqizwe idiphozi oyifunayo, okungukuthi ifilimu ye-silicon carbide.

Ukupholisa nokuthulula: Ekupheleni kokusabela, izinga lokushisa liyehliswa kancane kancane ukuze liphole futhi liqinise amadiphozithi egunjini lokusabela.

I-Epitaxial wafer annealing and post-processing: i-wafer ye-epitaxial ediphozithiwe iyabanjwa bese icutshungulwa ukuze kuthuthukiswe izici zayo zikagesi nezokubonwayo.

Izinyathelo ezithile nezimo zenqubo yokulungiselela i-silicon carbide epitaxial wafer ingahluka kuye ngemishini ethile kanye nezidingo.Lokhu okungenhla kuwukugeleza kwenqubo evamile kuphela kanye nesimiso, ukusebenza okuqondile kudinga ukulungiswa futhi kulungiselelwe ngokuvumelana nesimo sangempela.