I-wafer ye-SiC Epitaxiy engu-6inch N/P yamukelekile ngokwezifiso

Incazelo emfushane:

ihlinzeka ngezinsizakalo ze-silicon carbide epitaxial wafer kanye ne-epitaxial foundry ezingama-4, 6, 8 intshi, ukukhiqizwa kwamadivayisi kagesi (600V ~ 3300V) kufaka phakathi i-SBD, i-JBS, i-PiN, i-MOSFET, i-JFET, i-BJT, i-GTO, i-IGBT njalo njalo.

Singahlinzeka ngama-wafer e-SiC epitaxial angamasentimitha angu-4 nangu-6 ukuze kwenziwe amadivayisi kagesi afaka phakathi i-SBD JBS PiN MOSFET JFET BJT GTO & IGBT kusukela ku-600V kuya ku-3300V


Izici

Inqubo yokulungiselela i-silicon carbide epitaxial wafer iyindlela esebenzisa ubuchwepheshe be-Chemical Vapor Deposition (CVD). Lokhu okulandelayo yizimiso zobuchwepheshe ezifanele kanye nezinyathelo zenqubo yokulungiselela:

Isimiso sobuchwepheshe:

Ukususwa Komusi Wekhemikhali: Uma kusetshenziswa igesi yezinto ezingavuthiwe esigabeni segesi, ngaphansi kwezimo ezithile zokusabela, iyabola bese ifakwa ku-substrate ukuze kwakhiwe ifilimu elincane elifunekayo.

Ukusabela kwesigaba segesi: Ngokusebenzisa i-pyrolysis noma ukusabela kokuqhekeka, amagesi ahlukahlukene ezinto eziluhlaza esigabeni segesi ashintshwa ngamakhemikhali ekamelweni lokusabela.

Izinyathelo zenqubo yokulungiselela:

Ukwelashwa kwe-substrate: I-substrate ihlanzwa futhi iphathwe ngaphambi kokusetshenziswa ukuqinisekisa ikhwalithi kanye nokucwebezela kwe-epitaxial wafer.

Ukulungisa iphutha legumbi lokusabela: lungisa izinga lokushisa, ingcindezi kanye nesivinini sokugeleza kwegumbi lokusabela kanye nezinye izinhlaka ukuqinisekisa ukuzinza nokulawula izimo zokusabela.

Ukuhlinzekwa kwezinto ezingavuthiwe: hlinzeka ngezinto ezingavuthiwe zegesi ezidingekayo ekamelweni lokusabela, ukuxuba nokulawula izinga lokugeleza njengoba kudingeka.

Inqubo yokusabela: Ngokufudumeza igumbi lokusabela, i-feedstock yegesi idlula ekusabeleni kwamakhemikhali ekamelweni ukuze ikhiqize idiphozithi oyifunayo, okungukuthi ifilimu ye-silicon carbide.

Ukupholisa nokukhipha: Ekupheleni kokusabela, izinga lokushisa liyehliswa kancane kancane ukuze liphole futhi liqinise amadiphozithi ekamelweni lokusabela.

Ukufuthwa kanye nokucutshungulwa kwe-epitaxial wafer: i-epitaxial wafer efakiwe iyafuthwa futhi icutshungulwe ukuze kuthuthukiswe izakhiwo zayo zikagesi nezokukhanya.

Izinyathelo nezimo ezithile zenqubo yokulungiselela i-silicon carbide epitaxial wafer zingahluka kuye ngemishini ethile nezidingo. Lokhu okungenhla kumane kuyindlela ejwayelekile yokugeleza kwenqubo kanye nesimiso, ukusebenza okuthile kudinga ukulungiswa nokulungiswa ngokwesimo sangempela.

Umdwebo Oningiliziwe

I-WechatIMG321
I-WechatIMG320

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