I-GaN-On-Sapphire engu-6 intshi
I-wafer engu-150mm 6inch GaN ku-Silicon/Sapphire/SiC Epi-layer wafer I-wafer ye-Gallium nitride epitaxial
I-wafer ye-sapphire substrate engamasentimitha angu-6 iyinto ye-semiconductor esezingeni eliphezulu equkethe izendlalelo ze-gallium nitride (GaN) ezikhulele ku-sapphire substrate. Le nto inezakhiwo ezinhle kakhulu zokuthutha ngogesi futhi ilungele ukukhiqiza amadivayisi e-semiconductor anamandla aphezulu kanye nama-frequency aphezulu.
Indlela Yokukhiqiza: Inqubo yokukhiqiza ihilela ukukhulisa izingqimba ze-GaN ku-substrate ye-sapphire kusetshenziswa amasu athuthukile njenge-metal-organic chemical vapor deposition (MOCVD) noma i-molecular beam epitaxy (MBE). Inqubo yokubeka yenziwa ngaphansi kwezimo ezilawulwayo ukuqinisekisa ikhwalithi ephezulu yekristalu kanye nefilimu efanayo.
Izinhlelo zokusebenza ze-GaN-On-Sapphire ezingama-intshi angu-6: Ama-chip e-sapphire angama-intshi angu-6 asetshenziswa kabanzi ekuxhumaneni nge-microwave, izinhlelo ze-radar, ubuchwepheshe obungenantambo kanye ne-optoelectronics.
Ezinye izinhlelo zokusebenza ezivamile zifaka phakathi
1. Isikhulisi samandla se-Rf
2. Imboni yokukhanyisa ye-LED
3. Imishini yokuxhumana kwenethiwekhi engenantambo
4. Amadivayisi kagesi endaweni enokushisa okuphezulu
5. Amadivayisi e-Optoelectronic
Imininingwane yomkhiqizo
- Usayizi: Ububanzi be-substrate bungamasentimitha angu-6 (cishe amamilimitha angu-150).
- Ikhwalithi yobuso: Ubuso bupholishwe kahle ukuze bunikeze ikhwalithi yesibuko enhle kakhulu.
- Ubukhulu: Ubukhulu besendlalelo se-GaN bungenziwa ngokwezifiso ngokuya ngezidingo ezithile.
- Ukupakisha: I-substrate igcwele ngokucophelela izinto ezilwa nokungaguquguquki ukuze kuvinjelwe umonakalo ngesikhathi sokuthuthwa.
- Imiphetho Yokubeka: I-substrate inemiphetho ethile yokubeka eyenza kube lula ukuvumelanisa nokusebenza ngesikhathi sokulungiselela idivayisi.
- Amanye amapharamitha: Amapharamitha athile njengokuncipha, ukumelana nokushisa kanye nokuhlushwa kwezidakamizwa angalungiswa ngokuya ngezidingo zamakhasimende.
Ngezakhiwo zazo ezinhle kakhulu zezinto ezibonakalayo kanye nezinhlelo zokusebenza ezahlukahlukene, ama-wafer e-sapphire substrate angamasentimitha ayi-6 ayisinqumo esithembekile sokuthuthukiswa kwamadivayisi e-semiconductor asebenza kahle ezimbonini ezahlukahlukene.
| I-substrate | 6” 1mm <111> uhlobo lwe-p | 6” 1mm <111> uhlobo lwe-p |
| I-Epi ThickAvg | ~5um | ~7um |
| I-Epi ThickUnif | <2% | <2% |
| Umnsalo | +/-45um | +/-45um |
| Ukuqhekeka | <5mm | <5mm |
| I-BV Eqondile | >1000V | >1400V |
| I-HEMT Al% | 25-35% | 25-35% |
| I-HEMT ThickAvg | 20-30nm | 20-30nm |
| I-Insitu SiN Cap | 5-60nm | 5-60nm |
| I-2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Ukuhamba | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| I-Rsh | <330ohm/skwele (<2%) | <330ohm/skwele (<2%) |
Umdwebo Oningiliziwe
