150mm 6 intshi 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

Incazelo emfushane:

Konke lokhu okungenhla kuyizincazelo ezilungile zamakristalu esafire. Ukusebenza okuhle kakhulu kwekristalu yesafire kuyenza isetshenziswe kabanzi emikhakheni yezobuchwepheshe ephezulu. Ngokuthuthuka okusheshayo komkhakha we-LED, isidingo se-sapphire crystal materials siyanda.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinhlelo zokusebenza

Izicelo zama-wafers ama-sapphire angu-6 intshi zifaka:

1. Ukukhiqizwa kwe-LED: i-sapphire wafer ingasetshenziswa njenge-substrate yama-chips e-LED, futhi ubulukhuni bayo kanye ne-thermal conductivity kungathuthukisa ukuzinza nokuphila kwesevisi yama-chips e-LED.

2. Ukwenziwa kwe-laser: Iwafa ye-Sapphire nayo ingasetshenziswa njenge-substrate ye-laser, ukusiza ukuthuthukisa ukusebenza kwe-laser nokwelula impilo yesevisi.

3. Ukukhiqizwa kwama-semiconductor: Amawafa e-Sapphire asetshenziswa kakhulu ekwenzeni izinto zikagesi kanye ne-optoelectronic, okuhlanganisa i-optical synthesis, amaseli elanga, amadivaysi kagesi asebenza kakhulu, njll.

4. Ezinye izinhlelo zokusebenza: Isicwecwana seSapphire singasetshenziswa futhi ukwenza isikrini sokuthinta, amadivaysi okubona, amaseli elanga efilimu emincane neminye imikhiqizo yobuchwepheshe obuphezulu.

Ukucaciswa

Okubalulekile	I-crystal eyodwa ye-Al2O3 ehlanzekile, i-wafer yesafire.
Ubukhulu	150 mm +/- 0.05 mm, 6 amayintshi
Ubukhulu	1300 +/- 25 um
Ukuqondisa	Indiza engu-C (0001) isuka ku-M (1-100) endizeni engu-0.2 +/- 0.05 degree
Umumo oyisicaba oyinhloko	Indiza +/- 1 degree
Ubude obuyisicaba obuyisisekelo	47.5 mm +/- 1 mm
Ukuhlukahluka Kokuqina Okuphelele (TTV)	<20 um
Khothama	<25 um
I-Wap	<25 um
I-Thermal Expansion Coefficient	6.66 x 10-6 / °C ngokuhambisana ne-C eksisi, 5 x 10-6 /°C perpendicular to C eksisi
Amandla e-Dielectric	4.8 x 105 V/cm
I-Dielectric Constant	11.5 (1 MHz) ngokuhambisana ne-C eksisi, 9.3 (1 MHz) ngokuqondana ne-C eksisi
I-Dielectric Loss Tangent (eyaziwa nangokuthi i-dissipation factor)	ngaphansi kuka-1 x 10-4
I-Thermal Conductivity	40 W/(mK) ku-20℃
Ukupholisha	uhlangothi olulodwa olupholishiwe (SSP) noma olupholishelwe ohlangothini olukabili (DSP) i-Ra <0.5 nm (nge-AFM). Uhlangothi olungemuva lwe-SSP wafer lwaluyisizinda esihle ku-Ra = 0.8 - 1.2 um.
Ukudlulisa	88% +/-1 % @460 nm