I-SiC eyodwa eqhutshwayo engu-6 intshi ku-substrate ye-SiC ehlanganisiwe ye-polycrystalline Ububanzi: 150mm Uhlobo lwe-P Uhlobo lwe-N

I-SiC eyodwa edonsayo engu-intshi eziyi-6 ku-substrate ye-SiC ehlanganisiwe ye-polycrystalline Ububanzi 150mm Uhlobo lwe-P Uhlobo lwe-N Isithombe Esifakiwe

Incazelo emfushane:

I-monocrystalline SiC engamasentimitha angu-6 eqhubayo ku-polycrystalline SiC composite substrate imelela isisombululo sezinto ze-silicon carbide (SiC) esisha esenzelwe amadivayisi kagesi anamandla aphezulu, okushisa okuphezulu, kanye nemvamisa ephezulu. Le substrate inesendlalelo esisebenzayo se-SiC esisodwa esiboshwe kwisisekelo se-polycrystalline SiC ngezinqubo ezikhethekile, ezihlanganisa izakhiwo zikagesi eziphakeme ze-monocrystalline SiC nezinzuzo zezindleko ze-polycrystalline SiC.
Uma kuqhathaniswa ne-substrates ze-SiC ezivamile ze-monocrystalline egcwele, i-monocrystalline SiC engamasentimitha angu-6 eqhuba i-polycrystalline SiC composite substrate igcina ukuhamba okuphezulu kwama-electron kanye nokumelana okuphezulu kwamandla kagesi ngenkathi inciphisa kakhulu izindleko zokukhiqiza. Usayizi wayo we-wafer engamasentimitha angu-6 (150 mm) uqinisekisa ukuhambisana nemigqa yokukhiqiza ye-semiconductor ekhona, okwenza kube lula ukukhiqizwa okukhuliswayo. Ngaphezu kwalokho, umklamo we-conductive uvumela ukusetshenziswa okuqondile ekwakhiweni kwamadivayisi kagesi (isb. ama-MOSFET, ama-diode), kususa isidingo sezinqubo ezengeziwe zokusebenzisa i-doping kanye nokwenza lula imisebenzi yokukhiqiza.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Usayizi:	6 intshi
Ububanzi:	150 mm
Ubukhulu:	400-500 μm
Amapharamitha efilimu i-Monocrystalline SiC
Uhlobo lwe-polytype:	4H-SiC noma 6H-SiC
Ukuhlushwa kwe-Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubukhulu:	5-20 μm
Ukumelana Neshidi:	10-1000 Ω/skwele
Ukuhamba kwe-Electron:	800-1200 cm²/Vs
Ukuhamba Kwemigodi:	100-300 cm²/Vs
Amapharamitha Esendlalelo Se-Polycrystalline SiC Buffer
Ubukhulu:	50-300 μm
Ukuqhuba Ukushisa:	150-300 W/m·K
Amapharamitha e-Monocrystalline SiC Substrate
Uhlobo lwe-polytype:	4H-SiC noma 6H-SiC
Ukuhlushwa kwe-Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubukhulu:	300-500 μm
Usayizi Wezinhlamvu:	> 1 mm
Ubulukhuni Bomphezulu:	< 0.3 mm RMS
Izakhiwo Zemishini Nekagesi
Ubulukhuni:	Ama-Moh angu-9-10
Amandla Okucindezela:	3-4 GPa
Amandla Okudonsa:	0.3-0.5 GPa
Amandla Ensimu Yokuhlukaniswa:	> 2 MV/cm
Ukubekezelelana Komthamo Ophelele:	> 10 Mrad
Ukumelana Nomphumela Wesenzakalo Esisodwa:	> 100 MeV·cm²/mg
Ukuqhuba Ukushisa:	150-380 W/m·K
Ibanga Lokushisa Lokusebenza:	-55 kuya ku-600°C

Izici Eziyinhloko

I-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC ehlanganisiwe inikeza ibhalansi ehlukile yesakhiwo kanye nokusebenza kwezinto, okwenza ifaneleke ezindaweni zezimboni ezidinga kakhulu:

1. Ukusebenza Kahle Kwezindleko: Isisekelo se-polycrystalline SiC sinciphisa kakhulu izindleko uma kuqhathaniswa ne-full-monocrystalline SiC, kuyilapho ungqimba olusebenzayo lwe-monocrystalline SiC luqinisekisa ukusebenza kwebanga ledivayisi, okulungele izinhlelo zokusebenza ezibucayi.

2. Izakhiwo Zikagesi Ezingavamile: Isendlalelo se-monocrystalline SiC sibonisa ukuhamba okuphezulu kwenethiwekhi (>500 cm²/V·s) kanye nobuningi obuphansi besici, okusekela ukusebenza kwedivayisi okuvama kakhulu kanye namandla aphezulu.

3. Ukuzinza Kwezinga Lokushisa Eliphezulu: Ukumelana kwe-SiC nokushisa okuphezulu (>600°C) kuqinisekisa ukuthi i-substrate ehlanganisiwe ihlala izinzile ngaphansi kwezimo ezimbi kakhulu, okwenza ifaneleke ezimotweni zikagesi kanye nezinhlelo zokusebenza zezimoto zezimboni.

Usayizi we-Wafer Ojwayelekile ongu-4.6 intshi: Uma kuqhathaniswa ne-substrates yendabuko engu-4 intshi ye-SiC, ifomethi engu-6 intshi ikhulisa isivuno se-chip ngamaphesenti angaphezu kuka-30, okunciphisa izindleko zedivayisi ngayinye.

5. Umklamo Oqhubayo: Izendlalelo zohlobo lwe-N noma uhlobo lwe-P ezifakwe ngaphambili zinciphisa izinyathelo zokufakelwa kwe-ion ekukhiqizweni kwamadivayisi, zithuthukisa ukusebenza kahle kokukhiqiza kanye nokukhiqiza.

6. Ukuphathwa Okuphezulu Kokushisa: Ukushisa kwesisekelo se-polycrystalline SiC (~120 W/m·K) kusondela ku-monocrystalline SiC, ukubhekana ngempumelelo nezinselele zokushabalalisa ukushisa kumadivayisi anamandla amakhulu.

Lezi zici zibeka i-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC njengesixazululo sokuncintisana sezimboni ezifana namandla avuselelekayo, ezokuthutha ngesitimela, kanye nezindiza.

Izicelo Eziyinhloko

I-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC ehlanganisiwe isetshenziswe ngempumelelo emikhakheni eminingana efunwa kakhulu:
1. Ama-Powertrain Ezimoto Zikagesi: Asetshenziswa kuma-SiC MOSFET anama-voltage aphezulu kanye nama-diode ukuthuthukisa ukusebenza kahle kwe-inverter nokwandisa ububanzi bebhethri (isb., amamodeli e-Tesla, e-BYD).

2. Ama-Industrial Motor Drives: Ivumela amamojula wamandla ashintshashintshayo asezingeni lokushisa eliphezulu, anciphisa ukusetshenziswa kwamandla emishinini esindayo kanye nama-wind turbine.

3. Ama-Inverter e-Photovoltaic: Amadivayisi e-SiC athuthukisa ukusebenza kahle kokuguqulwa kwelanga (>99%), kuyilapho i-substrate ehlanganisiwe inciphisa kakhulu izindleko zesistimu.

4. Ukuthuthwa Kwesitimela: Kusetshenziswa kuma-traction converters ezinhlelweni zesitimela ezihamba ngesivinini esikhulu kanye nezinhlelo zesitimela esingaphansi komhlaba, okunikeza ukumelana kwamandla kagesi aphezulu (>1700V) kanye nezinto eziqinile.

5. I-Aerospace: Ilungele izinhlelo zamandla zesathelayithi kanye nezifunda zokulawula injini yezindiza, ezikwazi ukumelana namazinga okushisa aphezulu kanye nemisebe.

Ekwenziweni okusebenzayo, i-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC ehlanganisiwe ihambisana ngokugcwele nezinqubo ezijwayelekile zedivayisi ye-SiC (isb., i-lithography, i-etching), engadingi ukutshalwa kwezimali okwengeziwe.

Izinsizakalo ze-XKH

I-XKH inikeza ukwesekwa okuphelele kwe-SiC engu-6-intshi eqhubayo ye-monocrystalline ku-substrate ye-polycrystalline SiC composite, ehlanganisa i-R&D kuya ekukhiqizweni okukhulu:

1. Ukwenza ngokwezifiso: Ubukhulu besendlalelo se-monocrystalline obulungisekayo (5–100 μm), ukuhlushwa kwe-doping (1e15–1e19 cm⁻³), kanye nokuqondiswa kwekristalu (4H/6H-SiC) ukuze kuhlangatshezwane nezidingo zedivayisi ezahlukahlukene.

2. Ukucubungula i-Wafer: Ukunikezwa ngobuningi kwezingxenye ezincane ezingamasentimitha angu-6 ezinezinsizakalo zokunciphisa ingemuva kanye nokwenza insimbi ukuze kuhlanganiswe i-plug-and-play.

3. Ukuqinisekiswa Kobuchwepheshe: Kufaka phakathi ukuhlaziywa kwe-XRD crystallinity, ukuhlolwa komphumela we-Hall, kanye nokulinganiswa kokumelana nokushisa ukuze kusheshiswe ukufaneleka kwezinto.

4. I-Prototyping Esheshayo: Amasampula angu-2 kuya kwangu-4 intshi (inqubo efanayo) yezikhungo zocwaningo ukuze kusheshiswe imijikelezo yentuthuko.

5. Ukuhlaziywa Nokwenza Kahle Kokwehluleka: Izixazululo zezinga lezinto zokwakha zezinselele zokucubungula (isb., amaphutha ezingqimba ze-epitaxial).

Umgomo wethu ukusungula i-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC composite njengesixazululo esikhethwayo sokusebenza kahle kwezindleko ze-electronics yamandla e-SiC, enikeza ukwesekwa kusukela ekuqaleni kuya ekugcineni kusukela ekukhiqizeni i-prototyping kuya ekukhiqizweni kwevolumu.

Isiphetho

I-SiC engu-6-intshi eqhubayo ye-monocrystalline engaphansi kwe-polycrystalline SiC composite ifinyelela ibhalansi ephumelelayo phakathi kokusebenza kanye nezindleko ngesakhiwo sayo esisha se-mono/polycrystalline hybrid. Njengoba izimoto zikagesi zanda futhi i-Industry 4.0 ithuthuka, le substrate inikeza isisekelo esithembekile sezinto zikagesi zesizukulwane esilandelayo. I-XKH yamukela ukubambisana ukuze kuhlolwe kabanzi amandla obuchwepheshe be-SiC.