6 intshi-8 intshi LN-on-Si Composite Substrate Ukuqina 0.3-50 μm Si/SiC/Sapphire Of Materials

6 intshi-8 intshi LN-on-Si Composite Substrate Ukuqina 0.3-50 μm Si/SiC/Sapphire Wezinto Ezibalulekile Isithombe Esifakiwe

Incazelo emfushane:

I-substrate eyinhlanganisela engu-6 intshi kuya ku-8 intshi ye-LN-on-Si iyinto esebenza kahle kakhulu ehlanganisa amafilimu amancane e-single-crystal lithium niobate (LN) ane-silicon (Si) substrates, enogqinsi olusuka ku-0.3 μm kuya ku-50 μm. Yenzelwe ukwenziwa kwe-semiconductor ethuthukisiwe kanye ne-optoelectronic device. Isebenzisa izindlela ezithuthukisiwe zokuhlanganisa noma zokukhula kwe-epitaxial, le substrate iqinisekisa ikhwalithi ephezulu yekristalu yefilimu elincanyana ye-LN kuyilapho isebenzisa usayizi omkhulu we-wafer (6-inch kuya ku-8-intshi) we-silicon substrate ukuze kuthuthukiswe ukusebenza kahle kokukhiqiza kanye nempumelelo yezindleko.
Uma kuqhathaniswa nezinto ezivamile ze-LN eziyinqwaba, i-substrate eyinhlanganisela engu-6-intshi kuya ku-8-inch LN-on-Si inikeza ukufanisa okushisayo okuphezulu nokuzinza komshini, okuyenza ifanelekele ukucubungula ngezinga elikhulu le-wafer. Ukwengeza, ezinye izinto eziyisisekelo ezifana ne-SiC noma isafire zingakhethwa ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza, okuhlanganisa amadivaysi e-RF anemvamisa ephezulu, ama-photonics ahlanganisiwe, nezinzwa ze-MEMS.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imingcele yezobuchwepheshe

0.3-50μm LN/LT kuma-Insulators
Isendlalelo esiphezulu
Ububanzi	6-8 intshi
Ukuqondisa	X, Z, Y-42 njll.
Izinto zokwakha	LT, LN
Ubukhulu	0.3-50μm
I-Substrate (eyenziwe ngokwezifiso)
Okubalulekile	Si, SiC, Sapphire, Spinel, Quartz

Izici Eziyinhloko

I-substrate eyinhlanganisela engama-intshi angu-6 kuya kwangu-8 intshi ye-LN-on-Si ihlukaniswa ngezinto zayo ezibonakalayo ezihlukile namapharamitha aguqulekayo, okuvumela ukusetshenziswa okubanzi kuzimboni ze-semiconductor kanye ne-optoelectronic:

1.Ukuvumelana kwe-Wafer Okukhulu: Usayizi we-wafer ongu-6 intshi kuya ku-8 intshi uqinisekisa ukuhlanganiswa okungenamthungo nemigqa ekhona yokwakhiwa kwe-semiconductor (isb, izinqubo ze-CMOS), ukunciphisa izindleko zokukhiqiza nokwenza ukukhiqizwa ngobuningi.

I-2.Ikhwalithi ephezulu ye-Crystalline: Amasu athuthukisiwe we-epitaxial noma ama-bonding aqinisekisa ukuminyana kwesici esiphansi kufilimu encane ye-LN, okwenza kube ekahle kuma-modulator optical asebenza kahle kakhulu, izihlungi ze-surface acoustic wave (SAW), namanye amadivaysi anembayo.

3.Ukuqina Okulungisekayo (0.3–50 μm): Izendlalelo ze-Ultrathin LN (<1 μm) zifanele ama-chips e-photonic ahlanganisiwe, kuyilapho izendlalelo eziwugqinsi (10–50 μm) zisekela amadivayisi e-RF anamandla amakhulu noma izinzwa ze-piezoelectric.

Izinketho ze-4.Multiple Substrate: Ngaphezu kwe-Si, i-SiC (i-high-thermal conductivity) noma i-sapphire (i-insulation ephezulu) ingakhethwa njengezinto eziyisisekelo ukuze kuhlangatshezwane nezidingo ze-high-frequency, izinga lokushisa eliphezulu, noma izicelo zamandla aphezulu.

I-5.I-Thermal and Mechanical Stability: I-substrate ye-silicon inikeza ukusekelwa okuqinile kwemishini, ukunciphisa ukulwa noma ukuqhekeka ngesikhathi sokucubungula nokuthuthukisa isivuno sedivayisi.

Lezi zibaluli zibeka i-substrate eyinhlanganisela engu-6-intshi ku-8-inch LN-on-Si njengento ekhethwayo yobuchwepheshe obusezingeni eliphezulu obufana nokuxhumana kwe-5G, i-LiDAR, ne-quantum optics.

Izicelo Eziyinhloko

I-substrate eyinhlanganisela engu-6 intshi kuya ku-8 intshi ye-LN-on-Si yamukelwa kabanzi ezimbonini zobuchwepheshe obuphezulu ngenxa yezakhiwo zayo ezihlukile ze-electro-optic, piezoelectric, kanye ne-acoustic:

I-1.Optical Communications kanye Nezithombe Ezihlanganisiwe: Inika amandla amamodulator we-electro-optic anesivinini esiphezulu, ama-waveguides, namasekhethi ahlanganisiwe ezithombe (PICs), ukubhekana nezidingo zomkhawulokudonsa wezikhungo zedatha namanethiwekhi e-fiber-optic.

I-2.5G/6G RF Amadivayisi: I-piezoelectric coefficient ephezulu ye-LN iyenza ilungele izihlungi ze-surface acoustic wave (SAW) kanye ne-bulk acoustic wave (BAW), ethuthukisa ukucutshungulwa kwesignali eziteshini eziyisisekelo ze-5G namadivayisi eselula.

I-3.MEMS kanye Nezinzwa: Umphumela we-piezoelectric we-LN-on-Si usiza ama-accelerometers azwela kakhulu, ama-biosensors, nama-transducer ama-ultrasonic wezinhlelo zokusebenza zezokwelapha nezimboni.

4.I-Quantum Technologies: Njengezinto ezibonakalayo ezingaqondile, amafilimu amancane e-LN asetshenziswa emithonjeni yokukhanya ye-quantum (isb., amapheya e-photon ahlanganisiwe) kanye nama-chips e-quantum ahlanganisiwe.

I-5.Ama-Lasers kanye ne-Nonlinear Optics: Izendlalelo ze-Ultrathin LN zinika amandla isizukulwane sesibili se-harmonic (SHG) kanye namadivayisi optical parametric oscillation (OPO) okucubungula i-laser nokuhlaziywa kwe-spectroscopic.

I-substrate eyinhlanganisela yama-intshi angu-6 kuya kwangu-8 intshi ye-LN-on-Si ivumela lawa madivayisi ukuthi akhiqizwe ngendwangu ye-wafer enkulu, enciphisa kakhulu izindleko zokukhiqiza.

Ukwenza ngokwezifiso kanye Nezinsizakalo

Sihlinzeka ngosekelo olubanzi lobuchwepheshe kanye nezinsizakalo zokwenza ngokwezifiso ze-substrate eyinhlanganisela engu-6 intshi ukuya ku-8-inch LN-on-Si ukuze kuhlangatshezwane ne-R&D eyahlukahlukene kanye nezidingo zokukhiqiza:

1.Ukwenziwa Ngokwezifiso: Ugqinsi lwefilimu ye-LN (0.3–50 μm), umumo wekristalu (X-cut/Y-cut), kanye nokokusebenza kwe-substrate (Si/SiC/sapphire) kungenziwa ngendlela efanele ukuze kuthuthukiswe ukusebenza kwedivayisi.

2.I-Wafer-Level Processing: Ukuhlinzekwa ngobuningi kwama-wafers angu-6-intshi nama-intshi angu-8-intshi, okuhlanganisa namasevisi angemuva afana nokudayela, ukupholisha, nokunamathiswa, ukuqinisekisa ukuthi ama-substrates alungele ukuhlanganiswa kwedivayisi.

3.Ukubonisana Kobuchwepheshe Nokuhlola: Ukwenziwa kwezinhlamvu zento ebalulekile (isb, i-XRD, i-AFM), ukuhlola ukusebenza kwe-electro-optic, nokusekelwa kokulingisa idivayisi ukuze kusheshiswe ukuqinisekiswa kwedizayini.

Umgomo wethu uwukusungula i-substrate eyinhlanganisela engama-intshi angu-6 kuya kwangu-8 intshi ye-LN-on-Si njengesixazululo esibalulekile sezinhlelo zokusebenza ze-optoelectronic kanye ne-semiconductor, enikeza ukusekelwa kokuphela ukusuka ku-R&D kuya ekukhiqizeni ngobuningi.

Isiphetho

I-substrate eyinhlanganisela engama-intshi angu-6 kuya kwangu-8 intshi ye-LN-on-Si, enosayizi wayo omkhulu we-wafer, ikhwalithi ephezulu yezinto ezibonakalayo, nokuguquguquka, ithuthukisa intuthuko kwezokuxhumana okubonakalayo, i-5G RF, kanye nobuchwepheshe be-quantum. Kungakhathaliseki ukuthi okokukhiqiza umthamo ophezulu noma izixazululo ezenziwe ngokwezifiso, siletha ama-substrates athembekile kanye nezinsizakalo ezihambisanayo ukuze sinikeze amandla ukusungula okusha kwezobuchwepheshe.